AU1927501A - Power semiconductor die attach process using conductive adhesive film - Google Patents

Power semiconductor die attach process using conductive adhesive film

Info

Publication number
AU1927501A
AU1927501A AU19275/01A AU1927501A AU1927501A AU 1927501 A AU1927501 A AU 1927501A AU 19275/01 A AU19275/01 A AU 19275/01A AU 1927501 A AU1927501 A AU 1927501A AU 1927501 A AU1927501 A AU 1927501A
Authority
AU
Australia
Prior art keywords
adhesive film
conductive adhesive
power semiconductor
semiconductor die
die attach
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU19275/01A
Other languages
English (en)
Inventor
Mark Pavier
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies Americas Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of AU1927501A publication Critical patent/AU1927501A/en
Abandoned legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27Manufacturing methods
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836Wafer tapes, e.g. grinding or dicing support tapes
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    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
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    • H01L24/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
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    • H01L2221/683Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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    • H01L2224/291Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29101Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2224/8319Arrangement of the layer connectors prior to mounting
    • H01L2224/83191Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
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    • H01L2224/83Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838Bonding techniques
    • H01L2224/8385Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83856Pre-cured adhesive, i.e. B-stage adhesive
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    • H01L2924/1306Field-effect transistor [FET]
    • H01L2924/13091Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
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    • H01L2924/11Device type
    • H01L2924/14Integrated circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)
AU19275/01A 1999-11-24 2000-11-22 Power semiconductor die attach process using conductive adhesive film Abandoned AU1927501A (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US16745699P 1999-11-24 1999-11-24
US60167456 1999-11-24
PCT/US2000/032176 WO2001039266A1 (en) 1999-11-24 2000-11-22 Power semiconductor die attach process using conductive adhesive film

Publications (1)

Publication Number Publication Date
AU1927501A true AU1927501A (en) 2001-06-04

Family

ID=22607438

Family Applications (1)

Application Number Title Priority Date Filing Date
AU19275/01A Abandoned AU1927501A (en) 1999-11-24 2000-11-22 Power semiconductor die attach process using conductive adhesive film

Country Status (6)

Country Link
JP (1) JP3771843B2 (ja)
KR (1) KR100468233B1 (ja)
CN (1) CN1187804C (ja)
AU (1) AU1927501A (ja)
TW (1) TW501207B (ja)
WO (1) WO2001039266A1 (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6620651B2 (en) * 2001-10-23 2003-09-16 National Starch And Chemical Investment Holding Corporation Adhesive wafers for die attach application
US6781352B2 (en) 2002-12-16 2004-08-24 International Rectifer Corporation One cycle control continuous conduction mode PFC boost converter integrated circuit with integrated power switch and boost converter
CN100463114C (zh) * 2003-12-15 2009-02-18 古河电气工业株式会社 晶片加工带及其制造方法
JP2006114649A (ja) * 2004-10-14 2006-04-27 Fuji Electric Device Technology Co Ltd 半導体装置の製造方法およびその製造装置
CN101807531A (zh) * 2010-03-30 2010-08-18 上海凯虹电子有限公司 一种超薄芯片的封装方法以及封装体

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2994510B2 (ja) * 1992-02-10 1999-12-27 ローム株式会社 半導体装置およびその製法
US5286679A (en) * 1993-03-18 1994-02-15 Micron Technology, Inc. Method for attaching a semiconductor die to a leadframe using a patterned adhesive layer
JP3467611B2 (ja) * 1995-09-29 2003-11-17 日本テキサス・インスツルメンツ株式会社 半導体装置の製造方法
US5776799A (en) * 1996-11-08 1998-07-07 Samsung Electronics Co., Ltd. Lead-on-chip type semiconductor chip package using an adhesive deposited on chip active surfaces at a wafer level and method for manufacturing same

Also Published As

Publication number Publication date
JP3771843B2 (ja) 2006-04-26
CN1399794A (zh) 2003-02-26
KR100468233B1 (ko) 2005-01-26
KR20020059782A (ko) 2002-07-13
TW501207B (en) 2002-09-01
CN1187804C (zh) 2005-02-02
WO2001039266A1 (en) 2001-05-31
JP2003515929A (ja) 2003-05-07
WO2001039266A9 (en) 2002-04-18

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MK6 Application lapsed section 142(2)(f)/reg. 8.3(3) - pct applic. not entering national phase