AU2001274727A1 - Electrically tunable device and a method relating thereto - Google Patents

Electrically tunable device and a method relating thereto

Info

Publication number
AU2001274727A1
AU2001274727A1 AU2001274727A AU7472701A AU2001274727A1 AU 2001274727 A1 AU2001274727 A1 AU 2001274727A1 AU 2001274727 A AU2001274727 A AU 2001274727A AU 7472701 A AU7472701 A AU 7472701A AU 2001274727 A1 AU2001274727 A1 AU 2001274727A1
Authority
AU
Australia
Prior art keywords
ferroelectric
layer
method relating
electrically tunable
tunable device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2001274727A
Inventor
Spartak Gevorgian
Zdravko Ivanov
Peter Petrov
Erland Wikborg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Telefonaktiebolaget LM Ericsson AB
Original Assignee
Telefonaktiebolaget LM Ericsson AB
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Telefonaktiebolaget LM Ericsson AB filed Critical Telefonaktiebolaget LM Ericsson AB
Publication of AU2001274727A1 publication Critical patent/AU2001274727A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Thermistors And Varistors (AREA)
  • Inorganic Insulating Materials (AREA)
  • Electrotherapy Devices (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

Abstract

A thin film ferroelectric varactor device comprising a substrate layer, a ferroelectric layer structure and an electrode structure is presented. The ferroelectric layer structure comprises a number of ferroelectric layers and a number of intermediate buffer layers arranged in an alternating manner. At least a first and a second layer of the ferroelectric layers have different Curie temperatures, i.e. the dielectric constant of the first ferroelectric layer has a maximum at a temperature which is different from the temperature at which the dielectric constant of the second ferroelectric layer has a maximum.
AU2001274727A 2000-06-20 2001-06-12 Electrically tunable device and a method relating thereto Abandoned AU2001274727A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
SE0002296 2000-06-20
SE0002296A SE517440C2 (en) 2000-06-20 2000-06-20 Electrically tunable device and a method related thereto
PCT/SE2001/001321 WO2001099200A1 (en) 2000-06-20 2001-06-12 Electrically tunable device and a method relating thereto

Publications (1)

Publication Number Publication Date
AU2001274727A1 true AU2001274727A1 (en) 2002-01-02

Family

ID=20280153

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2001274727A Abandoned AU2001274727A1 (en) 2000-06-20 2001-06-12 Electrically tunable device and a method relating thereto

Country Status (7)

Country Link
US (1) US6563153B2 (en)
EP (1) EP1307924B1 (en)
AT (1) ATE520153T1 (en)
AU (1) AU2001274727A1 (en)
SE (1) SE517440C2 (en)
TW (1) TW475272B (en)
WO (1) WO2001099200A1 (en)

