BE510303A - - Google Patents

Info

Publication number
BE510303A
BE510303A BE510303DA BE510303A BE 510303 A BE510303 A BE 510303A BE 510303D A BE510303D A BE 510303DA BE 510303 A BE510303 A BE 510303A
Authority
BE
Belgium
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of BE510303A publication Critical patent/BE510303A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B19/00—Other methods of shaping glass
    • C03B19/02—Other methods of shaping glass by casting molten glass, e.g. injection moulding
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
    • C03B5/00—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture
    • C03B5/06—Melting in furnaces; Furnaces so far as specially adapted for glass manufacture in pot furnaces
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
    • C22B5/00—General methods of reducing to metals
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B19/00—Liquid-phase epitaxial-layer growth
    • C30B19/10—Controlling or regulating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/925—Fluid growth doping control, e.g. delta doping

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
BE510303D 1951-11-16 BE510303A (US06649357-20031118-C00005.png)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US256791A US2739088A (en) 1951-11-16 1951-11-16 Process for controlling solute segregation by zone-melting

Publications (1)

Publication Number Publication Date
BE510303A true BE510303A (US06649357-20031118-C00005.png)

Family

ID=22973593

Family Applications (1)

Application Number Title Priority Date Filing Date
BE510303D BE510303A (US06649357-20031118-C00005.png) 1951-11-16

Country Status (7)

Country Link
US (1) US2739088A (US06649357-20031118-C00005.png)
BE (1) BE510303A (US06649357-20031118-C00005.png)
CH (1) CH323989A (US06649357-20031118-C00005.png)
DE (2) DE1135671B (US06649357-20031118-C00005.png)
FR (1) FR1065523A (US06649357-20031118-C00005.png)
GB (2) GB769673A (US06649357-20031118-C00005.png)
NL (1) NL168491B (US06649357-20031118-C00005.png)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
US2822309A (en) * 1954-03-12 1958-02-04 Gen Electric P-n junction device and method of making the same by local fusion
US2825549A (en) * 1954-12-28 1958-03-04 Itt Mold for semi-conductor ingots
US2836521A (en) * 1953-09-04 1958-05-27 Westinghouse Electric Corp Hook collector and method of producing same
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
US2849343A (en) * 1954-04-01 1958-08-26 Philips Corp Method of manufacturing semi-conductive bodies having adjoining zones of different conductivity properties
DE1056840B (de) * 1953-02-14 1959-05-06 Siemens Ag Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren
US2907715A (en) * 1955-04-04 1959-10-06 Texas Instruments Inc Method for producing single-crystal semiconductor material
DE1175447B (de) * 1954-01-29 1964-08-06 Licentia Gmbh Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen
DE1178611B (de) * 1954-02-20 1964-09-24 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
DE1184971B (de) * 1954-06-22 1965-01-07 Siemens Ag Verfahren zum tiegellosen Schmelzen von stabfoermigen Koerpern aus reinstem Halbleitermaterial
DE1188042B (de) * 1954-01-29 1965-03-04 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers
DE1253235B (de) * 1954-05-25 1967-11-02 Siemens Ag Verfahren zum Herstellen stabfoermiger Halbleiterkristalle
DE1301862B (de) * 1953-10-21 1969-08-28 Allg Elek Zitaets Ges Aeg Tele Verfahren zum Herstellen eines Drifttransistors

Families Citing this family (118)

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US3125532A (en) * 1964-03-17 Method of doping semiconductor
NL180311B (nl) * 1952-08-01 Ciba Geigy Werkwijze voor het bereiden van n-halogeenacylanilinoalkaancarbonzuuresters alsmede werkwijze voor het bereiden van microbicide preparaten ter bestrijding van fytopathogene schimmels en bacterien op basis van dergelijke esters.
US2798018A (en) * 1952-09-29 1957-07-02 Carnegie Inst Of Technology Method of removing gaseous segregation from metals
US3060123A (en) * 1952-12-17 1962-10-23 Bell Telephone Labor Inc Method of processing semiconductive materials
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US3234009A (en) * 1953-02-14 1966-02-08 Siemens Ag Method and device for the successive zone melting and resolidifying of extremely pure substances
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
US2933384A (en) * 1953-09-19 1960-04-19 Siemens Ag Method of melting compounds without decomposition
US2861017A (en) * 1953-09-30 1958-11-18 Honeywell Regulator Co Method of preparing semi-conductor devices
US2845371A (en) * 1953-11-27 1958-07-29 Raytheon Mfg Co Process of producing junctions in semiconductors
US2826666A (en) * 1954-02-15 1958-03-11 Tung Sol Electric Inc Improvement in apparatus for growing single crystals
US3010857A (en) * 1954-03-01 1961-11-28 Rca Corp Semi-conductor devices and methods of making same
US2964396A (en) * 1954-05-24 1960-12-13 Siemens Ag Producing semiconductor substances of highest purity
GB797950A (en) * 1954-06-10 1958-07-09 Rca Corp Semi-conductor alloys
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
US2835612A (en) * 1954-08-23 1958-05-20 Motorola Inc Semiconductor purification process
DE1029803B (de) * 1954-09-18 1958-05-14 Siemens Ag Verfahren zur Herstellung einer Verbindung oder einer Legierung in kristalliner Form durch Zusammen-schmelzen der Komponenten in einem abgeschlossenen System
US2892739A (en) * 1954-10-01 1959-06-30 Honeywell Regulator Co Crystal growing procedure
BE542380A (US06649357-20031118-C00005.png) * 1954-10-29
GB831305A (en) * 1955-01-11 1960-03-30 Ass Elect Ind Improvements relating to the refining of heavy metals by zone melting
US2999776A (en) * 1955-01-13 1961-09-12 Siemens Ag Method of producing differentiated doping zones in semiconductor crystals
US2950219A (en) * 1955-02-23 1960-08-23 Rauland Corp Method of manufacturing semiconductor crystals
NL107344C (US06649357-20031118-C00005.png) * 1955-03-23
US2822308A (en) * 1955-03-29 1958-02-04 Gen Electric Semiconductor p-n junction units and method of making the same
US2841509A (en) * 1955-04-27 1958-07-01 Rca Corp Method of doping semi-conductive material
US2817608A (en) * 1955-05-02 1957-12-24 Rca Corp Melt-quench method of making transistor devices
US2931743A (en) * 1955-05-02 1960-04-05 Philco Corp Method of fusing metal body to another body
DE1051013B (de) * 1955-06-17 1959-02-19 Western Electric Company, Incorporated, New York, N. Y. (V. St. A.) Verfahren zum Freischwebendhalten von Flüssigkeiten, insbesondere von Schmelzen
US2824030A (en) * 1955-07-21 1958-02-18 Canadian Patents Dev Method of preparing semiconductive materials
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US2855334A (en) * 1955-08-17 1958-10-07 Sprague Electric Co Method of preparing semiconducting crystals having symmetrical junctions
US2944975A (en) * 1955-09-14 1960-07-12 Siemens Ag Method for producing and re-melting compounds having high vapor pressure at the meltig point
US2829994A (en) * 1955-10-06 1958-04-08 Hughes Aircraft Co Method for preparing silicon-germanium alloys
US3046164A (en) * 1955-10-18 1962-07-24 Honeywell Regulator Co Metal purification procedures
US2835614A (en) * 1955-11-30 1958-05-20 Raulaud Corp Method of manufacturing crystalline material
US2809905A (en) * 1955-12-20 1957-10-15 Nat Res Dev Melting and refining metals
US2809165A (en) * 1956-03-15 1957-10-08 Rca Corp Semi-conductor materials
US2852420A (en) * 1956-06-28 1958-09-16 Rauland Corp Method of manufacturing semiconductor crystals
NL98843C (US06649357-20031118-C00005.png) * 1956-07-02
US2979386A (en) * 1956-08-02 1961-04-11 Shockley William Crystal growing apparatus
US2977256A (en) * 1956-08-16 1961-03-28 Gen Electric Semiconductor devices and methods of making same
US2912321A (en) * 1956-09-04 1959-11-10 Helen E Brennan Continuous casting and refining of material
NL107669C (US06649357-20031118-C00005.png) * 1956-10-01
