JP5022549B2 - Method for moving and stacking semiconductor devices - Google Patents

Description

[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a semiconductor device embedded in a wiring board.
[0002]
[Prior art]
In application fields such as the automobile industry, development of alternative technologies having low cost and equivalent performance levels is strongly demanded as the use of MMIC (monolithic millimeter wave integrated circuit) increases. In standard MMIC technology, active and passive elements are formed on a single substrate in a monolithic manner. The substrate must meet all requirements regarding semiconductor layer growth, high frequency performance, manufacturability, and cost. As an alternative technique, there is a hybrid integration of each HEMT (High Electron Mobility Transistor) and a passive element. This is formed on an inexpensive substrate. This method can dramatically reduce the consumption in the epitaxial region per chip.
[0003]
US Pat. No. 5,675,295 describes a microwave oscillation device for a receiver or transmitter. The oscillation device includes a high frequency oscillation circuit including an active device. Active devices such as vertical diodes are formed on non-doped semi-insulating GaAs substrates. The manufacturing method includes the steps of depositing a sacrificial layer on the GaAs substrate and then depositing on the sacrificial layer, and then patterning the layer (for example, a semiconductor layer) constituting the active device. Including. A specific example of a method for manufacturing such an active device is described in described by van der Zanden et al., "W-band high gain amplifier using InP dual gate HEMT technology" (InP and related materials, 1pp7, pp249-252). The vertical active device thus formed (see FIG. 1b) is separated from the non-doped GaAs substrate, for example, using an epitaxial lift-off (ELO) technique. In the epitaxial lift-off technique, the sacrificial layer sandwiched between the active device and the semi-insulating substrate is selectively etched. After separation, the active device is moved and attached to the second substrate. The second substrate may be any other substrate provided with passive elements and wiring.
[0004]
[Problems to be solved by the invention]
A first object of the present invention is to provide an excellent high frequency device comprising at least one semiconductor element connected to a passive element.
[0005]
Another object is to provide a method for manufacturing a hybrid integration of individual semiconductor devices with passive elements.
[0006]
Yet another object is to disclose a method of manufacturing a tandem solar cell.
[0007]
[Means for Solving the Problems]
The present invention relates to a method of manufacturing an apparatus comprising at least one semiconductor device. The method includes the following steps.
Forming a laminate that is substantially a semiconductor layer on a first substrate;
Dividing the entire first substrate and the laminate to obtain a plurality of sub-parts;
Attaching at least one of the sub-parts to the second substrate such that the second substrate and the laminate are in contact with each other;
Substantially removing the divided portion of the first substrate from the subpart thus mounted and forming a semiconductor device on the second substrate by the remaining portion of the subpart. And
[0008]
In one embodiment, the method according to the present invention includes the step of forming resistors, capacitors, and wirings on the second substrate after essentially removing the divided portions of the first substrate.
[0009]
In another embodiment, the method according to the present invention attaches at least one of the sub-parts to the second substrate after forming resistors and capacitors on the second substrate, and substantially And forming a wiring on the second substrate after removing the divided portion of the first substrate.
[0010]
In a preferred embodiment, the step of forming resistors, capacitors, and wiring is a multichip module dielectric (MCM-D) process flow.
[0011]
In a further preferred embodiment, the semiconductor device formed on the second substrate is a high electron mobility transistor (HEMT).
[0012]
In a further preferred embodiment, the device is an active microwave circuit.
[0013]
In a further preferred embodiment, the substrate is a germanium substrate.
[0014]
In a further preferred embodiment, after attaching the sub-part, the germanium substrate is CF.₄-O₂Remove by plasma etching.
[0015]
In a further preferred embodiment, the method according to the invention is characterized in that it comprises the step of forming an optical waveguide in the device.
[0016]
Similarly, the present invention forms a first semiconductor device using the method of the present invention, further forms a wiring pattern and a dielectric separation layer, and uses the method of the present invention on the first semiconductor device. The present invention relates to a method of manufacturing an apparatus by forming a second semiconductor device.
[0017]
In a preferred embodiment, the device is a tandem solar cell.
[0018]
Similarly, the present invention relates to an apparatus manufactured by the method of the present invention.
[0019]
DETAILED DESCRIPTION OF THE INVENTION
FIG. 1 is a schematic overview of an active device. In this example, a metamorphic HEMT structure comprising an InAlAs graded buffer layer and a double doped heterostructure is grown on a germanium substrate 1. Such stacks of semiconductor layers can be grown on various substrates such as Ge, GaAs, InP. However, it is desirable to use germanium as the substrate used to grow InGaAs / InAlAs high electron mobility transistors. A germanium substrate has many advantages over an InP substrate or a GaAs substrate. This is because germanium substrates are larger, less fragile and less expensive. However, the germanium substrate has a number of drawbacks because it has a high dielectric loss when coupling passive elements and active devices. For example, the cutoff frequency f of the transistor_TDecreases to 45 GHz. In contrast, an equivalent device formed on a GaAs substrate or InP substrate can have a cutoff frequency of 90 GHz or more. In addition, the loss of the conductor in the microwave circuit formed on the germanium substrate is very large.
[0020]
Various inexpensive substrates can be used as the second substrate. A well-known substrate technology that is very suitable is the so-called MCM-D technology, which is also used in US Pat. No. 5,675,295. MCM-D (multi-chip module-dielectric) is a technique for manufacturing a thin film, in which a thin insulating layer or a layer of conductive material is deposited on an inexpensive substrate such as glass or sapphire. A metal line in one conductive layer runs perpendicular to a metal layer in another conductive layer. In this MCM-D technology, a fixed passive element such as a resistor or a capacitor may be formed at the same time that the chip is connected on the MCM stack by the solder bump technology or the flip chip technology. Openings (for example, vias) are formed in these insulating layers, and passive elements, chips, and wire layers are wired. MCM-D technology can provide a substrate with reduced dielectric loss at a lower cost compared to standard MMIC technology. The cross-sectional view shown in FIG. 2 shows a specific example of such an inexpensive substrate technology. This MCM-D technology consists of three metal layers (15-16, 17, 18) embedded in BCBs 12 and 13. BCB 12 and 13 have low dielectric constant (r = 2.7) and low dielectric loss (loss angle tangent = 8 × 10^-4). The layer 15 is, for example, an aluminum layer having a thickness of 2 μm. Similarly, the layer 16 is an aluminum layer having a thickness of 1 μm, for example. Layer 17 can be 5 μm Ti / Cu / Ti. Layer 18 may be 2 μm Ti / Cu. Layer 19 can be Ni / Au. The thicknesses of the BCB layers 12 and 13 can each be 5 μm. The complete structure is made on a glass substrate 9 with low dielectric loss. Passive elements are formed during the stacking of the conductive and dielectric stacks. This metal-dielectric multilayer stack comprises TaN resistor 14, Ta₂O₅A capacitor (10-11), an inductor, and an arranged microwave device are provided. TaN resistors are mainly used as 50 ohm high frequency termination. In order to realize a large capacity, a Ta capacitor is used. If it is a small-capacitance capacitor, a parallel plate BCB capacitor may be used. The TaN resistor and the Ta capacitor can be used to stably bias the active element.
[0021]
The invention will be described in detail later with reference to the accompanying figures. However, it will be apparent to those skilled in the art that several other embodiments and other ways of carrying out the invention can be devised. Further, the spirit and technical scope of the present invention are not limited to the words of the appended claims.
[0022]
The first invention discloses the integration of ultra-thin semiconductor devices having passive elements on an inexpensive substrate having good dielectric properties. The semiconductor device includes a stacked body (for example, a stacked body of semiconductor layers) grown on a first substrate. After forming the semiconductor device, the first substrate is singulated (ie, divided into several parts or chips) and the chip is transferred to the second substrate. After removing the first substrate, the attached chip is connected to passive elements on this second substrate using wiring techniques. Finally, an active microwave circuit is obtained.
[0023]
As a preferred embodiment of the first invention, the metamorphic HEMT grown on the germanium substrate is embedded in the MCM-D wiring substrate. In this embodiment, as shown in FIGS. 3a-e, the HEMT is back-connected to the MCM-D line. With this technology, the advantage of a substrate that is inexpensive and has good growth can be utilized in an active microwave circuit having high performance.
Germanium substrate is 50x50mm²And a thickness of 200 μm. Although a high-resistance germanium substrate can be used, the germanium substrate 1 having a resistivity of 50 ohm cm is selected from the viewpoint of cost while ignoring restrictions on the purity of the material. As described below, germanium only acts as a sacrificial layer substrate, so germanium conductivity is not critical to the performance of the final device or circuit. The layer structure formed by MBE (Molecular Beam Epitaxy) is shown in FIG. It is very similar to that grown on GaAs. After the first GaAs nucleation layer 2, the buffer layer 3 is changed from AlAs to In_{. 57}Al_{. 43}Change gradually to As. Subsequently, in order to form the stress relaxation layer 4, conversely, In_{. 52}Al_{. 48}A step of gradually changing to As is performed. Double Si delta doped structure (upper doping level is 5 × 10¹²cm^-2And the lower doping level is 2.5 × 10¹²cm^-2It is. ) Is grown on this virtual substrate in lattice matching. Since the lattice constant of GaAs grown on the germanium substrate is converted to the lattice constant of InP by the relatively thick buffer layer 3, the substrate is called virtual. The HEMT active layer is formed as if it were grown on a complete InP substrate. The HEMT active layer stack includes a buffer layer 5a, a spacer 5b, a channel layer 6, a spacer 7b, and a Schottky layer 7a. Finally, Si doped In for the formation of ohmic contacts_{. 53}Ga_{. 47}A capping layer consisting of an As layer 8 is deposited. Wet mesa etching, Ni / Au / Ge ohmic contact (20a, 20b) deposition and alloying, and Cr / Au c-gate 20c metal deposition are performed to obtain the active area of the HEMT device. The germanium substrate is divided to produce individual devices or device arrays. Since a contact layer is applied in this process step, several devices may be connected to the array. FIG. 1b shows a cross-sectional view of the HEMT device after removing the germanium substrate and the buffer layer. The contact pads for the source 20a and drain 20b are open and can be connected from the back side. For example, in known techniques such as US Pat. No. 5,675,295, the device shown in FIG. 1b may be moved to another substrate.
[0024]
Germanium can be used as a substrate material for growing metamorphic devices that have a high level of performance and good DC behavior compared to GaAs-based devices. However, germanium is rarely used as a substrate for making high-frequency circuits with satisfactory performance. Cutoff frequency f for germanium-based devices_TAnd the maximum vibration frequency f_max(45 GHz and 68 GHz, respectively) is the frequency of a similar GaAs-based device (f_T= 90 and f_maxTherefore, it is necessary to remove the germanium substrate and eliminate the parasitic capacitance generated from the conductive germanium. In this preferred embodiment, an MCM-D substrate such as glass is used. This is because such a substrate is inexpensive and has good dielectric properties. The main disadvantage of such substrate technology is the lack of active material for making high frequency devices such as microwave circuits. To install a complete microwave circuit, the active device is attached to the passive microwave MCM-D using a flip chip.
[0025]
As shown in FIG. 3a, the HEMT 21 (see FIG. 3e) is flip-chip connected to the glass substrate 9 to integrate the InAlAs / InGaAs HEMT in the MCM-D stack. After forming the device and dividing the germanium substrate to form individual HEMT devices, the HEMT device 21 on the germanium substrate 1 is transferred to the MCM-D substrate 9. Since the relatively thick germanium substrate 9 is present while moving, the HEMT device becomes very easy to handle and the moving process is more suitable for industrial applications.
[0026]
In order to bond between the glass substrate 9 and the HEMT 21, a thin uncured BCB layer 22 is used. For example, it is preferable to deposit a thin BCB layer of 1 μm or less on the substrate 9 by spin coating. The HEMT device 21 is turned upside down and flip-chip connected to this adhesive layer. The BCB layer is cured to further strengthen the bond (FIG. 3a). Since the BCB layer does not cause a chemical reaction with other materials used in the MCM-D technology, it is used as an adhesive layer.
[0027]
After mounting the HEMT device and germanium substrate stack on the MCM-D substrate, CF₄-O₂The germanium substrate 1 is removed by plasma etching (see FIG. 3b). CF₄And O₂Highly selective etching process technology based on reactive ion etching (RIE) of plasma has been developed. This RIE is a direct method compared to a method of thinning GaAs. The setting of this selective etching process is as follows. CF₄Gas flow rate 100 sccm, O₂The gas flow rate is 10 sccm and the pressure is 300 mTorr. Etching the germanium substrate is performed at 30 ° C. using 50 watts of RF input power. The etching rate of germanium is generally 3.5 μm / min. In that case, it is necessary to etch for about 60 minutes to remove the 200 μm thick substrate completely, leaving only the 2 μm thick epitaxial layer. Assuming a selectivity to the GaAs buffer layer 2 of about 1/100, 200 μm germanium is etched in about 70 minutes.
[0028]
The germanium in the reactive gas stream present in the exhaust of the RIE process chamber may be captured and reused. Alternatively, the germanium substrate may be grown again using the reused germanium. As can be seen from FIG. 3b, the BCB layer not covered by the HEMT stack is also etched during the RIE step, but the glass substrate is essentially unaffected. The GaAs buffer layer 2 is made of non-selective H₂SO₄-H₂O₂Removed by solution. This wet etching step thins the HEMT device including the contact pads to approximately 3-5 μm, preferably 3 μm or less, resulting in the structure of FIG. 3b. Only the InAlAs / InGaAs HEMT layer (3-8) and the gold contact 20 remain. Such thin structures can be integrated into the MCM-D stack without disturbing the planarization properties of the MCM-D structure. Further processing on the MCM-D stack or fixing the chip on the MCM-D substrate is also loosened. The height of the step that can be done by embedding the moved HEMT device is less than the thickness of the applied BCB layer. The next step is to install Ta and TaN structures on MCM-D to form resistor 14 and capacitor (10-11). The bottom aluminum layer 15 covers the HEMT structure and protects the HEMT structure during these process steps (FIG. 3c).
[0029]
After patterning the Ta and TaN structures, a photoresist layer (not shown in FIG. 3d) is deposited and patterned to cover the Ta / TaN structure (14, 10) and the transistor active region (23). To do. By using a phosphorous (V) acid solution, only the active region of the transistor is left, and the contacts (20a, 20b) are not in contact (FIG. 3d). The contacts are initially formed on top of the HEMT stack before moving them to the second substrate 9. As the last step, in order to install the passive structure, the BCB layer (12, 13) and the copper layer (17, 18) are laminated and patterned. A metal coating (17, 18-19) is used to connect to the HEMT. This ultimately gives an active microwave MCM-D structure (FIG. 3e). A Ni / Au component layer 19 is formed to bond chips or other elements on the MCM-D stack. The chip may further be coupled with a process signal from the active microwave MCM-D structure or a process signal to the MCM-D structure.
[0030]
In the second embodiment of the present invention, after forming a resistor and a capacitor, a metamorphic HEMT grown on a germanium substrate is embedded in the MCM-D wiring substrate. In the second embodiment, a flip chip type of wiring using indium is optimized and used. Indium is used as a bonding material rather than a bump material.
[0031]
In this embodiment, HEMT flip-chip is performed on a glass substrate using indium (In) as a bonding material, and InAlAs / InGaAs HEMT integration is performed in MCM-D. This technique is illustrated in FIGS. 4 (ae).
[0032]
First, a TaN layer 14 and a Ta layer (10-11) are provided using a standard MCM-D process. This process provides an aluminum bottom contact 25 for the HEMT device (FIG. 4a). A thin film layer 26 of indium is deposited on aluminum and patterned (FIG. 4b). For example, an indium thin film layer of 300 nm or less is used as a mechanical and electrical wiring layer between the MCM-D substrate and the HEMT. The HEMT 21 is placed on the indium bonding layer 26 in a flip chip connection and then heated to 150 ° C. (FIG. 4c). Next, as described above, CF selective to the GaAs layer 2 is obtained.₄-O₂The germanium substrate 1 is removed by plasma etching. The GaAs buffer layer is non-selective H as described above.₂SO₄-H₂O₂Remove with solution. Further, the HEMT device is thinned to about 3-5 μm or less to obtain the structure of FIG. As a final step, BCB (12, 13) and copper layers (17, 18-19) are stacked and patterned to install a passive structure. Connect the HEMT using copper metallization. This eventually yields an active microwave MCM-D structure as shown in FIG. 4e.
[0033]
FIG. 5 shows a top view of such a structure by SEM. It shows the transistor 21 integrated on the MCM-D substrate 9. Contacts 25 are around device 21. There is a small rectangle 36 that is used to align the HEMT on the MCM-D structure. As shown in FIG. 4d, the active area is isolated by the final etch.
[0034]
The hybrid integration as described above can be used for many applications in the microwave or millimeter wave region. For example, by integrating two HEMT devices, a short range radar system can be obtained. The system may be used in a collision avoidance system. In FIG. 6, an outline of a short range radar system based on a frequency modulation technique is given. The oscillator 29 can adjust the frequency and send a modulated frequency signal to the antenna. The signal is radiated forward by the antenna. The radiation is reflected by a metal object such as a car and reaches the second antenna. The signal received by the second antenna is mixed with the transmitted signal at 30 to generate a low frequency beat signal. The frequency is proportional to the distance to the object and the approach speed. To create a complete system within MCM-D, the MCM-D technology is extended with backside process steps, and patch antenna 27 (patch antenna 27 is indicated by a coplanar line 28). Create in the MCM-D layout. Such patch antennas can be used to radiate a modulated frequency signal or to detect a reflected signal. When using the concept of self-oscillating mixer to make a Doppler radar, in principle, one HEMT is sufficient. In such a structure, this single HEMT is used to simultaneously generate a microwave oscillator and down conversion of the reflected signal. However, in this circuit, a trade-off occurs between the output power of the oscillator and the generation of noise in the mixer. This limits the radar range to a few meters. By using two transistors (one transistor to the oscillator and the other to the mixer 30) while optimizing the bias and matching of both devices and having the appropriate noise waveform for the mixer Sufficient oscillator output power can be obtained. This is the configuration given in FIG. All microwave circuits (eg, matching circuit, bias circuit, antenna, etc.) can be realized by MCM-D technology. Two HEMT devices may be integrated using a flip chip which is one of the aforementioned options. According to one of the above options, quasi-monolithic technology by embedding HEMT and back-facing should eliminate as much wiring parasitic effects as possible, especially at higher millimeter wave frequencies. It is.
[0035]
In another embodiment of the invention, an inexpensive on-board optical wiring system is disclosed. The semiconductor device grown on the first substrate may be transferred to the second substrate on which the optical waveguide is formed. A semiconductor device is used as an optical receiver / transmitter to convert an electrical signal into an optical signal, or vice versa.
[0036]
As disclosed in the previous embodiment, the HEMT device may be integrated and embedded in a circuit formed on the MCM substrate or in the composition layer. With MCM technology such as MCM-D, a platform that combines different technologies such as III-V or BiCMOS 31 can be provided. This technique allows each device to be integrated on a single substrate with optimized characteristics with respect to data process and operating frequency, as shown in FIG. As described above, a chip may be attached to the MCM-D stack in response to a process signal from an active microwave MCM-D structure equipped with a HEMT device or a process signal to the MCM-D structure. Data exchange between elements in the MCM-D stack or on the MCM-D stack is generally performed using electrical signals. However, if this data transmission is performed with light signals, a very high data transmission rate is obtained. In order to perform such transmission, a “light channel”, an “optical waveguide”, and a “conversion device” are required. The “light channel” moves light from “a certain conversion device” to “another conversion device”. The “conversion device” converts a light signal received from the “light channel” into an electric signal that can be processed by a general electric circuit.
[0037]
The “light channel” is formed by forming a trench made of the first material (core layer) in the substrate of the second material (cladding layer). Both materials have different optical properties such as refractive index n. A schematic cross-section for the operation of such a light channel is given in FIG. The light transmitted to the first material (core layer) 35 cannot be completely confined within the first material. Some of the electromagnetic waves (32: broken line circle) (light is an electromagnetic wave signal) spreads into the cladding layer 13 outside this trench. The exponential decay portion of the light wave is called the “evanescent field”. It exists outside the core of the optical waveguide. Various types of BCB (benzo-cyclobutene) layers (12, 13) used to electrically insulate the conductive layers in the MCM-D metal dielectric stack are available. Each type has different optical properties. An optical waveguide or an optical waveguide may be made using the difference in optical characteristics of various BCBs. An overview of the optical properties of BCB is given in “Manufacturing and Properties of Single-Mode Polymer Optical Waveguides” in the Doctoral Dissertation at the University of Trondheim (Norway, 1998), written by Daniel Schneider. . BCB can use the type of 4022 as the first material (core: 35), and the type of 3022 can also be used as the second material (cladding: 13). Since the first type 4022 is similar to a photosensitive resin, wet development can be performed after exposure to light. The second type 3022 is not photosensitive and must be patterned using standard exposure and etching techniques. In general, this type of 3022 is used as a dielectric layer in an MCM stack. For example, when a via such as 33 is made and connected to the underlying metal layer, the BCB layer is patterned. In this staircase or stage in the MCM-D process, trenches can be simultaneously formed to arrange the optical waveguides. After removing the resistor used during this patterning step, the trench may be filled with BCB4022 of an optically different type. For example, the BCB material can be filled by spin coating. Subsequently, the BCB is etched back, leaving the trench filled with BCB4022. Since BCB4022 has a resin-like property, BCB4022 is spin-coated on the upper surface of the bottom surface (13a) of the cladding layer (13), exposed using a mask, and wet so that only the line of the optical waveguide 35 remains. You may develop. Later, the remaining part of the cladding layer (13b) is deposited to planarize the entire structure.
[0038]
In the specific example shown in FIG. 8, the photo HEMT is placed on the MCM-stack, and the optical waveguide is formed on the BCB layer 13. Another method is shown in FIG. On the MCM-D substrate 9, a stack of the clad layer 34 provided with the optical waveguide 35 is first formed to produce an optical waveguide. The process as shown in FIGS. 3a-e may be continued on top of this stack.
[0039]
HEMT devices have photosensitive properties. For example, the current between the drain and source of the HEMT can be adjusted to some extent by the incident light. Therefore, no special process for forming a dedicated light converter is necessary. This is because such a “photosensitive transistor” can be formed at the same time as the HEMT transistor used in the mixer 29 and the down converter 30 and is equivalent thereto. As for the HEMT used as the photosensitive device, only the wiring is different from the HEMT used as the electronic device. Only the wiring needs to be designed, and there is no need to change the process technology. The high frequency device and the optical device can be formed on the same substrate having the optical waveguide. The substrate is preferably an MCM-D substrate.
[0040]
If the HEMT device is processed and moved in a hybrid manner on top of the MCM-D stack, similar to an embodiment of the present invention, on a “light channel” as shown in FIG. A gate of the device 20c may be installed. As can be seen in this figure, some of the light penetrates into the device heterolayer (5a-8) and affects the gate leakage current and the like. This intrusion light is absorbed by these semiconductor layers to form electron-hole pairs. The HEMT device is made of a III-V compound semiconductor material.
[0041]
In another embodiment of the present invention, it is disclosed to stack ultra-thin semiconductor devices that form a tandem solar cell.
[0042]
If the semiconductor device is grown on the first sacrificial substrate and split and then moved onto the second substrate, this technique can be used to obtain a stack of semiconductor slices. In a tandem solar cell, slices of semiconductor material with different band gaps are stacked. Each slice includes a semiconductor or compound semiconductor material having a different bandgap than the material present in the other slices, so that each slice is sensitive to a specific range of electromagnetic radiation. Standard silicon solar cells are only sensitive to light with quantum energy greater than the silicon bandgap (1.1 eV). On the other hand, for example, a tandem solar cell having a slice of silicon and a slice of GaAs can detect not only light in the wavelength range of 1.1 eV but also light having a longer wavelength. This is because the band gap of GaAs is smaller than that of silicon (about 0.92 eV). The overall efficiency of such a tandem solar cell is higher than a single solar cell. According to the invention, several layers of semiconductor material can be stacked. FIG. 11 shows this embodiment. Both sides of the semiconductor slice (40, 41) are connected to a set of vertical metal wires (44, 43), and both sides of the junction formed in these semiconductor slices are connected. To connect these two slices (each slice forming a series pn junction), a metal layer in one direction is connected to a metal wire in the same direction in a higher layer. Connect with. The metal wire 44 is connected through the opening 45 of the insulating layer 42. The metal wire 43 is connected through the opening 46 of the insulating layer 42. The insulating layer electrically insulates the pn junction and the wire. FIG. 12 is an electrically equivalent schematic diagram of the structure given in FIG. It clearly represents the parallel connection of pn junctions. Other embodiments of the invention may be used to form the stack given in FIG. The semiconductor slice 40 may be grown on another substrate to create the desired pn junction. The substrate can be divided into slices having a desired size. The device can be moved to the second substrate 47 and attached to this point using a BCB adhesion layer. As disclosed in other embodiments, for example, a first substrate on which a semiconductor slice has been formed can be removed during a dry etching step. The metal wire can be formed before or after the chip 40 is attached. A second BCB layer is deposited on the first metal wire 44 and the slice 40. The second metal wire 43 is deposited in a direction substantially perpendicular to the direction of the first metal wire. This second metal wire is connected to the opposite side of the pn junction formed in the semiconductor slice. Again, a BCB layer is deposited to electrically insulate different levels of metal wire and to act as an adhesive layer, fixing the second slice 41 transferred to this stack. The order of the above processes may be repeated. An opening can be formed in the dielectric layer 42 and connected to an appropriate level of metal wire, for example, to obtain a series connection or a parallel connection of devices.
