AU537858B2 - Fet zones formed in a self registering manner - Google Patents

Fet zones formed in a self registering manner

Info

Publication number
AU537858B2
AU537858B2 AU57651/80A AU5765180A AU537858B2 AU 537858 B2 AU537858 B2 AU 537858B2 AU 57651/80 A AU57651/80 A AU 57651/80A AU 5765180 A AU5765180 A AU 5765180A AU 537858 B2 AU537858 B2 AU 537858B2
Authority
AU
Australia
Prior art keywords
fet
zones formed
self registering
registering manner
manner
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU57651/80A
Other languages
English (en)
Other versions
AU5765180A (en
Inventor
Pieter Johannes Wilhelmus Jochems
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of AU5765180A publication Critical patent/AU5765180A/en
Application granted granted Critical
Publication of AU537858B2 publication Critical patent/AU537858B2/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/027—Manufacture or treatment of FETs having insulated gates [IGFET] of lateral single-gate IGFETs
    • H10P76/40—
    • H10W10/0126—
    • H10W10/13—
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/911—Differential oxidation and etching
AU57651/80A 1979-04-23 1980-04-21 Fet zones formed in a self registering manner Ceased AU537858B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL7903158 1979-04-23
NL7903158A NL7903158A (nl) 1979-04-23 1979-04-23 Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze.

Publications (2)

Publication Number Publication Date
AU5765180A AU5765180A (en) 1980-10-30
AU537858B2 true AU537858B2 (en) 1984-07-19

Family

ID=19833027

Family Applications (1)

Application Number Title Priority Date Filing Date
AU57651/80A Ceased AU537858B2 (en) 1979-04-23 1980-04-21 Fet zones formed in a self registering manner

Country Status (10)

Country Link
US (1) US4343079A (cg-RX-API-DMAC10.html)
JP (1) JPS55141758A (cg-RX-API-DMAC10.html)
AU (1) AU537858B2 (cg-RX-API-DMAC10.html)
CA (1) CA1146675A (cg-RX-API-DMAC10.html)
CH (1) CH653482A5 (cg-RX-API-DMAC10.html)
DE (1) DE3015101A1 (cg-RX-API-DMAC10.html)
FR (1) FR2455361A1 (cg-RX-API-DMAC10.html)
GB (1) GB2047961B (cg-RX-API-DMAC10.html)
IT (1) IT1140878B (cg-RX-API-DMAC10.html)
NL (1) NL7903158A (cg-RX-API-DMAC10.html)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55156370A (en) * 1979-05-25 1980-12-05 Hitachi Ltd Manufacture of semiconductor device
US5252505A (en) * 1979-05-25 1993-10-12 Hitachi, Ltd. Method for manufacturing a semiconductor device
JPS60106142A (ja) * 1983-11-15 1985-06-11 Nec Corp 半導体素子の製造方法
US4675982A (en) * 1985-10-31 1987-06-30 International Business Machines Corporation Method of making self-aligned recessed oxide isolation regions
IL106513A (en) 1992-07-31 1997-03-18 Hughes Aircraft Co Integrated circuit security system and method with implanted interconnections
US5973375A (en) * 1997-06-06 1999-10-26 Hughes Electronics Corporation Camouflaged circuit structure with step implants

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3698966A (en) * 1970-02-26 1972-10-17 North American Rockwell Processes using a masking layer for producing field effect devices having oxide isolation
NL164424C (nl) * 1970-06-04 1980-12-15 Philips Nv Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag.
NL173110C (nl) * 1971-03-17 1983-12-01 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht.
JPS5528229B1 (cg-RX-API-DMAC10.html) * 1971-03-19 1980-07-26
FR2134290B1 (cg-RX-API-DMAC10.html) * 1971-04-30 1977-03-18 Texas Instruments France
NL7113561A (cg-RX-API-DMAC10.html) * 1971-10-02 1973-04-04
US4023195A (en) * 1974-10-23 1977-05-10 Smc Microsystems Corporation MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions
US4013484A (en) * 1976-02-25 1977-03-22 Intel Corporation High density CMOS process
JPS52131483A (en) * 1976-04-28 1977-11-04 Hitachi Ltd Mis-type semiconductor device
NL185376C (nl) * 1976-10-25 1990-03-16 Philips Nv Werkwijze ter vervaardiging van een halfgeleiderinrichting.
JPS53123661A (en) * 1977-04-04 1978-10-28 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS53123678A (en) * 1977-04-04 1978-10-28 Nec Corp Manufacture of field effect semiconductor device of insulation gate type
JPS53144280A (en) * 1977-05-23 1978-12-15 Hitachi Ltd Mis semiconductor device
US4268950A (en) * 1978-06-05 1981-05-26 Texas Instruments Incorporated Post-metal ion implant programmable MOS read only memory
US4168999A (en) * 1978-12-26 1979-09-25 Fairchild Camera And Instrument Corporation Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques

Also Published As

Publication number Publication date
CH653482A5 (de) 1985-12-31
AU5765180A (en) 1980-10-30
FR2455361B1 (cg-RX-API-DMAC10.html) 1983-04-29
FR2455361A1 (fr) 1980-11-21
DE3015101C2 (cg-RX-API-DMAC10.html) 1990-03-29
US4343079A (en) 1982-08-10
GB2047961A (en) 1980-12-03
GB2047961B (en) 1983-08-03
CA1146675A (en) 1983-05-17
IT8021514A0 (it) 1980-04-18
IT1140878B (it) 1986-10-10
DE3015101A1 (de) 1980-11-06
NL7903158A (nl) 1980-10-27
JPS55141758A (en) 1980-11-05

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