ATE544231T1 - Integrierte doherty- hochleistungsverstärkeranordnung - Google Patents
Integrierte doherty- hochleistungsverstärkeranordnungInfo
- Publication number
- ATE544231T1 ATE544231T1 AT05751755T AT05751755T ATE544231T1 AT E544231 T1 ATE544231 T1 AT E544231T1 AT 05751755 T AT05751755 T AT 05751755T AT 05751755 T AT05751755 T AT 05751755T AT E544231 T1 ATE544231 T1 AT E544231T1
- Authority
- AT
- Austria
- Prior art keywords
- lumped element
- arrangement
- main
- predetermined phase
- wideband
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/4813—Connecting within a semiconductor or solid-state body, i.e. fly wire, bridge wire
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01055—Cesium [Cs]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
- H01L2924/141—Analog devices
- H01L2924/1423—Monolithic Microwave Integrated Circuit [MMIC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19102—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device
- H01L2924/19104—Disposition of discrete passive components in a stacked assembly with the semiconductor or solid state device on the semiconductor or solid-state device, i.e. passive-on-chip
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/198—A hybrid coupler being used as coupling circuit between stages of an amplifier circuit
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/225—Indexing scheme relating to amplifiers the input circuit of an amplifying stage comprising an LC-network
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04103046 | 2004-06-29 | ||
| PCT/IB2005/052131 WO2006003608A1 (en) | 2004-06-29 | 2005-06-28 | Integrated doherty type amplifier arrangement with high power efficiency |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE544231T1 true ATE544231T1 (de) | 2012-02-15 |
Family
ID=35004261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT05751755T ATE544231T1 (de) | 2004-06-29 | 2005-06-28 | Integrierte doherty- hochleistungsverstärkeranordnung |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7884668B2 (de) |
| EP (1) | EP1763921B1 (de) |
| JP (1) | JP2008505521A (de) |
| CN (1) | CN100542011C (de) |
| AT (1) | ATE544231T1 (de) |
| WO (1) | WO2006003608A1 (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009539277A (ja) * | 2006-04-26 | 2009-11-12 | エヌエックスピー ビー ヴィ | 高出力集積ｒｆ増幅器 |
| GB2437573B (en) * | 2006-04-28 | 2008-04-23 | Motorola Inc | Combiner circuit, amplifier circuit and RF transmitter including the combiner circuit and the amplifier circuit |
| JP4753255B2 (ja) * | 2006-09-01 | 2011-08-24 | ソニー・エリクソン・モバイルコミュニケーションズ株式会社 | 電力増幅装置および携帯電話端末 |
| JP4821618B2 (ja) * | 2007-01-15 | 2011-11-24 | パナソニック株式会社 | 高周波電力増幅器のための出力電力検波器 |
| KR100814415B1 (ko) * | 2007-02-14 | 2008-03-18 | 포항공과대학교 산학협력단 | 하모닉 제어 회로를 이용한 고효율 도허티 전력 증폭기 |
| US8228123B2 (en) * | 2007-08-29 | 2012-07-24 | Nxp B.V. | Integrated Doherty amplifier |
| KR101107827B1 (ko) | 2007-12-21 | 2012-01-31 | 엔엑스피 비 브이 | 최소 출력 네트워크를 포함한 3-웨이 도허티 증폭기 |
| US20090219908A1 (en) * | 2008-02-29 | 2009-09-03 | Ahmadreza Rofougaran | Method and system for processing signals via diplexers embedded in an integrated circuit package |
| US7936212B2 (en) * | 2008-05-09 | 2011-05-03 | Cree, Inc. | Progressive power generating amplifiers |
| EP2159912A1 (de) * | 2008-08-29 | 2010-03-03 | Alcatel, Lucent | Mehrband-Doherty-Verstärker |
| CN101567665B (zh) * | 2008-12-26 | 2012-01-25 | 芯通科技（成都）有限公司 | 一种数字Doherty功率放大器 |
| CN101534093B (zh) * | 2009-04-14 | 2011-08-10 | 武汉正维电子技术有限公司 | 用于移动通信基站系统功率放大器的末级三路功率合成放大电路 |
| DE102009023289B4 (de) * | 2009-05-29 | 2013-02-28 | Helmut Schlösser | Kunststoffrohr |
| US8410853B2 (en) | 2010-06-01 | 2013-04-02 | Nxp B.V. | Inductive circuit arrangement |
| US7939864B1 (en) * | 2010-06-01 | 2011-05-10 | Nxp B.V. | Inductive bond-wire circuit |
| EP2403135B1 (de) * | 2010-06-24 | 2013-12-11 | Alcatel Lucent | Leistungsverstärker für mobile Telekommunikation |
| EP2413498A1 (de) * | 2010-07-30 | 2012-02-01 | Nxp B.V. | Doherty-Verstärker |
| US8400216B2 (en) * | 2010-11-05 | 2013-03-19 | Postech Academy-Industry Foundation | 3-way Doherty power amplifier using driving amplifier |
| EP2482448A1 (de) * | 2011-01-31 | 2012-08-01 | Alcatel Lucent | Doherty-Verstärker und Verfahren zum Betrieb eines Doherty-Verstärkers |
| US9306502B2 (en) | 2011-05-09 | 2016-04-05 | Qualcomm Incorporated | System providing switchable impedance transformer matching for power amplifiers |
| CN102291092B (zh) * | 2011-06-14 | 2014-04-30 | 中国科学技术大学 | 一种逆f类功率放大器 |
| US8339201B1 (en) * | 2011-06-17 | 2012-12-25 | Infineon Technologies Ag | Wideband doherty amplifier circuit having a constant impedance combiner |
| CN102545788A (zh) * | 2011-12-29 | 2012-07-04 | 武汉正维电子技术有限公司 | 一种多路非对称Doherty放大器 |
| US8970297B2 (en) | 2012-03-19 | 2015-03-03 | Qualcomm Incorporated | Reconfigurable input power distribution doherty amplifier with improved efficiency |
| EP2665181B1 (de) * | 2012-05-17 | 2014-12-17 | Nxp B.V. | Verstärkerschaltung |
| US9685915B2 (en) | 2012-10-31 | 2017-06-20 | Nxp Usa, Inc. | Amplification stage and wideband power amplifier |
| US9031518B2 (en) | 2012-12-17 | 2015-05-12 | Qualcomm Incorporated | Concurrent hybrid matching network |
| EP2983291B1 (de) * | 2014-08-07 | 2017-12-06 | Ampleon Netherlands B.V. | Integrierter 3-Weg-Doherty-Verstärker |
| US9503028B2 (en) * | 2015-01-30 | 2016-11-22 | Mitsubishi Electric Research Laboratories, Inc. | Three-way sequential power amplifier system for wideband RF signal |
| EP3255796B1 (de) | 2016-06-08 | 2020-01-08 | NXP USA, Inc. | Verfahren und vorrichtung zur erzeugung eines ladungspumpensteuersignals |
| EP3312990B1 (de) | 2016-10-24 | 2019-12-11 | NXP USA, Inc. | Verstärkervorrichtungen mit eingangsleitungs-abschlussschaltungen |
| CN111416578B (zh) * | 2020-05-20 | 2023-05-26 | 优镓科技(北京)有限公司 | 基于低Q输出网络的宽带集成Doherty功率放大器 |
| US11277099B2 (en) | 2020-06-10 | 2022-03-15 | Nxp Usa, Inc. | Symmetric Doherty amplifier with in-package combining node |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5420541A (en) * | 1993-06-04 | 1995-05-30 | Raytheon Company | Microwave doherty amplifier |
| US6085074A (en) * | 1997-02-28 | 2000-07-04 | Motorola, Inc. | Apparatus and method for amplifying an amplitude-varying signal |
| SE510953C2 (sv) | 1997-11-21 | 1999-07-12 | Ericsson Telefon Ab L M | En förstärkare och ett förfarande i effektförstärkaren |
| US6124742A (en) * | 1998-01-26 | 2000-09-26 | Motorola, Inc. | Wide bandwidth frequency multiplier |
| US6262629B1 (en) * | 1999-07-06 | 2001-07-17 | Motorola, Inc. | High efficiency power amplifier having reduced output matching networks for use in portable devices |
| SE520760C2 (sv) * | 2000-06-06 | 2003-08-19 | Ericsson Telefon Ab L M | Doherty-förstärkare av flerstegstyp |
| SE516847C2 (sv) * | 2000-07-07 | 2002-03-12 | Ericsson Telefon Ab L M | Sammansatt förstärkare samt sändare som innefattar en sådan förstärkare |
| SE0004479D0 (sv) | 2000-12-05 | 2000-12-05 | Ericsson Telefon Ab L M | Method and arrangement relating to electronic compensation |
| US6731172B2 (en) * | 2001-01-16 | 2004-05-04 | Skyworks Solutions, Inc. | Doherty power amplifier with integrated quarter wave transformer/combiner circuit |
| US20020186079A1 (en) * | 2001-06-08 | 2002-12-12 | Kobayashi Kevin W. | Asymmetrically biased high linearity balanced amplifier |
| SE522479C2 (sv) * | 2002-01-16 | 2004-02-10 | Ericsson Telefon Ab L M | Sammansatt effektförstärkare |
| US6737922B2 (en) * | 2002-01-28 | 2004-05-18 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using unequal input power division |
| US6791417B2 (en) * | 2002-01-28 | 2004-09-14 | Cree Microwave, Inc. | N-way RF power amplifier circuit with increased back-off capability and power added efficiency using selected phase lengths and output impedances |
| KR100553252B1 (ko) * | 2002-02-01 | 2006-02-20 | 아바고테크놀로지스코리아 주식회사 | 휴대용 단말기의 전력 증폭 장치 |
| JP4792273B2 (ja) * | 2005-10-18 | 2011-10-12 | 株式会社日立国際電気 | 増幅器 |
| US7486136B2 (en) * | 2006-09-26 | 2009-02-03 | Infineon Technologies Ag | Power amplifier |
-
2005
- 2005-06-28 WO PCT/IB2005/052131 patent/WO2006003608A1/en active Application Filing
- 2005-06-28 AT AT05751755T patent/ATE544231T1/de active
- 2005-06-28 US US11/631,206 patent/US7884668B2/en active Active
- 2005-06-28 JP JP2007518786A patent/JP2008505521A/ja not_active Withdrawn
- 2005-06-28 CN CNB2005800220922A patent/CN100542011C/zh not_active Expired - Fee Related
- 2005-06-28 EP EP05751755A patent/EP1763921B1/de not_active Not-in-force
Also Published As
| Publication number | Publication date |
|---|---|
| EP1763921A1 (de) | 2007-03-21 |
| US7884668B2 (en) | 2011-02-08 |
| EP1763921B1 (de) | 2012-02-01 |
| CN1977447A (zh) | 2007-06-06 |
| JP2008505521A (ja) | 2008-02-21 |
| CN100542011C (zh) | 2009-09-16 |
| WO2006003608A1 (en) | 2006-01-12 |
| US20090212858A1 (en) | 2009-08-27 |
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