AU1421388A - Process and device for the surface treatment of semiconductors by particle bombardment - Google Patents

Process and device for the surface treatment of semiconductors by particle bombardment

Info

Publication number
AU1421388A
AU1421388A AU14213/88A AU1421388A AU1421388A AU 1421388 A AU1421388 A AU 1421388A AU 14213/88 A AU14213/88 A AU 14213/88A AU 1421388 A AU1421388 A AU 1421388A AU 1421388 A AU1421388 A AU 1421388A
Authority
AU
Australia
Prior art keywords
semiconductors
surface treatment
particle bombardment
bombardment
particle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU14213/88A
Other languages
English (en)
Inventor
Hans Oechsner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=6323319&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=AU1421388(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Individual filed Critical Individual
Publication of AU1421388A publication Critical patent/AU1421388A/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32357—Generation remote from the workpiece, e.g. down-stream
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H10P32/1204—
    • H10P50/20—

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Plasma Technology (AREA)
AU14213/88A 1987-03-18 1988-03-16 Process and device for the surface treatment of semiconductors by particle bombardment Abandoned AU1421388A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE19873708717 DE3708717A1 (de) 1987-03-18 1987-03-18 Verfahren und vorrichtung zur bearbeitung von festkoerperoberflaechen durch teilchenbeschuss
DE3708717 1987-03-18

Publications (1)

Publication Number Publication Date
AU1421388A true AU1421388A (en) 1988-10-10

Family

ID=6323319

Family Applications (1)

Application Number Title Priority Date Filing Date
AU14213/88A Abandoned AU1421388A (en) 1987-03-18 1988-03-16 Process and device for the surface treatment of semiconductors by particle bombardment

Country Status (7)

Country Link
US (1) US5156703A (show.php)
EP (1) EP0349556B1 (show.php)
JP (1) JP2771205B2 (show.php)
KR (1) KR890700919A (show.php)
AU (1) AU1421388A (show.php)
DE (2) DE3708717A1 (show.php)
WO (1) WO1988007262A1 (show.php)

Families Citing this family (61)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3834318A1 (de) * 1988-10-08 1990-04-12 Leybold Ag Vorrichtung zum aufbringen dielektrischer oder metallischer werkstoffe
DE4025396A1 (de) * 1990-08-10 1992-02-13 Leybold Ag Einrichtung fuer die herstellung eines plasmas
US5334264A (en) * 1992-06-30 1994-08-02 Board Of Supervisors Of Louisiana State University And Agricultural And Mechanical College Titanium plasma nitriding intensified by thermionic emission source
DE4233895C2 (de) * 1992-10-08 1996-11-28 Juergen Prof Dr Engemann Vorrichtung zur Behandlung von durch einen Wickelmechanismus bewegten bahnförmigen Materialien mittels eines reaktiven bzw. nichtreaktiven, durch Hochfrequenz- oder Pulsentladung erzeugten Niederdruckplasmas
DE4301188C2 (de) * 1993-01-19 2001-05-31 Leybold Ag Vorrichtung zum Beschichten oder Ätzen von Substraten
DE4301189C2 (de) * 1993-01-19 2000-12-14 Leybold Ag Vorrichtung zum Beschichten von Substraten
KR0170456B1 (ko) * 1993-07-16 1999-03-30 세끼사와 다까시 반도체 장치 및 그 제조방법
US5614055A (en) * 1993-08-27 1997-03-25 Applied Materials, Inc. High density plasma CVD and etching reactor
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
DE19503205C1 (de) * 1995-02-02 1996-07-11 Muegge Electronic Gmbh Vorrichtung zur Erzeugung von Plasma
DE19546826C1 (de) * 1995-12-15 1997-04-03 Fraunhofer Ges Forschung Verfahren und Einrichtung zur Vorbehandlung von Substraten
US5858477A (en) * 1996-12-10 1999-01-12 Akashic Memories Corporation Method for producing recording media having protective overcoats of highly tetrahedral amorphous carbon
WO1997045855A1 (en) * 1996-05-31 1997-12-04 Akashic Memories Corporation Highly tetrahedral amorphous carbon films and methods for their production
EP1115648A1 (de) * 1998-09-23 2001-07-18 Stefan Fascko Verfahren zur herstellung von nanometerstrukturen auf halbleiteroberflächen
US6423976B1 (en) * 1999-05-28 2002-07-23 Applied Materials, Inc. Ion implanter and a method of implanting ions
JP2001023959A (ja) * 1999-07-05 2001-01-26 Mitsubishi Electric Corp プラズマ処理装置
US7232767B2 (en) * 2003-04-01 2007-06-19 Mattson Technology, Inc. Slotted electrostatic shield modification for improved etch and CVD process uniformity
DE10317027A1 (de) * 2003-04-11 2004-11-11 Leybold Optics Gmbh Hochfrequenz-Plasmastrahlquelle und Verfahren zum Bestrahlen einer Oberfläche
DE10331926A1 (de) * 2003-07-15 2005-02-24 Leybold Optics Gmbh Hochfrequenzquelle zur Erzeugung eines durch Magnetfelder geformten Plasmastrahls und Verfahren zum Bestrahlen einer Oberfläche
US20060249370A1 (en) * 2003-09-15 2006-11-09 Makoto Nagashima Back-biased face target sputtering based liquid crystal display device
DE102004011118B4 (de) * 2004-03-08 2009-09-24 Leybold Optics Gmbh Extraktionselektrode mit Lochblendenmuster für eine Plasmastrahlquelle
US7244474B2 (en) * 2004-03-26 2007-07-17 Applied Materials, Inc. Chemical vapor deposition plasma process using an ion shower grid
US7695590B2 (en) 2004-03-26 2010-04-13 Applied Materials, Inc. Chemical vapor deposition plasma reactor having plural ion shower grids
US20070205096A1 (en) * 2006-03-06 2007-09-06 Makoto Nagashima Magnetron based wafer processing
DE102006062710A1 (de) * 2006-04-27 2007-11-15 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
DE102006020291A1 (de) * 2006-04-27 2007-10-31 Ipt Ionen- Und Plasmatechnik Gmbh Plasmaquelle
US8454810B2 (en) * 2006-07-14 2013-06-04 4D-S Pty Ltd. Dual hexagonal shaped plasma source
DE102007051444B4 (de) * 2007-10-25 2012-11-08 Von Ardenne Anlagentechnik Gmbh Verfahren und Vorrichtung zum Trockenätzen von kontinuierlich bewegten Materialien
US8698400B2 (en) 2009-04-28 2014-04-15 Leybold Optics Gmbh Method for producing a plasma beam and plasma source
DE102009018912A1 (de) * 2009-04-28 2010-11-18 Leybold Optics Gmbh Verfahren zur Erzeugung eines Plasmastrahls sowie Plasmaquelle
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9435029B2 (en) 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
FR2965697B1 (fr) 2010-09-30 2014-01-03 Astrium Sas Procede et dispositif pour la formation d'un faisceau plasma.
US10225919B2 (en) * 2011-06-30 2019-03-05 Aes Global Holdings, Pte. Ltd Projected plasma source
US9105447B2 (en) 2012-08-28 2015-08-11 Advanced Energy Industries, Inc. Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
US9210790B2 (en) * 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
KR102235442B1 (ko) * 2014-06-30 2021-04-01 삼성전자주식회사 스퍼터링 장치 및 방법
WO2016156496A1 (de) 2015-03-31 2016-10-06 Bühler Alzenau Gmbh Verfahren zur herstellung von beschichteten substraten
FR3046520B1 (fr) * 2015-12-30 2018-06-22 Centre National De La Recherche Scientifique - Cnrs Systeme de generation de faisceau plasma a derive d'electrons fermee et propulseur comprenant un tel systeme
WO2017155812A1 (en) 2016-03-05 2017-09-14 Applied Materials, Inc. Methods and apparatus for controlling ion fraction in physical vapor deposition processes
KR102803961B1 (ko) 2017-11-17 2025-05-07 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 소스 및 기판 바이어스의 동기화된 펄싱
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
KR102877884B1 (ko) 2017-11-17 2025-11-04 에이이에스 글로벌 홀딩스 피티이 리미티드 플라즈마 프로세싱 시스템에서 변조 공급기들의 개선된 적용
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
JP7186234B2 (ja) * 2018-02-07 2022-12-08 アプライド マテリアルズ インコーポレイテッド 堆積装置、フレキシブル基板をコーティングする方法、及びコーティングを有するフレキシブル基板
JP2022519663A (ja) * 2019-02-06 2022-03-24 エヴァテック・アーゲー イオンを生成する方法および装置
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
EP4006948A1 (de) 2020-11-26 2022-06-01 Bühler AG Extraktionsgitter
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1550853A (en) * 1975-10-06 1979-08-22 Hitachi Ltd Apparatus and process for plasma treatment
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
FR2402301A1 (fr) * 1977-09-02 1979-03-30 Commissariat Energie Atomique Appareil de micro-usinage par erosion ionique utilisant une source de plasma
JPS5531154A (en) * 1978-08-28 1980-03-05 Hitachi Ltd Plasma etching apparatus
DD150479A1 (de) * 1979-01-29 1981-09-02 Hans Bruchlos Verfahren und vorrichtung zum aufbringen von duennen schichten
JPS5617432A (en) * 1979-07-20 1981-02-19 Fujitsu Ltd Circuit control system
CA1159012A (en) * 1980-05-02 1983-12-20 Seitaro Matsuo Plasma deposition apparatus
JPS5740932A (en) * 1980-08-26 1982-03-06 Nec Corp Device for plasma processing
JPS58100430A (ja) * 1981-12-11 1983-06-15 Hitachi Ltd プラズマ処理装置
DE3376921D1 (en) * 1982-09-10 1988-07-07 Nippon Telegraph & Telephone Ion shower apparatus
JPS59126778A (ja) * 1983-01-11 1984-07-21 Tokyo Denshi Kagaku Kabushiki プラズマエツチング方法及びその装置
JPS60211942A (ja) * 1984-04-06 1985-10-24 Hitachi Ltd プラズマ処理装置
JPS62248226A (ja) * 1986-04-21 1987-10-29 Mitsubishi Electric Corp 薄膜加工装置
JPS63144521A (ja) * 1986-12-09 1988-06-16 Matsushita Electric Ind Co Ltd 半導体製造装置
JPS6428922A (en) * 1987-07-24 1989-01-31 Citizen Watch Co Ltd Dry etching device
JPS63211630A (ja) * 1988-01-29 1988-09-02 Hitachi Ltd プラズマ処理装置

Also Published As

Publication number Publication date
EP0349556A1 (de) 1990-01-10
KR890700919A (ko) 1989-04-28
EP0349556B1 (de) 1993-11-18
DE3708717A1 (de) 1988-09-29
WO1988007262A1 (fr) 1988-09-22
US5156703A (en) 1992-10-20
DE3708717C2 (show.php) 1990-12-20
JP2771205B2 (ja) 1998-07-02
DE3885739D1 (de) 1993-12-23
JPH02502593A (ja) 1990-08-16

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