NL104388C (US06649357-20031118-C00005.png) * 1956-11-28
US2990439A (en) * 1956-12-18 1961-06-27 Gen Electric Co Ltd Thermocouples
US2932562A (en) * 1956-12-27 1960-04-12 Bell Telephone Labor Inc Zone-melting with joule heat
NL236919A (US06649357-20031118-C00005.png) * 1957-03-07 1900-01-01
US2962363A (en) * 1957-07-09 1960-11-29 Pacific Semiconductors Inc Crystal pulling apparatus and method
US2980560A (en) * 1957-07-29 1961-04-18 Rca Corp Methods of making semiconductor devices
US2990257A (en) * 1957-10-28 1961-06-27 Fisher Scientific Co Zone refiner
US2992903A (en) * 1957-10-30 1961-07-18 Imber Oscar Apparatus for growing thin crystals
DE1092576B (de) * 1957-11-15 1960-11-10 Siemens Ag Stromzufuehrung fuer die bewegliche Heizspule einer tiegelfreien Zonenziehvorrichtung im Innern eines Gefaesses
NL235481A (US06649357-20031118-C00005.png) * 1958-02-19
NL130366C (US06649357-20031118-C00005.png) * 1958-04-23
DE1164680B (de) * 1958-05-21 1964-03-05 Siemens Ag Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit
US2974072A (en) * 1958-06-27 1961-03-07 Ibm Semiconductor connection fabrication
US2967095A (en) * 1958-07-25 1961-01-03 Gen Electric Method and apparatus for forming single crystal in cylindrical form
US3043725A (en) * 1958-11-06 1962-07-10 Texas Instruments Inc Photo transistor
US3121630A (en) * 1958-11-12 1964-02-18 Heraeus Gmbh W C Method and apparatus for sintering premolded objects
US2996374A (en) * 1958-11-13 1961-08-15 Texas Instruments Inc Method of zone refining for impurities having segregation coefficients greater than unity
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DE1164681B (de) * 1958-12-24 1964-03-05 Siemens Ag Verfahren zur Herstellung eines gleichmaessig dotierten Stabes aus Halbleitermaterial durch tiegelfreies Zonenschmelzen
NL98968C (US06649357-20031118-C00005.png) * 1959-02-17
US3031275A (en) * 1959-02-20 1962-04-24 Shockley William Process for growing single crystals
DE1130414B (de) * 1959-04-10 1962-05-30 Elektronik M B H Verfahren und Vorrichtung zum Ziehen von Einkristallen
DE1227874B (de) * 1959-04-10 1966-11-03 Itt Ind Ges Mit Beschraenkter Verfahren zum Herstellen von n-dotierten Siliciumeinkristallen
US3154381A (en) * 1959-04-20 1964-10-27 Haskiel R Shell Progressive melting and crystallization of synthetic mica
US3036898A (en) * 1959-04-30 1962-05-29 Ibm Semiconductor zone refining and crystal growth
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US3141849A (en) * 1960-07-04 1964-07-21 Wacker Chemie Gmbh Process for doping materials
DE1205955B (de) * 1960-11-30 1965-12-02 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines mit Phosphor dotierten Siliciumstabes im Vakuum
DE1156384B (de) * 1960-12-23 1963-10-31 Wacker Chemie Gmbh Verfahren zum Dotieren von hochreinen Stoffen
DE1227424B (de) * 1961-03-01 1966-10-27 Philips Nv Verfahren und Vorrichtung zum Zonenschmelzen eines aus einer Metallverbindung bestehenden stabfoermigen Koerpers
NL276635A (US06649357-20031118-C00005.png) * 1961-03-31
DE1419656B2 (de) * 1961-05-16 1972-04-20 Siemens AG, 1000 Berlin u 8000 München Verfahren zum dotieren eines stabfoermigen koerpers aus halbleitermaterial, insbesondere aus silicium, mit bor
US3162526A (en) * 1961-10-26 1964-12-22 Grace W R & Co Method of doping semiconductor materials
NL285816A (US06649357-20031118-C00005.png) * 1962-01-26
US3254955A (en) * 1962-08-28 1966-06-07 George R Bird Method of preparing a tantalum carbide crystal
US3245761A (en) * 1962-10-11 1966-04-12 Norton Co Apparatus for making magnesium oxide crystals
US3301660A (en) * 1963-10-22 1967-01-31 Dojindo & Co Ltd Metal purification process
US3170882A (en) * 1963-11-04 1965-02-23 Merck & Co Inc Process for making semiconductors of predetermined resistivities
DE1277828B (de) * 1963-11-12 1968-09-19 Fuji Electric Co Ltd Verfahren zum Entfernen von unerwuenschten Verunreinigungen aus einem Halbleiterkoerpr
DE1276331B (de) * 1963-11-21 1968-08-29 Gen Electric Verfahren zur Herstellung eines homogenen halbleitenden Einkristalls
US3249425A (en) * 1964-08-17 1966-05-03 Joseph R Mares Process for freeze-refining a metal
FR1420509A (fr) * 1964-10-27 1965-12-10 Commissariat Energie Atomique Procédé de fabrication d'alliage germanium-silicium
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JP3186096B2 (ja) * 1990-06-14 2001-07-11 アジレント・テクノロジーズ・インク 感光素子アレイの製造方法
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JP6806199B1 (ja) * 2019-08-08 2021-01-06 Tdk株式会社 磁気抵抗効果素子およびホイスラー合金

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US2631356A (en) * 1953-03-17 Method of making p-n junctions
DE375823C (de) * 1921-07-14 1923-05-18 Patra Patent Treuhand Verfahren und Vorrichtung zur Umwandlung der Kristallstruktur von gezogenen Draehtenaus hoechstschmelzenden Metallen, z. B. Wolfram
US1826355A (en) * 1923-01-12 1931-10-06 Lincoln Electric Co Arc-welding
US1738307A (en) * 1927-04-11 1929-12-03 Bell Telephone Labor Inc Metallic element
US2125172A (en) * 1932-07-29 1938-07-26 Union Carbide & Carbon Corp Process of treating the defective surface metal of billets or the like
US2567970A (en) * 1947-12-24 1951-09-18 Bell Telephone Labor Inc Semiconductor comprising silicon and method of making it
US2576267A (en) * 1948-10-27 1951-11-27 Bell Telephone Labor Inc Preparation of germanium rectifier material

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1056840B (de) * 1953-02-14 1959-05-06 Siemens Ag Verfahren zum Verteilen von Fremdstoffkomponenten in Halbleiterstaeben durch ein tiegelloses Zonenschmelzverfahren
US2836520A (en) * 1953-08-17 1958-05-27 Westinghouse Electric Corp Method of making junction transistors
US2836521A (en) * 1953-09-04 1958-05-27 Westinghouse Electric Corp Hook collector and method of producing same
DE1301862B (de) * 1953-10-21 1969-08-28 Allg Elek Zitaets Ges Aeg Tele Verfahren zum Herstellen eines Drifttransistors
US2792317A (en) * 1954-01-28 1957-05-14 Westinghouse Electric Corp Method of producing multiple p-n junctions
DE1175447B (de) * 1954-01-29 1964-08-06 Licentia Gmbh Verfahren zur Herstellung von Halbleiter-kristallen durch tiegelfreies Zonenschmelzen
DE1188042B (de) * 1954-01-29 1965-03-04 Siemens Ag Vorrichtung zum tiegellosen Zonenschmelzen eines stabfoermigen kristallinen Halbleiterkoerpers
DE1178611B (de) * 1954-02-20 1964-09-24 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen
US2822309A (en) * 1954-03-12 1958-02-04 Gen Electric P-n junction device and method of making the same by local fusion
US2849343A (en) * 1954-04-01 1958-08-26 Philips Corp Method of manufacturing semi-conductive bodies having adjoining zones of different conductivity properties
DE1253235B (de) * 1954-05-25 1967-11-02 Siemens Ag Verfahren zum Herstellen stabfoermiger Halbleiterkristalle
DE1184971B (de) * 1954-06-22 1965-01-07 Siemens Ag Verfahren zum tiegellosen Schmelzen von stabfoermigen Koerpern aus reinstem Halbleitermaterial
US2825549A (en) * 1954-12-28 1958-03-04 Itt Mold for semi-conductor ingots
US2907715A (en) * 1955-04-04 1959-10-06 Texas Instruments Inc Method for producing single-crystal semiconductor material

Also Published As

Publication number Publication date
DE1032555B (de) 1958-06-19
FR1065523A (fr) 1954-05-26
DE1135671B (de) 1962-08-30
GB769674A (en) 1957-03-13
US2739088A (en) 1956-03-20
GB769673A (en) 1957-03-13
CH323989A (de) 1957-08-31
NL168491B (US06649357-20031118-C00005.png)

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