ATE557395T1 - Strommessverstärker mit rückkopplungsschleife - Google Patents

Strommessverstärker mit rückkopplungsschleife

Info

Publication number
ATE557395T1
ATE557395T1 AT09786722T AT09786722T ATE557395T1 AT E557395 T1 ATE557395 T1 AT E557395T1 AT 09786722 T AT09786722 T AT 09786722T AT 09786722 T AT09786722 T AT 09786722T AT E557395 T1 ATE557395 T1 AT E557395T1
Authority
AT
Austria
Prior art keywords
input
memory cell
sensing circuit
sense node
feedback loop
Prior art date
Application number
AT09786722T
Other languages
English (en)
Inventor
William Redman-White
Original Assignee
Nxp Bv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nxp Bv filed Critical Nxp Bv
Application granted granted Critical
Publication of ATE557395T1 publication Critical patent/ATE557395T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G11C7/062—Differential amplifiers of non-latching type, e.g. comparators, long-tailed pairs

Landscapes

  • Read Only Memory (AREA)
AT09786722T 2008-07-28 2009-07-27 Strommessverstärker mit rückkopplungsschleife ATE557395T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP08104890 2008-07-28
PCT/IB2009/053263 WO2010013192A1 (en) 2008-07-28 2009-07-27 Current sense amplifier with feedback loop

Publications (1)

Publication Number Publication Date
ATE557395T1 true ATE557395T1 (de) 2012-05-15

Family

ID=41163779

Family Applications (1)

Application Number Title Priority Date Filing Date
AT09786722T ATE557395T1 (de) 2008-07-28 2009-07-27 Strommessverstärker mit rückkopplungsschleife

Country Status (6)

Country Link
US (1) US8400857B2 (de)
EP (1) EP2308049B1 (de)
JP (1) JP2011529242A (de)
CN (1) CN102105939B (de)
AT (1) ATE557395T1 (de)
WO (1) WO2010013192A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8885428B2 (en) * 2013-02-22 2014-11-11 Sandisk 3D Llc Smart read scheme for memory array sensing
US9484073B1 (en) 2015-12-15 2016-11-01 International Business Machines Corporation Current-mode sense amplifier
US10630293B2 (en) * 2017-03-31 2020-04-21 Adanced Micro Devices, Inc. High speed transmitter

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6016038B2 (ja) * 1980-09-10 1985-04-23 日本電気株式会社 記憶装置
US5317218A (en) * 1991-01-04 1994-05-31 United Microelectronics Corp. Current sense circuit with fast response
JP3489845B2 (ja) * 1992-03-26 2004-01-26 株式会社ルネサステクノロジ フラッシュメモリ、及びデータプロセッサ
US5410268A (en) 1993-09-08 1995-04-25 Advanced Micro Devices, Inc. Latching zero-power sense amplifier with cascode
US5519662A (en) * 1993-12-03 1996-05-21 Hitachi, Ltd. Semiconductor memory device
US5815452A (en) * 1997-06-12 1998-09-29 Enable Semiconductor, Inc. High-speed asynchronous memory with current-sensing sense amplifiers
IT1298939B1 (it) * 1998-02-23 2000-02-07 Sgs Thomson Microelectronics Amplificatore di rilevamento statico a retroazione per memorie non volatili
JP3840845B2 (ja) * 1999-08-02 2006-11-01 セイコーエプソン株式会社 半導体集積装置
US6137741A (en) * 1999-09-16 2000-10-24 Winbond Electronics Corporation Sense amplifier with cascode output
EP1094465A1 (de) 1999-10-20 2001-04-25 Infineon Technologies AG Speichereinrichtung
US6507523B2 (en) * 2000-12-20 2003-01-14 Micron Technology, Inc. Non-volatile memory with power standby
US6424571B1 (en) * 2001-05-01 2002-07-23 Micron Technology, Inc. Sense amplifier with data line precharge through a self-bias circuit and a precharge circuit
US6707715B2 (en) * 2001-08-02 2004-03-16 Stmicroelectronics, Inc. Reference generator circuit and method for nonvolatile memory devices
CN1272802C (zh) * 2001-10-15 2006-08-30 旺宏电子股份有限公司 增进感测放大器速度及稳定性的电路及方法
CN100431039C (zh) * 2002-02-06 2008-11-05 Nxp股份有限公司 用于读取存储单元的读取电路
US6987693B2 (en) * 2002-09-24 2006-01-17 Sandisk Corporation Non-volatile memory and method with reduced neighboring field errors
KR100615975B1 (ko) 2002-09-24 2006-08-28 쌘디스크 코포레이션 비휘발성 메모리 및 그 감지 방법
US7443757B2 (en) * 2002-09-24 2008-10-28 Sandisk Corporation Non-volatile memory and method with reduced bit line crosstalk errors
JP2003288791A (ja) * 2003-02-26 2003-10-10 Hitachi Ltd 半導体集積回路装置及びマイクロプロセッサ
US7075842B2 (en) * 2004-02-13 2006-07-11 Fujitsu Limited Differential current-mode sensing methods and apparatuses for memories
JP2005276310A (ja) * 2004-03-24 2005-10-06 Toshiba Corp 不揮発性半導体記憶装置
JP4271168B2 (ja) * 2004-08-13 2009-06-03 株式会社東芝 半導体記憶装置
US7408827B1 (en) * 2004-12-22 2008-08-05 Cypress Semiconductor Corp. Pulse generation scheme for improving the speed and robustness of a current sense amplifier without compromising circuit stability or output swing
US7362602B1 (en) * 2005-08-08 2008-04-22 Netlogic Microsystems, Inc. Sense amplifier circuit and method
US7391656B2 (en) * 2006-07-25 2008-06-24 Etron Technology, Inc. Self-feedback control pipeline architecture for memory read path applications

Also Published As

Publication number Publication date
US20110128808A1 (en) 2011-06-02
EP2308049B1 (de) 2012-05-09
JP2011529242A (ja) 2011-12-01
EP2308049A1 (de) 2011-04-13
CN102105939B (zh) 2013-12-04
WO2010013192A1 (en) 2010-02-04
CN102105939A (zh) 2011-06-22
US8400857B2 (en) 2013-03-19

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