ATE521067T1 - Sram mit elastischer spannungsversorgung für lese-und schreiboperationen - Google Patents

Sram mit elastischer spannungsversorgung für lese-und schreiboperationen

Info

Publication number
ATE521067T1
ATE521067T1 AT08728583T AT08728583T ATE521067T1 AT E521067 T1 ATE521067 T1 AT E521067T1 AT 08728583 T AT08728583 T AT 08728583T AT 08728583 T AT08728583 T AT 08728583T AT E521067 T1 ATE521067 T1 AT E521067T1
Authority
AT
Austria
Prior art keywords
sram cell
sram
write operations
voltage
read
Prior art date
Application number
AT08728583T
Other languages
English (en)
Inventor
Yolin Lih
Ajay Bhatia
Dennis Wendell
Jun Liu
Daniel Fung
Shyam Balasubramanian
Original Assignee
Montalvo Systems Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Montalvo Systems Inc filed Critical Montalvo Systems Inc
Application granted granted Critical
Publication of ATE521067T1 publication Critical patent/ATE521067T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G11C11/419—Read-write [R-W] circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
    • G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Semiconductor Memories (AREA)
  • Electrophonic Musical Instruments (AREA)
  • Synchronisation In Digital Transmission Systems (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Electronic Switches (AREA)
  • Keying Circuit Devices (AREA)
AT08728583T 2007-02-02 2008-01-30 Sram mit elastischer spannungsversorgung für lese-und schreiboperationen ATE521067T1 (de)

Applications Claiming Priority (6)

Application Number Priority Date Filing Date Title
US88800607P 2007-02-02 2007-02-02
US11/932,643 US20080266995A1 (en) 2007-02-02 2007-10-31 Method of selectively powering memory device
US11/932,555 US7952910B2 (en) 2007-02-02 2007-10-31 Memory device with split power switch
US11/932,967 US7672187B2 (en) 2007-02-02 2007-10-31 Elastic power for read and write margins
US11/938,196 US7869263B2 (en) 2007-02-02 2007-11-09 Elastic power for read margin
PCT/US2008/052496 WO2008097783A2 (en) 2007-02-02 2008-01-30 Elastic power for read and write margins

Publications (1)

Publication Number Publication Date
ATE521067T1 true ATE521067T1 (de) 2011-09-15

Family

ID=39676026

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08728583T ATE521067T1 (de) 2007-02-02 2008-01-30 Sram mit elastischer spannungsversorgung für lese-und schreiboperationen

Country Status (5)

Country Link
US (4) US7952910B2 (de)
EP (2) EP2118900B1 (de)
AT (1) ATE521067T1 (de)
TW (2) TWI389130B (de)
WO (2) WO2008097783A2 (de)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007193928A (ja) * 2005-12-19 2007-08-02 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7570537B2 (en) * 2007-07-12 2009-08-04 Sun Microsystems, Inc. Memory cells with power switch circuit for improved low voltage operation
TWI399748B (zh) * 2009-01-15 2013-06-21 Univ Hsiuping Sci & Tech 寫入操作時降低電源電壓之雙埠靜態隨機存取記憶體
KR101034616B1 (ko) * 2009-11-30 2011-05-12 주식회사 하이닉스반도체 센스앰프 및 반도체 메모리장치
US8320203B2 (en) * 2010-03-26 2012-11-27 Intel Corporation Method and system to lower the minimum operating voltage of register files
JP2012038401A (ja) 2010-08-11 2012-02-23 Elpida Memory Inc 半導体装置及び半導体装置の電源制御方法
US8427896B1 (en) 2011-11-15 2013-04-23 International Business Machines Corporation Dynamic wordline assist scheme to improve performance tradeoff in SRAM
US8729908B2 (en) 2012-02-29 2014-05-20 International Business Machines Corporation Static noise margin monitoring circuit and method
TWI494945B (zh) * 2012-03-29 2015-08-01 Nat Univ Chung Cheng Single-ended read random access memory device
US9317087B2 (en) * 2012-04-26 2016-04-19 Ravindraraj Ramaraju Memory column drowsy control
US9019751B2 (en) * 2013-03-01 2015-04-28 Qualcomm Incorporated Process tolerant circuits
US9627038B2 (en) * 2013-03-15 2017-04-18 Intel Corporation Multiport memory cell having improved density area
US9105355B2 (en) * 2013-07-04 2015-08-11 United Microelectronics Corporation Memory cell array operated with multiple operation voltage
TWI562163B (en) * 2013-07-04 2016-12-11 United Microelectronics Corp Memory cell array
TWI528361B (zh) * 2013-12-10 2016-04-01 智原科技股份有限公司 靜態記憶胞
US9595307B2 (en) 2014-05-22 2017-03-14 Samsung Electronics Co., Ltd. Volatile memory device and system-on-chip including the same
US9570155B2 (en) 2015-06-09 2017-02-14 Globalfoundries Inc. Circuit to improve SRAM stability
US10049724B2 (en) 2016-06-07 2018-08-14 Intel Corporation Aging tolerant register file
US9922701B2 (en) * 2016-08-08 2018-03-20 Taiwan Semiconductor Manufacturing Company Limited Pre-charging bit lines through charge-sharing
US10236036B2 (en) * 2017-05-09 2019-03-19 Micron Technology, Inc. Sense amplifier signal boost
US11133039B2 (en) * 2018-10-12 2021-09-28 Taiwan Semiconductor Manufacturing Company, Ltd. Power switch control in a memory device
US11967365B2 (en) * 2019-06-11 2024-04-23 Arm Limited Bitcell architecture with time-multiplexed ports

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4686391A (en) * 1986-05-08 1987-08-11 Genrad, Inc. Fast-acting comparison circuit
JPH07111824B2 (ja) * 1986-12-15 1995-11-29 株式会社東芝 半導体メモリ
KR0136074B1 (ko) * 1992-09-11 1998-06-01 세키자와 스토무 개량된 소프트 에러 저항을 갖는 mos형 sram, 고전위 전원 전압 강하 검출 회로, 상보 신호 천이 검출 회로 및 개량된 내부신호 시간 마진을 갖는 반도체 장치
US5870331A (en) * 1997-09-26 1999-02-09 Advanced Micro Devices, Inc. Application-specific SRAM memory cell for low voltage, high speed operation
JP3183245B2 (ja) * 1998-03-06 2001-07-09 日本電気株式会社 半導体記憶装置
US6117722A (en) * 1999-02-18 2000-09-12 Taiwan Semiconductor Manufacturing Company SRAM layout for relaxing mechanical stress in shallow trench isolation technology and method of manufacture thereof
KR100346832B1 (ko) * 2000-01-12 2002-08-03 삼성전자 주식회사 스태틱 랜덤 억세스 메모리 소자 및 그 제조 방법
US6801994B2 (en) * 2000-12-20 2004-10-05 Microsoft Corporation Software management systems and methods for automotive computing devices
JP2003045187A (ja) * 2001-08-02 2003-02-14 Mitsubishi Electric Corp 半導体記憶装置
JP4030383B2 (ja) * 2002-08-26 2008-01-09 株式会社ルネサステクノロジ 半導体装置およびその製造方法
US6771095B1 (en) * 2002-11-22 2004-08-03 Analog Devices, Inc. Level translating digital switch
JP3906166B2 (ja) * 2003-02-25 2007-04-18 株式会社東芝 半導体記憶装置
JP2004362695A (ja) * 2003-06-05 2004-12-24 Renesas Technology Corp 半導体記憶装置
US7165165B2 (en) * 2004-03-16 2007-01-16 Intel Corporation Anticipatory power control of memory
US7129765B2 (en) * 2004-04-30 2006-10-31 Xilinx, Inc. Differential clock tree in an integrated circuit
US7092280B2 (en) * 2004-11-22 2006-08-15 International Business Machines Corp. SRAM with dynamically asymmetric cell
JP4912016B2 (ja) * 2005-05-23 2012-04-04 ルネサスエレクトロニクス株式会社 半導体記憶装置
US7403426B2 (en) * 2005-05-25 2008-07-22 Intel Corporation Memory with dynamically adjustable supply
US7060549B1 (en) 2005-07-01 2006-06-13 Advanced Micro Devices, Inc. SRAM devices utilizing tensile-stressed strain films and methods for fabricating the same
JP5100035B2 (ja) * 2005-08-02 2012-12-19 ルネサスエレクトロニクス株式会社 半導体記憶装置
JP4929668B2 (ja) * 2005-10-12 2012-05-09 富士通セミコンダクター株式会社 半導体メモリ
US7376001B2 (en) * 2005-10-13 2008-05-20 International Business Machines Corporation Row circuit ring oscillator method for evaluating memory cell performance
JP2007193928A (ja) * 2005-12-19 2007-08-02 Matsushita Electric Ind Co Ltd 半導体記憶装置

Also Published As

Publication number Publication date
US20080186791A1 (en) 2008-08-07
EP2118717B1 (de) 2013-08-21
TW200849271A (en) 2008-12-16
EP2118900B1 (de) 2011-08-17
WO2008097783A2 (en) 2008-08-14
US7672187B2 (en) 2010-03-02
US7869263B2 (en) 2011-01-11
US20080266995A1 (en) 2008-10-30
EP2118717A1 (de) 2009-11-18
WO2008097783A3 (en) 2008-10-23
US20080273412A1 (en) 2008-11-06
EP2118900A2 (de) 2009-11-18
TWI394173B (zh) 2013-04-21
EP2118900A4 (de) 2010-04-21
US20080186795A1 (en) 2008-08-07
US7952910B2 (en) 2011-05-31
TWI389130B (zh) 2013-03-11
WO2008097782A1 (en) 2008-08-14
TW200847178A (en) 2008-12-01
EP2118717A4 (de) 2010-04-07

Similar Documents

Publication Publication Date Title
ATE521067T1 (de) Sram mit elastischer spannungsversorgung für lese-und schreiboperationen
US11610628B2 (en) Static random access memory
JP6830681B2 (ja) 電子回路
JP2007234126A5 (de)
HK1161415A1 (en) Sram with different supply voltages for memory cells and access logic circuitry
CN107886986B (zh) 一种解决半选问题的亚阈值sram存储单元电路
US9685224B2 (en) Memory with bit line control
KR970023375A (ko) 데이터 유지회로
WO2011133763A3 (en) Retain-till-accessed (rta) power saving mode in high performance static memories
WO2015102569A3 (en) Static random access memory cell having improved write margin for use in ultra-low power application
JP2009289308A (ja) 半導体記憶装置
US9317087B2 (en) Memory column drowsy control
US9165642B2 (en) Low voltage dual supply memory cell with two word lines and activation circuitry
Giterman et al. 4T gain-cell with internal-feedback for ultra-low retention power at scaled CMOS nodes
JP5408455B2 (ja) 半導体記憶装置
JP2016157504A5 (de)
KR101258346B1 (ko) 조정 접지 노드들을 구비한 메모리
CN102290097A (zh) 一种sram存储器
US8462540B2 (en) Static random access memory cell
US8369175B1 (en) Memory elements with voltage overstress protection
US8018756B2 (en) Semiconductor memory device
CN108269599B (zh) 一种平衡位线漏电流的静态存储单元
Surekha et al. Stability analysis of 7T-SRAM cell
KR101046403B1 (ko) 에스램 회로
Vaknin et al. A Double-Feedback 8T SRAM bitcell for low-voltage low-leakage operation

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties