AU766803B2 - Oxime derivatives and the use thereof as latent acids - Google Patents

Oxime derivatives and the use thereof as latent acids Download PDF

Info

Publication number
AU766803B2
AU766803B2 AU24200/00A AU2420000A AU766803B2 AU 766803 B2 AU766803 B2 AU 766803B2 AU 24200/00 A AU24200/00 A AU 24200/00A AU 2420000 A AU2420000 A AU 2420000A AU 766803 B2 AU766803 B2 AU 766803B2
Authority
AU
Australia
Prior art keywords
phenyl
substituted
unsubstituted
alkyl
acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU24200/00A
Other languages
English (en)
Other versions
AU2420000A (en
Inventor
Toshikage Asakura
Jean-Luc Birbaum
Kurt Dietliker
Masaki Ohwa
Junichi Tanabe
Hitoshi Yamato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BASF Schweiz AG
Original Assignee
Ciba Spezialitaetenchemie Holding AG
Ciba SC Holding AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27240245&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU766803(B2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Ciba Spezialitaetenchemie Holding AG, Ciba SC Holding AG filed Critical Ciba Spezialitaetenchemie Holding AG
Publication of AU2420000A publication Critical patent/AU2420000A/en
Application granted granted Critical
Publication of AU766803B2 publication Critical patent/AU766803B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G7/00—Selection of materials for use in image-receiving members, i.e. for reversal by physical contact; Manufacture thereof
    • G03G7/0006—Cover layers for image-receiving members; Strippable coversheets
    • G03G7/002—Organic components thereof
    • G03G7/0026—Organic components thereof being macromolecular
    • G03G7/004—Organic components thereof being macromolecular obtained by reactions only involving carbon-to-carbon unsaturated bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C251/00—Compounds containing nitrogen atoms doubly-bound to a carbon skeleton
    • C07C251/32—Oximes
    • C07C251/62—Oximes having oxygen atoms of oxyimino groups esterified
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C309/00—Sulfonic acids; Halides, esters, or anhydrides thereof
    • C07C309/63—Esters of sulfonic acids
    • C07C309/64—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms
    • C07C309/65—Esters of sulfonic acids having sulfur atoms of esterified sulfo groups bound to acyclic carbon atoms of a saturated carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C317/00—Sulfones; Sulfoxides
    • C07C317/26—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C317/32—Sulfones; Sulfoxides having sulfone or sulfoxide groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton with sulfone or sulfoxide groups bound to carbon atoms of six-membered aromatic rings of the carbon skeleton
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C323/00—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups
    • C07C323/23—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton
    • C07C323/46—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms
    • C07C323/47—Thiols, sulfides, hydropolysulfides or polysulfides substituted by halogen, oxygen or nitrogen atoms, or by sulfur atoms not being part of thio groups containing thio groups and nitrogen atoms, not being part of nitro or nitroso groups, bound to the same carbon skeleton having at least one of the nitrogen atoms, not being part of nitro or nitroso groups, further bound to other hetero atoms to oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C381/00—Compounds containing carbon and sulfur and having functional groups not covered by groups C07C301/00 - C07C337/00
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D319/00—Heterocyclic compounds containing six-membered rings having two oxygen atoms as the only ring hetero atoms
    • C07D319/10—1,4-Dioxanes; Hydrogenated 1,4-dioxanes
    • C07D319/14—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems
    • C07D319/16—1,4-Dioxanes; Hydrogenated 1,4-dioxanes condensed with carbocyclic rings or ring systems condensed with one six-membered ring
    • C07D319/18—Ethylenedioxybenzenes, not substituted on the hetero ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D333/00—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom
    • C07D333/02—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings
    • C07D333/04—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom
    • C07D333/06—Heterocyclic compounds containing five-membered rings having one sulfur atom as the only ring hetero atom not condensed with other rings not substituted on the ring sulphur atom with only hydrogen atoms, hydrocarbon or substituted hydrocarbon radicals, directly attached to the ring carbon atoms
    • C07D333/22—Radicals substituted by doubly bound hetero atoms, or by two hetero atoms other than halogen singly bound to the same carbon atom
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2602/00—Systems containing two condensed rings
    • C07C2602/36—Systems containing two condensed rings the rings having more than two atoms in common
    • C07C2602/42—Systems containing two condensed rings the rings having more than two atoms in common the bicyclo ring system containing seven carbon atoms
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/114—Initiator containing
    • Y10S430/12—Nitrogen compound containing
AU24200/00A 1999-03-31 2000-03-30 Oxime derivatives and the use thereof as latent acids Ceased AU766803B2 (en)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
DE99810273 1999-03-31
EP99810273 1999-03-31
DE99810287 1999-04-07
EP99810287 1999-04-07
DE99810779 1999-08-30
EP99810779 1999-08-30

