TW581935B - Photoacid generators in photoresist compositions for microlithography - Google Patents
Photoacid generators in photoresist compositions for microlithography Download PDFInfo
- Publication number
- TW581935B TW581935B TW090127881A TW90127881A TW581935B TW 581935 B TW581935 B TW 581935B TW 090127881 A TW090127881 A TW 090127881A TW 90127881 A TW90127881 A TW 90127881A TW 581935 B TW581935 B TW 581935B
- Authority
- TW
- Taiwan
- Prior art keywords
- salt
- group
- integer
- photoresist composition
- item
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Materials For Photolithography (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24739300P | 2000-11-09 | 2000-11-09 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW581935B true TW581935B (en) | 2004-04-01 |
Family
ID=22934752
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW090127881A TW581935B (en) | 2000-11-09 | 2001-11-09 | Photoacid generators in photoresist compositions for microlithography |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1332406A2 (ko) |
JP (1) | JP2004537740A (ko) |
KR (1) | KR20040004429A (ko) |
CN (1) | CN1575438A (ko) |
AU (1) | AU2002229010A1 (ko) |
TW (1) | TW581935B (ko) |
WO (1) | WO2002039186A2 (ko) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7521168B2 (en) | 2002-02-13 | 2009-04-21 | Fujifilm Corporation | Resist composition for electron beam, EUV or X-ray |
JP4701231B2 (ja) * | 2002-02-13 | 2011-06-15 | 富士フイルム株式会社 | 電子線、euv又はx線用ネガ型レジスト組成物及びそれを用いたパターン形成方法 |
US20040265733A1 (en) * | 2003-06-30 | 2004-12-30 | Houlihan Francis M. | Photoacid generators |
JP4411042B2 (ja) | 2003-09-19 | 2010-02-10 | 富士フイルム株式会社 | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US20050148679A1 (en) * | 2003-12-29 | 2005-07-07 | Chingfan Chiu | Aryl sulfonium salt, polymerizable composition and polymerization method of the same |
KR100574495B1 (ko) * | 2004-12-15 | 2006-04-27 | 주식회사 하이닉스반도체 | 광산발생제 중합체, 그 제조방법 및 이를 함유하는상부반사방지막 조성물 |
JP2010134126A (ja) * | 2008-12-03 | 2010-06-17 | Jsr Corp | 感放射線性組樹脂組成物 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0698230A1 (en) * | 1992-10-29 | 1996-02-28 | International Business Machines Corporation | Chemically amplified photoresist |
US5863699A (en) * | 1995-10-12 | 1999-01-26 | Kabushiki Kaisha Toshiba | Photo-sensitive composition |
IL141803A0 (en) * | 1998-09-23 | 2002-03-10 | Du Pont | Photoresists, polymers and processes for microlithography |
KR20020012206A (ko) * | 1999-05-04 | 2002-02-15 | 메리 이. 보울러 | 플루오르화 중합체, 포토레지스트 및 마이크로리소그래피방법 |
JP2001255647A (ja) * | 2000-03-13 | 2001-09-21 | Daikin Ind Ltd | エネルギー線照射によりカチオンまたは酸を発生するフルオロアルキルオニウム塩型のカチオンまたは酸発生剤 |
-
2001
- 2001-10-31 JP JP2002541449A patent/JP2004537740A/ja active Pending
- 2001-10-31 KR KR10-2003-7006106A patent/KR20040004429A/ko not_active Application Discontinuation
- 2001-10-31 WO PCT/US2001/048006 patent/WO2002039186A2/en not_active Application Discontinuation
- 2001-10-31 EP EP01990140A patent/EP1332406A2/en not_active Withdrawn
- 2001-10-31 CN CNA018186416A patent/CN1575438A/zh active Pending
- 2001-10-31 AU AU2002229010A patent/AU2002229010A1/en not_active Abandoned
- 2001-11-09 TW TW090127881A patent/TW581935B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002039186A3 (en) | 2002-11-21 |
WO2002039186A2 (en) | 2002-05-16 |
KR20040004429A (ko) | 2004-01-13 |
JP2004537740A (ja) | 2004-12-16 |
AU2002229010A1 (en) | 2002-05-21 |
EP1332406A2 (en) | 2003-08-06 |
CN1575438A (zh) | 2005-02-02 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |