AU2001288387A1 - Electronic and optical devices and methods of forming these devices - Google Patents
Electronic and optical devices and methods of forming these devicesInfo
- Publication number
- AU2001288387A1 AU2001288387A1 AU2001288387A AU8838701A AU2001288387A1 AU 2001288387 A1 AU2001288387 A1 AU 2001288387A1 AU 2001288387 A AU2001288387 A AU 2001288387A AU 8838701 A AU8838701 A AU 8838701A AU 2001288387 A1 AU2001288387 A1 AU 2001288387A1
- Authority
- AU
- Australia
- Prior art keywords
- devices
- electronic
- methods
- forming
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 230000003287 optical effect Effects 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P1/00—Auxiliary devices
- H01P1/18—Phase-shifters
- H01P1/181—Phase-shifters using ferroelectric devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12004—Combinations of two or more optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29346—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means operating by wave or beam interference
- G02B6/29361—Interference filters, e.g. multilayer coatings, thin film filters, dichroic splitters or mirrors based on multilayers, WDM filters
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/28—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals
- G02B6/293—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means
- G02B6/29379—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device
- G02B6/29395—Optical coupling means having data bus means, i.e. plural waveguides interconnected and providing an inherently bidirectional system by mixing and splitting signals with wavelength selective means characterised by the function or use of the complete device configurable, e.g. tunable or reconfigurable
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/035—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect in an optical waveguide structure
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/05—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties
- G02F1/0508—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect with ferro-electric properties specially adapted for gating or modulating in optical waveguides
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/055—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic
- G02F1/0553—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect the active material being a ceramic specially adapted for gating or modulating in optical waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
- H01G4/008—Selection of materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/33—Thin- or thick-film capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G7/00—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture
- H01G7/06—Capacitors in which the capacitance is varied by non-mechanical means; Processes of their manufacture having a dielectric selected for the variation of its permittivity with applied voltage, i.e. ferroelectric capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/01—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate comprising only passive thin-film or thick-film elements formed on a common insulating substrate
- H01L27/016—Thin-film circuits
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
- G02F1/0316—Electrodes
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/29—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection
- G02F1/292—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the position or the direction of light beams, i.e. deflection by controlled diffraction or phased-array beam steering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31691—Inorganic layers composed of oxides or glassy oxides or oxide based glass with perovskite structure
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Nonlinear Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Laminated Bodies (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US22783800P | 2000-08-25 | 2000-08-25 | |
US60/227,838 | 2000-08-25 | ||
US23963200P | 2000-10-12 | 2000-10-12 | |
US60/239,632 | 2000-10-12 | ||
US28468501P | 2001-04-18 | 2001-04-18 | |
US60/284,685 | 2001-04-18 | ||
PCT/US2001/026491 WO2002016973A2 (en) | 2000-08-25 | 2001-08-24 | Electronic and optical devices and methods of forming these devices |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001288387A1 true AU2001288387A1 (en) | 2002-03-04 |
Family
ID=27397769
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001288387A Abandoned AU2001288387A1 (en) | 2000-08-25 | 2001-08-24 | Electronic and optical devices and methods of forming these devices |
Country Status (6)
Country | Link |
---|---|
US (1) | US7145412B2 (de) |
EP (1) | EP1561256A4 (de) |
CN (1) | CN100371766C (de) |
AU (1) | AU2001288387A1 (de) |
TW (1) | TWI284974B (de) |
WO (1) | WO2002016973A2 (de) |
Families Citing this family (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1305161B1 (de) * | 2000-08-03 | 2007-10-03 | nGimat Co. | Elektronische und optische materialien |
KR100467555B1 (ko) * | 2002-11-29 | 2005-01-24 | 한국전자통신연구원 | 강유전체/상유전체 바륨-스트론듐-티타늄 산화물 박막을구비하는 초고주파 가변소자 |
JP4698161B2 (ja) * | 2003-05-13 | 2011-06-08 | 独立行政法人科学技術振興機構 | 圧電材料とその製造方法 |
US8569142B2 (en) | 2003-11-28 | 2013-10-29 | Blackberry Limited | Multi-level thin film capacitor on a ceramic substrate and method of manufacturing the same |
US7224040B2 (en) | 2003-11-28 | 2007-05-29 | Gennum Corporation | Multi-level thin film capacitor on a ceramic substrate |
CN100592570C (zh) * | 2003-12-30 | 2010-02-24 | 艾利森电话股份有限公司 | 可调谐微波装置 |
US20070132065A1 (en) * | 2005-12-08 | 2007-06-14 | Su Jae Lee | Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same |
WO2007114391A1 (ja) * | 2006-03-31 | 2007-10-11 | Kyocera Corporation | 誘電体導波路デバイス、これを備える移相器、高周波スイッチおよび減衰器、ならびに高周波送信器、高周波受信器、高周波送受信器およびレーダ装置、アレイアンテナ装置、誘電体導波路デバイスの製造方法 |
JP4537339B2 (ja) * | 2006-03-31 | 2010-09-01 | 京セラ株式会社 | 移相器ならびにこれを備える高周波送信器、高周波受信器、高周波送受信器、レーダ装置およびアンテナ装置 |
US7582549B2 (en) | 2006-08-25 | 2009-09-01 | Micron Technology, Inc. | Atomic layer deposited barium strontium titanium oxide films |
JP5202897B2 (ja) * | 2007-07-25 | 2013-06-05 | 住友電工デバイス・イノベーション株式会社 | 電界効果トランジスタおよびその製造方法 |
DE102008005283B4 (de) * | 2008-01-19 | 2009-10-29 | Schott Solar Gmbh | Verfahren zur Herstellung einer mit einem transparenten, Metalloxid beschichtetn Glasscheibe für ein photovoltaisches Modul und eine solche beschichtete Glasscheibe |
US8674792B2 (en) | 2008-02-07 | 2014-03-18 | Toyota Motor Engineering & Manufacturing North America, Inc. | Tunable metamaterials |
KR101025701B1 (ko) | 2008-09-17 | 2011-03-30 | 연세대학교 산학협력단 | 반도체성 잉크 조성물, 반도체성 산화물 박막, 및 그 제조방법 |
JPWO2009131140A1 (ja) * | 2008-04-22 | 2011-08-18 | 日本電気株式会社 | 電磁バンドギャップ構造及びその製造方法、フィルタ素子、フィルタ素子内蔵プリント基板 |
JP5218285B2 (ja) * | 2009-06-04 | 2013-06-26 | 住友化学株式会社 | 熱電変換材料 |
JP2011187846A (ja) * | 2010-03-10 | 2011-09-22 | Seiko Epson Corp | 液体噴射ヘッド及び液体噴射装置 |
EP2426684A1 (de) * | 2010-09-02 | 2012-03-07 | Mitsubishi Materials Corporation | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht, Verfahren zur Bildung einer dielektrischen Dünnschicht und durch das Verfahren gebildete dielektrische Dünnschicht |
TWI466442B (zh) | 2011-12-07 | 2014-12-21 | Ind Tech Res Inst | 指叉型耦合共振器 |
EP2608219B1 (de) * | 2011-12-20 | 2015-03-04 | Mitsubishi Materials Corporation | Zusammensetzung zur Bildung einer dielektrischen Dünnschicht, Verfahren zur Bildung einer dielektrischen Dünnschicht und durch das Verfahren gebildete dielektrische Dünnschicht |
JP2014144881A (ja) * | 2013-01-28 | 2014-08-14 | Mitsubishi Materials Corp | 誘電体薄膜形成用組成物及びこの組成物を用いた誘電体薄膜の形成方法 |
WO2015167529A1 (en) * | 2014-04-30 | 2015-11-05 | Hewlett-Packard Development Company, L.P. | Electrocaloric heating and cooling device |
CN104134541A (zh) * | 2014-05-30 | 2014-11-05 | 天津大学 | 一种全透型薄膜压控变容管及其制备方法 |