Publications (2)

Publication Number Publication Date
AU2420000A AU2420000A (en) 2000-10-05
AU766803B2 true AU766803B2 (en) 2003-10-23

Family

ID=27240245

Family Applications (1)

Application Number Title Priority Date Filing Date
AU24200/00A Ceased AU766803B2 (en) 1999-03-31 2000-03-30 Oxime derivatives and the use thereof as latent acids

Country Status (12)

Country Link
US (1) US6512020B1 (US06512020-20030128-C00115.png)
KR (1) KR100700901B1 (US06512020-20030128-C00115.png)
AT (1) AT410262B (US06512020-20030128-C00115.png)
AU (1) AU766803B2 (US06512020-20030128-C00115.png)
BE (1) BE1013627A3 (US06512020-20030128-C00115.png)
CA (1) CA2302875A1 (US06512020-20030128-C00115.png)
CH (1) CH694663A5 (US06512020-20030128-C00115.png)
ES (1) ES2168953B1 (US06512020-20030128-C00115.png)
IT (1) IT1318431B1 (US06512020-20030128-C00115.png)
MY (1) MY116074A (US06512020-20030128-C00115.png)
NL (2) NL1014545C2 (US06512020-20030128-C00115.png)
SE (1) SE522082C2 (US06512020-20030128-C00115.png)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI272451B (en) * 2000-09-25 2007-02-01 Ciba Sc Holding Ag Chemically amplified photoresist composition, process for preparation of a photoresist, and use of said chemically amplified photoresist composition
JP3860170B2 (ja) * 2001-06-11 2006-12-20 チバ スペシャルティ ケミカルズ ホールディング インコーポレーテッド 組み合わされた構造を有するオキシムエステルの光開始剤
US6824954B2 (en) * 2001-08-23 2004-11-30 Jsr Corporation Sulfonyloxime compound, and radiation sensitive acid generator, positive type radiation sensitive resin composition and negative type radiation sensitive resin composition using same
JP2005517026A (ja) * 2002-02-06 2005-06-09 チバ　スペシャルティ　ケミカルズ　ホールディング　インコーポレーテッド スルホナート誘導体及び潜酸としてのその使用
US6875480B2 (en) * 2002-02-27 2005-04-05 Industrial Technology Research Institute Method of enhancement of electrical conductivity for conductive polymer by use of field effect control
JP3841405B2 (ja) * 2002-03-29 2006-11-01 富士写真フイルム株式会社 ネガ型レジスト組成物
US7399577B2 (en) * 2003-02-19 2008-07-15 Ciba Specialty Chemicals Corporation Halogenated oxime derivatives and the use thereof
US7098463B2 (en) * 2003-03-03 2006-08-29 Heuris Pharma, Llc Three-dimensional dosimeter for penetrating radiation and method of use
JP2008506749A (ja) * 2004-07-20 2008-03-06 チバ　スペシャルティ　ケミカルズ　ホールディング　インコーポレーテッド オキシム誘導体および潜在酸としてのそれらの使用
TWI332122B (en) 2005-04-06 2010-10-21 Shinetsu Chemical Co Novel sulfonate salts and derivatives, photoacid generators, resist compositions and patterning process
JP4626758B2 (ja) * 2005-07-07 2011-02-09 信越化学工業株式会社 含フッ素環状構造を有するケイ素化合物及びシリコーン樹脂、それを用いたレジスト組成物、及びパターン形成方法
US20070077452A1 (en) * 2005-10-04 2007-04-05 Jie Liu Organic light emitting devices having latent activated layers and methods of fabricating the same
KR100814231B1 (ko) * 2005-12-01 2008-03-17 주식회사 엘지화학 옥심 에스테르를 포함하는 트리아진계 광활성 화합물을포함하는 투명한 감광성 조성물
US20070176167A1 (en) * 2006-01-27 2007-08-02 General Electric Company Method of making organic light emitting devices
US8293436B2 (en) * 2006-02-24 2012-10-23 Fujifilm Corporation Oxime derivative, photopolymerizable composition, color filter, and process for producing the same
CN101024624B (zh) * 2006-02-24 2013-09-11 富士胶片株式会社 肟衍生物、可光聚合的组合物、滤色片及其制造方法
US7771913B2 (en) * 2006-04-04 2010-08-10 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process using the same
JP4548617B2 (ja) * 2006-06-09 2010-09-22 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
JP4623311B2 (ja) * 2006-06-14 2011-02-02 信越化学工業株式会社 化学増幅レジスト材料用光酸発生剤、及び該光酸発生剤を含有するレジスト材料、並びにこれを用いたパターン形成方法
CN101473268A (zh) * 2006-06-20 2009-07-01 西巴控股有限公司 肟磺酸酯和其作为潜伏酸的用途
KR101035742B1 (ko) * 2006-09-28 2011-05-20 신에쓰 가가꾸 고교 가부시끼가이샤 신규 광산 발생제 및 이것을 이용한 레지스트 재료 및 패턴형성 방법
JP4509080B2 (ja) * 2006-09-28 2010-07-21 信越化学工業株式会社 シルセスキオキサン系化合物混合物及び加水分解性シラン化合物、その製造方法及びそれを用いたレジスト組成物並びにパターン形成方法及び基板の加工方法
KR101242332B1 (ko) * 2006-10-17 2013-03-12 신에쓰 가가꾸 고교 가부시끼가이샤 레지스트 재료 및 이것을 이용한 패턴 형성 방법
JP4784760B2 (ja) * 2006-10-20 2011-10-05 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4288520B2 (ja) * 2006-10-24 2009-07-01 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP2008129389A (ja) * 2006-11-22 2008-06-05 Shin Etsu Chem Co Ltd ポジ型レジスト材料及びパターン形成方法
US7618764B2 (en) * 2006-11-22 2009-11-17 Shin-Etsu Chemical Co., Ltd. Positive resist compositions and patterning process
JP4314494B2 (ja) * 2006-11-29 2009-08-19 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4910662B2 (ja) * 2006-11-29 2012-04-04 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4435196B2 (ja) * 2007-03-29 2010-03-17 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
US8466096B2 (en) * 2007-04-26 2013-06-18 Afton Chemical Corporation 1,3,2-dioxaphosphorinane, 2-sulfide derivatives for use as anti-wear additives in lubricant compositions
US20080268839A1 (en) * 2007-04-27 2008-10-30 Ayers John I Reducing a number of registration termination massages in a network for cellular devices
JP5035560B2 (ja) * 2007-07-04 2012-09-26 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4475435B2 (ja) * 2007-07-30 2010-06-09 信越化学工業株式会社 含フッ素単量体、含フッ素高分子化合物、レジスト材料及びパターン形成方法
JP5035562B2 (ja) * 2007-08-22 2012-09-26 信越化学工業株式会社 パターン形成方法
JP5019071B2 (ja) * 2007-09-05 2012-09-05 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5013119B2 (ja) * 2007-09-20 2012-08-29 信越化学工業株式会社 パターン形成方法並びにこれに用いるレジスト材料
JP4993138B2 (ja) * 2007-09-26 2012-08-08 信越化学工業株式会社 レジスト材料及びこれを用いたパターン形成方法
JP4513990B2 (ja) 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4844761B2 (ja) * 2008-01-18 2011-12-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4513989B2 (ja) 2008-01-18 2010-07-28 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP5131461B2 (ja) * 2008-02-14 2013-01-30 信越化学工業株式会社 高分子化合物、レジスト材料、及びパターン形成方法
JP5071658B2 (ja) * 2008-02-14 2012-11-14 信越化学工業株式会社 レジスト材料、レジスト保護膜材料、及びパターン形成方法
CN102067035A (zh) * 2008-02-21 2011-05-18 巴斯夫欧洲公司 Uv量指示剂薄膜
JP5177432B2 (ja) * 2008-02-21 2013-04-03 信越化学工業株式会社 パターン形成方法
JP4623324B2 (ja) * 2008-03-18 2011-02-02 信越化学工業株式会社 水酸基を有する単量体、高分子化合物、レジスト材料及びパターン形成方法
JP5245956B2 (ja) * 2008-03-25 2013-07-24 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP4569786B2 (ja) 2008-05-01 2010-10-27 信越化学工業株式会社 新規光酸発生剤並びにこれを用いたレジスト材料及びパターン形成方法
JP5381298B2 (ja) * 2008-05-12 2014-01-08 信越化学工業株式会社 レジスト保護膜材料及びパターン形成方法
JP4650644B2 (ja) * 2008-05-12 2011-03-16 信越化学工業株式会社 レジスト材料及びパターン形成方法
JP4771101B2 (ja) * 2008-09-05 2011-09-14 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4655128B2 (ja) * 2008-09-05 2011-03-23 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4743451B2 (ja) * 2008-09-05 2011-08-10 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
JP4743450B2 (ja) * 2008-09-05 2011-08-10 信越化学工業株式会社 ポジ型レジスト材料及びパターン形成方法
CA2736521A1 (en) * 2008-09-09 2010-03-18 Sonette Myburgh, Trustee For The Herman Myburgh Preservation Trust Nail driving tool mechanism
EP2414894B1 (en) * 2009-03-30 2014-02-12 Basf Se Uv-dose indicator films
JP5177434B2 (ja) * 2009-04-08 2013-04-03 信越化学工業株式会社 パターン形成方法
US8691925B2 (en) 2011-09-23 2014-04-08 Az Electronic Materials (Luxembourg) S.A.R.L. Compositions of neutral layer for directed self assembly block copolymers and processes thereof
US8686109B2 (en) 2012-03-09 2014-04-01 Az Electronic Materials (Luxembourg) S.A.R.L. Methods and materials for removing metals in block copolymers
US8835581B2 (en) 2012-06-08 2014-09-16 Az Electronic Materials (Luxembourg) S.A.R.L. Neutral layer polymer composition for directed self assembly and processes thereof
US10457088B2 (en) 2013-05-13 2019-10-29 Ridgefield Acquisition Template for self assembly and method of making a self assembled pattern
US9093263B2 (en) 2013-09-27 2015-07-28 Az Electronic Materials (Luxembourg) S.A.R.L. Underlayer composition for promoting self assembly and method of making and using
US9181449B2 (en) 2013-12-16 2015-11-10 Az Electronic Materials (Luxembourg) S.A.R.L. Underlayer composition for promoting self assembly and method of making and using
KR101491975B1 (ko) 2014-03-14 2015-02-11 (주)휴넷플러스 화학 증폭형 포지티브 감광성 경화 수지 조성물, 이를 이용한 경화막의 제조 방법 및 경화막을 포함하는 전자소자
EP3253735B1 (en) 2015-02-02 2021-03-31 Basf Se Latent acids and their use
KR102409830B1 (ko) 2016-08-18 2022-06-15 리지필드 액퀴지션 자가-조립 적용을 위한 중합체 조성물
EP3858872B1 (en) 2016-12-21 2022-05-11 Merck Patent GmbH Compositions and processes for self-assembly of block copolymers
WO2018155547A1 (ja) * 2017-02-23 2018-08-30 日立化成デュポンマイクロシステムズ株式会社 感光性樹脂組成物、硬化パターンの製造方法、硬化物、層間絶縁膜、カバーコート層、表面保護膜、及び電子部品

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
DE19644797A1 (de) * 1995-10-31 1997-05-07 Ciba Geigy Ag Oximsulfonsäureester und deren Verwendung als latente Sulfonsäuren

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4329488A (en) * 1980-12-05 1982-05-11 Hoffmann-La Roche Inc. Propionic acid esters and herbicidal use thereof
DE3660255D1 (en) * 1985-04-12 1988-07-07 Ciba Geigy Ag Oxime sulphonates containing reactive groups
GB8608528D0 (en) * 1986-04-08 1986-05-14 Ciba Geigy Ag Production of positive images
US5104770A (en) 1988-03-11 1992-04-14 Hoechst Celanese Corporation Positive-working photoresist compositions
JP2782876B2 (ja) 1989-12-28 1998-08-06 住友化学工業株式会社 オキシムエーテルの異性化方法
DE4203170A1 (de) 1992-02-05 1993-08-12 Basf Ag Verfahren zur herstellung von e-oximethern von phenylglyoxylsaeureestern
DE59309494D1 (de) 1992-05-22 1999-05-12 Ciba Geigy Ag Hochauflösender I-Linien Photoresist mit höherer Empfindlichkeit
JP3456808B2 (ja) 1995-09-29 2003-10-14 東京応化工業株式会社 ホトレジスト組成物
JP3830183B2 (ja) * 1995-09-29 2006-10-04 東京応化工業株式会社 オキシムスルホネート化合物及びレジスト用酸発生剤
JP3665166B2 (ja) * 1996-07-24 2005-06-29 東京応化工業株式会社 化学増幅型レジスト組成物及びそれに用いる酸発生剤
US6042988A (en) * 1996-12-26 2000-03-28 Tokyo Ohka Kogyo Co., Ltd. Chemical-amplification-type negative resist composition
TW550439B (en) 1997-07-01 2003-09-01 Ciba Sc Holding Ag New oxime sulfonates as latent acids and compositions and photoresists comprising said oxime sulfonates
US6485886B1 (en) * 1998-10-29 2002-11-26 Ciba Specialty Chemicals Corporation Oxime derivatives and the use thereof as latent acids
TW588221B (en) * 2000-09-07 2004-05-21 Shinetsu Chemical Co Polymers, resist compositions and patterning process

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4540598A (en) * 1983-08-17 1985-09-10 Ciba-Geigy Corporation Process for curing acid-curable finishes
DE19644797A1 (de) * 1995-10-31 1997-05-07 Ciba Geigy Ag Oximsulfonsäureester und deren Verwendung als latente Sulfonsäuren

Also Published As

Publication number Publication date
ATA5422000A (de) 2002-07-15
ES2168953B1 (es) 2003-10-16
NL1019981C2 (nl) 2002-10-03
ITMI20000662A0 (it) 2000-03-30
CA2302875A1 (en) 2000-09-30
KR100700901B1 (ko) 2007-03-29
AT410262B (de) 2003-03-25
BE1013627A3 (fr) 2002-05-07
AU2420000A (en) 2000-10-05
CH694663A5 (de) 2005-05-31
SE0001090L (sv) 2000-10-01
ES2168953A1 (es) 2002-06-16
KR20000063080A (ko) 2000-10-25
US6512020B1 (en) 2003-01-28
NL1019981A1 (nl) 2002-04-11
IT1318431B1 (it) 2003-08-25
ITMI20000662A1 (it) 2001-09-30
MY116074A (en) 2003-10-31
NL1014545A1 (nl) 2000-10-03
SE522082C2 (sv) 2004-01-13
NL1014545C2 (nl) 2002-02-26
SE0001090D0 (sv) 2000-03-28

Similar Documents

Publication Publication Date Title
AU766803B2 (en) Oxime derivatives and the use thereof as latent acids
US6261738B1 (en) Oxime derivatives and the use thereof as latent acids
EP1595182B1 (en) Halogenated oxime derivatives and the use thereof as latent acids
US7244544B2 (en) Oxime derivatives and the use thereof as latent acids
EP1344109B1 (en) Onium salts and the use therof as latent acids
EP1769286B1 (en) Oxime derivatives and the use therof as latent acids
EP1472576B1 (en) Sulfonate derivatives and the use therof as latent acids
EP1392675B1 (en) Substituted oxime derivatives and the use thereof as latent acids
CZ20001117A3 (cs) Oximové deriváty a jejich použití jako latentních kyselin

Legal Events

Date Code Title Description
FGA Letters patent sealed or granted (standard patent)