ATE556429T1 - Halbleitervorrichtung und dessen herstellungsverfahren - Google Patents

Halbleitervorrichtung und dessen herstellungsverfahren

Info

Publication number
ATE556429T1
ATE556429T1 AT03007082T AT03007082T ATE556429T1 AT E556429 T1 ATE556429 T1 AT E556429T1 AT 03007082 T AT03007082 T AT 03007082T AT 03007082 T AT03007082 T AT 03007082T AT E556429 T1 ATE556429 T1 AT E556429T1
Authority
AT
Austria
Prior art keywords
semiconductor device
semiconductor substrate
ohmic
free energy
silicon carbide
Prior art date
Application number
AT03007082T
Other languages
English (en)
Inventor
Yuji Okamura
Masashi Matsushita
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Application granted granted Critical
Publication of ATE556429T1 publication Critical patent/ATE556429T1/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
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    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
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    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
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    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/1026—Compound semiconductors
    • H01L2924/1027—IV
    • H01L2924/10272—Silicon Carbide [SiC]

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Die Bonding (AREA)
AT03007082T 2002-03-28 2003-03-28 Halbleitervorrichtung und dessen herstellungsverfahren ATE556429T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002092530 2002-03-28
JP2002335414 2002-11-19

Publications (1)

Publication Number Publication Date
ATE556429T1 true ATE556429T1 (de) 2012-05-15

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
AT03007082T ATE556429T1 (de) 2002-03-28 2003-03-28 Halbleitervorrichtung und dessen herstellungsverfahren

Country Status (3)

Country Link
US (7) US7262434B2 (de)
EP (1) EP1349202B1 (de)
AT (1) ATE556429T1 (de)

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030015708A1 (en) 2001-07-23 2003-01-23 Primit Parikh Gallium nitride based diodes with low forward voltage and low reverse current operation
US7262434B2 (en) 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
JP2005167035A (ja) * 2003-12-03 2005-06-23 Kansai Electric Power Co Inc:The 炭化珪素半導体素子およびその製造方法
WO2005091988A2 (en) * 2004-03-19 2005-10-06 Fairchild Semiconductor Corporation Method and device with durable contact on silicon carbide
US7507650B2 (en) * 2004-03-26 2009-03-24 Central Research Institute Of Electric Power Industry Process for producing Schottky junction type semiconductor device
US7534633B2 (en) 2004-07-02 2009-05-19 Cree, Inc. LED with substrate modifications for enhanced light extraction and method of making same
US7812441B2 (en) 2004-10-21 2010-10-12 Siliconix Technology C.V. Schottky diode with improved surge capability
US7394158B2 (en) 2004-10-21 2008-07-01 Siliconix Technology C.V. Solderable top metal for SiC device
US9070850B2 (en) 2007-10-31 2015-06-30 Cree, Inc. Light emitting diode package and method for fabricating same
US9419092B2 (en) 2005-03-04 2016-08-16 Vishay-Siliconix Termination for SiC trench devices
US7834376B2 (en) * 2005-03-04 2010-11-16 Siliconix Technology C. V. Power semiconductor switch
JP2006332230A (ja) * 2005-05-25 2006-12-07 Ecotron:Kk ショットキーバリアダイオード及びその製造方法
US8120153B1 (en) 2005-09-16 2012-02-21 University Of Central Florida Research Foundation, Inc. High-temperature, wirebondless, injection-molded, ultra-compact hybrid power module
US8368165B2 (en) * 2005-10-20 2013-02-05 Siliconix Technology C. V. Silicon carbide Schottky diode
JP5037003B2 (ja) 2005-11-25 2012-09-26 一般財団法人電力中央研究所 ショットキーバリアダイオードおよびその使用方法
DE102006001195A1 (de) 2006-01-10 2007-07-12 Sms Demag Ag Verfahren zum Gieß-Walzen mit erhöhter Gießgeschwindigkeit und daran anschließendem Warmwalzen von relativ dünnen Metall-,insbesondere Stahlwerkstoff-Strängen,und Gieß-Walz-Einrichtung
JP2007220889A (ja) * 2006-02-16 2007-08-30 Central Res Inst Of Electric Power Ind ショットキー接合型半導体素子およびその製造方法
US7804147B2 (en) 2006-07-31 2010-09-28 Cree, Inc. Light emitting diode package element with internal meniscus for bubble free lens placement
JP2009545885A (ja) * 2006-07-31 2009-12-24 ヴィシェイ−シリコニックス ＳｉＣショットキーダイオード用モリブデンバリア金属および製造方法
JP5078314B2 (ja) * 2006-10-18 2012-11-21 ローム株式会社 ショットキーバリアダイオードおよびその製造方法
US7813400B2 (en) 2006-11-15 2010-10-12 Cree, Inc. Group-III nitride based laser diode and method for fabricating same
US7834367B2 (en) * 2007-01-19 2010-11-16 Cree, Inc. Low voltage diode with reduced parasitic resistance and method for fabricating
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
US8519437B2 (en) 2007-09-14 2013-08-27 Cree, Inc. Polarization doping in nitride based diodes
JP2009094392A (ja) * 2007-10-11 2009-04-30 Mitsubishi Electric Corp 炭化珪素半導体装置の製造方法
WO2009054140A1 (ja) * 2007-10-24 2009-04-30 Panasonic Corporation 半導体素子およびその製造方法
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US8866169B2 (en) 2007-10-31 2014-10-21 Cree, Inc. LED package with increased feature sizes
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
US8816356B2 (en) * 2008-09-30 2014-08-26 Youngstown State University Silicon carbide barrier diode
JP4858791B2 (ja) * 2009-05-22 2012-01-18 住友電気工業株式会社 半導体装置およびその製造方法
US8415692B2 (en) 2009-07-06 2013-04-09 Cree, Inc. LED packages with scattering particle regions
WO2011045834A1 (ja) * 2009-10-14 2011-04-21 三菱電機株式会社 電力用半導体装置
US8604461B2 (en) 2009-12-16 2013-12-10 Cree, Inc. Semiconductor device structures with modulated doping and related methods
US8536615B1 (en) 2009-12-16 2013-09-17 Cree, Inc. Semiconductor device structures with modulated and delta doping and related methods
JP5598015B2 (ja) * 2010-02-23 2014-10-01 株式会社デンソー ショットキーバリアダイオードを備えた炭化珪素半導体装置およびその製造方法
JP5728954B2 (ja) * 2011-01-13 2015-06-03 住友電気工業株式会社 炭化珪素半導体装置の製造方法
US10367089B2 (en) * 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
KR102014088B1 (ko) * 2012-03-20 2019-08-26 엘지이노텍 주식회사 메모리카드, 메모리 카드용 인쇄회로기판 및 이의 제조 방법
US9576868B2 (en) 2012-07-30 2017-02-21 General Electric Company Semiconductor device and method for reduced bias temperature instability (BTI) in silicon carbide devices
US9425153B2 (en) 2013-04-04 2016-08-23 Monolith Semiconductor Inc. Semiconductor devices comprising getter layers and methods of making and using the same
JP6206159B2 (ja) * 2013-12-17 2017-10-04 三菱電機株式会社 半導体装置の製造方法
US10797137B2 (en) * 2017-06-30 2020-10-06 Taiwan Semiconductor Manufacturing Co., Ltd. Method for reducing Schottky barrier height and semiconductor device with reduced Schottky barrier height
US10608079B2 (en) * 2018-02-06 2020-03-31 General Electric Company High energy ion implantation for junction isolation in silicon carbide devices
EP3671861A1 (de) * 2018-12-17 2020-06-24 Nexperia B.V. Halbleiterbauelement und elektrischer kontakt
WO2023239942A1 (en) * 2022-06-10 2023-12-14 The Board Of Trustees Of The Leland Stanford Junior University Passivation and high temperature oxidation of iridium oxide schottky contacts for iii-nitride devices

Family Cites Families (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3030704A (en) * 1957-08-16 1962-04-24 Gen Electric Method of making non-rectifying contacts to silicon carbide
NL107889C (de) 1958-08-26
JPS5136878A (en) * 1974-09-14 1976-03-27 Tokyo Shibaura Electric Co Handotaisochi no seizohoho
US4032364A (en) * 1975-02-28 1977-06-28 General Electric Company Deep diode silicon controlled rectifier
JPS5267961A (en) * 1975-12-03 1977-06-06 Mitsubishi Electric Corp Electrode formation of semiconductor unit
US4213840A (en) * 1978-11-13 1980-07-22 Avantek, Inc. Low-resistance, fine-line semiconductor device and the method for its manufacture
US5200349A (en) * 1980-12-30 1993-04-06 Fujitsu Limited Semiconductor device including schotky gate of silicide and method for the manufacture of the same
US4691435A (en) * 1981-05-13 1987-09-08 International Business Machines Corporation Method for making Schottky diode having limited area self-aligned guard ring
US4398344A (en) * 1982-03-08 1983-08-16 International Rectifier Corporation Method of manufacture of a schottky using platinum encapsulated between layers of palladium sintered into silicon surface
EP0182088B1 (de) * 1984-10-26 1990-03-21 Siemens Aktiengesellschaft Schottky-Kontakt auf einer Halbleiteroberfläche und Verfahren zu dessen Herstellung
US4669180A (en) * 1984-12-18 1987-06-02 Advanced Micro Devices, Inc. Method of forming emitter coupled logic bipolar memory cell using polysilicon Schottky diodes for coupling
US4674177A (en) * 1984-12-19 1987-06-23 Eaton Corporation Method for making an edge junction schottky diode
JPS6271271A (ja) 1985-09-24 1987-04-01 Sharp Corp 炭化珪素半導体の電極構造
US5055424A (en) * 1989-06-29 1991-10-08 The United States Of America As Represented By The Secretary Of The Navy Method for fabricating ohmic contacts on semiconducting diamond
US5449925A (en) * 1994-05-04 1995-09-12 North Carolina State University Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices
US5442200A (en) * 1994-06-03 1995-08-15 Advanced Technology Materials, Inc. Low resistance, stable ohmic contacts to silcon carbide, and method of making the same
JPH0897441A (ja) * 1994-09-26 1996-04-12 Fuji Electric Co Ltd 炭化けい素ショットキーダイオードの製造方法
JP2995284B2 (ja) 1995-08-25 1999-12-27 工業技術院長 電極作成方法
US5929523A (en) * 1996-03-07 1999-07-27 3C Semiconductor Corporation Os rectifying Schottky and ohmic junction and W/WC/TiC ohmic contacts on SiC
EP0831538A3 (de) * 1996-09-19 1999-07-14 Canon Kabushiki Kaisha Photovoltaisches Bauelement mit einer spezifisch dotierten Schicht
US6058030A (en) * 1997-11-20 2000-05-02 Intersil Corporation Multiple output DC-to-DC converter having enhanced noise margin and related methods
US6362495B1 (en) * 1998-03-05 2002-03-26 Purdue Research Foundation Dual-metal-trench silicon carbide Schottky pinch rectifier
US6281124B1 (en) * 1998-09-02 2001-08-28 Micron Technology, Inc. Methods and systems for forming metal-containing films on substrates
ATE357744T1 (de) * 1998-09-02 2007-04-15 Siced Elect Dev Gmbh & Co Kg Halbleitervorrichtung mit ohmscher kontaktierung und verfahren zur ohmschen kontaktierung einer halbleitervorrichtung
EP1125320A1 (de) * 1998-09-16 2001-08-22 Cree, Inc. Herstellung von ohmschen rückseitenkontakten zu vertikal angeordneten halbleitervorrichtungen bei niedriger temperatur
US6884644B1 (en) * 1998-09-16 2005-04-26 Cree, Inc. Low temperature formation of backside ohmic contacts for vertical devices
DE19939107A1 (de) 1998-09-23 2000-03-30 Siemens Ag Verfahren zum Herstellen eines ohmschen Kontakts
JP2000164528A (ja) 1998-11-25 2000-06-16 Sanyo Electric Co Ltd ショットキ接合を有する炭化珪素半導体装置
JP3646548B2 (ja) * 1999-01-11 2005-05-11 富士電機ホールディングス株式会社 ＳｉＣ半導体デバイス
JP4100652B2 (ja) 1999-08-10 2008-06-11 富士電機デバイステクノロジー株式会社 ＳｉＣショットキーダイオード
FR2798224B1 (fr) * 1999-09-08 2003-08-29 Commissariat Energie Atomique Realisation d'un collage electriquement conducteur entre deux elements semi-conducteurs.
US6410460B1 (en) 2000-05-15 2002-06-25 Ramot University Authority For Applied Research And Industrial Development Ltd. Technology for thermodynamically stable contacts for binary wide band gap semiconductors
US6544674B2 (en) 2000-08-28 2003-04-08 Boston Microsystems, Inc. Stable electrical contact for silicon carbide devices
US6573128B1 (en) * 2000-11-28 2003-06-03 Cree, Inc. Epitaxial edge termination for silicon carbide Schottky devices and methods of fabricating silicon carbide devices incorporating same
JP2002252233A (ja) * 2001-02-22 2002-09-06 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US6562706B1 (en) * 2001-12-03 2003-05-13 Industrial Technology Research Institute Structure and manufacturing method of SiC dual metal trench Schottky diode
US7262434B2 (en) * 2002-03-28 2007-08-28 Rohm Co., Ltd. Semiconductor device with a silicon carbide substrate and ohmic metal layer
JP2004022796A (ja) 2002-06-17 2004-01-22 Matsushita Electric Ind Co Ltd 炭化珪素半導体素子およびその形成方法

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US20030183895A1 (en) 2003-10-02
US7294858B2 (en) 2007-11-13
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US20100252838A1 (en) 2010-10-07
US7262434B2 (en) 2007-08-28
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US20150214294A1 (en) 2015-07-30
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