ATE532206T1 - Verfahren und vorrichtung zum dotieren, diffusion und oxidieren von siliziumscheiben unter vermindertem druck - Google Patents

Verfahren und vorrichtung zum dotieren, diffusion und oxidieren von siliziumscheiben unter vermindertem druck

Info

Publication number
ATE532206T1
ATE532206T1 AT02730404T AT02730404T ATE532206T1 AT E532206 T1 ATE532206 T1 AT E532206T1 AT 02730404 T AT02730404 T AT 02730404T AT 02730404 T AT02730404 T AT 02730404T AT E532206 T1 ATE532206 T1 AT E532206T1
Authority
AT
Austria
Prior art keywords
gas
dopping
diffusing
reduced pressure
under reduced
Prior art date
Application number
AT02730404T
Other languages
English (en)
Inventor
Yvon Pellegrin
Original Assignee
Semco Engineering S A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semco Engineering S A filed Critical Semco Engineering S A
Application granted granted Critical
Publication of ATE532206T1 publication Critical patent/ATE532206T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/005—Oxydation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Chemical Vapour Deposition (AREA)
  • Silicon Compounds (AREA)
AT02730404T 2001-05-14 2002-05-14 Verfahren und vorrichtung zum dotieren, diffusion und oxidieren von siliziumscheiben unter vermindertem druck ATE532206T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR0106863A FR2824663B1 (fr) 2001-05-14 2001-05-14 Procede et dispositif de dopage, diffusion et oxydation pyrolithique de plaquettes de silicium a pression reduite
PCT/FR2002/001620 WO2002093621A1 (fr) 2001-05-14 2002-05-14 Procede et dispositif de dopage, diffusion et oxydation de plaquettes de silicium a pression reduite

Publications (1)

Publication Number Publication Date
ATE532206T1 true ATE532206T1 (de) 2011-11-15

Family

ID=8863633

Family Applications (1)

Application Number Title Priority Date Filing Date
AT02730404T ATE532206T1 (de) 2001-05-14 2002-05-14 Verfahren und vorrichtung zum dotieren, diffusion und oxidieren von siliziumscheiben unter vermindertem druck

Country Status (10)

Country Link
US (1) US7524745B2 (de)
EP (1) EP1393351B1 (de)
JP (1) JP4996035B2 (de)
KR (2) KR100926994B1 (de)
CN (1) CN1275290C (de)
AT (1) ATE532206T1 (de)
DE (1) DE02730404T1 (de)
FR (1) FR2824663B1 (de)
HK (1) HK1067786A1 (de)
WO (1) WO2002093621A1 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109830573A (zh) * 2019-03-22 2019-05-31 南京林业大学 一种改进的用于太阳电池硅片处理的槽式臭氧处理系统

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007063363B4 (de) 2007-05-21 2016-05-12 Centrotherm Photovoltaics Ag Vorrichtung zur Dotierung und Beschichtung von Halbleitermaterial bei niedrigem Druck
FR2944138B1 (fr) * 2009-04-06 2012-12-07 Semco Engineering Sa Procede de dopage au bore de plaquettes de silicium
US20110002084A1 (en) 2009-07-06 2011-01-06 Samsung Electro-Mechanics Co., Ltd. Chip-type electric double layer capacitor and method of manufacturing the same
FR2959351B1 (fr) 2010-04-26 2013-11-08 Photowatt Int Procede de preparation d’une structure de type n+pp+ ou de type p+nn+ sur plaques de silicium
US8506897B2 (en) 2010-05-07 2013-08-13 Greenzapr, Inc. Mobile UV sterilization unit for fields and method thereof
US8747770B2 (en) 2010-05-07 2014-06-10 Greenzapr, Inc. Mobile UV sterilization unit for fields and method thereof
TWI545298B (zh) * 2010-06-04 2016-08-11 Shinetsu Chemical Co Heat treatment furnace
FR3101196B1 (fr) * 2019-09-20 2021-10-01 Semco Smartech France Dispositif d'homogeneisation
KR102359846B1 (ko) 2021-08-13 2022-02-09 (주)피앤테크 증착 장비 내 균일한 가스 공급을 위한 가스 공급 장치

Family Cites Families (18)

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JPS60136135U (ja) * 1984-02-20 1985-09-10 株式会社日立国際電気 半導体製造装置のボ−ト搬送装置
CA1203921A (en) * 1984-05-18 1986-04-29 Laszlo Szolgyemy Diffusion method to produce semiconductor devices
JPS6317300A (ja) * 1986-07-08 1988-01-25 Shinetsu Sekiei Kk 石英ガラス製炉芯管
JPH0311621A (ja) * 1989-06-08 1991-01-18 Nec Corp 半導体ウエハ熱処理装置
JP2744935B2 (ja) * 1989-12-04 1998-04-28 東京エレクトロン株式会社 処理装置
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JPH04287316A (ja) * 1991-03-16 1992-10-12 Fujitsu Ltd 半導体製造装置及びその製造方法
JPH0599190A (ja) * 1991-10-08 1993-04-20 Mitsubishi Electric Corp 半導体製造装置
JPH0786173A (ja) * 1993-09-16 1995-03-31 Tokyo Electron Ltd 成膜方法
US6002109A (en) * 1995-07-10 1999-12-14 Mattson Technology, Inc. System and method for thermal processing of a semiconductor substrate
JP3151597B2 (ja) * 1995-09-19 2001-04-03 東京エレクトロン株式会社 縦型熱処理装置
KR970077159A (ko) * 1996-05-08 1997-12-12 문정환 반도체 저압화학기상증착장치
US6086362A (en) * 1998-05-20 2000-07-11 Applied Komatsu Technology, Inc. Multi-function chamber for a substrate processing system
JP3578258B2 (ja) * 1998-08-10 2004-10-20 東京エレクトロン株式会社 熱処理装置
JP3396431B2 (ja) * 1998-08-10 2003-04-14 東京エレクトロン株式会社 酸化処理方法および酸化処理装置
JP4015791B2 (ja) * 1998-11-26 2007-11-28 東京エレクトロン株式会社 熱処理装置
TW430866B (en) * 1998-11-26 2001-04-21 Tokyo Electron Ltd Thermal treatment apparatus
US6605352B1 (en) * 2000-01-06 2003-08-12 Saint-Gobain Ceramics & Plastics, Inc. Corrosion and erosion resistant thin film diamond coating and applications therefor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109830573A (zh) * 2019-03-22 2019-05-31 南京林业大学 一种改进的用于太阳电池硅片处理的槽式臭氧处理系统

Also Published As

Publication number Publication date
WO2002093621A1 (fr) 2002-11-21
EP1393351B1 (de) 2011-11-02
HK1067786A1 (en) 2005-04-15
KR100926994B1 (ko) 2009-11-17
KR20040007560A (ko) 2004-01-24
JP2005526370A (ja) 2005-09-02
FR2824663B1 (fr) 2004-10-01
JP4996035B2 (ja) 2012-08-08
US20040175956A1 (en) 2004-09-09
US7524745B2 (en) 2009-04-28
DE02730404T1 (de) 2007-11-15
EP1393351A1 (de) 2004-03-03
KR20090086624A (ko) 2009-08-13
FR2824663A1 (fr) 2002-11-15
CN1528007A (zh) 2004-09-08
CN1275290C (zh) 2006-09-13

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