ATE520153T1 - Elektrisch abstimmbares bauelement und diesbezügliches verfahren - Google Patents

Elektrisch abstimmbares bauelement und diesbezügliches verfahren

Info

Publication number
ATE520153T1
ATE520153T1 AT01941368T AT01941368T ATE520153T1 AT E520153 T1 ATE520153 T1 AT E520153T1 AT 01941368 T AT01941368 T AT 01941368T AT 01941368 T AT01941368 T AT 01941368T AT E520153 T1 ATE520153 T1 AT E520153T1
Authority
AT
Austria
Prior art keywords
ferroelectric
layer
related method
electrically tunable
tunable component
Prior art date
Application number
AT01941368T
Other languages
English (en)
Inventor
Spartak Gevorgian
Zdravko Ivanov
Peter Chalmers Petrov
Erland Wikborg
Original Assignee
Ericsson Telefon Ab L M
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ericsson Telefon Ab L M filed Critical Ericsson Telefon Ab L M
Application granted granted Critical
Publication of ATE520153T1 publication Critical patent/ATE520153T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/64—Variable-capacitance diodes, e.g. varactors 

Landscapes

  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)
  • Inorganic Insulating Materials (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Electrotherapy Devices (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
AT01941368T 2000-06-20 2001-06-12 Elektrisch abstimmbares bauelement und diesbezügliches verfahren ATE520153T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
SE0002296A SE517440C2 (sv) 2000-06-20 2000-06-20 Elektriskt avstämbar anordning och ett förfarande relaterande därtill
PCT/SE2001/001321 WO2001099200A1 (en) 2000-06-20 2001-06-12 Electrically tunable device and a method relating thereto

Publications (1)

Publication Number Publication Date
ATE520153T1 true ATE520153T1 (de) 2011-08-15

Family

ID=20280153

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01941368T ATE520153T1 (de) 2000-06-20 2001-06-12 Elektrisch abstimmbares bauelement und diesbezügliches verfahren

Country Status (7)

Country Link
US (1) US6563153B2 (de)
EP (1) EP1307924B1 (de)
AT (1) ATE520153T1 (de)
AU (1) AU2001274727A1 (de)
SE (1) SE517440C2 (de)
TW (1) TW475272B (de)
WO (1) WO2001099200A1 (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727535B1 (en) * 1998-11-09 2004-04-27 Paratek Microwave, Inc. Ferroelectric varactor with built-in DC blocks
US6617062B2 (en) * 2001-04-13 2003-09-09 Paratek Microwave, Inc. Strain-relieved tunable dielectric thin films
FR2826780A1 (fr) * 2001-06-28 2003-01-03 St Microelectronics Sa Dispositif semi-conducteur a structure hyperfrequence
SE519705C2 (sv) * 2001-08-22 2003-04-01 Ericsson Telefon Ab L M En avstämbar ferroelektrisk resonatoranordning
WO2003026059A1 (en) * 2001-09-20 2003-03-27 Paratek Microwave, Inc. Tunable filters having variable bandwidth and variable delay
US20040195542A1 (en) * 2002-08-08 2004-10-07 Laurent Bellaiche Enhanced electromechanical properties in atomically-ordered ferroelectric alloys
US20060035023A1 (en) * 2003-08-07 2006-02-16 Wontae Chang Method for making a strain-relieved tunable dielectric thin film
DE60327905D1 (de) * 2003-12-30 2009-07-16 Ericsson Telefon Ab L M Abstimmbare mikrowellenanordnungen
US20080165565A1 (en) * 2004-01-12 2008-07-10 Eidgenossische Technische Hochschule Zurich Ferroelectric Thin Films and Devices Comprising Thin Ferroelectric Films
US7053728B2 (en) 2004-03-19 2006-05-30 Avago Technologies General Ip Pte. Ltd. Impedance transformation network, power amplifier and method for efficiently transmitting output signal using a series varactor device
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
US7402853B2 (en) * 2004-09-17 2008-07-22 Massachusetts Institute Of Technology BST integration using thin buffer layer grown directly onto SiO2/Si substrate
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060091495A1 (en) * 2004-10-29 2006-05-04 Palanduz Cengiz A Ceramic thin film on base metal electrode
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US7375412B1 (en) 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
WO2007032452A1 (ja) * 2005-09-14 2007-03-22 Kyocera Corporation 可変共振回路、フィルタ装置、通信装置および可変共振回路の温度特性調整方法
WO2008050271A2 (en) * 2006-10-25 2008-05-02 Nxp B.V. Ferroelectric varactor with improved tuning range
US7532384B2 (en) * 2006-11-15 2009-05-12 Massachusetts Institute Of Technology π-Phase shift device for light
US7869335B2 (en) * 2007-10-09 2011-01-11 Seagate Technology Llc Multiple ferroelectric films
US8310123B2 (en) 2008-07-28 2012-11-13 Direct Drive Systems, Inc. Wrapped rotor sleeve for an electric machine
US20160133758A1 (en) * 2014-05-08 2016-05-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
DE102016102501A1 (de) * 2016-02-12 2017-08-17 Technische Universität Darmstadt Mikroelektronische Elektrodenanordnung
US10892728B2 (en) * 2018-12-20 2021-01-12 Mitsubishi Electric Research Laboratories, Inc. Virtual inductors using ferroelectric capacitance and the fabrication method thereof
WO2025022924A1 (ja) * 2023-07-24 2025-01-30 株式会社村田製作所 可変容量ダイオードおよび可変容量ダイオードの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5270298A (en) * 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
JPH0677402A (ja) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> 半導体デバイス用誘電体構造及びその製造方法
US5472935A (en) 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films
US5977577A (en) * 1994-11-15 1999-11-02 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
US6151240A (en) * 1995-06-01 2000-11-21 Sony Corporation Ferroelectric nonvolatile memory and oxide multi-layered structure
US5640042A (en) 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor
JP3546278B2 (ja) * 1996-04-19 2004-07-21 トヨタ自動車株式会社 内燃機関の動弁装置
JP3103916B2 (ja) 1997-07-09 2000-10-30 ソニー株式会社 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル
JP3482883B2 (ja) * 1998-08-24 2004-01-06 株式会社村田製作所 強誘電体薄膜素子およびその製造方法

Also Published As

Publication number Publication date
EP1307924B1 (de) 2011-08-10
US6563153B2 (en) 2003-05-13
WO2001099200A1 (en) 2001-12-27
EP1307924A1 (de) 2003-05-07
TW475272B (en) 2002-02-01
US20010054748A1 (en) 2001-12-27
AU2001274727A1 (en) 2002-01-02
SE0002296L (sv) 2001-12-21
SE517440C2 (sv) 2002-06-04
SE0002296D0 (sv) 2000-06-20

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