JPS5870536A - Laser annealing method - Google Patents
Laser annealing methodInfo
- Publication number
- JPS5870536A JPS5870536A JP16953381A JP16953381A JPS5870536A JP S5870536 A JPS5870536 A JP S5870536A JP 16953381 A JP16953381 A JP 16953381A JP 16953381 A JP16953381 A JP 16953381A JP S5870536 A JPS5870536 A JP S5870536A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- heated
- temperature
- gas injection
- laser annealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005224 laser annealing Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title claims abstract description 10
- 238000010438 heat treatment Methods 0.000 claims abstract description 6
- 239000011261 inert gas Substances 0.000 claims abstract 2
- 238000002347 injection Methods 0.000 abstract description 12
- 239000007924 injection Substances 0.000 abstract description 12
- 239000013078 crystal Substances 0.000 abstract description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 2
- 239000007789 gas Substances 0.000 abstract 2
- 238000010276 construction Methods 0.000 abstract 1
- 210000000078 claw Anatomy 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
Abstract
Description
本発明はレーザアニール方法に関し、特にレーザビ−ム
を施こすべき被処理基板の予備加熱方法に関する。
半導体基板或いは半導体層表面をレーザビームで走査し
加熱するレーザアニール法は、酸化膜上の多結晶シリコ
ンの単結晶化やイオン注入によシ生じた半導体結晶のダ
メージの除去や、シリコン（Ｓｌ）基板表面に被着せし
め九金属層をｙｙサイド化するのに用いられている０例
えば上述の酸化膜上の多結晶シリコンの単結晶化等を行
なうには被処理試料表面のレーザビーム照射部分を局部
的ではあるが１１００［℃］、戚いは１４００［’Ｃ］
という高温に加熱しなければならない。ところが現在実
用に供されているレーザは上記目的に対して出力が不足
し、試料を所望温度まで昇温するには何らかの手段によ
シ予備加熱を施ζすことが必要である。
そこで従来は試料を搭載するＸ−Ｙステージ上に、試料
を予備加熱する丸めのヒータを設ける等の手段が用いら
れてい丸。そのためＸ−Ｙステージやその他の部分に水
冷機構を設けて、レーザアニール装置を保護していた。
かかる従来の予備加熱方法では、予備加熱により昇温し
得る試料の温度範囲が制約されるのみならず、水冷を必
要とするためレーザアニール装置が複雑となるという問
題があった。
本発明の目的は予備加熱温度に対する制約の少ないレー
ザアニール方法を提供する仁とにあシ、この目的線本発
明において、被処理試料を不活性ガス流によシ被処理試
料を所定位置に浮上せしめ、この浮上せる被処理試料を
予めマイクロ波加熱法によシ加熱外温せしめておくこと
によシ達成される。
第１図及び第２図は本発明の一実施例を説明するための
図で、第１図は一実施例に用いたレーザアニール装置の
要部正面断面図、第２図は第１図の上面図である。
両図において、１は被処理試料で例えば゛Ｖリコシ（Ｓ
ｉ）基板、２はＸ−ＹＸ？−ジ、３はマイクロ波源、４
はガス噴射板、５はガス噴射口、６はガス導入口、７は
爪、８はレーザビームである。
上記中、マイクロ波源３は例えばマグネトロンを用いて
作成できる。ガス噴射板４はマイクロ波を吸収しない材
質、例えばガラス板等を用いて中空平板状に作成し、上
面には複数個のガス噴射口５を設けておく。爪７はガス
を噴射されてガス噴射板４上よシ浮上した試料１を所定
位置に停止させるためのス）ツバである。
次に上記装置を月いて、試料１表面に形成した晶化する
方法を一例として掲げて説明する。
先ず試料１を多結晶Ｆリコン層（図示せず）を上側に向
けてガス噴射板４上に載置し、ガス導入口６よシ予め１
００［”０］程度に加熱した憲素（Ｎ、）ガスを導入し
、ガス噴射口５よシ噴射させることにより、試料１は浮
上し、爪７に当って停止すムＮ、ガスを予め加熱してお
くのは、ガス流によって試料１からうばわれる熱量を減
少させるためである。
次いでマイクロ波源３を作動させて試料１を加熱する。
このとき、マイクロ波の周波数的２．７［ＧＨｚｌ、出
力的２００［Ｗ］で試料１は凡そ４００The present invention relates to a laser annealing method, and more particularly to a method for preheating a substrate to be processed to which a laser beam is applied. The laser annealing method, in which the surface of a semiconductor substrate or semiconductor layer is scanned and heated with a laser beam, is used to convert polycrystalline silicon on an oxide film into a single crystal, to remove damage to semiconductor crystals caused by ion implantation, and to remove damage to semiconductor crystals caused by ion implantation. For example, to single-crystallize polycrystalline silicon on the oxide film mentioned above, the part of the surface of the sample to be processed that is irradiated with the laser beam is Although it is local, it is 1100 [°C], and its relatives are 1400 ['C]
It must be heated to a high temperature. However, the lasers currently in practical use have insufficient output for the above purpose, and it is necessary to preheat the sample by some means in order to raise the temperature to the desired temperature. Conventionally, therefore, measures such as providing a round heater to preheat the sample on the X-Y stage on which the sample is mounted have been used. Therefore, a water cooling mechanism was provided in the X-Y stage and other parts to protect the laser annealing device. Such conventional preheating methods not only limit the temperature range of the sample that can be heated by preheating, but also require water cooling, which complicates the laser annealing apparatus. An object of the present invention is to provide a laser annealing method with fewer restrictions on preheating temperature. This is achieved by heating the sample to be floated to an external temperature in advance using a microwave heating method. 1 and 2 are diagrams for explaining one embodiment of the present invention. FIG. 1 is a front cross-sectional view of the main part of a laser annealing apparatus used in one embodiment, and FIG. FIG. In both figures, 1 is a sample to be processed, for example,
i) Board, 2 is X-YX? - di, 3 is microwave source, 4
5 is a gas injection plate, 5 is a gas injection port, 6 is a gas introduction port, 7 is a claw, and 8 is a laser beam. Among the above, the microwave source 3 can be created using, for example, a magnetron. The gas injection plate 4 is formed into a hollow flat plate using a material that does not absorb microwaves, such as a glass plate, and a plurality of gas injection ports 5 are provided on the upper surface. The claw 7 is a collar for stopping the sample 1 which has been injected with gas and floated above the gas injection plate 4 at a predetermined position. Next, an example of a method of crystallization formed on the surface of the sample 1 by using the above-mentioned apparatus will be described. First, place the sample 1 on the gas injection plate 4 with the polycrystalline F silicon layer (not shown) facing upward, and place the sample 1 in advance through the gas inlet 6.
By introducing N gas heated to about 0.00 ["0] and injecting it through the gas injection port 5, the sample 1 floats up and stops when it hits the claw 7. The reason for heating is to reduce the amount of heat carried away from the sample 1 by the gas flow. Next, the microwave source 3 is activated to heat the sample 1. At this time, the microwave frequency is 2.7 [GHzl]. , sample 1 has an output of approximately 400 [W].
【℃】に加熱さ
れる。試料１がこのように加熱されても、ガス噴射板４
は前述した如くマイクロ波を吸収しないので温度は上ら
ない。またマイクロ波源５の設計を適切に行なうことに
よシマイクロ波の放射方向を試料１の方向に限定し得る
ので、Ｘ−Ｙステージ２等が加熱されることもない。
上述の如く本実施例においては、試料１以外は加熱され
ることがなく、また試料１は爪７を除いて非接触の状態
とされているので、試料１からの熱伝導によって他の部
分が昇温することもない。
従って他へ悪影響を及ぼすことなく試料を所望の温度に
加熱し得る。
以上の如く試料１を予め凡そ４００It is heated to [℃]. Even if the sample 1 is heated in this way, the gas injection plate 4
As mentioned above, the temperature does not rise because it does not absorb microwaves. Furthermore, by appropriately designing the microwave source 5, the radiation direction of the microwave can be limited to the direction of the sample 1, so that the XY stage 2 and the like will not be heated. As mentioned above, in this example, nothing other than sample 1 is heated, and sample 1 is in a non-contact state except for claw 7, so other parts are heated by heat conduction from sample 1. There is no rise in temperature. Therefore, the sample can be heated to a desired temperature without adversely affecting others. As mentioned above, sample 1 is prepared in advance at approximately 400 ml.
【℃】に加熱してお
けば、通常用いられる出力的２０ ［ｍＸ ］のＣＷｖ
−ザーを用いて前記多結晶シリコン層を走査することに
よ）、多結晶ｙｙコン層は溶融温度の１４００（”Ｃ１
程度まで昇温し、単結晶化される。
以上説明した如く本発明によれば、レーザビ−ム
を及ぼすことなく、被処理試料を所望の温度に予備加熱
することが可能になる。If heated to [℃], the normally used output power of 20 [mX] CWv
- by scanning the polycrystalline silicon layer with a
The temperature is raised to a certain degree, and it becomes a single crystal. As explained above, according to the present invention, it is possible to preheat a sample to be processed to a desired temperature without applying a laser beam.
第１図及び第２図は本発明の一実施例を示す要部正面断
面図及び要部上面図である。
図にお−て、１は被処理試料、３はマイクロ波源、４は
ガス噴射板、５はガス噴射口、８はレーザビームを示す
。
第１図
第２図FIGS. 1 and 2 are a front sectional view and a top view of essential parts showing an embodiment of the present invention. In the figure, 1 is a sample to be processed, 3 is a microwave source, 4 is a gas injection plate, 5 is a gas injection port, and 8 is a laser beam. Figure 1 Figure 2
Claims (1)
記被処理試料背面に向けて下方より不活性ガスを噴射し
て被処理試料を所定位置に浮上せし工 め、該浮遊せる被処理試料をマイクロ波加熱法により予
め所定温度に昇温しておくことを特徴とするレーザアニ
ール方法。[Claims] Laser annealing is performed on the surface of the sample to be processed, and inert gas is injected from below toward the back surface of the sample to be processed to levitate the sample to a predetermined position. A laser annealing method characterized by heating a floating sample to a predetermined temperature using microwave heating.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16953381A JPS5870536A (en) | 1981-10-22 | 1981-10-22 | Laser annealing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16953381A JPS5870536A (en) | 1981-10-22 | 1981-10-22 | Laser annealing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5870536A true JPS5870536A (en) | 1983-04-27 |
Family
ID=15888253
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16953381A Pending JPS5870536A (en) | 1981-10-22 | 1981-10-22 | Laser annealing method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5870536A (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60223112A (en) * | 1984-04-20 | 1985-11-07 | Agency Of Ind Science & Technol | Heat treatment device for semiconductor |
| US4678432A (en) * | 1984-11-26 | 1987-07-07 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method |
| GB2406710A (en) * | 2000-12-04 | 2005-04-06 | Vortek Ind Ltd | Heat-treating methods and systems |
| US6941063B2 (en) | 2000-12-04 | 2005-09-06 | Mattson Technology Canada, Inc. | Heat-treating methods and systems |
| JP2009194370A (en) * | 2008-01-16 | 2009-08-27 | Semiconductor Energy Lab Co Ltd | Laser treatment equipment and semiconductor substrate preparing method |
| WO2011096326A1 (en) * | 2010-02-04 | 2011-08-11 | 富士電機システムズ株式会社 | Process for production of semiconductor element, and device for production of semiconductor element |
| US8313989B2 (en) | 2008-10-22 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing the same |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
-
1981
- 1981-10-22 JP JP16953381A patent/JPS5870536A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60223112A (en) * | 1984-04-20 | 1985-11-07 | Agency Of Ind Science & Technol | Heat treatment device for semiconductor |
| US4678432A (en) * | 1984-11-26 | 1987-07-07 | Dainippon Screen Mfg. Co., Ltd. | Heat treatment method |
| GB2406710A (en) * | 2000-12-04 | 2005-04-06 | Vortek Ind Ltd | Heat-treating methods and systems |
| GB2406710B (en) * | 2000-12-04 | 2005-06-22 | Vortek Ind Ltd | Heat-treating methods and systems |
| US6941063B2 (en) | 2000-12-04 | 2005-09-06 | Mattson Technology Canada, Inc. | Heat-treating methods and systems |
| US9627244B2 (en) | 2002-12-20 | 2017-04-18 | Mattson Technology, Inc. | Methods and systems for supporting a workpiece and for heat-treating the workpiece |
| US8324086B2 (en) | 2008-01-16 | 2012-12-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor substrate by laser irradiation |
| JP2009194370A (en) * | 2008-01-16 | 2009-08-27 | Semiconductor Energy Lab Co Ltd | Laser treatment equipment and semiconductor substrate preparing method |
| US9070590B2 (en) | 2008-05-16 | 2015-06-30 | Mattson Technology, Inc. | Workpiece breakage prevention method and apparatus |
| US8313989B2 (en) | 2008-10-22 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | SOI substrate and method for manufacturing the same |
| CN102741982A (en) * | 2010-02-04 | 2012-10-17 | 富士电机株式会社 | Process for production of semiconductor element, and device for production of semiconductor element |
| WO2011096326A1 (en) * | 2010-02-04 | 2011-08-11 | 富士電機システムズ株式会社 | Process for production of semiconductor element, and device for production of semiconductor element |
| JPWO2011096326A1 (en) * | 2010-02-04 | 2013-06-10 | 富士電機株式会社 | Semiconductor element manufacturing method and semiconductor element manufacturing apparatus |
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