AU2001267174A1 - Heat-treating methods and systems - Google Patents
Heat-treating methods and systemsInfo
- Publication number
- AU2001267174A1 AU2001267174A1 AU2001267174A AU6717401A AU2001267174A1 AU 2001267174 A1 AU2001267174 A1 AU 2001267174A1 AU 2001267174 A AU2001267174 A AU 2001267174A AU 6717401 A AU6717401 A AU 6717401A AU 2001267174 A1 AU2001267174 A1 AU 2001267174A1
- Authority
- AU
- Australia
- Prior art keywords
- systems
- heat
- treating methods
- treating
- methods
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/12—Heating of the reaction chamber
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
- H01L21/2686—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation using incoherent radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
- F27D2019/0003—Monitoring the temperature or a characteristic of the charge and using it as a controlling value
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D99/00—Subject matter not provided for in other groups of this subclass
- F27D99/0001—Heating elements or systems
- F27D99/0006—Electric heating elements or system
- F27D2099/0026—Electric heating elements or system with a generator of electromagnetic radiations
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/928—Front and rear surface processing
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/729,747 US6594446B2 (en) | 2000-12-04 | 2000-12-04 | Heat-treating methods and systems |
US09729747 | 2000-12-04 | ||
PCT/CA2001/000776 WO2002047143A1 (en) | 2000-12-04 | 2001-05-30 | Heat-treating methods and systems |
Publications (1)
Publication Number | Publication Date |
---|---|
AU2001267174A1 true AU2001267174A1 (en) | 2002-06-18 |
Family
ID=24932436
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
AU2001267174A Abandoned AU2001267174A1 (en) | 2000-12-04 | 2001-05-30 | Heat-treating methods and systems |
Country Status (4)
Country | Link |
---|---|
US (4) | US6594446B2 (en) |
JP (2) | JP4944353B2 (en) |
AU (1) | AU2001267174A1 (en) |
WO (1) | WO2002047143A1 (en) |
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US6594446B2 (en) | 2000-12-04 | 2003-07-15 | Vortek Industries Ltd. | Heat-treating methods and systems |
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US6998580B2 (en) * | 2002-03-28 | 2006-02-14 | Dainippon Screen Mfg. Co., Ltd. | Thermal processing apparatus and thermal processing method |
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-
2000
- 2000-12-04 US US09/729,747 patent/US6594446B2/en not_active Expired - Lifetime
-
2001
- 2001-05-30 WO PCT/CA2001/000776 patent/WO2002047143A1/en active Application Filing
- 2001-05-30 AU AU2001267174A patent/AU2001267174A1/en not_active Abandoned
- 2001-12-04 US US10/005,186 patent/US6941063B2/en not_active Expired - Lifetime
- 2001-12-04 JP JP2002548756A patent/JP4944353B2/en not_active Expired - Lifetime
-
2003
- 2003-04-30 US US10/427,094 patent/US6963692B2/en not_active Expired - Lifetime
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2004
- 2004-11-02 US US10/979,447 patent/US20050062388A1/en not_active Abandoned
-
2009
- 2009-12-07 JP JP2009277663A patent/JP2010093282A/en active Pending
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US20030206732A1 (en) | 2003-11-06 |
JP2004515085A (en) | 2004-05-20 |
JP4944353B2 (en) | 2012-05-30 |
US6594446B2 (en) | 2003-07-15 |
US6963692B2 (en) | 2005-11-08 |
US20020067918A1 (en) | 2002-06-06 |
US20020102098A1 (en) | 2002-08-01 |
US6941063B2 (en) | 2005-09-06 |
US20050062388A1 (en) | 2005-03-24 |
JP2010093282A (en) | 2010-04-22 |
WO2002047143A1 (en) | 2002-06-13 |
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