ATE60958T1 - Elektronenstrahl-belichtungsvorrichtung. - Google Patents

Elektronenstrahl-belichtungsvorrichtung.

Info

Publication number
ATE60958T1
ATE60958T1 AT82105022T AT82105022T ATE60958T1 AT E60958 T1 ATE60958 T1 AT E60958T1 AT 82105022 T AT82105022 T AT 82105022T AT 82105022 T AT82105022 T AT 82105022T AT E60958 T1 ATE60958 T1 AT E60958T1
Authority
AT
Austria
Prior art keywords
electron beam
pattern
rectangular
decomposed
patterns
Prior art date
Application number
AT82105022T
Other languages
English (en)
Inventor
Akinori Shibayama
Minpei Fujinami
Haruo Yoda
Original Assignee
Hitachi Ltd
Nippon Telegraph & Telephone
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Nippon Telegraph & Telephone filed Critical Hitachi Ltd
Application granted granted Critical
Publication of ATE60958T1 publication Critical patent/ATE60958T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/302—Controlling tubes by external information, e.g. programme control
    • H01J37/3023—Programme control
    • H01J37/3026—Patterning strategy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Lasers (AREA)
AT82105022T 1981-06-10 1982-06-08 Elektronenstrahl-belichtungsvorrichtung. ATE60958T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP56088183A JPS57204125A (en) 1981-06-10 1981-06-10 Electron-ray drawing device
EP82105022A EP0066882B1 (de) 1981-06-10 1982-06-08 Elektronenstrahl-Belichtungsvorrichtung

Publications (1)

Publication Number Publication Date
ATE60958T1 true ATE60958T1 (de) 1991-03-15

Family

ID=13935786

Family Applications (1)

Application Number Title Priority Date Filing Date
AT82105022T ATE60958T1 (de) 1981-06-10 1982-06-08 Elektronenstrahl-belichtungsvorrichtung.

Country Status (5)

Country Link
US (1) US4532598A (de)
EP (1) EP0066882B1 (de)
JP (1) JPS57204125A (de)
AT (1) ATE60958T1 (de)
DE (1) DE3280306D1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60196939A (ja) * 1984-03-19 1985-10-05 Fujitsu Ltd 荷電粒子ビ−ム露光方法
JP2680295B2 (ja) * 1984-03-22 1997-11-19 株式会社東芝 電子ビーム露光装置の描画データ作成方法及びその装置
JPS6246518A (ja) * 1985-08-23 1987-02-28 Toshiba Corp 荷電ビ−ム描画方法
US4837447A (en) * 1986-05-06 1989-06-06 Research Triangle Institute, Inc. Rasterization system for converting polygonal pattern data into a bit-map
JPS63199421A (ja) * 1987-02-16 1988-08-17 Toshiba Corp 荷電ビ−ム描画方法
US5030836A (en) * 1988-08-05 1991-07-09 Toshiba Machine Co., Ltd. Method and apparatus for drawing patterns using an energy beam
JPH0795269B2 (ja) * 1988-11-04 1995-10-11 富士通株式会社 命令コードのデコード装置
JP2710162B2 (ja) * 1988-12-13 1998-02-10 株式会社東芝 荷電ビーム描画用データの作成方法及び作成装置
JPH02210814A (ja) * 1989-02-10 1990-08-22 Fujitsu Ltd 半導体装置の製造方法
US5434795A (en) * 1990-01-11 1995-07-18 Fujitsu Limited Method of forming pattern having optical angle in charged particle exposure system
US5539911A (en) 1991-07-08 1996-07-23 Seiko Epson Corporation High-performance, superscalar-based computer system with out-of-order instruction execution
US5493687A (en) 1991-07-08 1996-02-20 Seiko Epson Corporation RISC microprocessor architecture implementing multiple typed register sets
US5159201A (en) * 1991-07-26 1992-10-27 International Business Machines Corporation Shape decompositon system and method
US5251140A (en) * 1991-07-26 1993-10-05 International Business Machines Corporation E-beam control data compaction system and method
JP2501726B2 (ja) * 1991-10-08 1996-05-29 インターナショナル・ビジネス・マシーンズ・コーポレイション コンピュ―タ・イメ―ジ生成装置及びデ―タ減縮方法
US5371684A (en) * 1992-03-31 1994-12-06 Seiko Epson Corporation Semiconductor floor plan for a register renaming circuit
JP3730252B2 (ja) 1992-03-31 2005-12-21 トランスメタ コーポレイション レジスタ名称変更方法及び名称変更システム
JP3637920B2 (ja) 1992-05-01 2005-04-13 セイコーエプソン株式会社 スーパースケーラマイクロプロセサに於て命令をリタイアさせるシステム及び方法
DE69330889T2 (de) 1992-12-31 2002-03-28 Seiko Epson Corp., Tokio/Tokyo System und Verfahren zur Änderung der Namen von Registern
US5446649A (en) * 1992-12-31 1995-08-29 International Business Machines Corporation Data-hiding and skew scan for unioning of shapes in electron beam lithography post-processing
US5628021A (en) 1992-12-31 1997-05-06 Seiko Epson Corporation System and method for assigning tags to control instruction processing in a superscalar processor
JP2647000B2 (ja) * 1994-05-25 1997-08-27 日本電気株式会社 電子ビームの露光方法
JP3549282B2 (ja) * 1995-04-28 2004-08-04 株式会社ルネサステクノロジ 荷電ビーム描画データ作成方法およびその作成装置
GB2334598B (en) * 1995-04-28 1999-11-17 Mitsubishi Electric Corp A charged beam pattern data generating method and a charged beam pattern data generating apparatus
JPH10270341A (ja) * 1997-03-28 1998-10-09 Jeol Ltd 電子ビーム描画方法
JP4156700B2 (ja) * 1998-03-16 2008-09-24 富士通株式会社 露光データ作成方法、露光データ作成装置、及び、記録媒体
JP4006216B2 (ja) * 2001-10-26 2007-11-14 日本電子株式会社 可変面積型電子ビーム描画装置を用いた描画方法
US7229742B2 (en) * 2004-04-14 2007-06-12 Micron Technology, Inc. Methods for improving angled line feature accuracy and throughput using electron beam lithography and electron beam lithography system
JP5658997B2 (ja) * 2010-12-17 2015-01-28 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置および描画データ生成方法
JP2016086103A (ja) * 2014-10-27 2016-05-19 キヤノン株式会社 描画装置、リソグラフィーシステム、パターンデータの作成方法、描画方法及び物品の製造方法
JP2016086102A (ja) * 2014-10-27 2016-05-19 キヤノン株式会社 リソグラフィーシステム及び物品の製造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894271A (en) * 1973-08-31 1975-07-08 Ibm Method and apparatus for aligning electron beams
JPS5283177A (en) * 1975-12-31 1977-07-11 Fujitsu Ltd Electron beam exposure device
US4393312A (en) * 1976-02-05 1983-07-12 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
JPS5412675A (en) * 1977-06-30 1979-01-30 Jeol Ltd Electon beam exposure method
US4147937A (en) * 1977-11-01 1979-04-03 Fujitsu Limited Electron beam exposure system method and apparatus
JPS5473577A (en) * 1977-11-24 1979-06-12 Fujitsu Ltd Electron beam exposure method
JPS5493364A (en) * 1977-12-30 1979-07-24 Fujitsu Ltd Exposure system for electron beam
US4167676A (en) * 1978-02-21 1979-09-11 Bell Telephone Laboratories, Incorporated Variable-spot scanning in an electron beam exposure system
US4280186A (en) * 1978-07-07 1981-07-21 Tokyo Shibaura Denki Kabushiki Kaisha Exposure apparatus using electron beams
US4213053A (en) * 1978-11-13 1980-07-15 International Business Machines Corporation Electron beam system with character projection capability
US4424448A (en) * 1979-12-26 1984-01-03 Tokyo Shibaura Denki Kabushiki Kaisha Electron beam apparatus
JPS5712520A (en) * 1980-06-26 1982-01-22 Nippon Telegr & Teleph Corp <Ntt> Dividing method of figure by exposing in electron beam radiation

Also Published As

Publication number Publication date
US4532598A (en) 1985-07-30
EP0066882A3 (en) 1985-06-05
EP0066882B1 (de) 1991-02-20
EP0066882A2 (de) 1982-12-15
JPS57204125A (en) 1982-12-14
JPS6239818B2 (de) 1987-08-25
DE3280306D1 (de) 1991-03-28

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Legal Events

Date Code Title Description
UEP Publication of translation of european patent specification
REN Ceased due to non-payment of the annual fee