AU2001214169A1 - Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device - Google Patents

Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device

Info

Publication number
AU2001214169A1
AU2001214169A1 AU2001214169A AU1416901A AU2001214169A1 AU 2001214169 A1 AU2001214169 A1 AU 2001214169A1 AU 2001214169 A AU2001214169 A AU 2001214169A AU 1416901 A AU1416901 A AU 1416901A AU 2001214169 A1 AU2001214169 A1 AU 2001214169A1
Authority
AU
Australia
Prior art keywords
magnetic
method therefor
refcording
thin film
production method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001214169A
Other languages
English (en)
Inventor
David Djayaprawira
Hiroki Shoji
Migaku Takahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of AU2001214169A1 publication Critical patent/AU2001214169A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/08—Microstrips; Strip lines
    • H01P3/088—Stacked transmission lines
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
    • G11B5/3909—Arrangements using a magnetic tunnel junction
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/66—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers
    • G11B5/676—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent the record carriers consisting of several layers having magnetic layers separated by a nonmagnetic layer, e.g. antiferromagnetic layer, Cu layer or coupling layer
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/73—Base layers, i.e. all non-magnetic layers lying under a lowermost magnetic recording layer, e.g. including any non-magnetic layer in between a first magnetic recording layer and either an underlying substrate or a soft magnetic underlayer
    • G11B5/7368—Non-polymeric layer under the lowermost magnetic recording layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
    • H01F10/14—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys containing iron or nickel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
    • H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
    • H01F10/18—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3286—Spin-exchange coupled multilayers having at least one layer with perpendicular magnetic anisotropy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B2005/0002—Special dispositions or recording techniques
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/1278—Structure or manufacture of heads, e.g. inductive specially adapted for magnetisations perpendicular to the surface of the record carrier
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/31—Structure or manufacture of heads, e.g. inductive using thin films
    • G11B5/3109—Details
    • G11B5/313—Disposition of layers
    • G11B5/3143—Disposition of layers including additional layers for improving the electromagnetic transducing properties of the basic structure, e.g. for flux coupling, guiding or shielding
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
    • G11B5/3967—Composite structural arrangements of transducers, e.g. inductive write and magnetoresistive read
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/3222—Exchange coupled hard/soft multilayers, e.g. CoPt/Co or NiFe/CoSm
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F17/00—Fixed inductances of the signal type 
    • H01F17/0006—Printed inductances
    • H01F17/0033—Printed inductances with the coil helically wound around a magnetic core
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/11—Magnetic recording head
    • Y10T428/115—Magnetic layer composition

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Magnetic Films (AREA)
  • Magnetic Heads (AREA)
  • Hall/Mr Elements (AREA)
  • Measuring Magnetic Variables (AREA)
  • Magnetic Record Carriers (AREA)
AU2001214169A 2000-05-31 2000-11-20 Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device Abandoned AU2001214169A1 (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2000163822 2000-05-31
JP2000-163822 2000-05-31
JP2000321757 2000-10-20
JP2000-321757 2000-10-20
PCT/JP2000/008167 WO2001093286A1 (fr) 2000-05-31 2000-11-20 Couche mince magnetique, son procede de production, son procede d'evaluation et tete magnetique dans laquelle elle est utilisee, dispositif d'enregistrement magnetique et dispositif magnetique

Publications (1)

Publication Number Publication Date
AU2001214169A1 true AU2001214169A1 (en) 2001-12-11

Family

ID=26593129

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001214169A Abandoned AU2001214169A1 (en) 2000-05-31 2000-11-20 Magnetic thin film, production method therefor, evaluation method therefor and magnetic head using it, magnetic refcording device and magnetic device

Country Status (5)

Country Link
US (1) US6841259B1 (ja)
JP (1) JP4531331B2 (ja)
AU (1) AU2001214169A1 (ja)
TW (1) TW503391B (ja)
WO (1) WO2001093286A1 (ja)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3653007B2 (ja) * 2001-05-14 2005-05-25 株式会社日立製作所 垂直磁気記録媒体とその製造方法および磁気記憶装置
JP3971697B2 (ja) * 2002-01-16 2007-09-05 Ｔｄｋ株式会社 高周波用磁性薄膜及び磁気素子
JP2005025890A (ja) * 2003-07-04 2005-01-27 Fujitsu Ltd 磁気ヘッド用磁性膜
US7372117B2 (en) * 2004-09-16 2008-05-13 Industrial Technology Research Institute Magneto-resistance transistor and method thereof
US7235851B2 (en) * 2004-09-16 2007-06-26 Industrial Technology Research Institute Spin transistor and method thereof
JP2006268984A (ja) * 2005-03-25 2006-10-05 Nihon Micro Coating Co Ltd 垂直磁気記録ディスク及びその製造方法
US7879466B2 (en) 2005-03-30 2011-02-01 Tohoku University Perpendicular magnetic recording medium, and perpendicular magnetic recording and reproducing apparatus
WO2006135034A1 (en) * 2005-06-13 2006-12-21 Tohoku University Magnetic recording medium and magnetic recording and reproducing apparatus
US7502209B2 (en) 2005-10-24 2009-03-10 Hitachi Global Storage Technologies Netherlands B.V. Read sensors having nitrogenated hard bias layers and method of making the same
JP4101836B2 (ja) * 2005-12-26 2008-06-18 昭和電工株式会社 磁気記録媒体、その製造方法および磁気記録再生装置
US9978413B2 (en) 2006-06-17 2018-05-22 Dieter Suess Multilayer exchange spring recording media
US10068689B2 (en) 2011-08-17 2018-09-04 Regents Of The University Of Minnesota Iron nitride permanent magnet and technique for forming iron nitride permanent magnet
US20160159653A1 (en) * 2012-01-04 2016-06-09 Virginia Commonwealth University High anisotropy nanoparticles
US8817417B2 (en) 2012-12-26 2014-08-26 Tdk Corporation Perpendicular magnetic write head and magnetic recording device
KR101665648B1 (ko) 2013-06-27 2016-10-12 리전츠 오브 더 유니버시티 오브 미네소타 질화철 재료 및 질화철 재료를 포함하는 자석
JP2017517630A (ja) 2014-03-28 2017-06-29 リージェンツ オブ ザ ユニバーシティ オブ ミネソタ コーティングされたナノ粒子を含む鉄窒化物磁性材料
US9994949B2 (en) 2014-06-30 2018-06-12 Regents Of The University Of Minnesota Applied magnetic field synthesis and processing of iron nitride magnetic materials
US10072356B2 (en) * 2014-08-08 2018-09-11 Regents Of The University Of Minnesota Magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16Z2 and α″-Fe16N2, where Z includes at least one of C, B, or O
CA2957732A1 (en) 2014-08-08 2016-02-11 Regents Of The University Of Minnesota Forming iron nitride hard magnetic materials using chemical vapor deposition or liquid phase epitaxy
US10573439B2 (en) * 2014-08-08 2020-02-25 Regents Of The University Of Minnesota Multilayer iron nitride hard magnetic materials
US10002694B2 (en) * 2014-08-08 2018-06-19 Regents Of The University Of Minnesota Inductor including alpha″-Fe16Z2 or alpha″-Fe16(NxZ1-x)2, where Z includes at least one of C, B, or O
US12018386B2 (en) 2019-10-11 2024-06-25 Regents Of The University Of Minnesota Magnetic material including α″-Fe16(NxZ1-x)2 or a mixture of α″-Fe16Z2 and α″-Fe16N2, where Z includes at least one of C, B, or O

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KR960004065B1 (ko) * 1986-05-30 1996-03-26 가부시기가이샤 히다찌세이사꾸쇼 자성체막 및 이것을 사용한 자기 헤드
JPS63237208A (ja) * 1987-03-24 1988-10-03 Ube Ind Ltd 垂直磁気記録媒体
JPS63277755A (ja) * 1987-05-07 1988-11-15 Matsushita Electric Ind Co Ltd 薄膜の製造方法
US5006395A (en) * 1987-05-12 1991-04-09 Matsushita Electric Industrial Co., Ltd. Iron carbide thin film magnetic recording medium
JPS6482310A (en) * 1987-09-24 1989-03-28 Sumitomo Spec Metals Composite type magnetic head
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JPH01264919A (ja) * 1988-04-15 1989-10-23 Matsushita Electric Ind Co Ltd 炭化鉄薄膜の製造方法
JPH0242702A (ja) * 1988-04-28 1990-02-13 Matsushita Electric Ind Co Ltd 軟磁性薄膜およびこれを用いた磁気ヘッド
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JPH02137712A (ja) * 1988-11-16 1990-05-28 Daikin Ind Ltd 炭化鉄薄膜
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EP0619776A4 (en) * 1992-01-03 1994-12-07 Conner Peripherals Inc MAGNETIC RECORDING MEDIA COMPRISING SOFT MAGNETIC MATERIAL.
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JP3873375B2 (ja) * 1997-06-23 2007-01-24 株式会社日立製作所 強磁性金属化合物膜
JPH11186033A (ja) * 1997-12-17 1999-07-09 Hitachi Ltd 強磁性金属化合物膜及びその作製方法並びに磁気記録媒体
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JP2000150233A (ja) * 1998-09-03 2000-05-30 Matsushita Electric Ind Co Ltd 磁性膜とその製造方法
JP3110398B2 (ja) * 1998-10-23 2000-11-20 株式会社半導体エネルギー研究所 微結晶シリコン膜の作製方法

Also Published As

Publication number Publication date
TW503391B (en) 2002-09-21
WO2001093286A1 (fr) 2001-12-06
JP4531331B2 (ja) 2010-08-25
US6841259B1 (en) 2005-01-11

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