ATE74229T1 - Elektrisch aenderbare nichtfluechtige speicheranordnung. - Google Patents

Elektrisch aenderbare nichtfluechtige speicheranordnung.

Info

Publication number
ATE74229T1
ATE74229T1 AT86117929T AT86117929T ATE74229T1 AT E74229 T1 ATE74229 T1 AT E74229T1 AT 86117929 T AT86117929 T AT 86117929T AT 86117929 T AT86117929 T AT 86117929T AT E74229 T1 ATE74229 T1 AT E74229T1
Authority
AT
Austria
Prior art keywords
eanom
cell
mos transistor
gate
terminal
Prior art date
Application number
AT86117929T
Other languages
English (en)
Inventor
Joseph G Nolan
Buskirk Michael A Van
Te-Long Chiu
Ying K Shum
Original Assignee
Sierra Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sierra Semiconductor Corp filed Critical Sierra Semiconductor Corp
Application granted granted Critical
Publication of ATE74229T1 publication Critical patent/ATE74229T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
  • Dram (AREA)
  • Footwear And Its Accessory, Manufacturing Method And Apparatuses (AREA)
  • Control Of Combustion (AREA)
  • Electrostatic Separation (AREA)
AT86117929T 1986-01-03 1986-12-23 Elektrisch aenderbare nichtfluechtige speicheranordnung. ATE74229T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US06/815,869 US4780750A (en) 1986-01-03 1986-01-03 Electrically alterable non-volatile memory device
EP86117929A EP0231507B1 (de) 1986-01-03 1986-12-23 Elektrisch änderbare nichtflüchtige Speicheranordnung

Publications (1)

Publication Number Publication Date
ATE74229T1 true ATE74229T1 (de) 1992-04-15

Family

ID=25219064

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86117929T ATE74229T1 (de) 1986-01-03 1986-12-23 Elektrisch aenderbare nichtfluechtige speicheranordnung.

Country Status (8)

Country Link
US (1) US4780750A (de)
EP (1) EP0231507B1 (de)
JP (1) JPS62282466A (de)
KR (1) KR870007570A (de)
AT (1) ATE74229T1 (de)
AU (1) AU597610B2 (de)
CA (1) CA1267726A (de)
DE (1) DE3684589D1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4852063A (en) * 1987-11-23 1989-07-25 Ford Aerospace & Communications Corporation Programmable voltage offset circuit
US5020030A (en) * 1988-10-31 1991-05-28 Huber Robert J Nonvolatile SNOS memory cell with induced capacitor
US5142495A (en) * 1989-03-10 1992-08-25 Intel Corporation Variable load for margin mode
JP2529885B2 (ja) * 1989-03-10 1996-09-04 工業技術院長 半導体メモリ及びその動作方法
IT1228822B (it) * 1989-03-23 1991-07-04 Sgs Thomson Microelectronics Cella di riferimento per la lettura di dispositivi di memoria eeprom.
WO1990015412A1 (en) * 1989-06-08 1990-12-13 Sierra Semiconductor Corporation A high reliability non-volatile memory circuit and structure
US5168464A (en) * 1989-11-29 1992-12-01 Ncr Corporation Nonvolatile differential memory device and method
US5231602A (en) * 1990-04-25 1993-07-27 Advanced Micro Devices, Inc. Apparatus and method for improving the endurance of floating gate devices
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
US5359571A (en) * 1993-01-27 1994-10-25 Yu Shih Chiang Memory array having a plurality of address partitions
US5424656A (en) * 1993-05-07 1995-06-13 Microelectronics And Computer Technology Corporation Continuous superconductor to semiconductor converter circuit
US5748525A (en) * 1993-10-15 1998-05-05 Advanced Micro Devices, Inc. Array cell circuit with split read/write line
JP3569728B2 (ja) * 1995-01-11 2004-09-29 直 柴田 不揮発性半導体メモリ装置
KR100610490B1 (ko) * 2005-06-17 2006-08-08 매그나칩 반도체 유한회사 Ｅｅｐｒｏｍ 셀 및 ｅｅｐｒｏｍ 블록

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4388704A (en) * 1980-09-30 1983-06-14 International Business Machines Corporation Non-volatile RAM cell with enhanced conduction insulators
JPS57141969A (en) * 1981-02-27 1982-09-02 Toshiba Corp Nonvolatile semiconductor memory
JPS5851568A (ja) * 1981-09-22 1983-03-26 Nec Corp 半導体装置
US4477825A (en) * 1981-12-28 1984-10-16 National Semiconductor Corporation Electrically programmable and erasable memory cell
JPS58130571A (ja) * 1982-01-29 1983-08-04 Hitachi Ltd 半導体装置
US4513397A (en) * 1982-12-10 1985-04-23 Rca Corporation Electrically alterable, nonvolatile floating gate memory device
US4527255A (en) * 1982-07-06 1985-07-02 Signetics Corporation Non-volatile static random-access memory cell
JPS5960797A (ja) * 1982-09-30 1984-04-06 Toshiba Corp 不揮発性半導体メモリ装置
US4546454A (en) * 1982-11-05 1985-10-08 Seeq Technology, Inc. Non-volatile memory cell fuse element
EP0133667A3 (en) * 1983-08-12 1987-08-26 American Microsystems, Incorporated High coupling ratio dense electrically erasable programmable read-only memory
US4571704A (en) * 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch
US4611309A (en) * 1984-09-24 1986-09-09 Advanced Micro Devices, Inc. Non-volatile dynamic RAM cell
US4685083A (en) * 1985-10-03 1987-08-04 Thomson Components-Mostek Corporation Improved nonvolatile memory circuit using a dual node floating gate memory cell

Also Published As

Publication number Publication date
AU597610B2 (en) 1990-06-07
US4780750A (en) 1988-10-25
CA1267726A (en) 1990-04-10
EP0231507A2 (de) 1987-08-12
AU6709686A (en) 1987-07-09
EP0231507A3 (en) 1988-04-20
DE3684589D1 (de) 1992-04-30
KR870007570A (ko) 1987-08-20
EP0231507B1 (de) 1992-03-25
JPS62282466A (ja) 1987-12-08

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Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties