WO2002039186A3 - Photoacid generators in photoresist compositions for microlithography - Google Patents

Photoacid generators in photoresist compositions for microlithography Download PDF

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Publication number
WO2002039186A3
WO2002039186A3 PCT/US2001/048006 US0148006W WO0239186A3 WO 2002039186 A3 WO2002039186 A3 WO 2002039186A3 US 0148006 W US0148006 W US 0148006W WO 0239186 A3 WO0239186 A3 WO 0239186A3
Authority
WO
WIPO (PCT)
Prior art keywords
microlithography
photoacid generators
photoresist compositions
salts
photoactive
Prior art date
Application number
PCT/US2001/048006
Other languages
French (fr)
Other versions
WO2002039186A2 (en
Inventor
Viacheslav Alexandrovic Petrov
Iii Frank L Schadt
Original Assignee
Du Pont
Viacheslav Alexandrovic Petrov
Iii Frank L Schadt
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont, Viacheslav Alexandrovic Petrov, Iii Frank L Schadt filed Critical Du Pont
Priority to US10/398,873 priority Critical patent/US20040106062A1/en
Priority to EP01990140A priority patent/EP1332406A2/en
Priority to KR10-2003-7006106A priority patent/KR20040004429A/en
Priority to JP2002541449A priority patent/JP2004537740A/en
Priority to AU2002229010A priority patent/AU2002229010A1/en
Publication of WO2002039186A2 publication Critical patent/WO2002039186A2/en
Publication of WO2002039186A3 publication Critical patent/WO2002039186A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)

Abstract

A photoresist composition having a polymeric binder; and a photoactive component selected from the group consisting of (1) hydroxamic acid sulfonoxy esters containing a perfluoroalkyl group containing at least five carbon atoms; (2) S-perfluoroalkyldibenzothiophenium salts; and (3) S-perfluoroalkyldiarylsulfonium salts. These photoactive components are compatible with the polymeric binders that are useful for imaging with exposure to light at the relatively shorter wavelengths, such as 157 nm.
PCT/US2001/048006 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography WO2002039186A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
US10/398,873 US20040106062A1 (en) 2001-10-31 2001-10-31 Photoacid generators in photoresist compositions for microlithography
EP01990140A EP1332406A2 (en) 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography
KR10-2003-7006106A KR20040004429A (en) 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography
JP2002541449A JP2004537740A (en) 2000-11-09 2001-10-31 Photoacid generator in photoresist composition for microlithography
AU2002229010A AU2002229010A1 (en) 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US24739300P 2000-11-09 2000-11-09
US60/247,393 2000-11-09

Publications (2)

Publication Number Publication Date
WO2002039186A2 WO2002039186A2 (en) 2002-05-16
WO2002039186A3 true WO2002039186A3 (en) 2002-11-21

Family

ID=22934752

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2001/048006 WO2002039186A2 (en) 2000-11-09 2001-10-31 Photoacid generators in photoresist compositions for microlithography

Country Status (7)

Country Link
EP (1) EP1332406A2 (en)
JP (1) JP2004537740A (en)
KR (1) KR20040004429A (en)
CN (1) CN1575438A (en)
AU (1) AU2002229010A1 (en)
TW (1) TW581935B (en)
WO (1) WO2002039186A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
JP4701231B2 (en) * 2002-02-13 2011-06-15 富士フイルム株式会社 Negative resist composition for electron beam, EUV or X-ray and pattern forming method using the same
US20040265733A1 (en) * 2003-06-30 2004-12-30 Houlihan Francis M. Photoacid generators
JP4411042B2 (en) 2003-09-19 2010-02-10 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
US20050148679A1 (en) * 2003-12-29 2005-07-07 Chingfan Chiu Aryl sulfonium salt, polymerizable composition and polymerization method of the same
KR100574495B1 (en) * 2004-12-15 2006-04-27 주식회사 하이닉스반도체 Photoacid generator polymer, its preparation method and top anti-reflective coating composition comprising the same
JP2010134126A (en) * 2008-12-03 2010-06-17 Jsr Corp Radiation-sensitive resin composition

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994010608A1 (en) * 1992-10-29 1994-05-11 International Business Machines Corporation Chemically amplified photoresist
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
WO2001068575A1 (en) * 2000-03-13 2001-09-20 Daikin Industries, Ltd. Fluoroalkylonium salt type cation or acid generator generating cation or acid upon irradiation with energy ray

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1994010608A1 (en) * 1992-10-29 1994-05-11 International Business Machines Corporation Chemically amplified photoresist
US5863699A (en) * 1995-10-12 1999-01-26 Kabushiki Kaisha Toshiba Photo-sensitive composition
WO2000017712A1 (en) * 1998-09-23 2000-03-30 E.I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
WO2000067072A1 (en) * 1999-05-04 2000-11-09 E.I. Du Pont De Nemours And Company Fluorinated polymers, photoresists and processes for microlithography
WO2001068575A1 (en) * 2000-03-13 2001-09-20 Daikin Industries, Ltd. Fluoroalkylonium salt type cation or acid generator generating cation or acid upon irradiation with energy ray

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
ANON.: "N-(Pentafluorobenzenesulfonoxy)phthalimide - synthesis and characterization as a nonionic photoacidgenerator", RESEARCH DISCLOSURE., vol. 337, KENNETH MASON PUBLICATIONS, HAMPSHIRE., GB, pages 336, XP000309803, ISSN: 0374-4353 *

Also Published As

Publication number Publication date
TW581935B (en) 2004-04-01
EP1332406A2 (en) 2003-08-06
KR20040004429A (en) 2004-01-13
CN1575438A (en) 2005-02-02
JP2004537740A (en) 2004-12-16
WO2002039186A2 (en) 2002-05-16
AU2002229010A1 (en) 2002-05-21

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