BE1026164A1 - Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist - Google Patents

Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist Download PDF

Info

Publication number
BE1026164A1
BE1026164A1 BE20195233A BE201905233A BE1026164A1 BE 1026164 A1 BE1026164 A1 BE 1026164A1 BE 20195233 A BE20195233 A BE 20195233A BE 201905233 A BE201905233 A BE 201905233A BE 1026164 A1 BE1026164 A1 BE 1026164A1
Authority
BE
Belgium
Prior art keywords
salt
integer
carbon atoms
different
producing
Prior art date
Application number
BE20195233A
Other languages
English (en)
Other versions
BE1026164B1 (fr
Inventor
Yukako Anryu
Koji Ichikawa
Original Assignee
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Chemical Co filed Critical Sumitomo Chemical Co
Publication of BE1026164A1 publication Critical patent/BE1026164A1/fr
Application granted granted Critical
Publication of BE1026164B1 publication Critical patent/BE1026164B1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C07C381/12—Sulfonium compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/01—Sulfonic acids
    • C07C309/02—Sulfonic acids having sulfo groups bound to acyclic carbon atoms
    • C07C309/03—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton
    • C07C309/06—Sulfonic acids having sulfo groups bound to acyclic carbon atoms of an acyclic saturated carbon skeleton containing halogen atoms, or nitro or nitroso groups bound to the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D307/00—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom
    • C07D307/02—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings
    • C07D307/26—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member
    • C07D307/30—Heterocyclic compounds containing five-membered rings having one oxygen atom as the only ring hetero atom not condensed with other rings having one double bond between ring members or between a ring member and a non-ring member with hetero atoms or with carbon atoms having three bonds to hetero atoms with at the most one bond to halogen, e.g. ester or nitrile radicals, directly attached to ring carbon atoms
    • C07D307/32—Oxygen atoms
    • C07D307/33—Oxygen atoms in position 2, the oxygen atom being in its keto or unsubstituted enol form
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D317/00—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D317/08—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3
    • C07D317/72—Heterocyclic compounds containing five-membered rings having two oxygen atoms as the only ring hetero atoms having the hetero atoms in positions 1 and 3 spiro-condensed with carbocyclic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D321/00—Heterocyclic compounds containing rings having two oxygen atoms as the only ring hetero atoms, not provided for by groups C07D317/00 - C07D319/00
    • C07D321/02—Seven-membered rings
    • C07D321/10—Seven-membered rings condensed with carbocyclic rings or ring systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D327/00—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
    • C07D327/02—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms one oxygen atom and one sulfur atom
    • C07D327/04—Five-membered rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D327/00—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
    • C07D327/02—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms one oxygen atom and one sulfur atom
    • C07D327/06—Six-membered rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D327/00—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms
    • C07D327/02—Heterocyclic compounds containing rings having oxygen and sulfur atoms as the only ring hetero atoms one oxygen atom and one sulfur atom
    • C07D327/06—Six-membered rings
    • C07D327/08—[b,e]-condensed with two six-membered carbocyclic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D335/00—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom
    • C07D335/02—Heterocyclic compounds containing six-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F212/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an aromatic carbocyclic ring
    • C08F212/02—Monomers containing only one unsaturated aliphatic radical
    • C08F212/04—Monomers containing only one unsaturated aliphatic radical containing one ring
    • C08F212/14—Monomers containing only one unsaturated aliphatic radical containing one ring substituted by heteroatoms or groups containing heteroatoms
    • C08F212/22—Oxygen
    • C08F212/24—Phenols or alcohols
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F220/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical or a salt, anhydride ester, amide, imide or nitrile thereof
    • C08F220/02—Monocarboxylic acids having less than ten carbon atoms; Derivatives thereof
    • C08F220/10—Esters
    • C08F220/12—Esters of monohydric alcohols or phenols
    • C08F220/16—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms
    • C08F220/18—Esters of monohydric alcohols or phenols of phenols or of alcohols containing two or more carbon atoms with acrylic or methacrylic acids
    • C08F220/1808—C8-(meth)acrylate, e.g. isooctyl (meth)acrylate or 2-ethylhexyl (meth)acrylate
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
    • C08L33/04—Homopolymers or copolymers of esters
    • C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Emergency Medicine (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

La présente invention peut fournir un sel et une composition de résist, capable de produire un motif de résist avec une inégalité des bords de trait (IBT) satisfaisante. Un sel représenté par la formule (I) telle que représentée dans la revendication 1 ; (C6H2R1R2(R6)m6)(C6H2R3R4(R7)m7)(C6H3(R5)m5(R8)m8)S+ Al- où dans la formule (I), R1, R2, R3, R4 et R5 représentent chacun indépendamment un atome d'halogène ou un groupe perfluoroalkyle ayant 1 à 6 atomes de carbone, R6, R7 et R8 représentent chacun indépendamment un atome d'halogène, un groupe hydroxy, un groupe alkyle fluoré ayant 1 à 6 atomes de carbones ou un groupe alkyle ayant 1 à 12 atomes de carbone, et –CH2- inclus dans le groupe alkyle peut être remplacé par -O- ou -CO-, m5 représente un entier de 1 à 5, et quand m5 est 2 ou plus, une pluralité de R5 peuvent être identiques ou différents, m6 représente un entier de 0 à 3, et quand m6 est 2 ou plus, une pluralité de R6 peuvent être identiques ou différents, m7 représente un entier de 0 à 3, et quand m7 est 2 ou plus, une pluralité de R7 peuvent être identiques ou différents, m8 représente un entier de 0 à 4, et quand m8 est 2 ou plus, une pluralité de R8 peuvent être identiques ou différents, dans lesquels 1 ≤ m5 + m8 ≤ 5 , et AI- représente un anion organique.
BE20195233A 2018-04-12 2019-04-10 Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist BE1026164B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018077035 2018-04-12

Publications (2)

Publication Number Publication Date
BE1026164A1 true BE1026164A1 (fr) 2019-10-22
BE1026164B1 BE1026164B1 (fr) 2020-04-06

Family

ID=66323598

Family Applications (1)

Application Number Title Priority Date Filing Date
BE20195233A BE1026164B1 (fr) 2018-04-12 2019-04-10 Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist

Country Status (5)

Country Link
US (1) US11820735B2 (fr)
JP (2) JP7389562B2 (fr)
KR (1) KR20190119534A (fr)
BE (1) BE1026164B1 (fr)
TW (1) TWI811333B (fr)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7186592B2 (ja) * 2018-12-04 2022-12-09 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、及び化合物
JP7489818B2 (ja) 2019-04-25 2024-05-24 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP2021123580A (ja) * 2020-02-06 2021-08-30 住友化学株式会社 カルボン酸塩、カルボン酸発生剤、レジスト組成物及びレジストパターンの製造方法
JP7433275B2 (ja) * 2021-06-25 2024-02-19 東京応化工業株式会社 レジスト組成物及びレジストパターン形成方法

Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
US3849137A (en) 1971-10-12 1974-11-19 Basf Ag Lithographic printing plates and photoresists comprising a photosensitive polymer
JPS55164824A (en) 1979-06-05 1980-12-22 Basf Ag Positiveeprocessing layerrtype transfer print material
EP0126712A1 (fr) 1983-05-18 1984-11-28 Ciba-Geigy Ag Composition durcissable et son utilisation
JPS6269263A (ja) 1985-09-24 1987-03-30 Toshiba Corp 感光性組成物
JPS62153853A (ja) 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS6326653A (ja) 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JPS63146029A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63146038A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63163452A (ja) 1986-12-17 1988-07-06 チバ−ガイギー　アクチェンゲゼルシャフト 画像形成方法
DE3914407A1 (de) 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JP2000122294A (ja) 1998-08-10 2000-04-28 Toshiba Corp 感光性組成物及びパタ―ン形成方法
JP2010061117A (ja) 2008-08-07 2010-03-18 Sumitomo Chemical Co Ltd 化学増幅型ポジ型レジスト組成物
JP2010204634A (ja) 2008-12-11 2010-09-16 Sumitomo Chemical Co Ltd フォトレジスト組成物
JP2010204646A (ja) 2009-02-06 2010-09-16 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物及びパターン形成方法
JP2011039502A (ja) 2009-07-14 2011-02-24 Sumitomo Chemical Co Ltd レジスト組成物
JP2011116747A (ja) 2009-10-27 2011-06-16 Sumitomo Chemical Co Ltd 固体状のアンモニウム塩化合物の製造方法
JP2011191745A (ja) 2010-02-16 2011-09-29 Sumitomo Chemical Co Ltd レジスト組成物
JP2012006908A (ja) 2010-01-14 2012-01-12 Sumitomo Chemical Co Ltd 塩、フォトレジスト組成物及びレジストパターンの製造方法
JP2012012577A (ja) 2010-06-01 2012-01-19 Shin-Etsu Chemical Co Ltd 重合性モノマー、高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法
JP2012041274A (ja) 2010-08-12 2012-03-01 Idemitsu Kosan Co Ltd ホモアダマンタン誘導体、その製造方法及びフォトレジスト組成物
JP2012072109A (ja) 2010-02-16 2012-04-12 Sumitomo Chemical Co Ltd 塩及び酸発生剤の製造方法
WO2012050015A1 (fr) 2010-10-13 2012-04-19 セントラル硝子株式会社 Sulfonate polymérisable à teneur en fluor, résine de sulfonate à teneur en fluor, composition de réserve et procédé de formation de motif à l'aide de la composition
JP2012229206A (ja) 2011-04-13 2012-11-22 Sumitomo Chemical Co Ltd 塩、レジスト組成物及びレジストパターンの製造方法
JP2015147926A (ja) 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2016079235A (ja) 2014-10-14 2016-05-16 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP2017015777A (ja) 2015-06-26 2017-01-19 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、光反応性クエンチャー及び高分子化合物

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4857437A (en) 1986-12-17 1989-08-15 Ciba-Geigy Corporation Process for the formation of an image
US5260410A (en) 1989-04-29 1993-11-09 Reinhold Schwalm Radiation-sensitive polymer having acid labile groups and onium salt groups
US6200728B1 (en) * 1999-02-20 2001-03-13 Shipley Company, L.L.C. Photoresist compositions comprising blends of photoacid generators
US6664022B1 (en) 2000-08-25 2003-12-16 Shipley Company, L.L.C. Photoacid generators and photoresists comprising same
JP3841400B2 (ja) * 2002-02-26 2006-11-01 富士写真フイルム株式会社 ポジ型レジスト組成物
US7157208B2 (en) * 2004-02-20 2007-01-02 Fuji Photo Film Co., Ltd. Positive resist composition and pattern forming method using the same
JP5020764B2 (ja) * 2007-09-28 2012-09-05 富士フイルム株式会社 スルホニウム塩化合物の製造方法
JP5314995B2 (ja) * 2008-07-17 2013-10-16 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法、化合物、酸発生剤
JP5537962B2 (ja) * 2009-01-16 2014-07-02 富士フイルム株式会社 感活性光線性又は感放射線性樹脂組成物及びこれを用いたパターン形成方法
TWI530478B (zh) * 2010-02-18 2016-04-21 住友化學股份有限公司 鹽及包含該鹽之光阻組成物
TWI579262B (zh) * 2011-06-09 2017-04-21 住友化學股份有限公司 鹽、光阻組成物及光阻圖案的製造方法
JP6011096B2 (ja) * 2011-07-26 2016-10-19 住友化学株式会社 塩及びレジスト組成物
JP5742563B2 (ja) * 2011-08-02 2015-07-01 Jsr株式会社 フォトレジスト組成物及びレジストパターン形成方法
JP5678864B2 (ja) * 2011-10-26 2015-03-04 信越化学工業株式会社 ＡｒＦ液浸露光用化学増幅ポジ型レジスト材料及びパターン形成方法
JP5856991B2 (ja) 2012-05-21 2016-02-10 富士フイルム株式会社 化学増幅型レジスト組成物、ネガ型化学増幅型レジスト組成物、それを用いたレジスト膜、レジスト塗布マスクブランクス、フォトマスクの製造方法及びパターン形成方法、並びに、電子デバイスの製造方法
BR112015006578A2 (pt) 2012-09-26 2019-12-17 Fujifilm Corp precursor da chapa de impressão litográfica e método de fabricação da chapa
JP6442370B2 (ja) * 2015-06-26 2018-12-19 サンアプロ株式会社 スルホニウム塩および光酸発生剤
JP6768370B2 (ja) 2016-06-21 2020-10-14 東京応化工業株式会社 レジスト組成物、レジストパターン形成方法及び化合物

Patent Citations (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3849137A (en) 1971-10-12 1974-11-19 Basf Ag Lithographic printing plates and photoresists comprising a photosensitive polymer
US3779778A (en) 1972-02-09 1973-12-18 Minnesota Mining & Mfg Photosolubilizable compositions and elements
JPS55164824A (en) 1979-06-05 1980-12-22 Basf Ag Positiveeprocessing layerrtype transfer print material
EP0126712A1 (fr) 1983-05-18 1984-11-28 Ciba-Geigy Ag Composition durcissable et son utilisation
JPS6269263A (ja) 1985-09-24 1987-03-30 Toshiba Corp 感光性組成物
JPS62153853A (ja) 1985-12-27 1987-07-08 Toshiba Corp 感光性組成物
JPS6326653A (ja) 1986-07-21 1988-02-04 Tosoh Corp フオトレジスト材
JPS63146029A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63146038A (ja) 1986-12-10 1988-06-18 Toshiba Corp 感光性組成物
JPS63163452A (ja) 1986-12-17 1988-07-06 チバ−ガイギー　アクチェンゲゼルシャフト 画像形成方法
DE3914407A1 (de) 1989-04-29 1990-10-31 Basf Ag Strahlungsempfindliche polymere und positiv arbeitendes aufzeichnungsmaterial
JP2000122294A (ja) 1998-08-10 2000-04-28 Toshiba Corp 感光性組成物及びパタ―ン形成方法
JP2010061117A (ja) 2008-08-07 2010-03-18 Sumitomo Chemical Co Ltd 化学増幅型ポジ型レジスト組成物
JP2010204634A (ja) 2008-12-11 2010-09-16 Sumitomo Chemical Co Ltd フォトレジスト組成物
JP2010204646A (ja) 2009-02-06 2010-09-16 Sumitomo Chemical Co Ltd 化学増幅型フォトレジスト組成物及びパターン形成方法
JP2011039502A (ja) 2009-07-14 2011-02-24 Sumitomo Chemical Co Ltd レジスト組成物
JP2011116747A (ja) 2009-10-27 2011-06-16 Sumitomo Chemical Co Ltd 固体状のアンモニウム塩化合物の製造方法
JP2012006908A (ja) 2010-01-14 2012-01-12 Sumitomo Chemical Co Ltd 塩、フォトレジスト組成物及びレジストパターンの製造方法
JP2012072109A (ja) 2010-02-16 2012-04-12 Sumitomo Chemical Co Ltd 塩及び酸発生剤の製造方法
JP2011191745A (ja) 2010-02-16 2011-09-29 Sumitomo Chemical Co Ltd レジスト組成物
JP2012012577A (ja) 2010-06-01 2012-01-19 Shin-Etsu Chemical Co Ltd 重合性モノマー、高分子化合物、化学増幅ポジ型レジスト材料、及びパターン形成方法
JP2012041274A (ja) 2010-08-12 2012-03-01 Idemitsu Kosan Co Ltd ホモアダマンタン誘導体、その製造方法及びフォトレジスト組成物
WO2012050015A1 (fr) 2010-10-13 2012-04-19 セントラル硝子株式会社 Sulfonate polymérisable à teneur en fluor, résine de sulfonate à teneur en fluor, composition de réserve et procédé de formation de motif à l'aide de la composition
JP2012229206A (ja) 2011-04-13 2012-11-22 Sumitomo Chemical Co Ltd 塩、レジスト組成物及びレジストパターンの製造方法
JP2015147926A (ja) 2014-01-10 2015-08-20 住友化学株式会社 樹脂及びレジスト組成物
JP2016079235A (ja) 2014-10-14 2016-05-16 住友化学株式会社 樹脂、レジスト組成物及びレジストパターンの製造方法
JP2017015777A (ja) 2015-06-26 2017-01-19 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、光反応性クエンチャー及び高分子化合物

Also Published As

Publication number Publication date
BE1026164B1 (fr) 2020-04-06
US20200223795A9 (en) 2020-07-16
US20190315684A1 (en) 2019-10-17
JP7389562B2 (ja) 2023-11-30
JP2019182860A (ja) 2019-10-24
US11820735B2 (en) 2023-11-21
KR20190119534A (ko) 2019-10-22
JP2023169194A (ja) 2023-11-29
TW201943695A (zh) 2019-11-16
TWI811333B (zh) 2023-08-11

Similar Documents

Publication Publication Date Title
BE1026164A1 (fr) Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist
CR20210050A (es) Agente profiláctico o terapéutico para atrofia muscular espinal
JP2016536364A5 (fr)
BR112018016932A2 (pt) processo para a preparação de ácido 4 -fenil -5 -alcoxicarbonil -2 -tiazol -2 -il -1,4 -diidropirimidin -6 -il[metil] -3 -oxo -5,6,8,8a -tetrahidro -1h -imidazo[1,5 -a]pirazin -2 -il] -carboxil acid
CY1117923T1 (el) Αζωτουχος ετεροκυκλικη ενωση και γεωργικο ή κηπουρικο μυκητοκτονο
CO2019011604A2 (es) Compuestos inhibidores de vmat2, composiciones y métodos relativos a los mismos
WO2018232005A3 (fr) Composés et nanostructures antimicrobiens
BE1026157A1 (fr) Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist
MA39315A1 (fr) Dérivés de pyridazine à utiliser dans la prévention ou le traitement d'un trouble ataxique
BR112013002557A2 (pt) composições de anti-sedimentação e métodos para utilização
CL2021000086A1 (es) Derivados de pirrolo [1,2-b] piridazina
BR112023004550A2 (pt) Compostos tricíclicos substituídos
RU2018109256A (ru) Производное мочевины и его применение
JP2019500319A5 (fr)
BE1026363A1 (fr) Sel, generateur d'acide, composition de resist et procede pour produire un motif de resist
FR3080851B1 (fr) Procede de synthese de molecules aromatiques fluorees en presence d'un photocatalyseur
FR3041347B1 (fr) Melange d'initiateurs, composition, leur utilisation, procede de preparation d'un polymere polyol et polymere polyol obtenu par le procede
GB1047061A (en) Polymers and a process for the preparation thereof
FR3085377B1 (fr) Procede de preparation de nitropyrazoles
MY191968A (en) Wrinkle ameliorating agent
MX2019006108A (es) Agente de mejoramiento de arrugas.
FR3054236B1 (fr) Procede de synthese de polyamide pa 6-6
FR3073845B1 (fr) Procede de preparation de trimeres de 1-decene
BR112023018518A2 (pt) Compostos para uso no tratamento e prevenção de covid-19
DK58380A (da) Fremgangsmaade til fremstilling af thiazolderivater

Legal Events

Date Code Title Description
FG Patent granted

Effective date: 20200406