AU2001296952A1 - Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o - Google Patents

Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o

Info

Publication number
AU2001296952A1
AU2001296952A1 AU2001296952A AU9695201A AU2001296952A1 AU 2001296952 A1 AU2001296952 A1 AU 2001296952A1 AU 2001296952 A AU2001296952 A AU 2001296952A AU 9695201 A AU9695201 A AU 9695201A AU 2001296952 A1 AU2001296952 A1 AU 2001296952A1
Authority
AU
Australia
Prior art keywords
silicon carbide
layer
oxide
fabricating
carbide layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001296952A
Other languages
English (en)
Inventor
Mrinal Kanti Das
Lori Lipkin
John W Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/834,283 external-priority patent/US6610366B2/en
Application filed by Cree Inc filed Critical Cree Inc
Publication of AU2001296952A1 publication Critical patent/AU2001296952A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02115—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material being carbon, e.g. alpha-C, diamond or hydrogen doped carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02554—Oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7838—Field effect transistors with field effect produced by an insulated gate without inversion channel, e.g. buried channel lateral MISFETs, normally-on lateral MISFETs, depletion-mode lateral MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Laminated Bodies (AREA)
  • Chemical Or Physical Treatment Of Fibers (AREA)
  • Inorganic Fibers (AREA)
AU2001296952A 2000-10-03 2001-10-01 Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o Abandoned AU2001296952A1 (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US23742600P 2000-10-03 2000-10-03
US23782200P 2000-10-03 2000-10-03
US60237426 2000-10-03
US60237822 2000-10-03
US09834283 2001-04-12
US09/834,283 US6610366B2 (en) 2000-10-03 2001-04-12 Method of N2O annealing an oxide layer on a silicon carbide layer
US29430701P 2001-05-30 2001-05-30
US60294307 2001-05-30
PCT/US2001/042414 WO2002029874A2 (fr) 2000-10-03 2001-10-01 Procede de production d'une couche d'oxyde sur une couche de carbure de silicium au moyen de n2o

Publications (1)

Publication Number Publication Date
AU2001296952A1 true AU2001296952A1 (en) 2002-04-15

Family

ID=27499879

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001296952A Abandoned AU2001296952A1 (en) 2000-10-03 2001-10-01 Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o

Country Status (8)

Country Link
EP (1) EP1323185B1 (fr)
JP (1) JP3987796B2 (fr)
KR (1) KR100885757B1 (fr)
CN (1) CN1311534C (fr)
AT (1) ATE518238T1 (fr)
AU (1) AU2001296952A1 (fr)
CA (1) CA2421003C (fr)
WO (1) WO2002029874A2 (fr)

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US7067176B2 (en) * 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
US7709403B2 (en) 2003-10-09 2010-05-04 Panasonic Corporation Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
JP2006216918A (ja) * 2005-02-07 2006-08-17 Kyoto Univ 半導体素子の製造方法
US7727904B2 (en) 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
JP2010502031A (ja) * 2006-09-01 2010-01-21 エヌエックスピー ビー ヴィ 炭化ケイ素ｍｏｓｆｅｔの反転層移動度を改善する方法
JP5283147B2 (ja) * 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
KR100929397B1 (ko) * 2007-11-21 2009-12-02 한양대학교 산학협력단 실리콘 카바이드 나노입자를 이용한 비휘발성 메모리 소자및 이의 제조방법
US8217398B2 (en) * 2008-10-15 2012-07-10 General Electric Company Method for the formation of a gate oxide on a SiC substrate and SiC substrates and devices prepared thereby
JPWO2010110253A1 (ja) * 2009-03-27 2012-09-27 住友電気工業株式会社 Ｍｏｓｆｅｔおよびｍｏｓｆｅｔの製造方法
CA2736950A1 (fr) 2009-03-27 2010-09-30 Sumitomo Electric Industries, Ltd. Transistor mos et son procede de fabrication
KR20110137280A (ko) 2009-04-10 2011-12-22 스미토모덴키고교가부시키가이샤 절연 게이트형 전계 효과 트랜지스터
CN102484069A (zh) 2009-09-07 2012-05-30 罗姆股份有限公司 半导体装置及其制造方法
JP2012064873A (ja) * 2010-09-17 2012-03-29 Rohm Co Ltd 半導体装置およびその製造方法
JP5584823B2 (ja) 2011-03-29 2014-09-03 株式会社日立製作所 炭化珪素半導体装置
JP6500912B2 (ja) 2015-01-16 2019-04-17 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102016112877B4 (de) 2015-09-07 2021-07-15 Fuji Electric Co., Ltd. Verfahren zum Herstellen einer Halbleitervorrichtung und für das Verfahren verwendete Halbleiterherstellungsvorrichtung
JP6757928B2 (ja) * 2015-09-07 2020-09-23 国立大学法人大阪大学 半導体装置の製造方法及びこれに用いる半導体製造装置
CN105355561B (zh) * 2015-11-03 2018-04-10 大连理工大学 一种降低SiC MOS界面态密度的表面预处理方法
JP7056232B2 (ja) 2018-02-28 2022-04-19 富士電機株式会社 炭化珪素半導体装置および炭化珪素半導体装置の製造方法
DE102018107966B4 (de) 2018-04-04 2022-02-17 Infineon Technologies Ag Verfahren zum Bilden eines Breiter-Bandabstand-Halbleiter-Bauelements
CN110783173A (zh) * 2019-10-22 2020-02-11 中国电子科技集团公司第五十五研究所 一种在碳化硅材料上制造栅氧化层的方法
CN112151384B (zh) * 2020-08-17 2022-02-11 西安交通大学 一种基于超临界氮氧化合物改善4H-SiC/SiO2界面的低温处理方法及其应用
CN114551600A (zh) * 2022-02-22 2022-05-27 苏州龙驰半导体科技有限公司 半导体器件的制作方法和半导体器件
CN116259538B (zh) * 2023-03-30 2023-11-17 苏州龙驰半导体科技有限公司 提高SiC材料栅氧界面态质量的方法及其应用

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Also Published As

Publication number Publication date
KR20040002843A (ko) 2004-01-07
CN1311534C (zh) 2007-04-18
EP1323185A2 (fr) 2003-07-02
WO2002029874A2 (fr) 2002-04-11
WO2002029874A3 (fr) 2002-06-27
KR100885757B1 (ko) 2009-02-26
CN1552092A (zh) 2004-12-01
JP3987796B2 (ja) 2007-10-10
JP2004511101A (ja) 2004-04-08
EP1323185B1 (fr) 2011-07-27
CA2421003C (fr) 2012-06-26
CA2421003A1 (fr) 2002-04-11
ATE518238T1 (de) 2011-08-15

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