EA201001601A1 - Способ выращивания монокристаллических алмазов - Google Patents
Способ выращивания монокристаллических алмазовInfo
- Publication number
- EA201001601A1 EA201001601A1 EA201001601A EA201001601A EA201001601A1 EA 201001601 A1 EA201001601 A1 EA 201001601A1 EA 201001601 A EA201001601 A EA 201001601A EA 201001601 A EA201001601 A EA 201001601A EA 201001601 A1 EA201001601 A1 EA 201001601A1
- Authority
- EA
- Eurasian Patent Office
- Prior art keywords
- diamond
- nitrogen
- containing gas
- cultivating
- mono
- Prior art date
Links
- 239000010432 diamond Substances 0.000 title abstract 6
- 238000000034 method Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 7
- 229910003460 diamond Inorganic materials 0.000 abstract 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 2
- 229910052799 carbon Inorganic materials 0.000 abstract 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 abstract 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 abstract 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- 238000007740 vapor deposition Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/04—Diamond
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SG200804637-7A SG157973A1 (en) | 2008-06-18 | 2008-06-18 | Method for growing monocrystalline diamonds |
| PCT/SG2009/000218 WO2009154577A1 (en) | 2008-06-18 | 2009-06-18 | Method for growing monocrystalline diamonds |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| EA201001601A1 true EA201001601A1 (ru) | 2011-10-31 |
Family
ID=41434313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| EA201001601A EA201001601A1 (ru) | 2008-06-18 | 2009-06-18 | Способ выращивания монокристаллических алмазов |
Country Status (10)
| Country | Link |
|---|---|
| US (1) | US8992877B2 (https=) |
| EP (1) | EP2262920B1 (https=) |
| JP (1) | JP2011524847A (https=) |
| AU (1) | AU2009260912B2 (https=) |
| EA (1) | EA201001601A1 (https=) |
| IL (1) | IL208829A0 (https=) |
| MY (1) | MY173452A (https=) |
| NZ (1) | NZ588375A (https=) |
| SG (1) | SG157973A1 (https=) |
| WO (1) | WO2009154577A1 (https=) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5431500B2 (ja) | 2008-12-29 | 2014-03-05 | カズ ヨーロッパ エスエー | マッチング機構を有する医療用温度計用プローブカバー |
| EP2431327A4 (en) * | 2009-04-28 | 2014-04-30 | Xi Chu | METHOD AND APPARATUS FOR MANUFACTURING DIAMOND IN THE FORM OF LARGE PARTICLES |
| JP2011219285A (ja) * | 2010-04-06 | 2011-11-04 | Kobe Steel Ltd | ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材 |
| US9783885B2 (en) | 2010-08-11 | 2017-10-10 | Unit Cell Diamond Llc | Methods for producing diamond mass and apparatus therefor |
| US10258959B2 (en) | 2010-08-11 | 2019-04-16 | Unit Cell Diamond Llc | Methods of producing heterodiamond and apparatus therefor |
| SG179318A1 (en) | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
| CN103294439B (zh) * | 2013-06-28 | 2016-03-02 | 华为技术有限公司 | 一种图像更新方法、系统及装置 |
| CA2953990C (en) * | 2014-05-28 | 2019-03-05 | Unit Cell Diamond Llc | Diamond unit cell and diamond mass by combinatorial synthesis |
| SG10201505413VA (en) | 2015-01-14 | 2016-08-30 | Iia Technologies Pte Ltd | Electronic device grade single crystal diamonds and method of producing the same |
| TW201641420A (zh) * | 2015-03-09 | 2016-12-01 | 二A科技有限公司 | 單晶鑽石及其成長方法 |
| CN107305185A (zh) * | 2016-04-25 | 2017-10-31 | 潘栋雄 | 利用拉曼在三阶光谱的特征峰区分天然与合成钻石的方法 |
| TWI706061B (zh) * | 2017-04-26 | 2020-10-01 | 新加坡商二A 科技有限公司 | 大單晶鑽石及其生產方法 |
| US11469077B2 (en) | 2018-04-24 | 2022-10-11 | FD3M, Inc. | Microwave plasma chemical vapor deposition device and application thereof |
| GB201904435D0 (en) | 2019-03-29 | 2019-05-15 | Element Six Tech Ltd | Single crystal synthetic diamond material |
| CN114318529B (zh) * | 2021-11-26 | 2023-12-12 | 航天科工(长沙)新材料研究院有限公司 | 一种金刚石及其合成工艺 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR900008505B1 (ko) * | 1987-02-24 | 1990-11-24 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | 탄소 석출을 위한 마이크로파 강화 cvd 방법 |
| US5443032A (en) * | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
| JP3374866B2 (ja) * | 1993-08-30 | 2003-02-10 | 住友電気工業株式会社 | 半導体ダイヤモンド及びその形成方法 |
| JP3484749B2 (ja) * | 1994-04-04 | 2004-01-06 | 住友電気工業株式会社 | ダイヤモンドの合成法 |
| US6582513B1 (en) * | 1998-05-15 | 2003-06-24 | Apollo Diamond, Inc. | System and method for producing synthetic diamond |
| GB0227261D0 (en) * | 2002-11-21 | 2002-12-31 | Element Six Ltd | Optical quality diamond material |
| WO2005061400A1 (en) * | 2003-12-12 | 2005-07-07 | Element Six Limited | Method of incorporating a mark in cvd diamond |
| KR20080044206A (ko) * | 2005-05-25 | 2008-05-20 | 카네기 인스티튜션 오브 워싱턴 | 신속한 성장 속도의 무색 단결정 ｃｖｄ 다이아몬드 |
| AU2006260656A1 (en) * | 2005-06-22 | 2006-12-28 | Element Six Limited | High colour diamond layer |
| SG179318A1 (en) * | 2010-09-27 | 2012-04-27 | Gemesis Company S Pte Ltd | Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
-
2008
- 2008-06-18 SG SG200804637-7A patent/SG157973A1/en unknown
-
2009
- 2009-06-18 JP JP2011514548A patent/JP2011524847A/ja active Pending
- 2009-06-18 AU AU2009260912A patent/AU2009260912B2/en not_active Ceased
- 2009-06-18 MY MYPI2010004766A patent/MY173452A/en unknown
- 2009-06-18 NZ NZ588375A patent/NZ588375A/xx not_active IP Right Cessation
- 2009-06-18 US US12/933,059 patent/US8992877B2/en active Active
- 2009-06-18 EA EA201001601A patent/EA201001601A1/ru unknown
- 2009-06-18 EP EP09766960.0A patent/EP2262920B1/en not_active Not-in-force
- 2009-06-18 WO PCT/SG2009/000218 patent/WO2009154577A1/en not_active Ceased
-
2010
- 2010-10-20 IL IL208829A patent/IL208829A0/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| EP2262920B1 (en) | 2016-10-19 |
| WO2009154577A1 (en) | 2009-12-23 |
| AU2009260912B2 (en) | 2014-02-13 |
| IL208829A0 (en) | 2011-01-31 |
| EP2262920A1 (en) | 2010-12-22 |
| MY173452A (en) | 2020-01-25 |
| SG157973A1 (en) | 2010-01-29 |
| JP2011524847A (ja) | 2011-09-08 |
| AU2009260912A1 (en) | 2009-12-23 |
| EP2262920A4 (en) | 2014-03-05 |
| NZ588375A (en) | 2012-08-31 |
| US8992877B2 (en) | 2015-03-31 |
| US20110014112A1 (en) | 2011-01-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EA201001601A1 (ru) | Способ выращивания монокристаллических алмазов | |
| JP2011524847A5 (https=) | ||
| MY160769A (en) | Synthetic cvd diamond | |
| NZ609575A (en) | Method of producing white colour mono-crystalline diamonds | |
| TW200741041A (en) | Colorless single-crystal CVD diamond at rapid growth rate | |
| MX2010014197A (es) | Métodos para aislar dióxido de carbono en alcoholes por medio de gasificación y fermentación. | |
| TW200636826A (en) | Selective epitaxy process with alternating gas supply | |
| EP2376681A4 (en) | GENERATION OF A CRYSTAL DIAMOND BY CVD WITH FAST GROWTH RATE | |
| WO2013036376A3 (en) | Methods for the epitaxial growth of silicon carbide | |
| DE602004024800D1 (de) | Züchten von ultrahochreinen siliciumcarbidkristallen in wasserstoffhaltiger umgebung | |
| DE502006008382D1 (de) | Reaktor und verfahren zur herstellung von silizium | |
| MY168654A (en) | Method for the production of cellulases by a filamentous fungus adapted to a fermenter having a low volumetric oxygen transfer coefficient kla | |
| WO2004048257A3 (en) | Method for forming carbon nanotubes | |
| WO2010060630A3 (de) | Verfahren und vorrichtung zur herstellung von reinstsilzium | |
| WO2010062419A3 (en) | Diamond bodies grown on sic substrates and associated methods | |
| ATE541963T1 (de) | Verfahren zur herstellung von gan- oder algan- kristallen | |
| TW200833886A (en) | Method for manufacture of III-V family chemical compound semiconductor | |
| WO2009008422A1 (ja) | 混合ガスの製造方法および製造装置、ならびにエポキシ化合物の製造装置および製造方法 | |
| 吳坤哲 et al. | Biohydrogen production using suspended and immobilized mixed microflora | |
| EA200702052A1 (ru) | Способ одновременного получения бензола и этилена конверсией ацетилена | |
| TW200721268A (en) | Process and equipment for producing aln semiconductor | |
| CN109502575A (zh) | 一种化学气相淀积制备大面积石墨烯的方法 | |
| Deng et al. | Relationship between the growth rate and Al incorporation of AlGaN by metalorganic chemical vapor deposition | |
| TW200702478A (en) | Growth of multi-walled carbon nanotubes by thermal chemical vapor deposition using CH4-CO2 gas mixture | |
| Lever et al. | CO 2 reduction independent of hydrogen drives methanogenesis in five temperate lakes |