ATE537562T1 - Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs - Google Patents

Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs

Info

Publication number
ATE537562T1
ATE537562T1 AT06799532T AT06799532T ATE537562T1 AT E537562 T1 ATE537562 T1 AT E537562T1 AT 06799532 T AT06799532 T AT 06799532T AT 06799532 T AT06799532 T AT 06799532T AT E537562 T1 ATE537562 T1 AT E537562T1
Authority
AT
Austria
Prior art keywords
solar cells
type
multicrystalline silicon
thin film
producing
Prior art date
Application number
AT06799532T
Other languages
English (en)
Inventor
Yuji Komatsu
Hanno Goldbach
Rudolf Schropp
Lambert Geerligs
Original Assignee
Stichting Energie
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stichting Energie filed Critical Stichting Energie
Application granted granted Critical
Publication of ATE537562T1 publication Critical patent/ATE537562T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/129—Passivating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
AT06799532T 2005-10-14 2006-10-04 Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs ATE537562T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL1030200A NL1030200C2 (nl) 2005-10-14 2005-10-14 Werkwijze voor het vervaardigen van n-type multikristallijn silicium zonnecellen.
PCT/NL2006/050242 WO2007043881A1 (en) 2005-10-14 2006-10-04 Method of manufacturing n-type multicrystalline silicon solar cells

Publications (1)

Publication Number Publication Date
ATE537562T1 true ATE537562T1 (de) 2011-12-15

Family

ID=36218149

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06799532T ATE537562T1 (de) 2005-10-14 2006-10-04 Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs

Country Status (10)

Country Link
US (1) US20080283120A1 (de)
EP (1) EP1935034B1 (de)
JP (1) JP2009512214A (de)
KR (1) KR20080074127A (de)
CN (1) CN101331615B (de)
AT (1) ATE537562T1 (de)
ES (1) ES2378082T3 (de)
MY (1) MY149035A (de)
NL (1) NL1030200C2 (de)
WO (1) WO2007043881A1 (de)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007235000A (ja) * 2006-03-03 2007-09-13 Eudyna Devices Inc 半導体の処理方法、半導体装置およびその製造方法
NL2000248C2 (nl) * 2006-09-25 2008-03-26 Ecn Energieonderzoek Ct Nederl Werkwijze voor het vervaardigen van kristallijn-silicium zonnecellen met een verbeterde oppervlaktepassivering.
DE102007054384A1 (de) * 2007-11-14 2009-05-20 Institut Für Solarenergieforschung Gmbh Verfahren zum Herstellen einer Solarzelle mit einer oberflächenpassivierenden Dielektrikumdoppelschicht und entsprechende Solarzelle
KR20100033091A (ko) * 2008-09-19 2010-03-29 한국전자통신연구원 화학기상증착법에 의한 비정질 실리콘 박막의 증착방법
NL2002512C2 (en) * 2009-02-10 2010-08-11 Stichting Energie Method and system for removal of a surface layer of a silicon solar cell substrate.
US8420517B2 (en) * 2009-07-02 2013-04-16 Innovalight, Inc. Methods of forming a multi-doped junction with silicon-containing particles
US8163587B2 (en) 2009-07-02 2012-04-24 Innovalight, Inc. Methods of using a silicon nanoparticle fluid to control in situ a set of dopant diffusion profiles
CN101853898A (zh) * 2010-03-31 2010-10-06 晶澳(扬州)太阳能光伏工程有限公司 一种n型晶体硅太阳电池的制备工艺
CN101853899B (zh) * 2010-03-31 2012-03-14 晶澳(扬州)太阳能光伏工程有限公司 一种利用局域背场制备太阳能电池的方法
CN101853897A (zh) * 2010-03-31 2010-10-06 晶澳(扬州)太阳能光伏工程有限公司 一种n型晶体硅局部铝背发射极太阳电池的制备方法
CN101958364B (zh) * 2010-04-20 2012-05-16 常州天合光能有限公司 一种背面钝化的太阳能电池的生产方法
CN102315309B (zh) * 2010-06-30 2013-10-02 比亚迪股份有限公司 一种太阳能电池片的制备方法
WO2012012167A1 (en) 2010-06-30 2012-01-26 Innovalight, Inc Methods of forming a floating junction on a solar cell with a particle masking layer
CN102044575B (zh) * 2010-12-02 2012-08-29 江苏大学 一种表面等离子体氢化硅薄膜太阳电池
FR2971627A1 (fr) * 2011-02-15 2012-08-17 Commissariat Energie Atomique Procédé de réalisation d'une structure a émetteur sélectif
CN104835864B (zh) * 2011-03-23 2016-10-19 南通大学 一种太阳能电池
CN102569501B (zh) * 2011-12-15 2014-06-18 苏州阿特斯阳光电力科技有限公司 一种多晶硅太阳能电池的磷扩散方法
CN102709401B (zh) * 2012-06-29 2015-06-24 英利能源（中国）有限公司 一种n型太阳能电池制作方法
CN102790135A (zh) * 2012-08-29 2012-11-21 浚鑫科技股份有限公司 一种太阳能电池制作方法
US9202959B2 (en) * 2012-09-25 2015-12-01 International Business Machines Corporation Embedded junction in hetero-structured back-surface field for photovoltaic devices
JP5889163B2 (ja) * 2012-11-02 2016-03-22 三菱電機株式会社 光起電力装置およびその製造方法、光起電力モジュール
US20150280018A1 (en) * 2014-03-26 2015-10-01 Seung Bum Rim Passivation of light-receiving surfaces of solar cells
CN106328735A (zh) * 2016-11-15 2017-01-11 江南大学 一种c‑Si/a‑Si/mc‑Si太阳电池结构及其制备方法
KR20200067545A (ko) * 2018-12-04 2020-06-12 엘지전자 주식회사 태양 전지 제조 방법
CN111370537A (zh) * 2020-03-24 2020-07-03 浙江晶科能源有限公司 一种离子注入后的清洗方法
CN112466970B (zh) * 2020-11-26 2022-05-13 安徽光智科技有限公司 双色红外焦平面探测器及其台面刻蚀工艺方法
CN113161447B (zh) * 2021-02-07 2023-11-28 福建新峰二维材料科技有限公司 一种铸造单晶或多晶类硅片的磷氢退火预处理方法
CN113013296B (zh) * 2021-03-05 2023-07-28 赛维Ldk太阳能高科技(新余)有限公司 铸造单晶硅片黑丝的去除方法、hit异质结太阳能电池及其制备方法
CN113644157A (zh) * 2021-08-10 2021-11-12 浙江大学 一种高效铸造类单晶硅双面太阳电池结构及其制备方法
IT202300009720A1 (it) 2023-05-15 2024-11-15 Iinformatica S R L Cella triboelettrica fotovoltaica-piroelettrica per la produzione di energia pulita dal vento e da irradiazione luminosa

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5705828A (en) * 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
JP2891600B2 (ja) * 1992-12-25 1999-05-17 三洋電機株式会社 ヘテロ接合デバイスの製造方法
JP2001326370A (ja) * 2000-05-12 2001-11-22 Mitsubishi Electric Corp 太陽電池の製造方法及びその太陽電池
JP2002118078A (ja) * 2000-10-12 2002-04-19 Toshiba Corp 半導体装置の製造方法及び半導体装置
JP4070483B2 (ja) * 2002-03-05 2008-04-02 三洋電機株式会社 光起電力装置並びにその製造方法
JP2005159171A (ja) * 2003-11-27 2005-06-16 Kyocera Corp 太陽電池素子およびその製造方法
EP1560272B1 (de) * 2004-01-29 2016-04-27 Panasonic Intellectual Property Management Co., Ltd. Solarzellenmodul
WO2005083799A1 (en) * 2004-02-24 2005-09-09 Bp Corporation North America Inc Process for manufacturing photovoltaic cells
US7556748B2 (en) * 2005-04-14 2009-07-07 E. I. Du Pont De Nemours And Company Method of manufacture of semiconductor device and conductive compositions used therein

Also Published As

Publication number Publication date
CN101331615A (zh) 2008-12-24
WO2007043881A1 (en) 2007-04-19
EP1935034B1 (de) 2011-12-14
US20080283120A1 (en) 2008-11-20
JP2009512214A (ja) 2009-03-19
CN101331615B (zh) 2010-12-22
KR20080074127A (ko) 2008-08-12
NL1030200C2 (nl) 2007-04-17
ES2378082T3 (es) 2012-04-04
MY149035A (en) 2013-06-28
EP1935034A1 (de) 2008-06-25

Similar Documents

Publication Publication Date Title
ATE537562T1 (de) Verfahren zum herstellen von multikristallinen silizium-solarzellen des n-typs
WO2011143449A3 (en) Method of manufacturing crystalline silicon solar cells using epitaxial deposition
WO2010062343A3 (en) Thin two sided single crystal solar cell and manufacturing process thereof
ATE545157T1 (de) Verfahren zur herstellung einer solarzelle sowie damit hergestellte solarzelle
ES2336615T3 (es) Procedimiento de metalizacion de celulas fotovoltaicas de multiples recocidos.
WO2008037658A3 (fr) Procede de realisation de cellule photovoltaique a heterojonction en face arriere
WO2009140117A3 (en) Solar cell having a high quality rear surface spin-on dielectric layer
WO2011087341A3 (ko) 후면전극형 태양전지의 제조방법
WO2011152986A3 (en) Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
WO2011073868A3 (fr) Cellule photovoltaïque heterojonction a contact arriere
WO2007103598A3 (en) Silicon photovoltaic cell junction formed from thin film doping source
WO2009140116A3 (en) Solar cell spin-on based process for simultaneous diffusion and passivation
FR2955702B1 (fr) Cellule photovoltaique comprenant un film mince de passivation en oxyde cristallin de silicium et procede de realisation
DE602007011470D1 (de) Verfahren zur herstellung kristalliner silizium-so
WO2011126660A3 (en) Method of forming a negatively charged passivation layer over a diffused p-type region
EP2665089A4 (de) Zusammensetzung zur bildung einer p-leitenden diffusionsschicht, verfahren zur herstellung eines siliziumsubstrats mit einer p-leitenden diffusionsschicht, verfahren zur herstellung einer photovoltaischen zelle und photovoltaische zelle
WO2009107955A3 (en) Solar cell and method for manufacturing the same
WO2009095764A8 (en) Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal
TW200635058A (en) Back junction solar cell and process for producing the same
TW200802614A (en) A method of ultra-shallow junction formation using si film alloyed with carbon
WO2009077103A8 (en) Thin-film solar cell and process for its manufacture
WO2008069675A3 (en) Multicrystalline silicon solar cells
WO2009038323A3 (en) Solar cell and method for manufacturing the same
CN105633174A (zh) 一种具有背面钝化结构的单晶硅太阳能电池及其制备方法
WO2010110590A3 (ko) 태양 전지 및 그 제조 방법