SE517440C2 - Elektriskt avstämbar anordning och ett förfarande relaterande därtill - Google Patents
Elektriskt avstämbar anordning och ett förfarande relaterande därtillInfo
- Publication number
- SE517440C2 SE517440C2 SE0002296A SE0002296A SE517440C2 SE 517440 C2 SE517440 C2 SE 517440C2 SE 0002296 A SE0002296 A SE 0002296A SE 0002296 A SE0002296 A SE 0002296A SE 517440 C2 SE517440 C2 SE 517440C2
- Authority
- SE
- Sweden
- Prior art keywords
- ferroelectric
- layers
- layer
- varactor device
- varactor
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000010409 thin film Substances 0.000 claims abstract description 14
- 239000010408 film Substances 0.000 claims description 32
- 239000000463 material Substances 0.000 claims description 31
- 239000000203 mixture Substances 0.000 claims description 28
- 239000013078 crystal Substances 0.000 claims description 14
- 229910010293 ceramic material Inorganic materials 0.000 claims description 10
- 239000004020 conductor Substances 0.000 claims description 4
- 239000006104 solid solution Substances 0.000 claims description 4
- 239000002086 nanomaterial Substances 0.000 claims description 3
- 238000000608 laser ablation Methods 0.000 claims description 2
- 229910052758 niobium Inorganic materials 0.000 claims description 2
- 229910052712 strontium Inorganic materials 0.000 claims description 2
- 229910052729 chemical element Inorganic materials 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 271
- 229910052454 barium strontium titanate Inorganic materials 0.000 description 8
- 229910052760 oxygen Inorganic materials 0.000 description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 229910052788 barium Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 5
- 229910002113 barium titanate Inorganic materials 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 229910002244 LaAlO3 Inorganic materials 0.000 description 4
- 229910010252 TiO3 Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910002370 SrTiO3 Inorganic materials 0.000 description 3
- 229910009203 Y-Ba-Cu-O Inorganic materials 0.000 description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000005343 Curie-Weiss law Effects 0.000 description 1
- 229910003334 KNbO3 Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 1
- 239000002887 superconductor Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/64—Variable-capacitance diodes, e.g. varactors
Landscapes
- Semiconductor Memories (AREA)
- Thermistors And Varistors (AREA)
- Inorganic Insulating Materials (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Electrotherapy Devices (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0002296A SE517440C2 (sv) | 2000-06-20 | 2000-06-20 | Elektriskt avstämbar anordning och ett förfarande relaterande därtill |
| TW089114262A TW475272B (en) | 2000-06-20 | 2000-07-17 | Electrically tunable device and a method relating thereto |
| AT01941368T ATE520153T1 (de) | 2000-06-20 | 2001-06-12 | Elektrisch abstimmbares bauelement und diesbezügliches verfahren |
| AU2001274727A AU2001274727A1 (en) | 2000-06-20 | 2001-06-12 | Electrically tunable device and a method relating thereto |
| PCT/SE2001/001321 WO2001099200A1 (en) | 2000-06-20 | 2001-06-12 | Electrically tunable device and a method relating thereto |
| EP01941368A EP1307924B1 (de) | 2000-06-20 | 2001-06-12 | Elektrisch abstimmbares bauelement und diesbezügliches verfahren |
| US09/885,520 US6563153B2 (en) | 2000-06-20 | 2001-06-20 | Electrically tunable device and a method relating thereto |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| SE0002296A SE517440C2 (sv) | 2000-06-20 | 2000-06-20 | Elektriskt avstämbar anordning och ett förfarande relaterande därtill |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| SE0002296D0 SE0002296D0 (sv) | 2000-06-20 |
| SE0002296L SE0002296L (sv) | 2001-12-21 |
| SE517440C2 true SE517440C2 (sv) | 2002-06-04 |
Family
ID=20280153
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SE0002296A SE517440C2 (sv) | 2000-06-20 | 2000-06-20 | Elektriskt avstämbar anordning och ett förfarande relaterande därtill |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US6563153B2 (de) |
| EP (1) | EP1307924B1 (de) |
| AT (1) | ATE520153T1 (de) |
| AU (1) | AU2001274727A1 (de) |
| SE (1) | SE517440C2 (de) |
| TW (1) | TW475272B (de) |
| WO (1) | WO2001099200A1 (de) |
Families Citing this family (31)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6727535B1 (en) * | 1998-11-09 | 2004-04-27 | Paratek Microwave, Inc. | Ferroelectric varactor with built-in DC blocks |
| US6617062B2 (en) * | 2001-04-13 | 2003-09-09 | Paratek Microwave, Inc. | Strain-relieved tunable dielectric thin films |
| FR2826780A1 (fr) * | 2001-06-28 | 2003-01-03 | St Microelectronics Sa | Dispositif semi-conducteur a structure hyperfrequence |
| SE519705C2 (sv) * | 2001-08-22 | 2003-04-01 | Ericsson Telefon Ab L M | En avstämbar ferroelektrisk resonatoranordning |
| EP1428289A1 (de) * | 2001-09-20 | 2004-06-16 | Paratek Microwave, Inc. | Abstimmbare filter mit variabler bandbreite und variabler verzögerung |
| US20040195542A1 (en) * | 2002-08-08 | 2004-10-07 | Laurent Bellaiche | Enhanced electromechanical properties in atomically-ordered ferroelectric alloys |
| US20060035023A1 (en) * | 2003-08-07 | 2006-02-16 | Wontae Chang | Method for making a strain-relieved tunable dielectric thin film |
| KR101036051B1 (ko) * | 2003-12-30 | 2011-05-19 | 텔레폰악티에볼라겟엘엠에릭슨(펍) | 동조 가능한 마이크로파 장치 |
| ATE397233T1 (de) * | 2004-01-12 | 2008-06-15 | Eidgenoess Tech Hochschule | Optische bauelemente mit dünnen ferroelektrischen filmen |
| US7053728B2 (en) | 2004-03-19 | 2006-05-30 | Avago Technologies General Ip Pte. Ltd. | Impedance transformation network, power amplifier and method for efficiently transmitting output signal using a series varactor device |
| US20060000542A1 (en) * | 2004-06-30 | 2006-01-05 | Yongki Min | Metal oxide ceramic thin film on base metal electrode |
| WO2006034119A1 (en) * | 2004-09-17 | 2006-03-30 | Massachusetts Institue Of Technology | BST INTEGRATION USING THIN BUFFER LAYER GROWN DIRECTLY ONTO SiO2/Si SUBSTRATE |
| US7290315B2 (en) * | 2004-10-21 | 2007-11-06 | Intel Corporation | Method for making a passive device structure |
| US20060099803A1 (en) * | 2004-10-26 | 2006-05-11 | Yongki Min | Thin film capacitor |
| US20060091495A1 (en) * | 2004-10-29 | 2006-05-04 | Palanduz Cengiz A | Ceramic thin film on base metal electrode |
| US7375412B1 (en) | 2005-03-31 | 2008-05-20 | Intel Corporation | iTFC with optimized C(T) |
| US20060220177A1 (en) * | 2005-03-31 | 2006-10-05 | Palanduz Cengiz A | Reduced porosity high-k thin film mixed grains for thin film capacitor applications |
| US7629269B2 (en) * | 2005-03-31 | 2009-12-08 | Intel Corporation | High-k thin film grain size control |
| US7453144B2 (en) * | 2005-06-29 | 2008-11-18 | Intel Corporation | Thin film capacitors and methods of making the same |
| WO2007032452A1 (ja) * | 2005-09-14 | 2007-03-22 | Kyocera Corporation | 可変共振回路、フィルタ装置、通信装置および可変共振回路の温度特性調整方法 |
| US20100182730A1 (en) * | 2006-10-25 | 2010-07-22 | Nxp, B.V. | Ferroelectric varactor with improved tuning range |
| US7532384B2 (en) * | 2006-11-15 | 2009-05-12 | Massachusetts Institute Of Technology | π-Phase shift device for light |
| US7869335B2 (en) * | 2007-10-09 | 2011-01-11 | Seagate Technology Llc | Multiple ferroelectric films |
| US8179009B2 (en) | 2008-07-28 | 2012-05-15 | Direct Drive Systems, Inc. | Rotor for an electric machine |
| US20160133758A1 (en) * | 2014-05-08 | 2016-05-12 | Triquint Semiconductor, Inc. | Dual stack varactor |
| US20150325573A1 (en) | 2014-05-08 | 2015-11-12 | Triquint Semiconductor, Inc. | Dual stack varactor |
| US10109623B2 (en) | 2014-05-08 | 2018-10-23 | Qorvo Us, Inc. | Dual-series varactor EPI |
| US9484471B2 (en) | 2014-09-12 | 2016-11-01 | Qorvo Us, Inc. | Compound varactor |
| DE102016102501A1 (de) * | 2016-02-12 | 2017-08-17 | Technische Universität Darmstadt | Mikroelektronische Elektrodenanordnung |
| US10892728B2 (en) * | 2018-12-20 | 2021-01-12 | Mitsubishi Electric Research Laboratories, Inc. | Virtual inductors using ferroelectric capacitance and the fabrication method thereof |
| WO2025022924A1 (ja) * | 2023-07-24 | 2025-01-30 | 株式会社村田製作所 | 可変容量ダイオードおよび可変容量ダイオードの製造方法 |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5270298A (en) | 1992-03-05 | 1993-12-14 | Bell Communications Research, Inc. | Cubic metal oxide thin film epitaxially grown on silicon |
| JPH0677402A (ja) * | 1992-07-02 | 1994-03-18 | Natl Semiconductor Corp <Ns> | 半導体デバイス用誘電体構造及びその製造方法 |
| US5472935A (en) | 1992-12-01 | 1995-12-05 | Yandrofski; Robert M. | Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films |
| US5977577A (en) * | 1994-11-15 | 1999-11-02 | Radiant Technologies, Inc | Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation |
| US6151240A (en) * | 1995-06-01 | 2000-11-21 | Sony Corporation | Ferroelectric nonvolatile memory and oxide multi-layered structure |
| US5640042A (en) * | 1995-12-14 | 1997-06-17 | The United States Of America As Represented By The Secretary Of The Army | Thin film ferroelectric varactor |
| JP3546278B2 (ja) * | 1996-04-19 | 2004-07-21 | トヨタ自動車株式会社 | 内燃機関の動弁装置 |
| JP3103916B2 (ja) * | 1997-07-09 | 2000-10-30 | ソニー株式会社 | 強誘電体キャパシタおよびその製造方法並びにそれを用いたメモリセル |
| JP3482883B2 (ja) * | 1998-08-24 | 2004-01-06 | 株式会社村田製作所 | 強誘電体薄膜素子およびその製造方法 |
-
2000
- 2000-06-20 SE SE0002296A patent/SE517440C2/sv not_active IP Right Cessation
- 2000-07-17 TW TW089114262A patent/TW475272B/zh not_active IP Right Cessation
-
2001
- 2001-06-12 EP EP01941368A patent/EP1307924B1/de not_active Expired - Lifetime
- 2001-06-12 AT AT01941368T patent/ATE520153T1/de not_active IP Right Cessation
- 2001-06-12 AU AU2001274727A patent/AU2001274727A1/en not_active Abandoned
- 2001-06-12 WO PCT/SE2001/001321 patent/WO2001099200A1/en not_active Ceased
- 2001-06-20 US US09/885,520 patent/US6563153B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| AU2001274727A1 (en) | 2002-01-02 |
| US20010054748A1 (en) | 2001-12-27 |
| TW475272B (en) | 2002-02-01 |
| SE0002296L (sv) | 2001-12-21 |
| US6563153B2 (en) | 2003-05-13 |
| WO2001099200A1 (en) | 2001-12-27 |
| EP1307924A1 (de) | 2003-05-07 |
| EP1307924B1 (de) | 2011-08-10 |
| SE0002296D0 (sv) | 2000-06-20 |
| ATE520153T1 (de) | 2011-08-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| NUG | Patent has lapsed |