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US6727535B1 (en) * 1998-11-09 2004-04-27 Paratek Microwave, Inc. Ferroelectric varactor with built-in DC blocks
US6617062B2 (en) * 2001-04-13 2003-09-09 Paratek Microwave, Inc. Strain-relieved tunable dielectric thin films
FR2826780A1 (en) * 2001-06-28 2003-01-03 St Microelectronics Sa SEMICONDUCTOR DEVICE WITH MICROWAVE STRUCTURE
SE519705C2 (en) * 2001-08-22 2003-04-01 Ericsson Telefon Ab L M A tunable ferroelectric resonator device
WO2003026059A1 (en) * 2001-09-20 2003-03-27 Paratek Microwave, Inc. Tunable filters having variable bandwidth and variable delay
US20040195542A1 (en) * 2002-08-08 2004-10-07 Laurent Bellaiche Enhanced electromechanical properties in atomically-ordered ferroelectric alloys
US20060035023A1 (en) * 2003-08-07 2006-02-16 Wontae Chang Method for making a strain-relieved tunable dielectric thin film
AU2003295303A1 (en) * 2003-12-30 2005-07-21 Telefonaktiebolaget Lm Ericsson (Publ) Tunable microwave arrangements
US20080165565A1 (en) * 2004-01-12 2008-07-10 Eidgenossische Technische Hochschule Zurich Ferroelectric Thin Films and Devices Comprising Thin Ferroelectric Films
US7053728B2 (en) 2004-03-19 2006-05-30 Avago Technologies General Ip Pte. Ltd. Impedance transformation network, power amplifier and method for efficiently transmitting output signal using a series varactor device
US20060000542A1 (en) * 2004-06-30 2006-01-05 Yongki Min Metal oxide ceramic thin film on base metal electrode
WO2006034119A1 (en) * 2004-09-17 2006-03-30 Massachusetts Institue Of Technology BST INTEGRATION USING THIN BUFFER LAYER GROWN DIRECTLY ONTO SiO2/Si SUBSTRATE
US7290315B2 (en) * 2004-10-21 2007-11-06 Intel Corporation Method for making a passive device structure
US20060099803A1 (en) * 2004-10-26 2006-05-11 Yongki Min Thin film capacitor
US20060091495A1 (en) * 2004-10-29 2006-05-04 Palanduz Cengiz A Ceramic thin film on base metal electrode
US7375412B1 (en) * 2005-03-31 2008-05-20 Intel Corporation iTFC with optimized C(T)
US7629269B2 (en) * 2005-03-31 2009-12-08 Intel Corporation High-k thin film grain size control
US20060220177A1 (en) * 2005-03-31 2006-10-05 Palanduz Cengiz A Reduced porosity high-k thin film mixed grains for thin film capacitor applications
US7453144B2 (en) * 2005-06-29 2008-11-18 Intel Corporation Thin film capacitors and methods of making the same
WO2007032452A1 (en) * 2005-09-14 2007-03-22 Kyocera Corporation Variable resonance circuit, filter, communication apparatus and method for regulating temperature characteristics of variable resonance circuit
EP2076910A2 (en) * 2006-10-25 2009-07-08 Nxp B.V. Ferroelectric varactor with improved tuning range
US7532384B2 (en) * 2006-11-15 2009-05-12 Massachusetts Institute Of Technology π-Phase shift device for light
US7869335B2 (en) * 2007-10-09 2011-01-11 Seagate Technology Llc Multiple ferroelectric films
US8237320B2 (en) 2008-07-28 2012-08-07 Direct Drive Systems, Inc. Thermally matched composite sleeve
US20160133758A1 (en) * 2014-05-08 2016-05-12 Triquint Semiconductor, Inc. Dual stack varactor
US10109623B2 (en) 2014-05-08 2018-10-23 Qorvo Us, Inc. Dual-series varactor EPI
US20150325573A1 (en) 2014-05-08 2015-11-12 Triquint Semiconductor, Inc. Dual stack varactor
US9484471B2 (en) 2014-09-12 2016-11-01 Qorvo Us, Inc. Compound varactor
DE102016102501A1 (en) * 2016-02-12 2017-08-17 Technische Universität Darmstadt Microelectronic electrode arrangement
US10892728B2 (en) * 2018-12-20 2021-01-12 Mitsubishi Electric Research Laboratories, Inc. Virtual inductors using ferroelectric capacitance and the fabrication method thereof

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US5270298A (en) 1992-03-05 1993-12-14 Bell Communications Research, Inc. Cubic metal oxide thin film epitaxially grown on silicon
JPH0677402A (en) * 1992-07-02 1994-03-18 Natl Semiconductor Corp <Ns> Dielectric structure for semiconductor device and its manufacture
US5472935A (en) 1992-12-01 1995-12-05 Yandrofski; Robert M. Tuneable microwave devices incorporating high temperature superconducting and ferroelectric films
US5977577A (en) * 1994-11-15 1999-11-02 Radiant Technologies, Inc Ferroelectric based memory devices utilizing low curie point ferroelectrics and encapsulation
US6151240A (en) * 1995-06-01 2000-11-21 Sony Corporation Ferroelectric nonvolatile memory and oxide multi-layered structure
US5640042A (en) * 1995-12-14 1997-06-17 The United States Of America As Represented By The Secretary Of The Army Thin film ferroelectric varactor
JP3546278B2 (en) * 1996-04-19 2004-07-21 トヨタ自動車株式会社 Valve train for internal combustion engine
JP3103916B2 (en) * 1997-07-09 2000-10-30 ソニー株式会社 Ferroelectric capacitor, method of manufacturing the same, and memory cell using the same
JP3482883B2 (en) * 1998-08-24 2004-01-06 株式会社村田製作所 Ferroelectric thin film element and method of manufacturing the same

Also Published As

Publication number Publication date
US6563153B2 (en) 2003-05-13
EP1307924A1 (en) 2003-05-07
SE0002296L (en) 2001-12-21
ATE520153T1 (en) 2011-08-15
WO2001099200A1 (en) 2001-12-27
SE517440C2 (en) 2002-06-04
EP1307924B1 (en) 2011-08-10
SE0002296D0 (en) 2000-06-20
US20010054748A1 (en) 2001-12-27
TW475272B (en) 2002-02-01

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