ATE60853T1 - Halbleiteranordnung mit verbindungsschichten. - Google Patents

Halbleiteranordnung mit verbindungsschichten.

Info

Publication number
ATE60853T1
ATE60853T1 AT85306106T AT85306106T ATE60853T1 AT E60853 T1 ATE60853 T1 AT E60853T1 AT 85306106 T AT85306106 T AT 85306106T AT 85306106 T AT85306106 T AT 85306106T AT E60853 T1 ATE60853 T1 AT E60853T1
Authority
AT
Austria
Prior art keywords
disilicide
silicon
semiconductor arrangement
connecting layers
aluminium
Prior art date
Application number
AT85306106T
Other languages
English (en)
Inventor
Peter Denis Scovell
Paul John Rosser
Gary John Tomkins
Original Assignee
Stc Plc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stc Plc filed Critical Stc Plc
Application granted granted Critical
Publication of ATE60853T1 publication Critical patent/ATE60853T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
    • H01L21/76889—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances by forming silicides of refractory metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/019—Contacts of silicides

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Bipolar Transistors (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)
  • Recrystallisation Techniques (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
AT85306106T 1984-09-14 1985-08-29 Halbleiteranordnung mit verbindungsschichten. ATE60853T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB08423265A GB2164491B (en) 1984-09-14 1984-09-14 Semiconductor devices
EP85306106A EP0174773B1 (de) 1984-09-14 1985-08-29 Halbleiteranordnung mit Verbindungsschichten

Publications (1)

Publication Number Publication Date
ATE60853T1 true ATE60853T1 (de) 1991-02-15

Family

ID=10566719

Family Applications (1)

Application Number Title Priority Date Filing Date
AT85306106T ATE60853T1 (de) 1984-09-14 1985-08-29 Halbleiteranordnung mit verbindungsschichten.

Country Status (6)

Country Link
US (1) US4772571A (de)
EP (1) EP0174773B1 (de)
JP (1) JPS6173370A (de)
AT (1) ATE60853T1 (de)
DE (1) DE3581682D1 (de)
GB (1) GB2164491B (de)

Families Citing this family (42)

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Publication number Priority date Publication date Assignee Title
US4920071A (en) * 1985-03-15 1990-04-24 Fairchild Camera And Instrument Corporation High temperature interconnect system for an integrated circuit
DE3685449D1 (de) * 1985-03-15 1992-07-02 Fairchild Semiconductor Corp., Cupertino, Calif., Us
US4931411A (en) * 1985-05-01 1990-06-05 Texas Instruments Incorporated Integrated circuit process with TiN-gate transistor
JPS6358927A (ja) * 1986-08-29 1988-03-14 Mitsubishi Electric Corp 半導体装置の製造方法
CA1306072C (en) * 1987-03-30 1992-08-04 John E. Cronin Refractory metal - titanium nitride conductive structures and processes for forming the same
US4962414A (en) * 1988-02-11 1990-10-09 Sgs-Thomson Microelectronics, Inc. Method for forming a contact VIA
JPH01298765A (ja) * 1988-05-27 1989-12-01 Fujitsu Ltd 半導体装置及びその製造方法
US4897287A (en) * 1988-10-06 1990-01-30 The Boc Group, Inc. Metallization process for an integrated circuit
US5658828A (en) * 1989-11-30 1997-08-19 Sgs-Thomson Microelectronics, Inc. Method for forming an aluminum contact through an insulating layer
DE69031903T2 (de) * 1989-11-30 1998-04-16 Sgs Thomson Microelectronics Verfahren zum Herstellen von Zwischenschicht-Kontakten
US5108951A (en) * 1990-11-05 1992-04-28 Sgs-Thomson Microelectronics, Inc. Method for forming a metal contact
US6242811B1 (en) 1989-11-30 2001-06-05 Stmicroelectronics, Inc. Interlevel contact including aluminum-refractory metal alloy formed during aluminum deposition at an elevated temperature
US6271137B1 (en) 1989-11-30 2001-08-07 Stmicroelectronics, Inc. Method of producing an aluminum stacked contact/via for multilayer
US5472912A (en) * 1989-11-30 1995-12-05 Sgs-Thomson Microelectronics, Inc. Method of making an integrated circuit structure by using a non-conductive plug
US5483104A (en) * 1990-01-12 1996-01-09 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
US5166771A (en) * 1990-01-12 1992-11-24 Paradigm Technology, Inc. Self-aligning contact and interconnect structure
US5172211A (en) * 1990-01-12 1992-12-15 Paradigm Technology, Inc. High resistance polysilicon load resistor
KR920005242A (ko) * 1990-08-20 1992-03-28 김광호 게이트-절연체-반도체의 구조를 가지는 트랜지스터의 제조방법
US5369302A (en) * 1990-10-22 1994-11-29 Sgs-Thomson Microelectronics, Inc. Method to improve step coverage by contact reflow
US6287963B1 (en) 1990-11-05 2001-09-11 Stmicroelectronics, Inc. Method for forming a metal contact
US5389575A (en) * 1991-07-12 1995-02-14 Hughes Aircraft Company Self-aligned contact diffusion barrier method
JP2756886B2 (ja) * 1991-08-30 1998-05-25 三菱電機株式会社 半導体装置およびその製造方法
DE69319993T2 (de) * 1992-09-22 1998-12-10 Sgs-Thomson Microelectronics, Inc., Carrollton, Tex. Methode zur Herstellung eines Metallkontaktes
US5652180A (en) * 1993-06-28 1997-07-29 Kawasaki Steel Corporation Method of manufacturing semiconductor device with contact structure
US6001729A (en) * 1995-01-10 1999-12-14 Kawasaki Steel Corporation Method of forming wiring structure for semiconductor device
JPH08191054A (ja) * 1995-01-10 1996-07-23 Kawasaki Steel Corp 半導体装置及びその製造方法
US6271120B1 (en) * 1995-03-10 2001-08-07 Advanced Micro Devices, Inc. Method of enhanced silicide layer for advanced metal diffusion barrier layer application
US5956611A (en) * 1997-09-03 1999-09-21 Micron Technologies, Inc. Field emission displays with reduced light leakage
US6365488B1 (en) * 1998-03-05 2002-04-02 Industrial Technology Research Institute Method of manufacturing SOI wafer with buried layer
US6238737B1 (en) * 1999-06-22 2001-05-29 International Business Machines Corporation Method for protecting refractory metal thin film requiring high temperature processing in an oxidizing atmosphere and structure formed thereby
US7812404B2 (en) * 2005-05-09 2010-10-12 Sandisk 3D Llc Nonvolatile memory cell comprising a diode and a resistance-switching material
US7834338B2 (en) * 2005-11-23 2010-11-16 Sandisk 3D Llc Memory cell comprising nickel-cobalt oxide switching element
US7829875B2 (en) * 2006-03-31 2010-11-09 Sandisk 3D Llc Nonvolatile rewritable memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7808810B2 (en) * 2006-03-31 2010-10-05 Sandisk 3D Llc Multilevel nonvolatile memory cell comprising a resistivity-switching oxide or nitride and an antifuse
US7875871B2 (en) 2006-03-31 2011-01-25 Sandisk 3D Llc Heterojunction device comprising a semiconductor and a resistivity-switching oxide or nitride
US7824956B2 (en) * 2007-06-29 2010-11-02 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US7902537B2 (en) * 2007-06-29 2011-03-08 Sandisk 3D Llc Memory cell that employs a selectively grown reversible resistance-switching element and methods of forming the same
US20090104756A1 (en) * 2007-06-29 2009-04-23 Tanmay Kumar Method to form a rewriteable memory cell comprising a diode and a resistivity-switching grown oxide
US7846785B2 (en) * 2007-06-29 2010-12-07 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
US8233308B2 (en) 2007-06-29 2012-07-31 Sandisk 3D Llc Memory cell that employs a selectively deposited reversible resistance-switching element and methods of forming the same
KR200465941Y1 (ko) * 2011-11-11 2013-03-19 박혜원 쿠션 쇼파
US9761461B2 (en) * 2014-04-16 2017-09-12 Cirrus Logic, Inc. Systems and methods for fabricating a polycrystaline semiconductor resistor on a semiconductor substrate

