AU2002365979A1 - Method for polishing a substrate surface - Google Patents

Method for polishing a substrate surface

Info

Publication number
AU2002365979A1
AU2002365979A1 AU2002365979A AU2002365979A AU2002365979A1 AU 2002365979 A1 AU2002365979 A1 AU 2002365979A1 AU 2002365979 A AU2002365979 A AU 2002365979A AU 2002365979 A AU2002365979 A AU 2002365979A AU 2002365979 A1 AU2002365979 A1 AU 2002365979A1
Authority
AU
Australia
Prior art keywords
substrate
polishing
substrate surface
cmp
improved
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002365979A
Other languages
English (en)
Other versions
AU2002365979A8 (en
Inventor
Javier Martinez Lopez
Kenneth Morgan
Carlos J. Rojo
Leo J. Schowalter
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rensselaer Polytechnic Institute
Original Assignee
Rensselaer Polytechnic Institute
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rensselaer Polytechnic Institute filed Critical Rensselaer Polytechnic Institute
Publication of AU2002365979A8 publication Critical patent/AU2002365979A8/xx
Publication of AU2002365979A1 publication Critical patent/AU2002365979A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H01L21/0201—Specific process step
    • H01L21/02024—Mirror polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/0056—Control means for lapping machines or devices taking regard of the pH-value of lapping agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
AU2002365979A 2001-11-20 2002-11-20 Method for polishing a substrate surface Abandoned AU2002365979A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US33186801P 2001-11-20 2001-11-20
US60/331,868 2001-11-20
PCT/US2002/037135 WO2003043780A2 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Publications (2)

Publication Number Publication Date
AU2002365979A8 AU2002365979A8 (en) 2003-06-10
AU2002365979A1 true AU2002365979A1 (en) 2003-06-10

Family

ID=23295726

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002365979A Abandoned AU2002365979A1 (en) 2001-11-20 2002-11-20 Method for polishing a substrate surface

Country Status (8)

Country Link
US (2) US7037838B2 (cg-RX-API-DMAC7.html)
EP (1) EP1446263B1 (cg-RX-API-DMAC7.html)
JP (2) JP2005510072A (cg-RX-API-DMAC7.html)
AT (1) ATE418420T1 (cg-RX-API-DMAC7.html)
AU (1) AU2002365979A1 (cg-RX-API-DMAC7.html)
CA (1) CA2467806C (cg-RX-API-DMAC7.html)
DE (1) DE60230538D1 (cg-RX-API-DMAC7.html)
WO (1) WO2003043780A2 (cg-RX-API-DMAC7.html)

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US8025808B2 (en) * 2003-04-25 2011-09-27 Saint-Gobain Ceramics & Plastics, Inc. Methods for machine ceramics
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JP4792802B2 (ja) * 2005-04-26 2011-10-12 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の表面処理方法
WO2006124067A1 (en) * 2005-05-11 2006-11-23 North Carolina State University Controlled polarity group iii-nitride films and methods of preparing such films
US20060288929A1 (en) * 2005-06-10 2006-12-28 Crystal Is, Inc. Polar surface preparation of nitride substrates
US7670902B2 (en) * 2005-07-26 2010-03-02 Semiconductor Manufacturing International (Shanghai) Corporation Method and structure for landing polysilicon contact
RU2320466C2 (ru) * 2005-11-23 2008-03-27 Ооо "Нитридные Кристаллы" Способ полирования поверхности подложки
CN101415864B (zh) * 2005-11-28 2014-01-08 晶体公司 具有减少缺陷的大的氮化铝晶体及其制造方法
US7641735B2 (en) * 2005-12-02 2010-01-05 Crystal Is, Inc. Doped aluminum nitride crystals and methods of making them
EP2918708B1 (en) 2006-03-30 2019-10-30 Crystal Is, Inc. Method for annealing of aluminium nitride wafer
US9034103B2 (en) * 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
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TWI386468B (zh) * 2006-12-20 2013-02-21 Saint Gobain Ceramics 加工無機非金屬工件之方法
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
CN101652832B (zh) * 2007-01-26 2011-06-22 晶体公司 厚的赝晶氮化物外延层
US8088220B2 (en) * 2007-05-24 2012-01-03 Crystal Is, Inc. Deep-eutectic melt growth of nitride crystals
US8210904B2 (en) * 2008-04-29 2012-07-03 International Business Machines Corporation Slurryless mechanical planarization for substrate reclamation
US7915178B2 (en) 2008-07-30 2011-03-29 North Carolina State University Passivation of aluminum nitride substrates
US20100314551A1 (en) * 2009-06-11 2010-12-16 Bettles Timothy J In-line Fluid Treatment by UV Radiation
EP2588651B1 (en) 2010-06-30 2020-01-08 Crystal Is, Inc. Growth of large aluminum nitride single crystals with thermal-gradient control
WO2012012384A1 (en) 2010-07-20 2012-01-26 Hexatech, Inc. Polycrystalline aluminum nitride material and method of production thereof
US9299594B2 (en) 2010-07-27 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Substrate bonding system and method of modifying the same
JP5319628B2 (ja) * 2010-08-26 2013-10-16 シャープ株式会社 窒化物半導体素子および半導体光学装置
JP2011049610A (ja) * 2010-12-10 2011-03-10 Sumitomo Electric Ind Ltd ＡｌＮ結晶の表面処理方法、ＡｌＮ結晶基板、エピタキシャル層付ＡｌＮ結晶基板および半導体デバイス
US8766274B2 (en) 2010-12-14 2014-07-01 Hexatech, Inc. Thermal expansion engineering for polycrystalline aluminum nitride sintered bodies
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN108511567A (zh) 2013-03-15 2018-09-07 晶体公司 与赝配电子和光电器件的平面接触
WO2016039116A1 (ja) * 2014-09-11 2016-03-17 株式会社トクヤマ 窒化アルミニウム単結晶基板の洗浄方法および積層体
WO2016125404A1 (ja) 2015-02-02 2016-08-11 富士電機株式会社 炭化ケイ素半導体装置の製造方法及び炭化ケイ素半導体装置
US10249786B2 (en) * 2016-11-29 2019-04-02 Palo Alto Research Center Incorporated Thin film and substrate-removed group III-nitride based devices and method
WO2019094742A1 (en) 2017-11-10 2019-05-16 Crystal Is, Inc. Large, uv-transparent aluminum nitride single crystals and methods of forming them
US20210047749A1 (en) 2019-08-15 2021-02-18 Robert T. Bondokov Diameter expansion of aluminum nitride crystals during growth by physical vapor transport
JP2021104547A (ja) * 2019-12-26 2021-07-26 ニッタ・デュポン株式会社 研磨スラリー
US20230287242A1 (en) * 2020-07-29 2023-09-14 Versum Materials Us, Llc Pad-in-a-bottle (pib) technology for copper and through-silicon via (tsv) chemical-mechanical planarization (cmp)
WO2023277103A1 (ja) * 2021-06-30 2023-01-05 京セラ株式会社 周期表第１３族元素窒化物結晶基板の製造方法
JP2024528866A (ja) * 2021-07-23 2024-08-01 バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー 銅バリアスラリーのためのパッドインボトル（ｐｉｂ）技術
KR20240101835A (ko) * 2021-11-10 2024-07-02 버슘머트리얼즈 유에스, 엘엘씨 비용 효율적인 비-다공성 고체 연마 패드를 사용하는 패드-인-어-보틀 화학적 기계적 평탄화 연마

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Also Published As

Publication number Publication date
US20040033690A1 (en) 2004-02-19
US20070289946A1 (en) 2007-12-20
EP1446263B1 (en) 2008-12-24
AU2002365979A8 (en) 2003-06-10
US7037838B2 (en) 2006-05-02
HK1068840A1 (en) 2005-05-06
JP2005510072A (ja) 2005-04-14
JP5628224B2 (ja) 2014-11-19
JP2012134515A (ja) 2012-07-12
EP1446263A2 (en) 2004-08-18
WO2003043780A2 (en) 2003-05-30
WO2003043780B1 (en) 2003-10-30
ATE418420T1 (de) 2009-01-15
CA2467806C (en) 2011-04-19
CA2467806A1 (en) 2003-05-30
WO2003043780A3 (en) 2003-08-28
DE60230538D1 (de) 2009-02-05
US7323414B2 (en) 2008-01-29

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase