JP2011524847A - 単結晶ダイヤモンドの成長方法 - Google Patents

単結晶ダイヤモンドの成長方法 Download PDF

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Publication number
JP2011524847A
JP2011524847A JP2011514548A JP2011514548A JP2011524847A JP 2011524847 A JP2011524847 A JP 2011524847A JP 2011514548 A JP2011514548 A JP 2011514548A JP 2011514548 A JP2011514548 A JP 2011514548A JP 2011524847 A JP2011524847 A JP 2011524847A
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Japan
Prior art keywords
nitrogen
diamond
single crystal
crystal diamond
gas
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Pending
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JP2011514548A
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English (en)
Japanese (ja)
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JP2011524847A5 (https=
Inventor
デヴィ シャンカー ミスラ、
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IIA Technologies Pte Ltd
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IIA Technologies Pte Ltd
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Publication date
Application filed by IIA Technologies Pte Ltd filed Critical IIA Technologies Pte Ltd
Publication of JP2011524847A publication Critical patent/JP2011524847A/ja
Publication of JP2011524847A5 publication Critical patent/JP2011524847A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
JP2011514548A 2008-06-18 2009-06-18 単結晶ダイヤモンドの成長方法 Pending JP2011524847A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SG200804637-7A SG157973A1 (en) 2008-06-18 2008-06-18 Method for growing monocrystalline diamonds
SG200804637-7 2008-06-18
PCT/SG2009/000218 WO2009154577A1 (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Publications (2)

Publication Number Publication Date
JP2011524847A true JP2011524847A (ja) 2011-09-08
JP2011524847A5 JP2011524847A5 (https=) 2014-11-13

Family

ID=41434313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2011514548A Pending JP2011524847A (ja) 2008-06-18 2009-06-18 単結晶ダイヤモンドの成長方法

Country Status (10)

Country Link
US (1) US8992877B2 (https=)
EP (1) EP2262920B1 (https=)
JP (1) JP2011524847A (https=)
AU (1) AU2009260912B2 (https=)
EA (1) EA201001601A1 (https=)
IL (1) IL208829A0 (https=)
MY (1) MY173452A (https=)
NZ (1) NZ588375A (https=)
SG (1) SG157973A1 (https=)
WO (1) WO2009154577A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017523120A (ja) * 2014-05-28 2017-08-17 ユニット セル ダイヤモンド エルエルシーＵｎｉｔ Ｃｅｌｌ Ｄｉａｍｏｎｄ Ｌｌｃ コンビナトリアル合成によるダイヤモンド単位格子およびダイヤモンド塊

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2373963B1 (en) 2008-12-29 2023-03-01 KAZ Europe SA Probe cover with matching feature for a medical thermometer
WO2010124625A1 (zh) * 2009-04-28 2010-11-04 Chu Xi 生产大颗粒金刚石的方法和设备
JP2011219285A (ja) * 2010-04-06 2011-11-04 Kobe Steel Ltd ダイヤモンドフレークの製造方法およびダイヤモンドフレークを含有した伝熱性強化材
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
CN103294439B (zh) * 2013-06-28 2016-03-02 华为技术有限公司 一种图像更新方法、系统及装置
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
TW201641420A (zh) * 2015-03-09 2016-12-01 二A科技有限公司 單晶鑽石及其成長方法
CN107305185A (zh) * 2016-04-25 2017-10-31 潘栋雄 利用拉曼在三阶光谱的特征峰区分天然与合成钻石的方法
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN114318529B (zh) * 2021-11-26 2023-12-12 航天科工(长沙)新材料研究院有限公司 一种金刚石及其合成工艺

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
WO2006136929A2 (en) * 2005-06-22 2006-12-28 Element Six Limited High colour diamond layer

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008505B1 (ko) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 탄소 석출을 위한 마이크로파 강화 cvd 방법
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3374866B2 (ja) * 1993-08-30 2003-02-10 住友電気工業株式会社 半導体ダイヤモンド及びその形成方法
JP3484749B2 (ja) * 1994-04-04 2004-01-06 住友電気工業株式会社 ダイヤモンドの合成法
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
US7883684B2 (en) * 2005-05-25 2011-02-08 Carnegie Institution Of Washington Colorless single-crystal CVD diamond at rapid growth rate
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
WO2006136929A2 (en) * 2005-06-22 2006-12-28 Element Six Limited High colour diamond layer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017523120A (ja) * 2014-05-28 2017-08-17 ユニット セル ダイヤモンド エルエルシーＵｎｉｔ Ｃｅｌｌ Ｄｉａｍｏｎｄ Ｌｌｃ コンビナトリアル合成によるダイヤモンド単位格子およびダイヤモンド塊

Also Published As

Publication number Publication date
AU2009260912A1 (en) 2009-12-23
IL208829A0 (en) 2011-01-31
AU2009260912B2 (en) 2014-02-13
MY173452A (en) 2020-01-25
NZ588375A (en) 2012-08-31
EP2262920B1 (en) 2016-10-19
WO2009154577A1 (en) 2009-12-23
US8992877B2 (en) 2015-03-31
SG157973A1 (en) 2010-01-29
EP2262920A1 (en) 2010-12-22
EP2262920A4 (en) 2014-03-05
US20110014112A1 (en) 2011-01-20
EA201001601A1 (ru) 2011-10-31

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