ATE526691T1 - Elektronische vorrichtungen - Google Patents

Elektronische vorrichtungen

Info

Publication number
ATE526691T1
ATE526691T1 AT06743881T AT06743881T ATE526691T1 AT E526691 T1 ATE526691 T1 AT E526691T1 AT 06743881 T AT06743881 T AT 06743881T AT 06743881 T AT06743881 T AT 06743881T AT E526691 T1 ATE526691 T1 AT E526691T1
Authority
AT
Austria
Prior art keywords
substrate
areas
charge carriers
insulative features
mobile charge
Prior art date
Application number
AT06743881T
Other languages
English (en)
Inventor
Aimin Song
Original Assignee
Pragmatic Printing Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB0509411A external-priority patent/GB0509411D0/en
Priority claimed from GB0509410A external-priority patent/GB0509410D0/en
Application filed by Pragmatic Printing Ltd filed Critical Pragmatic Printing Ltd
Application granted granted Critical
Publication of ATE526691T1 publication Critical patent/ATE526691T1/de

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having 2D charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/383—Quantum effect devices, e.g. of devices using quantum reflection, diffraction or interference effects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/125—Shapes of junctions between the regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electroluminescent Light Sources (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
AT06743881T 2005-05-09 2006-05-09 Elektronische vorrichtungen ATE526691T1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
GB0509411A GB0509411D0 (en) 2005-05-09 2005-05-09 Nondestructive photolithography of conducting polymer structures
GB0509410A GB0509410D0 (en) 2005-05-09 2005-05-09 Low-mobility electronics devices
PCT/GB2006/001667 WO2006120414A2 (en) 2005-05-09 2006-05-09 Electronic devices

Publications (1)

Publication Number Publication Date
ATE526691T1 true ATE526691T1 (de) 2011-10-15

Family

ID=36847854

Family Applications (1)

Application Number Title Priority Date Filing Date
AT06743881T ATE526691T1 (de) 2005-05-09 2006-05-09 Elektronische vorrichtungen

Country Status (6)

Country Link
US (2) US8624216B2 (de)
EP (2) EP2264803B1 (de)
JP (2) JP2008544477A (de)
KR (2) KR101317695B1 (de)
AT (1) ATE526691T1 (de)
WO (1) WO2006120414A2 (de)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007058369A1 (de) 2007-12-03 2009-06-04 Voith Patent Gmbh Gewebeband für eine Maschine zur Herstellung von Bahnmaterial, insbesondere Papier oder Karton
JP2008235429A (ja) * 2007-03-19 2008-10-02 Ricoh Co Ltd 機能性有機薄膜とその製造方法
JP5176414B2 (ja) * 2007-07-11 2013-04-03 株式会社リコー 有機トランジスタアレイ及び表示装置
WO2009031525A1 (ja) * 2007-09-07 2009-03-12 Nec Corporation カーボンナノチューブ構造物及び薄膜トランジスタ
GB2467316B (en) 2009-01-28 2014-04-09 Pragmatic Printing Ltd Electronic devices, circuits and their manufacture
GB2462693B (en) * 2008-07-31 2013-06-19 Pragmatic Printing Ltd Forming electrically insulative regions
GB2473200B (en) 2009-09-02 2014-03-05 Pragmatic Printing Ltd Structures comprising planar electronic devices
GB2475561A (en) 2009-11-24 2011-05-25 Nano Eprint Ltd Planar electronic devices
US20120305892A1 (en) * 2010-12-08 2012-12-06 Martin Thornton Electronic device, method of manufacturing a device and apparatus for manufacturing a device
US8637186B2 (en) * 2011-08-24 2014-01-28 Gwangju Institute Of Science And Technology Electrode for battery and method for manufacturing thereof
FR2980913B1 (fr) * 2011-09-30 2014-04-18 Commissariat Energie Atomique Procede de structuration d'une couche active organique deposee sur un substrat
GB2532895B (en) 2012-02-21 2016-07-13 Pragmatic Printing Ltd Substantially planar electronic devices and circuits
CN103346406B (zh) * 2013-05-20 2015-04-29 电子科技大学 基于高电子迁移率晶体管太赫兹波空间外部调制器
US9305807B2 (en) * 2014-02-27 2016-04-05 Palo Alto Research Center Incorporated Fabrication method for microelectronic components and microchip inks used in electrostatic assembly
US9922810B2 (en) 2014-05-01 2018-03-20 Perkinelmer Health Sciences, Inc. Systems and methods for detection and quantification of selenium and silicon in samples
US10724153B2 (en) * 2014-06-11 2020-07-28 Georgia Tech Research Corporation Polymer-based nanostructured materials with tunable properties and methods of making thereof
JP6309882B2 (ja) * 2014-11-21 2018-04-11 日本電信電話株式会社 インプレーンダブルゲートトランジスタ
FR3030886B1 (fr) * 2014-12-22 2017-03-10 Centre Nat Rech Scient Dispositif de modulation comportant une nano-diode
CN108598258B (zh) * 2018-04-27 2021-11-09 华南师范大学 一种具有静态负微分电阻特性的太赫兹器件
CN114447225B (zh) * 2022-01-14 2025-12-16 苏州大学 一种有机小分子单晶的制备方法及有机场效应晶体管
KR20240128794A (ko) * 2023-02-17 2024-08-27 트레데가르 서피스 프로텍션, 엘엘씨 마스킹 필름의 제조 방법 및 그에 의해 제조된 마스킹 필름

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5385865A (en) 1990-04-26 1995-01-31 Max-Planck-Gesellschaft Zur Forderung Der Wissenschaften Method of generating active semiconductor structures by means of starting structures which have a 2D charge carrier layer parallel to the surface
JPH0430345U (de) 1990-07-05 1992-03-11
US5821563A (en) * 1990-12-25 1998-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device free from reverse leakage and throw leakage
JP3246189B2 (ja) * 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
KR19990075338A (ko) * 1998-03-19 1999-10-15 윤종용 수도모픽 고 전자 이동도 트랜지스터의 t-게이트 제조 방법
GB9914489D0 (en) * 1999-06-21 1999-08-25 Univ Cambridge Tech Transistors
US6500604B1 (en) * 2000-01-03 2002-12-31 International Business Machines Corporation Method for patterning sensitive organic thin films
JP2002215065A (ja) * 2000-11-02 2002-07-31 Seiko Epson Corp 有機エレクトロルミネッセンス装置及びその製造方法、並びに電子機器
GB0109782D0 (en) * 2001-04-20 2001-06-13 Btg Int Ltd Nanoelectronic devices and circuits
US20040005258A1 (en) 2001-12-12 2004-01-08 Fonash Stephen J. Chemical reactor templates: sacrificial layer fabrication and template use
JP4044362B2 (ja) 2002-04-24 2008-02-06 大日本印刷株式会社 有機ｅｌ素子の製造方法
US6661024B1 (en) * 2002-07-02 2003-12-09 Motorola, Inc. Integrated circuit including field effect transistor and method of manufacture
JP4429584B2 (ja) * 2002-11-07 2010-03-10 旭化成株式会社 縦型の電界効果トランジスタ
US6872588B2 (en) * 2002-11-22 2005-03-29 Palo Alto Research Center Inc. Method of fabrication of electronic devices using microfluidic channels
US7759719B2 (en) * 2004-07-01 2010-07-20 Chih-Hsin Wang Electrically alterable memory cell
GB0315477D0 (en) * 2003-07-02 2003-08-06 Plastic Logic Ltd Rectifying diodes
JP4997688B2 (ja) * 2003-08-19 2012-08-08 セイコーエプソン株式会社 電極、薄膜トランジスタ、電子回路、表示装置および電子機器
JP2005079225A (ja) * 2003-08-29 2005-03-24 Institute Of Physical & Chemical Research 有機材料パターンの形成方法及び薄膜トランジスタの製造方法
GB0415995D0 (en) 2004-07-16 2004-08-18 Song Aimin Memory array
CN100558940C (zh) * 2004-08-18 2009-11-11 陶氏康宁公司 涂布的基片及其制备方法
US20090108992A1 (en) * 2004-11-19 2009-04-30 Senomatic Electronics Corporation Technique And Hardware For Communicating With Backscatter Radio Frequency Identification Readers
US7858451B2 (en) * 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
CN101176139A (zh) * 2005-08-23 2008-05-07 富士通日立等离子显示器股份有限公司 等离子体显示装置

Also Published As

Publication number Publication date
EP2264803A2 (de) 2010-12-22
US20140110668A1 (en) 2014-04-24
US8624216B2 (en) 2014-01-07
WO2006120414A2 (en) 2006-11-16
KR101381405B1 (ko) 2014-04-02
EP1880430A2 (de) 2008-01-23
WO2006120414A3 (en) 2007-05-03
US9076851B2 (en) 2015-07-07
US20090315017A1 (en) 2009-12-24
KR101317695B1 (ko) 2013-10-15
EP2264803A3 (de) 2014-02-26
EP2264803B1 (de) 2019-01-30
JP2008544477A (ja) 2008-12-04
KR20080031674A (ko) 2008-04-10
JP2013034028A (ja) 2013-02-14
EP1880430B1 (de) 2011-09-28
KR20130036366A (ko) 2013-04-11

Similar Documents

Publication Publication Date Title
ATE526691T1 (de) Elektronische vorrichtungen
TW200511365A (en) Electronic device including a self-assembled monolayer, and a method of fabricating the same
EP1683187A4 (de) Verspannte halbleiter-einrichtungsstrukturen mit granularem halbleitermaterial
TW200715566A (en) Display device and method of manufacturing the same
WO2003030278A3 (en) Composition, method and electronic device
TW200707737A (en) Field effect transistor, biosensor provided with it, and detecting method
TW200625465A (en) High mobility tri-gate devices and methods of fabrication
EP1367659A3 (de) Organischer Feldeffekt-Transistor
WO2004059706A3 (en) Electronic devices including semiconductor mesa structures and conductivity junctions and methods of forming said devices
DE60235679D1 (de) Konjugierte Copolymere aus Dithienothiophen und Vinylen oder Acetylen
EP1850124A3 (de) Feldeffekttransistor zur Detektion von ionischem Material und Verfahren zur Detektion von ionischem Material unter Verwendung desselben
WO2008120418A1 (ja) 半導体装置およびその製造方法
EP2293338A3 (de) Doppel-gate-transistor mit erhöhter Ladungsträger-beweglichkeit
WO2005086237A3 (en) Ldmos transistor and method of making the same
WO2005045947A3 (en) Segmented organic light emitting device
TW200509390A (en) Varying carrier mobility in semiconductor devices to achieve overall design goals
TW200711148A (en) Stressed field effect transistors on hybrid orientation substrate
WO2003100865A3 (en) Microwave field effect transistor structure
WO2004003972A3 (en) Transistor and sensors made from molecular materials with electric dipoles
ATE370926T1 (de) Bis(2-acenyl)acetylen- halbleiter
Reddy et al. Performance analysis of Z‐shaped gate dielectric modulated (DM) tunnel field‐effect transistor‐(TFET) based biosensor with extended horizontal N+ pocket
TW200710409A (en) Method and structures for measuring gate tunneling leakage parameters of field effect transistors
ATE359545T1 (de) Elektronische vorrichtung
WO2003003452A3 (en) Field-effect transistor and method of making the same
EP1284496A4 (de) Übergangsfeldeffekttransistor und seine herstellungsmethode

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties