AU2001275143A1 - Inductive charge pump circuit for providing voltages useful for flash memory andother applications - Google Patents

Inductive charge pump circuit for providing voltages useful for flash memory andother applications

Info

Publication number
AU2001275143A1
AU2001275143A1 AU2001275143A AU7514301A AU2001275143A1 AU 2001275143 A1 AU2001275143 A1 AU 2001275143A1 AU 2001275143 A AU2001275143 A AU 2001275143A AU 7514301 A AU7514301 A AU 7514301A AU 2001275143 A1 AU2001275143 A1 AU 2001275143A1
Authority
AU
Australia
Prior art keywords
switching device
inductive element
inductive
control signal
andother
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001275143A
Other languages
English (en)
Inventor
Richard Foehringer
Jahanshir Javanifard
Priya Walimbe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Intel Corp
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Publication of AU2001275143A1 publication Critical patent/AU2001275143A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
AU2001275143A 2000-06-30 2001-06-01 Inductive charge pump circuit for providing voltages useful for flash memory andother applications Abandoned AU2001275143A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/607,483 US6469482B1 (en) 2000-06-30 2000-06-30 Inductive charge pump circuit for providing voltages useful for flash memory and other applications
US09607483 2000-06-30
PCT/US2001/017846 WO2002003389A1 (fr) 2000-06-30 2001-06-01 Circuit de pompage de charge inductive fournissant des tensions utiles pour memoires flash et autres applications

Publications (1)

Publication Number Publication Date
AU2001275143A1 true AU2001275143A1 (en) 2002-01-14

Family

ID=24432478

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001275143A Abandoned AU2001275143A1 (en) 2000-06-30 2001-06-01 Inductive charge pump circuit for providing voltages useful for flash memory andother applications

Country Status (9)

Country Link
US (2) US6469482B1 (fr)
EP (1) EP1297530B1 (fr)
CN (1) CN100524505C (fr)
AT (1) ATE492020T1 (fr)
AU (1) AU2001275143A1 (fr)
DE (1) DE60143656D1 (fr)
HK (1) HK1052576A1 (fr)
TW (1) TW519657B (fr)
WO (1) WO2002003389A1 (fr)

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US7002381B1 (en) * 2001-12-11 2006-02-21 Advanced Micro Devices, Inc. Switched-capacitor controller to control the rise times of on-chip generated high voltages
CN100480940C (zh) * 2002-04-03 2009-04-22 国际整流器公司 同步降压转换器改进
US6903535B2 (en) * 2002-04-16 2005-06-07 Arques Technology, Inc. Biasing system and method for low voltage DC—DC converters with built-in N-FETs
DE60317457D1 (de) * 2003-01-31 2007-12-27 St Microelectronics Srl Einbettbares Flashspeichersystem für nichtflüchtige Speicherung von Kode, Daten und Bitströmen für eingebettete FPGA-Konfigurationen
EP1624558B1 (fr) * 2003-05-13 2010-11-24 Fujitsu Semiconductor Limited Dispositif de circuit integre a semi-conducteurs
CN1323434C (zh) * 2003-09-02 2007-06-27 台湾积体电路制造股份有限公司 整合闪存与高电压组件的制造方法
US7319616B2 (en) 2003-11-13 2008-01-15 Intel Corporation Negatively biasing deselected memory cells
US20080100393A1 (en) * 2004-04-30 2008-05-01 Custom One Design, Inc. Low Power Direct Conversion Rf Transceiver Architecture and Asic and Systems Including Such
EP1779500A2 (fr) * 2004-08-09 2007-05-02 Koninklijke Philips Electronics N.V. Convertisseur de puissance, circuit integre ainsi equipe, appareil egalement equipe du convertisseur, et procede de conversion
KR100622892B1 (ko) * 2004-12-09 2006-09-19 엘지전자 주식회사 저 전력소비형 이동통신 단말기
ITMI20050607A1 (it) * 2005-04-11 2006-10-12 St Microelectronics Srl Dispositivo elettronico integrato a bassa tensione di alimentazione
JPWO2006129339A1 (ja) * 2005-05-30 2008-12-25 スパンション エルエルシー 記憶装置、および記憶装置の制御方法
JPWO2007043095A1 (ja) * 2005-09-30 2009-04-16 スパンション エルエルシー 記憶装置、および記憶装置の制御方法
US7417488B2 (en) 2005-11-04 2008-08-26 Intel Corporation Regulation circuit for inductive charge pump
DE602006009091D1 (de) 2006-07-06 2009-10-22 St Microelectronics Srl Integrierte Steuerschaltung einer Ladungspumpe
JP2008071935A (ja) * 2006-09-14 2008-03-27 Toshiba Corp 半導体装置
US20080107013A1 (en) * 2006-11-06 2008-05-08 Nokia Corporation Signature generation using coded waveforms
ITVA20060071A1 (it) * 2006-12-05 2008-06-06 St Microelectronics Srl Regolatore di tensione con soli transistori del tipo high voltage
CN102044285B (zh) * 2009-10-22 2013-11-06 鸿富锦精密工业（深圳）有限公司 内存供电电路
JP2011216136A (ja) * 2010-03-31 2011-10-27 Fujitsu Semiconductor Ltd 半導体集積回路装置
TWI418130B (zh) * 2011-05-19 2013-12-01 Univ Nat Taipei Technology Step-up conversion circuit
US8723491B2 (en) * 2011-12-19 2014-05-13 Arctic Sand Technologies, Inc. Control of power converters with capacitive energy transfer
US8619445B1 (en) 2013-03-15 2013-12-31 Arctic Sand Technologies, Inc. Protection of switched capacitor power converter
CN104716837B (zh) * 2013-12-17 2018-06-15 通用电气公司 升降压变换器和升降压控制方法
US9680374B2 (en) 2014-05-27 2017-06-13 Marcus Allen Smith DC to DC boost converter utilizing storage capacitors charged by parallel inductor
KR102571572B1 (ko) * 2018-12-05 2023-08-29 에스케이하이닉스 주식회사 전압 강하 레벨을 검출하기 위한 반도체 장치 및 반도체 시스템
US11145378B2 (en) * 2019-02-19 2021-10-12 Texas Instruments Incorporated Methods and apparatus to improve performance while reading a one-time programmable memory
US11171477B2 (en) * 2019-02-22 2021-11-09 Texas Instruments Incorporated Turn off circuit for protection switch

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Also Published As

Publication number Publication date
ATE492020T1 (de) 2011-01-15
US20030006742A1 (en) 2003-01-09
EP1297530A1 (fr) 2003-04-02
EP1297530B1 (fr) 2010-12-15
CN100524505C (zh) 2009-08-05
TW519657B (en) 2003-02-01
US6469482B1 (en) 2002-10-22
WO2002003389A1 (fr) 2002-01-10
CN1483204A (zh) 2004-03-17
DE60143656D1 (de) 2011-01-27
HK1052576A1 (zh) 2003-09-19
US6744669B2 (en) 2004-06-01

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