JPS5629378A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS5629378A
JPS5629378A JP10532379A JP10532379A JPS5629378A JP S5629378 A JPS5629378 A JP S5629378A JP 10532379 A JP10532379 A JP 10532379A JP 10532379 A JP10532379 A JP 10532379A JP S5629378 A JPS5629378 A JP S5629378A
Authority
JP
Japan
Prior art keywords
concave portion
protecting film
face
substrate
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10532379A
Other languages
Japanese (ja)
Inventor
Kazufumi Ogawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP10532379A priority Critical patent/JPS5629378A/en
Publication of JPS5629378A publication Critical patent/JPS5629378A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To obtain a highly sensitive sensor by forming a V-shaped concave portion in the surface of a semiconductor substrate, providing a diode which is to become a photosensor by diffusing inpurities in the inner wall, forming a protecting film having a shape of a convex lens which covers said concave portion, and employing the substrates having the same area. CONSTITUTION:The protecting film 3 is deposited on a one-conductive type semiconductor substrate 1, a region, in which the V-shaped concave portion 8 is to be formed, is removed by a photoetching method, and the concave portion 8 is formed by using the anisotropic etching liquid. In this case, if the surface of the substrate is a (100) face and the flat cut is a (110) face, a blended liquid of ethylene diamine and catechol is used as the etching liquid, and a (111) face is exposed on the side of the concave portion 8. Then, impurities, which have reversive conductive type with respect to the substrate 1, are diffused, thereby regions 2 and 2' are formed on the inner wall of the concave portion 8. Then, a glass protecting film 10 with a low melting point is deposited on all the surface, and the concave portion 8 is covered by the photoetching. Thereafter, the high temperature heat treatment is perfomed, the protecting film 8 is reflowed, thereby a lens effect 10' is yielded.
JP10532379A 1979-08-17 1979-08-17 Semiconductor device and manufacture thereof Pending JPS5629378A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10532379A JPS5629378A (en) 1979-08-17 1979-08-17 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10532379A JPS5629378A (en) 1979-08-17 1979-08-17 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS5629378A true JPS5629378A (en) 1981-03-24

Family

ID=14404498

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10532379A Pending JPS5629378A (en) 1979-08-17 1979-08-17 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS5629378A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225668A (en) * 1982-06-24 1983-12-27 Matsushita Electronics Corp Solid-state image pick-up device and manufacture thereof
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58225668A (en) * 1982-06-24 1983-12-27 Matsushita Electronics Corp Solid-state image pick-up device and manufacture thereof
GB2386250A (en) * 2002-03-08 2003-09-10 Denselight Semiconductors Pte Passive photodetector

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