FR2134290B1 - - Google Patents
Info
- Publication number
- FR2134290B1 FR2134290B1 FR7115577A FR7115577A FR2134290B1 FR 2134290 B1 FR2134290 B1 FR 2134290B1 FR 7115577 A FR7115577 A FR 7115577A FR 7115577 A FR7115577 A FR 7115577A FR 2134290 B1 FR2134290 B1 FR 2134290B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H10W10/0125—
-
- H10W10/13—
-
- H10W74/40—
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7115577A FR2134290B1 (cg-RX-API-DMAC10.html) | 1971-04-30 | 1971-04-30 | |
| US05/265,854 US4043848A (en) | 1971-04-30 | 1972-06-23 | Method of fabrication of insulated gate field effect semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| FR7115577A FR2134290B1 (cg-RX-API-DMAC10.html) | 1971-04-30 | 1971-04-30 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2134290A1 FR2134290A1 (cg-RX-API-DMAC10.html) | 1972-12-08 |
| FR2134290B1 true FR2134290B1 (cg-RX-API-DMAC10.html) | 1977-03-18 |
Family
ID=9076226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7115577A Expired FR2134290B1 (cg-RX-API-DMAC10.html) | 1971-04-30 | 1971-04-30 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US4043848A (cg-RX-API-DMAC10.html) |
| FR (1) | FR2134290B1 (cg-RX-API-DMAC10.html) |
Families Citing this family (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4186408A (en) * | 1975-05-20 | 1980-01-29 | International Business Machines Corporation | IGFET with partial planar oxide |
| JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
| US4217153A (en) * | 1977-04-04 | 1980-08-12 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
| JPS5492175A (en) * | 1977-12-29 | 1979-07-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| NL7903158A (nl) * | 1979-04-23 | 1980-10-27 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
| US5798291A (en) * | 1995-03-20 | 1998-08-25 | Lg Semicon Co., Ltd. | Method of making a semiconductor device with recessed source and drain |
| US5907777A (en) * | 1997-07-31 | 1999-05-25 | International Business Machines Corporation | Method for forming field effect transistors having different threshold voltages and devices formed thereby |
| JP3015822B2 (ja) | 1998-03-06 | 2000-03-06 | 工業技術院長 | 固体選択成長用マスク及びその製造方法 |
| US6724088B1 (en) * | 1999-04-20 | 2004-04-20 | International Business Machines Corporation | Quantum conductive barrier for contact to shallow diffusion region |
| US20030071327A1 (en) * | 2001-10-17 | 2003-04-17 | Motorola, Inc. | Method and apparatus utilizing monocrystalline insulator |
| US7067439B2 (en) | 2002-06-14 | 2006-06-27 | Applied Materials, Inc. | ALD metal oxide deposition process using direct oxidation |
| US8119210B2 (en) | 2004-05-21 | 2012-02-21 | Applied Materials, Inc. | Formation of a silicon oxynitride layer on a high-k dielectric material |
| US20060105114A1 (en) * | 2004-11-16 | 2006-05-18 | White John M | Multi-layer high quality gate dielectric for low-temperature poly-silicon TFTs |
| US7678710B2 (en) | 2006-03-09 | 2010-03-16 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| US7837838B2 (en) | 2006-03-09 | 2010-11-23 | Applied Materials, Inc. | Method of fabricating a high dielectric constant transistor gate using a low energy plasma apparatus |
| US7645710B2 (en) | 2006-03-09 | 2010-01-12 | Applied Materials, Inc. | Method and apparatus for fabricating a high dielectric constant transistor gate using a low energy plasma system |
| TWI435376B (zh) | 2006-09-26 | 2014-04-21 | 應用材料股份有限公司 | 用於缺陷鈍化之高ｋ閘極堆疊的氟電漿處理 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3477886A (en) * | 1964-12-07 | 1969-11-11 | Motorola Inc | Controlled diffusions in semiconductive materials |
| US3597667A (en) * | 1966-03-01 | 1971-08-03 | Gen Electric | Silicon oxide-silicon nitride coatings for semiconductor devices |
| US3534234A (en) * | 1966-12-15 | 1970-10-13 | Texas Instruments Inc | Modified planar process for making semiconductor devices having ultrafine mesa type geometry |
| NL152707B (nl) * | 1967-06-08 | 1977-03-15 | Philips Nv | Halfgeleiderinrichting bevattende een veldeffecttransistor van het type met geisoleerde poortelektrode en werkwijze ter vervaardiging daarvan. |
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1971
- 1971-04-30 FR FR7115577A patent/FR2134290B1/fr not_active Expired
-
1972
- 1972-06-23 US US05/265,854 patent/US4043848A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4043848A (en) | 1977-08-23 |
| FR2134290A1 (cg-RX-API-DMAC10.html) | 1972-12-08 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |