ATE87768T1 - Herstellungsverfahren fuer eine ueberdeckungsschicht. - Google Patents

Herstellungsverfahren fuer eine ueberdeckungsschicht.

Info

Publication number
ATE87768T1
ATE87768T1 AT88301331T AT88301331T ATE87768T1 AT E87768 T1 ATE87768 T1 AT E87768T1 AT 88301331 T AT88301331 T AT 88301331T AT 88301331 T AT88301331 T AT 88301331T AT E87768 T1 ATE87768 T1 AT E87768T1
Authority
AT
Austria
Prior art keywords
capping layer
mask
manufacturing process
covering layer
selective removal
Prior art date
Application number
AT88301331T
Other languages
English (en)
Inventor
Stephen Keith Sargood
Original Assignee
Bt & D Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Bt & D Technologies Ltd filed Critical Bt & D Technologies Ltd
Application granted granted Critical
Publication of ATE87768T1 publication Critical patent/ATE87768T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
    • H01L31/1035—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type the devices comprising active layers formed only by AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Light Receiving Elements (AREA)
  • Laminated Bodies (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
AT88301331T 1987-02-17 1988-02-17 Herstellungsverfahren fuer eine ueberdeckungsschicht. ATE87768T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB878703592A GB8703592D0 (en) 1987-02-17 1987-02-17 Capping layer fabrication
EP88301331A EP0279651B1 (de) 1987-02-17 1988-02-17 Herstellungsverfahren für eine Überdeckungsschicht

Publications (1)

Publication Number Publication Date
ATE87768T1 true ATE87768T1 (de) 1993-04-15

Family

ID=10612414

Family Applications (1)

Application Number Title Priority Date Filing Date
AT88301331T ATE87768T1 (de) 1987-02-17 1988-02-17 Herstellungsverfahren fuer eine ueberdeckungsschicht.

Country Status (9)

Country Link
US (1) US5144396A (de)
EP (1) EP0279651B1 (de)
JP (1) JPH01503664A (de)
AT (1) ATE87768T1 (de)
CA (1) CA1314110C (de)
DE (1) DE3879730T2 (de)
ES (1) ES2039612T3 (de)
GB (1) GB8703592D0 (de)
WO (1) WO1988006350A1 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404987A1 (de) * 1989-06-29 1991-01-02 Siemens Aktiengesellschaft Ohmscher Kontakt für eine p-leitende Schicht eines InP-Substrates von Fotodioden und Verfahren zu dessen Herstellung
US5542018A (en) * 1990-08-31 1996-07-30 Kuhara; Yoshiki Semiconductor laser device making use of photodiode chip
JPH04216682A (ja) * 1990-12-18 1992-08-06 Sumitomo Electric Ind Ltd 受光素子
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
DE10104015A1 (de) * 2001-01-31 2002-08-01 Bosch Gmbh Robert Optischer Detektor und Verfahren zum Herstellen einer Anordnung mehrerer Halbleiterschichten
WO2009075880A2 (en) * 2007-12-12 2009-06-18 Newport Corporation Improved performance optically coated semiconductor devices and related methods of manufacture
US9079194B2 (en) 2010-07-19 2015-07-14 Terumo Bct, Inc. Centrifuge for processing blood and blood components
WO2017098769A1 (ja) * 2015-12-11 2017-06-15 ソニー株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
CN112510062B (zh) * 2020-11-27 2022-08-16 电子科技大学 一种上转换器件红外复合波长成像系统及其搭建测试方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
CA1182198A (en) * 1981-09-16 1985-02-05 Paul P. Webb Si photodiode and a method of making same
JPS60110177A (ja) * 1983-11-18 1985-06-15 Fujitsu Ltd 半導体受光装置の製造方法
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
US4624004A (en) * 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact

Also Published As

Publication number Publication date
US5144396A (en) 1992-09-01
ES2039612T3 (es) 1993-10-01
DE3879730T2 (de) 1993-08-19
WO1988006350A1 (en) 1988-08-25
DE3879730D1 (de) 1993-05-06
CA1314110C (en) 1993-03-02
GB8703592D0 (en) 1987-03-25
EP0279651B1 (de) 1993-03-31
JPH01503664A (ja) 1989-12-07
EP0279651A1 (de) 1988-08-24

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties