ATE92540T1 - Diamant-diamantbindung. - Google Patents

Diamant-diamantbindung.

Info

Publication number
ATE92540T1
ATE92540T1 AT89304199T AT89304199T ATE92540T1 AT E92540 T1 ATE92540 T1 AT E92540T1 AT 89304199 T AT89304199 T AT 89304199T AT 89304199 T AT89304199 T AT 89304199T AT E92540 T1 ATE92540 T1 AT E92540T1
Authority
AT
Austria
Prior art keywords
diamond
bond
growing
bridge
providing
Prior art date
Application number
AT89304199T
Other languages
English (en)
Inventor
Barbara Lynn Jones
Original Assignee
De Beers Ind Diamond
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by De Beers Ind Diamond filed Critical De Beers Ind Diamond
Application granted granted Critical
Publication of ATE92540T1 publication Critical patent/ATE92540T1/de

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26Deposition of carbon only
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02Elements
    • C30B29/04Diamond
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00After-treatment of single crystals or homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Polishing Bodies And Polishing Tools (AREA)
  • Chemical Vapour Deposition (AREA)
  • Materials For Medical Uses (AREA)
  • Laminated Bodies (AREA)
  • Ceramic Products (AREA)
AT89304199T 1988-04-28 1989-04-27 Diamant-diamantbindung. ATE92540T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB888810113A GB8810113D0 (en) 1988-04-28 1988-04-28 Bonded composite
EP89304199A EP0339992B1 (de) 1988-04-28 1989-04-27 Diamant-Diamantbindung

Publications (1)

Publication Number Publication Date
ATE92540T1 true ATE92540T1 (de) 1993-08-15

Family

ID=10636058

Family Applications (1)

Application Number Title Priority Date Filing Date
AT89304199T ATE92540T1 (de) 1988-04-28 1989-04-27 Diamant-diamantbindung.

Country Status (10)

Country Link
EP (1) EP0339992B1 (de)
JP (1) JPH0653638B2 (de)
KR (1) KR930003045B1 (de)
AT (1) ATE92540T1 (de)
AU (1) AU619285B2 (de)
CA (1) CA1337546C (de)
DE (1) DE68907991T2 (de)
ES (1) ES2043008T3 (de)
GB (1) GB8810113D0 (de)
ZA (1) ZA893033B (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2049673A1 (en) * 1990-11-26 1992-05-27 James F. Fleischer Cvd diamond by alternating chemical reactions
JP2924989B2 (ja) * 1992-01-28 1999-07-26 日本特殊陶業株式会社 ダイヤモンド膜被覆窒化珪素基部材及びその製造方法
US5571236A (en) * 1992-08-28 1996-11-05 Sumitomo Electric Industries, Ltd. Diamond wire drawing die
WO2004067812A1 (ja) 2003-01-28 2004-08-12 Sumitomo Electric Industries, Ltd. ダイヤモンド複合基板及びその製造方法
JP4849691B2 (ja) 2008-12-25 2012-01-11 独立行政法人産業技術総合研究所 大面積ダイヤモンド結晶基板及びその製造方法
TWI706061B (zh) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 大單晶鑽石及其生產方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4074471A (en) * 1974-10-15 1978-02-21 Carnegie-Mellon University Process for nucleating diamonds
JPS6059086B2 (ja) * 1980-12-12 1985-12-23 住友電気工業株式会社 被覆セラミツク工具
US4738689A (en) * 1984-03-20 1988-04-19 General Electric Company Coated oxidation-resistant porous abrasive compact and method for making same
JPS61122163A (ja) * 1984-11-16 1986-06-10 昭和電工株式会社 ダイヤモンド焼結体及びその製造方法
US4731296A (en) * 1986-07-03 1988-03-15 Mitsubishi Kinzoku Kabushiki Kaisha Diamond-coated tungsten carbide-base sintered hard alloy material for insert of a cutting tool
JPS6369971A (ja) * 1986-09-11 1988-03-30 Toshiba Tungaloy Co Ltd ダイヤモンド被覆焼結体の製造方法
EP0288526A1 (de) * 1986-10-15 1988-11-02 Hughes Aircraft Company Verfahren zur herstellung von diamantschichten
JPS63185859A (ja) * 1987-01-28 1988-08-01 株式会社 呉英製作所 焼結ダイヤモンドにおけるダイヤモンド被膜形成方法およびダイヤモンド被膜焼結ダイヤモンド
US4830702A (en) * 1987-07-02 1989-05-16 General Electric Company Hollow cathode plasma assisted apparatus and method of diamond synthesis
JP2590113B2 (ja) * 1987-07-15 1997-03-12 住友電気工業株式会社 ボンディングツール素材及びその製造方法

Also Published As

Publication number Publication date
AU619285B2 (en) 1992-01-23
JPH0251413A (ja) 1990-02-21
DE68907991T2 (de) 1993-12-02
KR890016220A (ko) 1989-11-28
AU3385689A (en) 1989-11-02
DE68907991D1 (de) 1993-09-09
KR930003045B1 (ko) 1993-04-17
JPH0653638B2 (ja) 1994-07-20
GB8810113D0 (en) 1988-06-02
ES2043008T3 (es) 1993-12-16
CA1337546C (en) 1995-11-14
EP0339992A1 (de) 1989-11-02
EP0339992B1 (de) 1993-08-04
ZA893033B (en) 1989-12-27

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee