JPS53123661A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS53123661A JPS53123661A JP3876377A JP3876377A JPS53123661A JP S53123661 A JPS53123661 A JP S53123661A JP 3876377 A JP3876377 A JP 3876377A JP 3876377 A JP3876377 A JP 3876377A JP S53123661 A JPS53123661 A JP S53123661A
- Authority
- JP
- Japan
- Prior art keywords
- manufacture
- semiconductor device
- formation
- insulating film
- opening part
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To realize the formation of a fine opening part as well as to make gentle the grade of a insulating film edge facing the opening part, by applying the selective oxidazation technic for the formation of an opening on the insulating film coated in a semiconductor region.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3876377A JPS53123661A (en) | 1977-04-04 | 1977-04-04 | Manufacture of semiconductor device |
US05/892,861 US4217153A (en) | 1977-04-04 | 1978-03-31 | Method of manufacturing semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3876377A JPS53123661A (en) | 1977-04-04 | 1977-04-04 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS53123661A true JPS53123661A (en) | 1978-10-28 |
Family
ID=12534312
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3876377A Pending JPS53123661A (en) | 1977-04-04 | 1977-04-04 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53123661A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141758A (en) * | 1979-04-23 | 1980-11-05 | Philips Nv | Method of fabricating insulated gate field effect transistor |
-
1977
- 1977-04-04 JP JP3876377A patent/JPS53123661A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55141758A (en) * | 1979-04-23 | 1980-11-05 | Philips Nv | Method of fabricating insulated gate field effect transistor |
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