JPS6450545A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6450545A
JPS6450545A JP20845787A JP20845787A JPS6450545A JP S6450545 A JPS6450545 A JP S6450545A JP 20845787 A JP20845787 A JP 20845787A JP 20845787 A JP20845787 A JP 20845787A JP S6450545 A JPS6450545 A JP S6450545A
Authority
JP
Japan
Prior art keywords
polysilicide
interconnection
conductor layer
layer
underlying conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP20845787A
Other languages
Japanese (ja)
Inventor
Hideo Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP20845787A priority Critical patent/JPS6450545A/en
Publication of JPS6450545A publication Critical patent/JPS6450545A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To decrease contact resistance at an interlayer connecting section of silicide- polysilicon-metal (silicide)-type interconnections independently from an amount of dopants in the polysilicon and to obtain an ohmic contact, by selectively and thermally oxidising the connecting section between a polysilicide interconnection and an underlying conductor layer. CONSTITUTION:In order to provide a polysilicide interconnection 8 on an underlying conductor layer 5 comprising a layer 5B of a high-melting metal or a silicide thereof, the polysilicide interconnection 8 is formed on an insulating film 6 covering the underlying conductor layer 5 such that the polysilicide layer is in contact with the underlying conductor layer 5 through an aperture 7 formed in the insulating film 6. The contact section between the polysilicide interconnection 8 and the underlying conductor layer 5 is selectively and thermally oxidized so that the polysilicon 8A in the upper layer in the oxidized section of the polycide interconnection 8 is diffused to the surface of the polysilicide interconnection 8 to oxidize the same, whereby the upper silicide layer 8B of the polysilicide interconnection 8 is directly contacted with the underlying conductor layer 5 at said section. According to an embodiment, the surface of the polysilicide interconnection 8 exposed through an aperture 10 in the Si2N4 film 9 is thermally oxidized within moistened oxygen at about 900 deg.C so that Si is diffused.
JP20845787A 1987-08-21 1987-08-21 Manufacture of semiconductor device Pending JPS6450545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20845787A JPS6450545A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20845787A JPS6450545A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6450545A true JPS6450545A (en) 1989-02-27

Family

ID=16556509

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20845787A Pending JPS6450545A (en) 1987-08-21 1987-08-21 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6450545A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126545U (en) * 1990-04-06 1991-12-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03126545U (en) * 1990-04-06 1991-12-19

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