JPS5870536A - Laser annealing method - Google Patents

Laser annealing method

Info

Publication number
JPS5870536A
JPS5870536A JP16953381A JP16953381A JPS5870536A JP S5870536 A JPS5870536 A JP S5870536A JP 16953381 A JP16953381 A JP 16953381A JP 16953381 A JP16953381 A JP 16953381A JP S5870536 A JPS5870536 A JP S5870536A
Authority
JP
Japan
Prior art keywords
sample
heated up
deg
up
temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16953381A
Inventor
Toshihiko Osada
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP16953381A priority Critical patent/JPS5870536A/en
Publication of JPS5870536A publication Critical patent/JPS5870536A/en
Application status is Pending legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To execute a laser annealing with less limitaiton in preheating temperature by floating a sample to be treated to a predetermined position by means of an inert gas flow and preheating the sample by a microwave heating method. CONSTITUTION:A sample 1 is placed on a gas injection board 4 with its poly-Si layer directed upward, and N2 of 100 deg.C is introduced from a port 6 and jetted out from holes 5. This causes the sample to float up to contact pawls. Next the sample 1 is heated up to approximately 400 deg.C by operating a high-frequency power source 3. If the sample 1 is heated up, the gas injection board does not absorb the microwave and its temperature is not raised up because it is a hollow flat construction which is made of glass plate etc. Furthermore, as the radiating direction of the high-frequency power source 3 can be limited only toward the sample 1 by an adequate designing, an XY table 2 is not also heated up. Anything other than the sample 1 is not heated up, and the sample 1 is under non-contact state except against the pawls 7, accordingly the sample can be heated up to any required temperature without thermal conduction from the sample. Then, the poly-Si is heated up to the order of 1,400 deg.C by irradiation of a CW laser 8, and a single crystal can be obtained without any influence onto the device.
JP16953381A 1981-10-22 1981-10-22 Laser annealing method Pending JPS5870536A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16953381A JPS5870536A (en) 1981-10-22 1981-10-22 Laser annealing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16953381A JPS5870536A (en) 1981-10-22 1981-10-22 Laser annealing method

Publications (1)

Publication Number Publication Date
JPS5870536A true JPS5870536A (en) 1983-04-27

Family

ID=15888253

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16953381A Pending JPS5870536A (en) 1981-10-22 1981-10-22 Laser annealing method

Country Status (1)

Country Link
JP (1) JPS5870536A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223112A (en) * 1984-04-20 1985-11-07 Agency Of Ind Science & Technol Heat treatment device for semiconductor
US4678432A (en) * 1984-11-26 1987-07-07 Dainippon Screen Mfg. Co., Ltd. Heat treatment method
GB2406710A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
JP2009194370A (en) * 2008-01-16 2009-08-27 Semiconductor Energy Lab Co Ltd Laser treatment equipment and semiconductor substrate preparing method
WO2011096326A1 (en) * 2010-02-04 2011-08-11 富士電機システムズ株式会社 Process for production of semiconductor element, and device for production of semiconductor element
US8313989B2 (en) 2008-10-22 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing the same
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60223112A (en) * 1984-04-20 1985-11-07 Agency Of Ind Science & Technol Heat treatment device for semiconductor
US4678432A (en) * 1984-11-26 1987-07-07 Dainippon Screen Mfg. Co., Ltd. Heat treatment method
GB2406710A (en) * 2000-12-04 2005-04-06 Vortek Ind Ltd Heat-treating methods and systems
GB2406710B (en) * 2000-12-04 2005-06-22 Vortek Ind Ltd Heat-treating methods and systems
US6941063B2 (en) 2000-12-04 2005-09-06 Mattson Technology Canada, Inc. Heat-treating methods and systems
US9627244B2 (en) 2002-12-20 2017-04-18 Mattson Technology, Inc. Methods and systems for supporting a workpiece and for heat-treating the workpiece
JP2009194370A (en) * 2008-01-16 2009-08-27 Semiconductor Energy Lab Co Ltd Laser treatment equipment and semiconductor substrate preparing method
US8324086B2 (en) 2008-01-16 2012-12-04 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor substrate by laser irradiation
US9070590B2 (en) 2008-05-16 2015-06-30 Mattson Technology, Inc. Workpiece breakage prevention method and apparatus
US8313989B2 (en) 2008-10-22 2012-11-20 Semiconductor Energy Laboratory Co., Ltd. SOI substrate and method for manufacturing the same
CN102741982A (en) * 2010-02-04 2012-10-17 富士电机株式会社 Process for production of semiconductor element, and device for production of semiconductor element
JPWO2011096326A1 (en) * 2010-02-04 2013-06-10 富士電機株式会社 Manufacturing apparatus manufacturing method and a semiconductor element of a semiconductor device
WO2011096326A1 (en) * 2010-02-04 2011-08-11 富士電機システムズ株式会社 Process for production of semiconductor element, and device for production of semiconductor element

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