ATE528798T1 - Antriebsverfahren für nanoabstandsschaltelement und mit dem nanoabstandsschaltelement ausgestattete speichervorrichtung - Google Patents

Antriebsverfahren für nanoabstandsschaltelement und mit dem nanoabstandsschaltelement ausgestattete speichervorrichtung

Info

Publication number
ATE528798T1
ATE528798T1 AT08022173T AT08022173T ATE528798T1 AT E528798 T1 ATE528798 T1 AT E528798T1 AT 08022173 T AT08022173 T AT 08022173T AT 08022173 T AT08022173 T AT 08022173T AT E528798 T1 ATE528798 T1 AT E528798T1
Authority
AT
Austria
Prior art keywords
switching element
nano
resistance state
distance switching
voltage
Prior art date
Application number
AT08022173T
Other languages
English (en)
Inventor
Yuichiro Masuda
Shigeo Furuta
Tsuyoshi Takahashi
Tetsuo Shimizu
Yasuhisa Naitoh
Masayo Horikawa
Original Assignee
Funai Eaa Tech Res Inst Inc
Nat Inst Of Advanced Ind Scien
Funai Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Funai Eaa Tech Res Inst Inc, Nat Inst Of Advanced Ind Scien, Funai Electric Co filed Critical Funai Eaa Tech Res Inst Inc
Application granted granted Critical
Publication of ATE528798T1 publication Critical patent/ATE528798T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0021—Auxiliary circuits
    • G11C13/0069—Writing or programming circuits or methods
    • G11C2013/009—Write using potential difference applied between cell electrodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/708—Integrated with dissimilar structures on a common substrate with distinct switching device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/701—Integrated with dissimilar structures on a common substrate
    • Y10S977/723—On an electrically insulating substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/94—Specified use of nanostructure for electronic or optoelectronic application in a logic circuit
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/943—Information storage or retrieval using nanostructure

Landscapes

  • Semiconductor Memories (AREA)
AT08022173T 2007-12-20 2008-12-19 Antriebsverfahren für nanoabstandsschaltelement und mit dem nanoabstandsschaltelement ausgestattete speichervorrichtung ATE528798T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007328393A JP5312782B2 (ja) 2007-12-20 2007-12-20 ナノギャップスイッチング素子の駆動方法及びナノギャップスイッチング素子を備える記憶装置

Publications (1)

Publication Number Publication Date
ATE528798T1 true ATE528798T1 (de) 2011-10-15

Family

ID=40419166

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08022173T ATE528798T1 (de) 2007-12-20 2008-12-19 Antriebsverfahren für nanoabstandsschaltelement und mit dem nanoabstandsschaltelement ausgestattete speichervorrichtung

Country Status (4)

Country Link
US (1) US7990751B2 (de)
EP (1) EP2073266B1 (de)
JP (1) JP5312782B2 (de)
AT (1) ATE528798T1 (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4919146B2 (ja) * 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
JP5527729B2 (ja) * 2010-08-26 2014-06-25 独立行政法人産業技術総合研究所 メモリ素子の駆動方法及びメモリ素子を備える記憶装置
JP5499364B2 (ja) * 2010-08-26 2014-05-21 独立行政法人産業技術総合研究所 メモリ素子の駆動方法及びメモリ素子を備える記憶装置
WO2012112769A1 (en) * 2011-02-16 2012-08-23 William Marsh Rice University Invisible/transparent nonvolatile memory
US9324422B2 (en) * 2011-04-18 2016-04-26 The Board Of Trustees Of The University Of Illinois Adaptive resistive device and methods thereof
US9412442B2 (en) 2012-04-27 2016-08-09 The Board Of Trustees Of The University Of Illinois Methods for forming a nanowire and apparatus thereof
US10396175B2 (en) 2014-11-25 2019-08-27 University Of Kentucky Research Foundation Nanogaps on atomically thin materials as non-volatile read/writable memory devices

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3504562B2 (ja) 1995-09-20 2004-03-08 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
JP3988696B2 (ja) 2003-03-27 2007-10-10 ソニー株式会社 データ読出方法及び半導体記憶装置
JP3864229B2 (ja) 2003-08-29 2006-12-27 独立行政法人産業技術総合研究所 ナノギャップ電極の製造方法及び該方法により製造されたナノギャップ電極を有する素子
KR100835275B1 (ko) 2004-08-12 2008-06-05 삼성전자주식회사 스핀 주입 메카니즘을 사용하여 자기램 소자를 구동시키는방법들
WO2006102292A2 (en) 2005-03-21 2006-09-28 The Trustees Of The University Of Pennsylvania Nanogaps: methods and devices containing same
JP4919146B2 (ja) * 2005-09-27 2012-04-18 独立行政法人産業技術総合研究所 スイッチング素子
JP4446054B2 (ja) * 2007-03-23 2010-04-07 独立行政法人産業技術総合研究所 不揮発性記憶素子
JP2008311449A (ja) * 2007-06-15 2008-12-25 National Institute Of Advanced Industrial & Technology シリコンによる２端子抵抗スイッチ素子及び半導体デバイス
JP5120874B2 (ja) * 2007-06-22 2013-01-16 株式会社船井電機新応用技術研究所 スイッチング素子

Also Published As

Publication number Publication date
US20090161407A1 (en) 2009-06-25
US7990751B2 (en) 2011-08-02
EP2073266B1 (de) 2011-10-12
EP2073266A1 (de) 2009-06-24
JP5312782B2 (ja) 2013-10-09
JP2009152351A (ja) 2009-07-09

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Legal Events

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RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties