JPS55141758A - Method of fabricating insulated gate field effect transistor - Google Patents
Method of fabricating insulated gate field effect transistorInfo
- Publication number
- JPS55141758A JPS55141758A JP5181280A JP5181280A JPS55141758A JP S55141758 A JPS55141758 A JP S55141758A JP 5181280 A JP5181280 A JP 5181280A JP 5181280 A JP5181280 A JP 5181280A JP S55141758 A JPS55141758 A JP S55141758A
- Authority
- JP
- Japan
- Prior art keywords
- field effect
- effect transistor
- insulated gate
- gate field
- fabricating insulated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005669 field effect Effects 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO
- H01L21/76213—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose
- H01L21/76216—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO introducing electrical inactive or active impurities in the local oxidation region, e.g. to alter LOCOS oxide growth characteristics or for additional isolation purpose introducing electrical active impurities in the local oxidation region for the sole purpose of creating channel stoppers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/911—Differential oxidation and etching
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/253,325 US4393556A (en) | 1980-04-18 | 1981-04-13 | Plastic buckle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
NL7903158A NL7903158A (nl) | 1979-04-23 | 1979-04-23 | Werkwijze voor het vervaardigen van een veldeffekt- transistor met geisoleerde poortelektrode, en transistor vervaardigd door toepassing van een derge- lijke werkwijze. |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55141758A true JPS55141758A (en) | 1980-11-05 |
Family
ID=19833027
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5181280A Pending JPS55141758A (en) | 1979-04-23 | 1980-04-21 | Method of fabricating insulated gate field effect transistor |
Country Status (10)
Country | Link |
---|---|
US (1) | US4343079A (ja) |
JP (1) | JPS55141758A (ja) |
AU (1) | AU537858B2 (ja) |
CA (1) | CA1146675A (ja) |
CH (1) | CH653482A5 (ja) |
DE (1) | DE3015101A1 (ja) |
FR (1) | FR2455361A1 (ja) |
GB (1) | GB2047961B (ja) |
IT (1) | IT1140878B (ja) |
NL (1) | NL7903158A (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5252505A (en) * | 1979-05-25 | 1993-10-12 | Hitachi, Ltd. | Method for manufacturing a semiconductor device |
JPS55156370A (en) * | 1979-05-25 | 1980-12-05 | Hitachi Ltd | Manufacture of semiconductor device |
JPS60106142A (ja) * | 1983-11-15 | 1985-06-11 | Nec Corp | 半導体素子の製造方法 |
US4675982A (en) * | 1985-10-31 | 1987-06-30 | International Business Machines Corporation | Method of making self-aligned recessed oxide isolation regions |
IL106513A (en) | 1992-07-31 | 1997-03-18 | Hughes Aircraft Co | Integrated circuit security system and method with implanted interconnections |
US5973375A (en) * | 1997-06-06 | 1999-10-26 | Hughes Electronics Corporation | Camouflaged circuit structure with step implants |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4013484A (en) * | 1976-02-25 | 1977-03-22 | Intel Corporation | High density CMOS process |
JPS53123678A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Manufacture of field effect semiconductor device of insulation gate type |
JPS53123661A (en) * | 1977-04-04 | 1978-10-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS53144280A (en) * | 1977-05-23 | 1978-12-15 | Hitachi Ltd | Mis semiconductor device |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3698966A (en) * | 1970-02-26 | 1972-10-17 | North American Rockwell | Processes using a masking layer for producing field effect devices having oxide isolation |
NL164424C (nl) * | 1970-06-04 | 1980-12-15 | Philips Nv | Werkwijze voor het vervaardigen van een veldeffect- transistor met een geisoleerde stuurelektrode, waarbij een door een tegen oxydatie maskerende laag vrijgelaten deel van het oppervlak van een siliciumlichaam aan een oxydatiebehandeling wordt onderworpen ter verkrijging van een althans gedeeltelijk in het siliciumlichaam verzonken siliciumoxydelaag. |
NL173110C (nl) * | 1971-03-17 | 1983-12-01 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting, waarbij op een oppervlak van een halfgeleiderlichaam een uit ten minste twee deellagen van verschillend materiaal samengestelde maskeringslaag wordt aangebracht. |
JPS5528229B1 (ja) * | 1971-03-19 | 1980-07-26 | ||
FR2134290B1 (ja) * | 1971-04-30 | 1977-03-18 | Texas Instruments France | |
NL7113561A (ja) * | 1971-10-02 | 1973-04-04 | ||
US4023195A (en) * | 1974-10-23 | 1977-05-10 | Smc Microsystems Corporation | MOS field-effect transistor structure with mesa-like contact and gate areas and selectively deeper junctions |
JPS52131483A (en) * | 1976-04-28 | 1977-11-04 | Hitachi Ltd | Mis-type semiconductor device |
NL185376C (nl) * | 1976-10-25 | 1990-03-16 | Philips Nv | Werkwijze ter vervaardiging van een halfgeleiderinrichting. |
US4268950A (en) * | 1978-06-05 | 1981-05-26 | Texas Instruments Incorporated | Post-metal ion implant programmable MOS read only memory |
US4168999A (en) * | 1978-12-26 | 1979-09-25 | Fairchild Camera And Instrument Corporation | Method for forming oxide isolated integrated injection logic semiconductor structures having minimal encroachment utilizing special masking techniques |
-
1979
- 1979-04-23 NL NL7903158A patent/NL7903158A/nl not_active Application Discontinuation
-
1980
- 1980-04-17 CA CA000350071A patent/CA1146675A/en not_active Expired
- 1980-04-18 FR FR8008773A patent/FR2455361A1/fr active Granted
- 1980-04-18 US US06/141,510 patent/US4343079A/en not_active Expired - Lifetime
- 1980-04-18 GB GB8012778A patent/GB2047961B/en not_active Expired
- 1980-04-18 IT IT21514/80A patent/IT1140878B/it active
- 1980-04-19 DE DE19803015101 patent/DE3015101A1/de active Granted
- 1980-04-21 JP JP5181280A patent/JPS55141758A/ja active Pending
- 1980-04-21 CH CH3064/80A patent/CH653482A5/de not_active IP Right Cessation
- 1980-04-21 AU AU57651/80A patent/AU537858B2/en not_active Ceased
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4013484A (en) * | 1976-02-25 | 1977-03-22 | Intel Corporation | High density CMOS process |
JPS53123678A (en) * | 1977-04-04 | 1978-10-28 | Nec Corp | Manufacture of field effect semiconductor device of insulation gate type |
JPS53123661A (en) * | 1977-04-04 | 1978-10-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
JPS53144280A (en) * | 1977-05-23 | 1978-12-15 | Hitachi Ltd | Mis semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
FR2455361A1 (fr) | 1980-11-21 |
FR2455361B1 (ja) | 1983-04-29 |
AU537858B2 (en) | 1984-07-19 |
DE3015101A1 (de) | 1980-11-06 |
US4343079A (en) | 1982-08-10 |
AU5765180A (en) | 1980-10-30 |
DE3015101C2 (ja) | 1990-03-29 |
CA1146675A (en) | 1983-05-17 |
IT8021514A0 (it) | 1980-04-18 |
CH653482A5 (de) | 1985-12-31 |
GB2047961B (en) | 1983-08-03 |
IT1140878B (it) | 1986-10-10 |
NL7903158A (nl) | 1980-10-27 |
GB2047961A (en) | 1980-12-03 |
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