TW581935B - Photoacid generators in photoresist compositions for microlithography - Google Patents

Photoacid generators in photoresist compositions for microlithography Download PDF

Info

Publication number
TW581935B
TW581935B TW090127881A TW90127881A TW581935B TW 581935 B TW581935 B TW 581935B TW 090127881 A TW090127881 A TW 090127881A TW 90127881 A TW90127881 A TW 90127881A TW 581935 B TW581935 B TW 581935B
Authority
TW
Taiwan
Prior art keywords
salt
group
integer
photoresist composition
item
Prior art date
Application number
TW090127881A
Other languages
English (en)
Chinese (zh)
Inventor
Viacheslav Alexandrovic Petrov
Frank L Schadt Iii
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Application granted granted Critical
Publication of TW581935B publication Critical patent/TW581935B/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0046Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
TW090127881A 2000-11-09 2001-11-09 Photoacid generators in photoresist compositions for microlithography TW581935B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US24739300P 2000-11-09 2000-11-09

Publications (1)

Publication Number Publication Date
TW581935B true TW581935B (en) 2004-04-01

Family

ID=22934752

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090127881A TW581935B (en) 2000-11-09 2001-11-09 Photoacid generators in photoresist compositions for microlithography

Country Status (7)

Country Link
EP (1) EP1332406A2 (ko)
JP (1) JP2004537740A (ko)
KR (1) KR20040004429A (ko)
CN (1) CN1575438A (ko)
AU (1) AU2002229010A1 (ko)
TW (1) TW581935B (ko)
WO (1) WO2002039186A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4701231B2 (ja) * 2002-02-13 2011-06-15 富士フイルム株式会社 電子線、euv又はx線用ネガ型レジスト組成物及びそれを用いたパターン形成方法
US20040265733A1 (en) * 2003-06-30 2004-12-30 Houlihan Francis M. Photoacid generators
JP4411042B2 (ja) 2003-09-19 2010-02-10 富士フイルム株式会社 ポジ型レジスト組成物及びそれを用いたパターン形成方法
US20050148679A1 (en) * 2003-12-29 2005-07-07 Chingfan Chiu Aryl sulfonium salt, polymerizable composition and polymerization method of the same
KR100574495B1 (ko) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물
JP2010134126A (ja) * 2008-12-03 2010-06-17 Jsr Corp 感放射線性組樹脂組成物

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0698230A1 (en) * 1992-10-29 1996-02-28 International Business Machines Corporation Chemically amplified photoresist
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
IL141803A0 (en) * 1998-09-23 2002-03-10 Du Pont Photoresists, polymers and processes for microlithography
KR20020012206A (ko) * 1999-05-04 2002-02-15 메리 이. 보울러 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법
JP2001255647A (ja) * 2000-03-13 2001-09-21 Daikin Ind Ltd エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤

Also Published As

Publication number Publication date
WO2002039186A3 (en) 2002-11-21
WO2002039186A2 (en) 2002-05-16
KR20040004429A (ko) 2004-01-13
JP2004537740A (ja) 2004-12-16
AU2002229010A1 (en) 2002-05-21
EP1332406A2 (en) 2003-08-06
CN1575438A (zh) 2005-02-02

Similar Documents

Publication Publication Date Title
JP4663075B2 (ja) フォトレジスト用単量体とその製造方法、フォトレジスト用共重合体とその製造方法及びフォトレジスト組成物
JP4516963B2 (ja) フルオロスルホンアミド含有ポリマーを有するネガ型レジスト組成物およびパターン形成方法
JP5114806B2 (ja) トップコートを用いて深紫外線フォトレジストに像を形成する方法およびそのための材料
JP5961363B2 (ja) ラクトン光酸発生剤、これを含む樹脂およびフォトレジスト
JP2017008068A (ja) 塩基反応性光酸発生剤およびこれを含むフォトレジスト
JP2001172370A (ja) 新規のフォトレジスト単量体、その重合体及びこれを含むフォトレジスト組成物
KR19990044985A (ko) 신규 중합체 및 감광성내식막 조성물
US6235448B1 (en) Photoresist monomers, polymers thereof, and photoresist compositions containing the same
KR20040029976A (ko) 원자외선 리소그래피용 포토레지스트 조성물
TWI311235B (ko)
KR20040029978A (ko) 포토레지스트 조성물에 적합한 중합체
JP2002201232A (ja) フォトレジスト用高分子化合物及びフォトレジスト用樹脂組成物
US20030211417A1 (en) Polymers for photoresist compositions for microlithography
JP2003295444A (ja) アセタール/脂環式ポリマーおよびフォトレジスト組成物
TW200525293A (en) Photoresist composition for deep UV and process thereof
TW581935B (en) Photoacid generators in photoresist compositions for microlithography
JP2004523774A (ja) マイクロリソグラフィー用フォトレジスト組成物における溶解抑制剤
KR100557554B1 (ko) 불소가 치환된 벤질 카르복실레이트 그룹을 포함하는단량체 및 이를 함유한 포토레지스트 중합체
JP3641748B2 (ja) フォトレジスト単量体、フォトレジスト重合体、フォトレジスト重合体の製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、及び半導体素子
JP4386710B2 (ja) ホトレジスト組成物、該ホトレジスト組成物用低分子化合物および高分子化合物
JP3963724B2 (ja) フォトレジスト用高分子化合物の製造方法、及びフォトレジスト用樹脂組成物
JP2003532932A (ja) マイクロリソグラフィのフォトレジスト組成物に用いられるポリマー
JP4261303B2 (ja) 水酸化され、光酸で切断可能な基を有するフォトレジスト
KR100557529B1 (ko) 화학증폭형 포토레지스트 단량체, 그의 중합체 및 이를함유하는 포토레지스트 조성물
KR100641919B1 (ko) 포토레지스트 조성물

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees