ATE53073T1 - Verfahren und vorrichtung zur bildung eines duennen films durch abscheidung aus der gasphase auf mehreren substratflaechen. - Google Patents

Verfahren und vorrichtung zur bildung eines duennen films durch abscheidung aus der gasphase auf mehreren substratflaechen.

Info

Publication number
ATE53073T1
ATE53073T1 AT86402040T AT86402040T ATE53073T1 AT E53073 T1 ATE53073 T1 AT E53073T1 AT 86402040 T AT86402040 T AT 86402040T AT 86402040 T AT86402040 T AT 86402040T AT E53073 T1 ATE53073 T1 AT E53073T1
Authority
AT
Austria
Prior art keywords
wall
substrates
reactive
deposition
treatment
Prior art date
Application number
AT86402040T
Other languages
English (en)
Inventor
Lionel Gerard Vandenbulcke
Original Assignee
Centre Nat Rech Scient
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Centre Nat Rech Scient filed Critical Centre Nat Rech Scient
Application granted granted Critical
Publication of ATE53073T1 publication Critical patent/ATE53073T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
AT86402040T 1985-09-23 1986-09-17 Verfahren und vorrichtung zur bildung eines duennen films durch abscheidung aus der gasphase auf mehreren substratflaechen. ATE53073T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8514074A FR2587731B1 (fr) 1985-09-23 1985-09-23 Procede et dispositif de depot chimique de couches minces uniformes sur de nombreux substrats plans a partir d'une phase gazeuse
EP86402040A EP0223629B1 (de) 1985-09-23 1986-09-17 Verfahren und Vorrichtung zur Bildung eines dünnen Films durch Abscheidung aus der Gasphase auf mehreren Substratflächen

Publications (1)

Publication Number Publication Date
ATE53073T1 true ATE53073T1 (de) 1990-06-15

Family

ID=9323154

Family Applications (1)

Application Number Title Priority Date Filing Date
AT86402040T ATE53073T1 (de) 1985-09-23 1986-09-17 Verfahren und vorrichtung zur bildung eines duennen films durch abscheidung aus der gasphase auf mehreren substratflaechen.

Country Status (4)

Country Link
EP (1) EP0223629B1 (de)
AT (1) ATE53073T1 (de)
DE (1) DE3671483D1 (de)
FR (1) FR2587731B1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63144513A (ja) * 1986-12-09 1988-06-16 Nkk Corp バレル型エピタキシヤル成長装置
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
DE3889446T2 (de) * 1988-02-29 1994-11-17 Nippon Kokan Kk Vorrichtung zur Herstellung von dünnen Filmen.
JP3129236B2 (ja) * 1996-07-15 2001-01-29 住友電気工業株式会社 円筒形容器内流体の対流抑制方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB768733A (en) * 1954-10-19 1957-02-20 Ohio Commw Eng Co Improvements in and relating to plating by the decomposition of gaseous metal-bearing compounds
US3384049A (en) * 1966-10-27 1968-05-21 Emil R. Capita Vapor deposition apparatus including centrifugal force substrate-holding means
DE2220807A1 (de) * 1971-04-30 1972-11-16 Texas Instruments Inc Verfahren und Vorrichtung zum Abscheiden von polykristallinen Duennfilmen aus Silicium und Siliciumdioxid auf Halbleitersubstraten
JPS5242075A (en) * 1975-09-29 1977-04-01 Nippon Denso Co Ltd Device for controlling gas atmosphere in semiconductor producing equip ment
FR2446327A1 (fr) * 1979-01-09 1980-08-08 Fours Indls Cie Procede de traitement thermochimique de la paroi interne de corps ouverts a deux bouts par bombardement ionique, et dispositif pour la mise en oeuvre
JPS59107071A (ja) * 1982-12-12 1984-06-21 Nitto Kohki Co Ltd 被処理物の外表面にスパッタリング膜を形成する装置
US4496828A (en) * 1983-07-08 1985-01-29 Ultra Carbon Corporation Susceptor assembly

Also Published As

Publication number Publication date
FR2587731A1 (fr) 1987-03-27
EP0223629B1 (de) 1990-05-23
EP0223629A1 (de) 1987-05-27
FR2587731B1 (fr) 1988-01-08
DE3671483D1 (de) 1990-06-28

Similar Documents

Publication Publication Date Title
EP0095275A3 (en) Photo-assisted cvd
GB2141444A (en) Chemical vapor deposition of titanium nitride and like films
ATE7931T1 (de) Vorrichtung zur plasmachemischen beschichtung.
FR2713666B1 (fr) Procédé et dispositif de dépôt à basse température d'un film contenant du silicium sur un substrat métallique.
DE3672427D1 (de) Verfahren und vorrichtung zur abscheidung eines duennen filmes.
ZA772109B (en) Process of forming a metal or metal compound coating on a face of a glass substrate and apparatus suitable for use in forming such coating
JPS5177589A (de)
ATE113757T1 (de) Verfahren und vorrichtung zum entfernen von schichten von substraten.
DE69522539D1 (de) Vorrichtung zur chemischen Dampfabscheidung bei niedrigem Druck
ATE53073T1 (de) Verfahren und vorrichtung zur bildung eines duennen films durch abscheidung aus der gasphase auf mehreren substratflaechen.
ES2009963A6 (es) Un aparato para depositar una pelicula sobre una superficie de un sustrato, y procedimiento correspondiente.
FR2306750A1 (fr) Procede pour revetir la surface de divers substrats d'un revetement contenant un polymere qui n'est pas filmogene a la temperature ambiante
ATE73869T1 (de) Verfahren und vorrichtung zum selektiven chemischen aufdampfen.
GB1034095A (en) Method for forming thin oxide films
ES466902A1 (es) Un metodo para formar una pelicula de fosforo-nitrogeno-oxi-geno.
JPS5351187A (en) Gas phase chemical evaporation apparatus
ATE174637T1 (de) Verfahren und vorrichtung zur beschichtung eines substrats mittels kathodenzerstäubung
JPS5518077A (en) Device for growing film under gas
JPS55154730A (en) Method of diffusing b into si wafer
GB1451643A (de)
DE3268439D1 (en) Thin films of compounds and alloy compounds of group iii and group v elements
JPS6453421A (en) Resist coating device
Nishitani et al. Method for Selective Deposition of Metal Thin Film
GB966664A (en) Coating process
JPH0310706B2 (de)

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties