AU2002365054A1 - Method for fabricating a semiconductor device having different metal silicide portions - Google Patents

Method for fabricating a semiconductor device having different metal silicide portions

Info

Publication number
AU2002365054A1
AU2002365054A1 AU2002365054A AU2002365054A AU2002365054A1 AU 2002365054 A1 AU2002365054 A1 AU 2002365054A1 AU 2002365054 A AU2002365054 A AU 2002365054A AU 2002365054 A AU2002365054 A AU 2002365054A AU 2002365054 A1 AU2002365054 A1 AU 2002365054A1
Authority
AU
Australia
Prior art keywords
fabricating
semiconductor device
metal silicide
different metal
silicide portions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002365054A
Other languages
English (en)
Inventor
Manfred Horstmann
Rolf Stephan
Karsten Wieczorek
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Micro Devices Inc
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10208728A external-priority patent/DE10208728B4/de
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Publication of AU2002365054A1 publication Critical patent/AU2002365054A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823437—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/823443—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/665—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using self aligned silicidation, i.e. salicide

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AU2002365054A 2002-02-28 2002-12-20 Method for fabricating a semiconductor device having different metal silicide portions Abandoned AU2002365054A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE10208728A DE10208728B4 (de) 2002-02-28 2002-02-28 Ein Verfahren zur Herstellung eines Halbleiterelements mit unterschiedlichen Metallsilizidbereichen
DE10208728.8 2002-02-28
US10/260,926 US7217657B2 (en) 2002-02-28 2002-09-30 Semiconductor device having different metal silicide portions and method for fabricating the semiconductor device
US10/260,926 2002-09-30
PCT/US2002/041089 WO2003079424A1 (en) 2002-02-28 2002-12-20 Method for fabricating a semiconductor device having different metal silicide portions

Publications (1)

Publication Number Publication Date
AU2002365054A1 true AU2002365054A1 (en) 2003-09-29

Family

ID=28042824

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002365054A Abandoned AU2002365054A1 (en) 2002-02-28 2002-12-20 Method for fabricating a semiconductor device having different metal silicide portions

Country Status (6)

Country Link
EP (1) EP1479100A1 (ja)
JP (1) JP2005520341A (ja)
CN (1) CN100481333C (ja)
AU (1) AU2002365054A1 (ja)
TW (1) TWI277174B (ja)
WO (1) WO2003079424A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7405112B2 (en) 2000-08-25 2008-07-29 Advanced Micro Devices, Inc. Low contact resistance CMOS circuits and methods for their fabrication
JP4011024B2 (ja) 2004-01-30 2007-11-21 株式会社ルネサステクノロジ 半導体装置およびその製造方法
KR101226653B1 (ko) 2006-06-28 2013-01-25 엘지디스플레이 주식회사 액정표시장치용 어레이기판과 그 제조방법
JP5500784B2 (ja) * 2008-05-12 2014-05-21 信越半導体株式会社 多層シリコン半導体ウェーハ及びその作製方法
CN102571135B (zh) * 2012-02-15 2014-05-14 京信通信系统（中国）有限公司 射频半集成应用装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4824544A (en) * 1987-10-29 1989-04-25 International Business Machines Corporation Large area cathode lift-off sputter deposition device
JPH04188868A (ja) * 1990-11-22 1992-07-07 Seiko Epson Corp 半導体装置の製造方法
JPH04349660A (ja) * 1991-05-28 1992-12-04 Toshiba Corp 半導体装置及び製造方法
US5352631A (en) * 1992-12-16 1994-10-04 Motorola, Inc. Method for forming a transistor having silicided regions
JPH07235606A (ja) * 1994-02-22 1995-09-05 Mitsubishi Electric Corp 相補型半導体装置及びその製造方法
US6020242A (en) * 1997-09-04 2000-02-01 Lsi Logic Corporation Effective silicide blocking
US6133130A (en) * 1998-10-28 2000-10-17 United Microelectronics Corp. Method for fabricating an embedded dynamic random access memory using self-aligned silicide technology
US6040606A (en) * 1998-11-04 2000-03-21 National Semiconductor Corporation Integrated circuit structure with dual thickness cobalt silicide layers and method for its manufacture

Also Published As

Publication number Publication date
EP1479100A1 (en) 2004-11-24
CN100481333C (zh) 2009-04-22
CN1623221A (zh) 2005-06-01
JP2005520341A (ja) 2005-07-07
TW200303603A (en) 2003-09-01
TWI277174B (en) 2007-03-21
WO2003079424A1 (en) 2003-09-25

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Legal Events

Date Code Title Description
MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase