AU2009260912B2 - Method for growing monocrystalline diamonds - Google Patents

Method for growing monocrystalline diamonds Download PDF

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Publication number
AU2009260912B2
AU2009260912B2 AU2009260912A AU2009260912A AU2009260912B2 AU 2009260912 B2 AU2009260912 B2 AU 2009260912B2 AU 2009260912 A AU2009260912 A AU 2009260912A AU 2009260912 A AU2009260912 A AU 2009260912A AU 2009260912 B2 AU2009260912 B2 AU 2009260912B2
Authority
AU
Australia
Prior art keywords
nitrogen
crystalline
diamond
gem grade
gases
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
AU2009260912A
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English (en)
Other versions
AU2009260912A1 (en
Inventor
Devi Shanker Misra
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Indian Institute of Technology Bombay
IIA Technologies Pte Ltd
Original Assignee
Indian Institute of Technology Bombay
IIA Technologies Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Institute of Technology Bombay, IIA Technologies Pte Ltd filed Critical Indian Institute of Technology Bombay
Publication of AU2009260912A1 publication Critical patent/AU2009260912A1/en
Assigned to IIA TECHNOLOGIES PTE. LTD., INDIAN INSTITUTE OF TECHNOLOGY BOMBAY reassignment IIA TECHNOLOGIES PTE. LTD. Alteration of Name(s) of Applicant(s) under S113 Assignors: INDIAN INSTITUTE OF TECHNOLOGY BOMBAY, NOZOMI TECHNOTRON PTE LTD
Application granted granted Critical
Publication of AU2009260912B2 publication Critical patent/AU2009260912B2/en
Ceased legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
AU2009260912A 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds Ceased AU2009260912B2 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG200804637-7A SG157973A1 (en) 2008-06-18 2008-06-18 Method for growing monocrystalline diamonds
SG200804637-7 2008-06-18
PCT/SG2009/000218 WO2009154577A1 (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Publications (2)

Publication Number Publication Date
AU2009260912A1 AU2009260912A1 (en) 2009-12-23
AU2009260912B2 true AU2009260912B2 (en) 2014-02-13

Family

ID=41434313

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2009260912A Ceased AU2009260912B2 (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Country Status (10)

Country Link
US (1) US8992877B2 (https=)
EP (1) EP2262920B1 (https=)
JP (1) JP2011524847A (https=)
AU (1) AU2009260912B2 (https=)
EA (1) EA201001601A1 (https=)
IL (1) IL208829A0 (https=)
MY (1) MY173452A (https=)
NZ (1) NZ588375A (https=)
SG (1) SG157973A1 (https=)
WO (1) WO2009154577A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2373963B1 (en) 2008-12-29 2023-03-01 KAZ Europe SA Probe cover with matching feature for a medical thermometer
WO2010124625A1 (zh) * 2009-04-28 2010-11-04 Chu Xi 生产大颗粒金刚石的方法和设备
JP2011219285A (ja) * 2010-04-06 2011-11-04 Kobe Steel Ltd ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
CN103294439B (zh) * 2013-06-28 2016-03-02 华为技术有限公司 一种图像更新方法、系统及装置
RU2702574C2 (ru) * 2014-05-28 2019-10-08 ЮНИТ СЕЛЛ ДАЙМОНД ЭлЭлСи Способ синтеза алмаза
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
TW201641420A (zh) * 2015-03-09 2016-12-01 二A科技有限公司 單晶鑽石及其成長方法
CN107305185A (zh) * 2016-04-25 2017-10-31 潘栋雄 利用拉曼在三阶光谱的特征峰区分天然与合成钻石的方法
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN114318529B (zh) * 2021-11-26 2023-12-12 航天科工(长沙)新材料研究院有限公司 一种金刚石及其合成工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3374866B2 (ja) * 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
CA2548449C (en) * 2003-12-12 2014-06-03 Element Six Limited Method of incorporating a mark in cvd diamond
US7883684B2 (en) * 2005-05-25 2011-02-08 Carnegie Institution Of Washington Colorless single-crystal CVD diamond at rapid growth rate
KR101307032B1 (ko) * 2005-06-22 2013-09-11 엘리멘트 식스 리미티드 고등급의 색을 갖는 다이아몬드 층
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Also Published As

Publication number Publication date
AU2009260912A1 (en) 2009-12-23
IL208829A0 (en) 2011-01-31
MY173452A (en) 2020-01-25
NZ588375A (en) 2012-08-31
EP2262920B1 (en) 2016-10-19
WO2009154577A1 (en) 2009-12-23
JP2011524847A (ja) 2011-09-08
US8992877B2 (en) 2015-03-31
SG157973A1 (en) 2010-01-29
EP2262920A1 (en) 2010-12-22
EP2262920A4 (en) 2014-03-05
US20110014112A1 (en) 2011-01-20
EA201001601A1 (ru) 2011-10-31

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FGA Letters patent sealed or granted (standard patent)
MK14 Patent ceased section 143(a) (annual fees not paid) or expired