[Brief description of the drawings]
FIG. 1 is a cross-sectional view of a metamorphic HEMT structure grown on a germanium substrate in the prior art.
a: Cross-sectional view of the device stack after deposition.
b: A cross-sectional view of the device after removing the germanium substrate and the buffer layer.
FIG. 2 is a diagram schematically showing MCM-D technology in the prior art.
FIG. 3 is a diagram illustrating a method of embedding an active device (for example, HEMT) in a wiring technology (for example, MCM-D). This comprises a passive device according to an embodiment of the invention.
FIG. 4 is a diagram illustrating a method of embedding an active device (for example, HEMT) in a wiring technique (for example, MCM-D). This comprises a passive device according to another embodiment of the invention.
FIG. 5 is an SEM view from above of a transistor integrated according to an embodiment of the present invention.
FIG. 6 is a schematic representation of a system assembled for a short range radar system, which shows an industrial application of the present invention.
FIG. 7 is a cross-sectional view schematically illustrating a microwave patch antenna in the MCM-D technology, which shows an industrial application of the present invention.
FIG. 8 is a diagram showing the integration of elements processed by the same technique or different techniques on the MCM (-D) substrate, showing an embodiment of the present invention.
FIG. 9 is a cross-sectional view showing a photodetector HEMT and an optical waveguide, showing an embodiment of the present invention.
FIG. 10 illustrates forming an optical waveguide in a stack of BCB layers and further embedding a photodetector HEMT, in accordance with an embodiment of the present invention.
FIG. 11 is a cross-sectional view schematically illustrating a tandem solar cell according to an embodiment of the present invention.
12 is an electronic circuit diagram of the cross-sectional view given in FIG.

Claims (10)

A method of manufacturing an apparatus comprising at least one semiconductor device (21), comprising:
Comprising the steps of: a first substrate (1) on, to form a laminate consisting of a semi-conductor layer,
Dividing the first substrate (1) and the entire laminate to obtain a plurality of sub-parts;
Attaching at least one of the sub-parts to the second substrate (9) such that the laminate contacts the second substrate;
From each of the sub-parts attached as described above, before Symbol removed divided portions of the first substrate, the remaining portion of the sub-part, and forming a semiconductor device (21) to said second substrate ,
A manufacturing method comprising: After removing the portion of the first substrate which is pre-Symbol split (1), on the second substrate (9), register (14), a capacitor (10, 11), and the wiring (17, 18, 19) The method of claim 1, comprising the step of: Forming a resistor (14) and a capacitor (10, 11) on the second substrate before attaching at least one of the sub-parts to the second substrate (9);
Wherein after removal of Ri taken part of the divided first substrate (1), according to the second substrate, to claim 1, characterized in that it comprises a step of forming a wiring (17, 18, 19) the method of. Wherein the semiconductor devices formed on the second substrate (21) A method as claimed in any one of the claims 3, characterized in that the high electron mobility transistor (HEMT). The method as claimed in any one of the claims 4, wherein said device is characterized in that it is an active microwave circuit. Said first substrate (1) A method according to any one of claims of claims 1 to 5, wherein the germanium substrate. The method according to claim 6 , wherein the germanium substrate is removed by CF ₄ —O ₂ plasma etching after the subparts are attached. The method according to any one of claims of claims 1 7, characterized in that it comprises a step of forming an optical waveguide in said apparatus. Forming a first semiconductor device (40) using the method of claim 1;
Form a wiring pattern and dielectric insulator,
A method of manufacturing an apparatus by forming a second semiconductor device (41) on the first semiconductor device by the method of claim 1. The method of claim 9 , wherein the device is a tandem solar cell.

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