AU2002229010A1 - Photoacid generators in photoresist compositions for microlithography - Google Patents
Photoacid generators in photoresist compositions for microlithographyInfo
- Publication number
- AU2002229010A1 AU2002229010A1 AU2002229010A AU2901002A AU2002229010A1 AU 2002229010 A1 AU2002229010 A1 AU 2002229010A1 AU 2002229010 A AU2002229010 A AU 2002229010A AU 2901002 A AU2901002 A AU 2901002A AU 2002229010 A1 AU2002229010 A1 AU 2002229010A1
- Authority
- AU
- Australia
- Prior art keywords
- microlithography
- photoacid generators
- photoresist compositions
- photoresist
- compositions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24739300P | 2000-11-09 | 2000-11-09 | |
US60/247,393 | 2000-11-09 | ||
PCT/US2001/048006 WO2002039186A2 (en) | 2000-11-09 | 2001-10-31 | Photoacid generators in photoresist compositions for microlithography |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2002229010A1 true AU2002229010A1 (en) | 2002-05-21 |
Family
ID=22934752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2002229010A Abandoned AU2002229010A1 (en) | 2000-11-09 | 2001-10-31 | Photoacid generators in photoresist compositions for microlithography |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1332406A2 (ko) |
JP (1) | JP2004537740A (ko) |
KR (1) | KR20040004429A (ko) |
CN (1) | CN1575438A (ko) |
AU (1) | AU2002229010A1 (ko) |
TW (1) | TW581935B (ko) |
WO (1) | WO2002039186A2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521168B2 (en) | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
JP4701231B2 (ja) * | 2002-02-13 | 2011-06-15 | 富士フイルム株式会社 | 電子線、euv又はx線用ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
US20040265733A1 (en) * | 2003-06-30 | 2004-12-30 | Houlihan Francis M. | Photoacid generators |
JP4411042B2 (ja) | 2003-09-19 | 2010-02-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US20050148679A1 (en) * | 2003-12-29 | 2005-07-07 | Chingfan Chiu | Aryl sulfonium salt, polymerizable composition and polymerization method of the same |
KR100574495B1 (ko) | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
JP2010134126A (ja) * | 2008-12-03 | 2010-06-17 | Jsr Corp | 感放射線性組樹脂組成物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2839172B2 (ja) * | 1992-10-29 | 1998-12-16 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 非金属感光性酸生成剤を含む化学的に増幅されたフォトレジスト |
US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
WO2000017712A1 (en) * | 1998-09-23 | 2000-03-30 | E.I. Du Pont De Nemours And Company | Photoresists, polymers and processes for microlithography |
AU4678100A (en) * | 1999-05-04 | 2000-11-17 | E.I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
JP2001255647A (ja) * | 2000-03-13 | 2001-09-21 | Daikin Ind Ltd | エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤 |
-
2001
- 2001-10-31 KR KR10-2003-7006106A patent/KR20040004429A/ko not_active Application Discontinuation
- 2001-10-31 WO PCT/US2001/048006 patent/WO2002039186A2/en not_active Application Discontinuation
- 2001-10-31 EP EP01990140A patent/EP1332406A2/en not_active Withdrawn
- 2001-10-31 CN CNA018186416A patent/CN1575438A/zh active Pending
- 2001-10-31 AU AU2002229010A patent/AU2002229010A1/en not_active Abandoned
- 2001-10-31 JP JP2002541449A patent/JP2004537740A/ja active Pending
- 2001-11-09 TW TW090127881A patent/TW581935B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002039186A2 (en) | 2002-05-16 |
CN1575438A (zh) | 2005-02-02 |
TW581935B (en) | 2004-04-01 |
EP1332406A2 (en) | 2003-08-06 |
KR20040004429A (ko) | 2004-01-13 |
JP2004537740A (ja) | 2004-12-16 |
WO2002039186A3 (en) | 2002-11-21 |
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