ES2039612T3 - Fabricacion de capas de acabado. - Google Patents

Fabricacion de capas de acabado.

Info

Publication number
ES2039612T3
ES2039612T3 ES198888301331T ES88301331T ES2039612T3 ES 2039612 T3 ES2039612 T3 ES 2039612T3 ES 198888301331 T ES198888301331 T ES 198888301331T ES 88301331 T ES88301331 T ES 88301331T ES 2039612 T3 ES2039612 T3 ES 2039612T3
Authority
ES
Spain
Prior art keywords
mask
manufacture
layer
phase
finishing layers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES198888301331T
Other languages
English (en)
Inventor
Stephen Keith Sargood
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BT&D Technologies Ltd
Original Assignee
BT&D Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BT&D Technologies Ltd filed Critical BT&D Technologies Ltd
Application granted granted Critical
Publication of ES2039612T3 publication Critical patent/ES2039612T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/127—The active layers comprising only Group III-V materials, e.g. GaAs or InP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Light Receiving Elements (AREA)
  • Laminated Bodies (AREA)
  • Medicines That Contain Protein Lipid Enzymes And Other Medicines (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

DISPOSITIVO DE EMPALME P-N PLANO, CON CONTACTO ELECTRICO CON LA REGION ACTIVA. LA CAPA DE CIERRE (4) HA SIDO EXTRAIDA SELECTIVAMENTE A TRAVES DE UNA MASCARA (5,6), BIEN ANTES DE UNA FASE DE DIFUSION EN LA QUE SE FORMA LA UNION, BIEN DIFUNDIENDOSE PREVIAMENTE LA IMPUREZA A TRAVES DE LA CAPA (4). EN ESTE ULTIMO CASO, LA CAPA DE CIERRE (4) SE GRABA PREFERENTEMENTE A TRAVES DE UNA SEGUNDA MASCARA (8,9) QUE TIENE UNA VENTANA MENOR (9) EN CORRESPONDENCIA CON LA (6) DE LA MASCARA (5) UTILIZADA PARA LA FASE DE DIFUCION. EL DISPOSITIVO TIENE ESPECIAL APLICACION COMO DETECTOR FOTODIODO EN COMUNICACIONES OPTICAS.
ES198888301331T 1987-02-17 1988-02-17 Fabricacion de capas de acabado. Expired - Lifetime ES2039612T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB878703592A GB8703592D0 (en) 1987-02-17 1987-02-17 Capping layer fabrication

Publications (1)

Publication Number Publication Date
ES2039612T3 true ES2039612T3 (es) 1993-10-01

Family

ID=10612414

Family Applications (1)

Application Number Title Priority Date Filing Date
ES198888301331T Expired - Lifetime ES2039612T3 (es) 1987-02-17 1988-02-17 Fabricacion de capas de acabado.

Country Status (9)

Country Link
US (1) US5144396A (es)
EP (1) EP0279651B1 (es)
JP (1) JPH01503664A (es)
AT (1) ATE87768T1 (es)
CA (1) CA1314110C (es)
DE (1) DE3879730T2 (es)
ES (1) ES2039612T3 (es)
GB (1) GB8703592D0 (es)
WO (1) WO1988006350A1 (es)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0404987A1 (de) * 1989-06-29 1991-01-02 Siemens Aktiengesellschaft Ohmscher Kontakt für eine p-leitende Schicht eines InP-Substrates von Fotodioden und Verfahren zu dessen Herstellung
US5542018A (en) * 1990-08-31 1996-07-30 Kuhara; Yoshiki Semiconductor laser device making use of photodiode chip
JPH04216682A (ja) * 1990-12-18 1992-08-06 Sumitomo Electric Ind Ltd 受光素子
JP4221818B2 (ja) * 1999-05-28 2009-02-12 沖電気工業株式会社 光半導体素子の製造方法
DE10104015A1 (de) * 2001-01-31 2002-08-01 Bosch Gmbh Robert Optischer Detektor und Verfahren zum Herstellen einer Anordnung mehrerer Halbleiterschichten
WO2009075880A2 (en) * 2007-12-12 2009-06-18 Newport Corporation Improved performance optically coated semiconductor devices and related methods of manufacture
JP5876047B2 (ja) 2010-07-19 2016-03-02 テルモ ビーシーティー、インコーポレーテッド 血液及び血液成分を処理するための遠心分離器
WO2017098769A1 (ja) 2015-12-11 2017-06-15 ソニー株式会社 受光素子、受光素子の製造方法、撮像素子および電子機器
CN112510062B (zh) * 2020-11-27 2022-08-16 电子科技大学 一种上转换器件红外复合波长成像系统及其搭建测试方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2501915A1 (fr) * 1981-03-10 1982-09-17 Telecommunications Sa Photodetecteur sensible dans l'infra-rouge proche
CA1182198A (en) * 1981-09-16 1985-02-05 Paul P. Webb Si photodiode and a method of making same
JPS60110177A (ja) * 1983-11-18 1985-06-15 Fujitsu Ltd 半導体受光装置の製造方法
US4608586A (en) * 1984-05-11 1986-08-26 At&T Bell Laboratories Back-illuminated photodiode with a wide bandgap cap layer
JPS61172381A (ja) * 1984-12-22 1986-08-04 Fujitsu Ltd ＩｎＰ系化合物半導体装置
US4624004A (en) * 1985-07-15 1986-11-18 Eaton Corporation Buried channel MESFET with backside source contact

Also Published As

Publication number Publication date
CA1314110C (en) 1993-03-02
DE3879730D1 (de) 1993-05-06
WO1988006350A1 (en) 1988-08-25
EP0279651B1 (en) 1993-03-31
EP0279651A1 (en) 1988-08-24
DE3879730T2 (de) 1993-08-19
ATE87768T1 (de) 1993-04-15
US5144396A (en) 1992-09-01
GB8703592D0 (en) 1987-03-25
JPH01503664A (ja) 1989-12-07

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