AU2002214632A1 - Dissolution inhibitors in photoresist compositions for microlithography - Google Patents

Dissolution inhibitors in photoresist compositions for microlithography

Info

Publication number
AU2002214632A1
AU2002214632A1 AU2002214632A AU1463202A AU2002214632A1 AU 2002214632 A1 AU2002214632 A1 AU 2002214632A1 AU 2002214632 A AU2002214632 A AU 2002214632A AU 1463202 A AU1463202 A AU 1463202A AU 2002214632 A1 AU2002214632 A1 AU 2002214632A1
Authority
AU
Australia
Prior art keywords
microlithography
photoresist compositions
dissolution inhibitors
dissolution
inhibitors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002214632A
Inventor
Larry L. Berger
Andrew F. Feiring
Jerald Feldman
Viacheslav Alexandrovich Petrov
Frank L. Schadt Iii
Fredrick Claus Zumsteg Jr.
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of AU2002214632A1 publication Critical patent/AU2002214632A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing
    • Y10S430/108—Polyolefin or halogen containing
AU2002214632A 2000-10-13 2001-10-12 Dissolution inhibitors in photoresist compositions for microlithography Abandoned AU2002214632A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US68741000A 2000-10-13 2000-10-13
US09/687,410 2000-10-13
US26075901P 2001-01-10 2001-01-10
US60/260,759 2001-01-10
PCT/US2001/042662 WO2002031595A2 (en) 2000-10-13 2001-10-12 Dissolution inhibitors in photoresist compositions for microlithography

Publications (1)

Publication Number Publication Date
AU2002214632A1 true AU2002214632A1 (en) 2002-04-22

Family

ID=26948171

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002214632A Abandoned AU2002214632A1 (en) 2000-10-13 2001-10-12 Dissolution inhibitors in photoresist compositions for microlithography

Country Status (7)

Country Link
US (1) US7108953B2 (en)
EP (1) EP1325387A2 (en)
JP (1) JP2004523774A (en)
KR (1) KR20040012669A (en)
AU (1) AU2002214632A1 (en)
TW (1) TW575788B (en)
WO (1) WO2002031595A2 (en)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3945200B2 (en) * 2001-09-27 2007-07-18 信越化学工業株式会社 Chemically amplified resist material and pattern forming method
JP2003140345A (en) * 2001-11-02 2003-05-14 Fuji Photo Film Co Ltd Positive resist composition
CN1639640A (en) 2002-03-01 2005-07-13 E·I·内穆尔杜邦公司 Fluorinated copolymers for microlithography
JP2007525543A (en) * 2003-02-20 2007-09-06 プロメラス， エルエルシー Dissolution rate modifier for photoresist compositions
WO2005048283A2 (en) * 2003-07-18 2005-05-26 Northwestern University Surface and site-specific polymerization by direct-write lithography
JP2005049695A (en) * 2003-07-30 2005-02-24 Fuji Photo Film Co Ltd Positive resist composition
US7138550B2 (en) 2003-08-04 2006-11-21 Air Products And Chemicals, Inc. Bridged carbocyclic compounds and methods of making and using same
TWI368825B (en) 2004-07-07 2012-07-21 Fujifilm Corp Positive type resist composition for use in liquid immersion exposure and a method of forming the pattern using the same
JP4524154B2 (en) 2004-08-18 2010-08-11 富士フイルム株式会社 Chemically amplified resist composition and pattern forming method using the same
US7358029B2 (en) * 2005-09-29 2008-04-15 International Business Machines Corporation Low activation energy dissolution modification agents for photoresist applications
US7498781B2 (en) * 2006-04-07 2009-03-03 L&L Engineering Llc Methods and systems for disturbance rejection in DC-to-DC converters
JP2008209889A (en) * 2007-01-31 2008-09-11 Fujifilm Corp Positive resist composition and pattern forming method using the positive resist composition
US8323868B2 (en) * 2009-11-06 2012-12-04 International Business Machines Corporation Bilayer systems including a polydimethylglutarimide-based bottom layer and compositions thereof
KR200485138Y1 (en) 2016-05-10 2017-12-29 에버레이드 주식회사 Band aid

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4207261C2 (en) 1992-03-07 2000-03-16 Clariant Gmbh Styrene monomers with 2,2-bis-trifluoromethyl-oxaethano bridge members, polymers and their use
US6593058B1 (en) 1998-09-23 2003-07-15 E. I. Du Pont De Nemours And Company Photoresists, polymers and processes for microlithography
KR100571470B1 (en) * 1998-10-27 2006-04-17 이 아이 듀폰 디 네모아 앤드 캄파니 Photoresists and Processes for Microlithography
EP1035441A1 (en) 1999-03-09 2000-09-13 Matsushita Electric Industrial Co., Ltd. Pattern formation method
US6899995B2 (en) * 2000-11-29 2005-05-31 E.I. Du Pont De Nemours And Company Protecting groups in polymers, photoresists and processes for microlithography

Also Published As

Publication number Publication date
KR20040012669A (en) 2004-02-11
TW575788B (en) 2004-02-11
EP1325387A2 (en) 2003-07-09
US20050260519A1 (en) 2005-11-24
JP2004523774A (en) 2004-08-05
WO2002031595A2 (en) 2002-04-18
WO2002031595A3 (en) 2002-11-07
US7108953B2 (en) 2006-09-19

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