AU2118200A - Optical device and method of manufacture - Google Patents
Optical device and method of manufactureInfo
- Publication number
- AU2118200A AU2118200A AU21182/00A AU2118200A AU2118200A AU 2118200 A AU2118200 A AU 2118200A AU 21182/00 A AU21182/00 A AU 21182/00A AU 2118200 A AU2118200 A AU 2118200A AU 2118200 A AU2118200 A AU 2118200A
- Authority
- AU
- Australia
- Prior art keywords
- manufacture
- optical device
- optical
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18391—Aperiodic structuring to influence the near- or far-field distribution
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
- H01S2301/166—Single transverse or lateral mode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18344—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] characterized by the mesa, e.g. dimensions or shape of the mesa
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18377—Structure of the reflectors, e.g. hybrid mirrors comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9901961 | 1999-01-29 | ||
GBGB9901961.4A GB9901961D0 (en) | 1999-01-29 | 1999-01-29 | Optical device and method of manufacture |
PCT/GB2000/000223 WO2000045483A1 (en) | 1999-01-29 | 2000-01-28 | Optical device and method of manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2118200A true AU2118200A (en) | 2000-08-18 |
Family
ID=10846710
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU21182/00A Abandoned AU2118200A (en) | 1999-01-29 | 2000-01-28 | Optical device and method of manufacture |
Country Status (3)
Country | Link |
---|---|
AU (1) | AU2118200A (en) |
GB (1) | GB9901961D0 (en) |
WO (1) | WO2000045483A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6727520B2 (en) * | 2000-12-29 | 2004-04-27 | Honeywell International Inc. | Spatially modulated reflector for an optoelectronic device |
GB2379797A (en) * | 2001-09-15 | 2003-03-19 | Zarlink Semiconductor Ab | Surface Emitting Laser |
KR100475858B1 (en) * | 2002-04-01 | 2005-03-18 | 주식회사 테라스테이트 | A Vertical Cavity Surface Emitting Lasers |
KR100447745B1 (en) * | 2002-04-04 | 2004-09-08 | 주식회사 옵토웰 | Single mode vertical-cavity surface-emitting laser diode and fabrication method thereof |
GB2399940A (en) * | 2003-03-25 | 2004-09-29 | Sharp Kk | Vertical cavity surface emitting laser |
US7408967B2 (en) * | 2005-12-19 | 2008-08-05 | Emcore Corporation | Method of fabricating single mode VCSEL for optical mouse |
US7791591B2 (en) * | 2006-08-04 | 2010-09-07 | Emcore Corporation | Optical mouse using VCSELs |
US8189642B1 (en) | 2007-08-08 | 2012-05-29 | Emcore Corporation | VCSEL semiconductor device |
CN112805889B (en) | 2018-10-08 | 2024-09-13 | 统雷有限公司 | Electric pumping vertical cavity laser |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2684245B1 (en) * | 1991-11-26 | 1994-01-07 | Commissariat Energie Atomique | SEMICONDUCTOR LASER MATRIX. |
US5256596A (en) * | 1992-03-26 | 1993-10-26 | Motorola, Inc. | Top emitting VCSEL with implant |
US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
US5606572A (en) * | 1994-03-24 | 1997-02-25 | Vixel Corporation | Integration of laser with photodiode for feedback control |
GB2295270A (en) * | 1994-11-14 | 1996-05-22 | Sharp Kk | Surface-emitting laser with profiled active region |
US5468656A (en) * | 1994-11-29 | 1995-11-21 | Motorola | Method of making a VCSEL |
US5568499A (en) * | 1995-04-07 | 1996-10-22 | Sandia Corporation | Optical device with low electrical and thermal resistance bragg reflectors |
US5594751A (en) * | 1995-06-26 | 1997-01-14 | Optical Concepts, Inc. | Current-apertured vertical cavity laser |
JP3546628B2 (en) * | 1997-02-07 | 2004-07-28 | 富士ゼロックス株式会社 | Surface-emitting type semiconductor laser device |
-
1999
- 1999-01-29 GB GBGB9901961.4A patent/GB9901961D0/en not_active Ceased
-
2000
- 2000-01-28 WO PCT/GB2000/000223 patent/WO2000045483A1/en active Application Filing
- 2000-01-28 AU AU21182/00A patent/AU2118200A/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
WO2000045483A1 (en) | 2000-08-03 |
GB9901961D0 (en) | 1999-03-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK6 | Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase |