AU2001229896A1 - A method for transferring and stacking of semiconductor devices - Google Patents

A method for transferring and stacking of semiconductor devices

Info

Publication number
AU2001229896A1
AU2001229896A1 AU2001229896A AU2989601A AU2001229896A1 AU 2001229896 A1 AU2001229896 A1 AU 2001229896A1 AU 2001229896 A AU2001229896 A AU 2001229896A AU 2989601 A AU2989601 A AU 2989601A AU 2001229896 A1 AU2001229896 A1 AU 2001229896A1
Authority
AU
Australia
Prior art keywords
stacking
transferring
semiconductor devices
semiconductor
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001229896A
Inventor
Eric Beyne
Staf Borghs
Raf Vandersmissen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Umicore NV SA
Interuniversitair Microelektronica Centrum vzw IMEC
Original Assignee
Union Miniere NV SA
Interuniversitair Microelektronica Centrum vzw IMEC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Union Miniere NV SA, Interuniversitair Microelektronica Centrum vzw IMEC filed Critical Union Miniere NV SA
Publication of AU2001229896A1 publication Critical patent/AU2001229896A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68359—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during manufacture of interconnect decals or build up layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01019—Potassium [K]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01057—Lanthanum [La]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12032—Schottky diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15192—Resurf arrangement of the internal vias
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
AU2001229896A 2000-01-28 2001-01-29 A method for transferring and stacking of semiconductor devices Abandoned AU2001229896A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US17899400P 2000-01-28 2000-01-28
US60178994 2000-01-28
PCT/BE2001/000014 WO2001056079A2 (en) 2000-01-28 2001-01-29 A method for transferring and stacking of semiconductor devices

Publications (1)

Publication Number Publication Date
AU2001229896A1 true AU2001229896A1 (en) 2001-08-07

Family

ID=22654784

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001229896A Abandoned AU2001229896A1 (en) 2000-01-28 2001-01-29 A method for transferring and stacking of semiconductor devices

Country Status (6)

Country Link
US (2) US6576505B2 (en)
EP (1) EP1252654B1 (en)
JP (1) JP5022549B2 (en)
AU (1) AU2001229896A1 (en)
DE (1) DE60129793T2 (en)
WO (1) WO2001056079A2 (en)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10361802B1 (en) 1999-02-01 2019-07-23 Blanding Hovenweep, Llc Adaptive pattern recognition based control system and method
US7247932B1 (en) 2000-05-19 2007-07-24 Megica Corporation Chip package with capacitor
US6696765B2 (en) * 2001-11-19 2004-02-24 Hitachi, Ltd. Multi-chip module
TWI288435B (en) * 2000-11-21 2007-10-11 Matsushita Electric Ind Co Ltd Semiconductor device and equipment for communication system
EP1353170A3 (en) * 2002-03-28 2004-02-04 Interuniversitair Micro-Elektronica Centrum (IMEC) Field effect transistor for sensing applications
EP1348951A1 (en) * 2002-03-29 2003-10-01 Interuniversitair Micro-Elektronica Centrum Molecularly controlled dual gated field effect transistor for sensing applications
WO2005029185A2 (en) * 2003-09-16 2005-03-31 Matsushita Electric Industrial Co., Ltd. Led lighting source and led lighting apparatus
JP4241575B2 (en) * 2004-11-05 2009-03-18 日立電線株式会社 Small antenna
EP1739736A1 (en) 2005-06-30 2007-01-03 Interuniversitair Microelektronica Centrum ( Imec) Method of manufacturing a semiconductor device
US7236408B2 (en) * 2005-07-19 2007-06-26 International Business Machines Corporation Electronic circuit having variable biasing
CN101207972B (en) * 2006-12-22 2010-05-19 鸿富锦精密工业（深圳）有限公司 Circuit board and photosensitive device using the same
TWI351764B (en) * 2007-04-03 2011-11-01 Au Optronics Corp Pixel structure and method for forming the same
US20080296708A1 (en) * 2007-05-31 2008-12-04 General Electric Company Integrated sensor arrays and method for making and using such arrays
US7696062B2 (en) 2007-07-25 2010-04-13 Northrop Grumman Systems Corporation Method of batch integration of low dielectric substrates with MMICs
US8290325B2 (en) * 2008-06-30 2012-10-16 Intel Corporation Waveguide photodetector device and manufacturing method thereof
US20100148153A1 (en) * 2008-12-16 2010-06-17 Hudait Mantu K Group III-V devices with delta-doped layer under channel region
JP5635759B2 (en) * 2009-10-15 2014-12-03 学校法人慶應義塾 Multilayer semiconductor integrated circuit device
US8313966B2 (en) * 2010-01-04 2012-11-20 The Royal Institution For The Advancement Of Learning/Mcgill University Method for fabricating optical semiconductor tubes and devices thereof
JP2013131650A (en) * 2011-12-21 2013-07-04 Fujitsu Ltd Semiconductor device and method of manufacturing the same
KR20210013790A (en) 2019-07-29 2021-02-08 삼성전자주식회사 Semiconductor memory device

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US571439A (en) * 1896-11-17 William f
US3621565A (en) 1969-06-12 1971-11-23 Nasa Fabrication of single-crystal film semiconductor devices
US4771017A (en) * 1987-06-23 1988-09-13 Spire Corporation Patterning process
JPH01140652A (en) * 1987-11-26 1989-06-01 Sharp Corp Three-dimensional semiconductor device
JPH0714028B2 (en) * 1987-11-27 1995-02-15 シャープ株式会社 Method for manufacturing three-dimensional semiconductor device
JPH0682807B2 (en) 1988-09-12 1994-10-19 株式会社東芝 Semiconductor memory
JPH0359898A (en) 1989-07-27 1991-03-14 Nec Corp Random access memory
JP2772084B2 (en) 1989-12-20 1998-07-02 株式会社東芝 Semiconductor storage device
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5300788A (en) 1991-01-18 1994-04-05 Kopin Corporation Light emitting diode bars and arrays and method of making same
JPH06267280A (en) 1992-02-19 1994-09-22 Nec Corp Method for detecting defective static ram cell
JPH0668677A (en) 1992-08-18 1994-03-11 Sanyo Electric Co Ltd Semiconductor memory device
JP3179595B2 (en) * 1992-11-12 2001-06-25 株式会社日立製作所 Semiconductor integrated circuit device and method of manufacturing the same
US5432356A (en) * 1993-04-02 1995-07-11 Fujitsu Limited Semiconductor heterojunction floating layer memory device and method for storing information in the same
US5472914A (en) * 1994-07-14 1995-12-05 The United States Of America As Represented By The Secretary Of The Air Force Wafer joined optoelectronic integrated circuits and method
JP3226422B2 (en) 1994-08-01 2001-11-05 株式会社日立製作所 Semiconductor memory device and method of detecting DC current defect in memory cell
JP3141692B2 (en) * 1994-08-11 2001-03-05 松下電器産業株式会社 Millimeter wave detector
JPH08138399A (en) 1994-11-07 1996-05-31 Hitachi Ltd Semiconductor device
NL1000329C2 (en) 1995-05-09 1996-11-12 Imec Vzw Interuniversitair Mic Millimetre or microwave oscillator device for receiver or transmitter
JPH09213918A (en) * 1996-02-01 1997-08-15 Furukawa Electric Co Ltd:The Photoelectronic integrated circuit element
US5698870A (en) * 1996-07-22 1997-12-16 The United States Of America As Represented By The Secretary Of The Air Force High electron mobility transistor (HEMT) and pseudomorphic high electron mobility transistor (PHEMT) devices with single layer integrated metal
US5821825A (en) * 1996-11-26 1998-10-13 Trw Inc. Optically controlled oscillator
EP1017113B1 (en) * 1997-01-09 2012-08-22 Nichia Corporation Nitride semiconductor device
JPH10335383A (en) * 1997-05-28 1998-12-18 Matsushita Electric Ind Co Ltd Producing method for semiconductor device
JP4085459B2 (en) * 1998-03-02 2008-05-14 セイコーエプソン株式会社 Manufacturing method of three-dimensional device
EP1041624A1 (en) * 1999-04-02 2000-10-04 Interuniversitair Microelektronica Centrum Vzw Method of transferring ultra-thin substrates and application of the method to the manufacture of a multilayer thin film device
US6410941B1 (en) * 2000-06-30 2002-06-25 Motorola, Inc. Reconfigurable systems using hybrid integrated circuits with optical ports

Also Published As

Publication number Publication date
WO2001056079A2 (en) 2001-08-02
US20030040145A1 (en) 2003-02-27
JP2003521125A (en) 2003-07-08
US6576505B2 (en) 2003-06-10
US20040029329A1 (en) 2004-02-12
DE60129793D1 (en) 2007-09-20
EP1252654B1 (en) 2007-08-08
US6812078B2 (en) 2004-11-02
EP1252654A2 (en) 2002-10-30
WO2001056079A3 (en) 2002-04-04
JP5022549B2 (en) 2012-09-12
DE60129793T2 (en) 2008-04-30

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