CN103996540A (zh) * | 2014-05-30 | 2014-08-20 | 天津大学 | 全透型铋基焦绿石薄膜压控变容管及其制备方法 |
CN104701595B (zh) * | 2015-04-03 | 2017-06-09 | 中国计量学院 | 一种超材料谐振装置 |
EP3545357B1 (de) * | 2016-11-23 | 2023-06-14 | Rockley Photonics Limited | Optoelektronische vorrichtung |
CN111095451A (zh) * | 2017-09-08 | 2020-05-01 | 阿维科斯公司 | 高压可调多层电容器 |
EP3462511B1 (de) * | 2017-09-28 | 2021-11-24 | Univ Paris XIII Paris-Nord Villetaneuse | Für hohe stromdichte konfigurierte, mikro organische optoelektronische vorrichtung |
TWI677109B (zh) * | 2018-02-02 | 2019-11-11 | 國立臺灣大學 | 抬頭顯示器、發光薄膜與其製法 |
US10862182B2 (en) * | 2018-08-06 | 2020-12-08 | Alcan Systems Gmbh | RF phase shifter comprising a differential transmission line having overlapping sections with tunable dielectric material for phase shifting signals |
US10770412B2 (en) | 2018-08-23 | 2020-09-08 | Globalfoundries Inc. | Guard ring for photonic integrated circuit die |
US10854970B2 (en) | 2018-11-06 | 2020-12-01 | Alcan Systems Gmbh | Phased array antenna |
JP7454687B2 (ja) * | 2020-01-29 | 2024-03-22 | サイカンタム・コーポレーション | デバイスおよび光スイッチ |
US11391891B2 (en) | 2020-03-03 | 2022-07-19 | Psiquantum, Corp. | Fabrication method for photonic devices |
CN111883893A (zh) * | 2020-08-06 | 2020-11-03 | 上海星申仪表有限公司 | 一种基于ito材料的低成本基片集成波导均衡器 |
WO2024116447A1 (ja) * | 2022-11-30 | 2024-06-06 | 株式会社村田製作所 | 光変調器 |
WO2024116446A1 (ja) * | 2022-11-30 | 2024-06-06 | 株式会社村田製作所 | 光変調器 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3664867A (en) * | 1969-11-24 | 1972-05-23 | North American Rockwell | Composite structure of zinc oxide deposited epitaxially on sapphire |
US3695745A (en) * | 1970-01-18 | 1972-10-03 | Nippon Electric Co | Light wave guide circuit |
US4390236A (en) * | 1981-03-19 | 1983-06-28 | Bell Telephone Laboratories, Incorporated | Tunable polarization independent wavelength filter |
US5270298A (en) * | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
TW229350B (de) * | 1992-08-28 | 1994-09-01 | Hitachi Seisakusyo Kk | |
US5472935A (en) * | 1992-12-01 | 1995-12-05 | Yandrofski; Robert M. | Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films |
US5703710A (en) | 1994-09-09 | 1997-12-30 | Deacon Research | Method for manipulating optical energy using poled structure |
US5633616A (en) * | 1994-10-07 | 1997-05-27 | Mitsubishi Denki Kabushiki Kaisha | Thin film saw filter including doped electrodes |
US5965494A (en) * | 1995-05-25 | 1999-10-12 | Kabushiki Kaisha Toshiba | Tunable resonance device controlled by separate permittivity adjusting electrodes |
US6097263A (en) * | 1996-06-28 | 2000-08-01 | Robert M. Yandrofski | Method and apparatus for electrically tuning a resonating device |
US5892859A (en) * | 1997-06-11 | 1999-04-06 | The United States Of America As Represented By The Secretary Of The Air Force | Integrated circuit compatible electro-optic controlling device for high data rate optical signals |
US6045932A (en) * | 1998-08-28 | 2000-04-04 | The Regents Of The Universitiy Of California | Formation of nonlinear dielectric films for electrically tunable microwave devices |
-
2001
- 2001-08-24 EP EP01968113A patent/EP1561256A4/de not_active Withdrawn
- 2001-08-24 US US10/362,435 patent/US7145412B2/en not_active Expired - Lifetime
- 2001-08-24 WO PCT/US2001/026491 patent/WO2002016973A2/en active Search and Examination
- 2001-08-24 CN CNB018173543A patent/CN100371766C/zh not_active Expired - Fee Related
- 2001-08-24 AU AU2001288387A patent/AU2001288387A1/en not_active Abandoned
- 2001-08-27 TW TW090121036A patent/TWI284974B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
WO2002016973A3 (en) | 2005-06-16 |
TWI284974B (en) | 2007-08-01 |
WO2002016973A2 (en) | 2002-02-28 |
US20040066250A1 (en) | 2004-04-08 |
EP1561256A4 (de) | 2006-06-21 |
EP1561256A2 (de) | 2005-08-10 |
US7145412B2 (en) | 2006-12-05 |
CN1636158A (zh) | 2005-07-06 |
CN100371766C (zh) | 2008-02-27 |
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