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3701931A (en) * 1971-05-06 1972-10-31 Ibm Gold tantalum-nitrogen high conductivity metallurgy
US3879746A (en) * 1972-05-30 1975-04-22 Bell Telephone Labor Inc Gate metallization structure
US4332839A (en) * 1978-12-29 1982-06-01 Bell Telephone Laboratories, Incorporated Method for making integrated semiconductor circuit structure with formation of Ti or Ta silicide
DE3027954A1 (de) * 1980-07-23 1982-02-25 Siemens AG, 1000 Berlin und 8000 München Integrierte mos-schaltung mit mindestens einer zusaetzlichen leiterbahnebene sowie ein verfahren zur herstellung derselben
US4622735A (en) * 1980-12-12 1986-11-18 Tokyo Shibaura Denki Kabushiki Kaisha Method for manufacturing a semiconductor device utilizing self-aligned silicide regions
JPS58103168A (ja) * 1981-12-16 1983-06-20 Fujitsu Ltd 半導体装置
GB2114809B (en) * 1982-02-04 1986-02-05 Standard Telephones Cables Ltd Metallic silicide production
US4429011A (en) * 1982-03-29 1984-01-31 General Electric Company Composite conductive structures and method of making same
JPS58175846A (ja) * 1982-04-08 1983-10-15 Toshiba Corp 半導体装置の製造方法
JPS59175763A (ja) * 1983-03-25 1984-10-04 Fujitsu Ltd 半導体装置
FR2544909B1 (fr) * 1983-04-21 1985-06-21 Commissariat Energie Atomique Procede de conditionnement de dechets contamines en milieu acide, notamment de materiaux echangeurs de cations
US4545116A (en) * 1983-05-06 1985-10-08 Texas Instruments Incorporated Method of forming a titanium disilicide
US4567058A (en) * 1984-07-27 1986-01-28 Fairchild Camera & Instrument Corporation Method for controlling lateral diffusion of silicon in a self-aligned TiSi2 process

Also Published As

Publication number Publication date
JPS6173370A (ja) 1986-04-15
GB2164491B (en) 1988-04-07
EP0174773A2 (de) 1986-03-19
EP0174773A3 (en) 1987-01-21
DE3581682D1 (de) 1991-03-14
GB8423265D0 (en) 1984-10-17
US4772571A (en) 1988-09-20
EP0174773B1 (de) 1991-02-06
GB2164491A (en) 1986-03-19

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Legal Events

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