ATE510049T1 - Fertigungsanlage für polysiliciumblöcke - Google Patents

Fertigungsanlage für polysiliciumblöcke

Info

Publication number
ATE510049T1
ATE510049T1 AT07252406T AT07252406T ATE510049T1 AT E510049 T1 ATE510049 T1 AT E510049T1 AT 07252406 T AT07252406 T AT 07252406T AT 07252406 T AT07252406 T AT 07252406T AT E510049 T1 ATE510049 T1 AT E510049T1
Authority
AT
Austria
Prior art keywords
melting pot
cooling plate
cooling
heaters
production plant
Prior art date
Application number
AT07252406T
Other languages
German (de)
English (en)
Inventor
Young Sang Cho
Young Jo Kim
Original Assignee
Young Sang Cho
Young Jo Kim
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Young Sang Cho, Young Jo Kim filed Critical Young Sang Cho
Application granted granted Critical
Publication of ATE510049T1 publication Critical patent/ATE510049T1/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B28/00—Production of homogeneous polycrystalline material with defined structure
    • C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
    • C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • C30B35/002—Crucibles or containers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Silicon Compounds (AREA)
AT07252406T 2006-06-13 2007-06-13 Fertigungsanlage für polysiliciumblöcke ATE510049T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20060053214 2006-06-13
KR1020070027424A KR100861412B1 (ko) 2006-06-13 2007-03-21 다결정 실리콘 잉곳 제조장치

Publications (1)

Publication Number Publication Date
ATE510049T1 true ATE510049T1 (de) 2011-06-15

Family

ID=38942729

Family Applications (1)

Application Number Title Priority Date Filing Date
AT07252406T ATE510049T1 (de) 2006-06-13 2007-06-13 Fertigungsanlage für polysiliciumblöcke

Country Status (3)

Country Link
KR (1) KR100861412B1 (ko)
CN (1) CN101089233B (ko)
AT (1) ATE510049T1 (ko)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010005705A1 (en) * 2008-06-16 2010-01-14 Gt Solar Incorporated Systems and methods for growing monocrystalline silicon ingots by directional solidification
CN101323972B (zh) * 2008-07-14 2010-06-02 大连理工大学 一种多晶硅定向凝固设备
KR20100024675A (ko) * 2008-08-26 2010-03-08 주식회사 아바코 잉곳 제조 장치 및 제조 방법
KR100902859B1 (ko) * 2009-02-17 2009-06-16 (주) 썸백엔지니어링 태양전지용 실리콘 제조용 캐스팅 장치
KR101101989B1 (ko) 2009-03-27 2012-01-02 최종오 폴리 실리콘의 제조방법 및 제조장치
KR101079618B1 (ko) 2009-08-11 2011-11-04 (주)원익머트리얼즈 금속실리콘 정제장치
KR101023022B1 (ko) * 2009-09-07 2011-03-24 한국과학기술원 실리콘 제조장치 및 실리콘 제조방법
KR101217458B1 (ko) * 2009-09-24 2013-01-07 주식회사 글로실 회전형 도어 개폐장치가 구비된 다결정 실리콘 주괴 제조장치
KR100947836B1 (ko) * 2009-09-28 2010-03-18 (주)세미머티리얼즈 실리콘 잉곳 제조장치
KR101620935B1 (ko) 2009-12-14 2016-05-13 주식회사 케이씨씨 실리콘 잉고트의 인출장치 및 방법
KR101139845B1 (ko) * 2010-04-29 2012-04-30 한국화학연구원 태양전지용 고 생산성 다결정 실리콘 잉곳 제조 장치
CN102071454A (zh) * 2011-02-17 2011-05-25 浙江晶盛机电股份有限公司 用于多晶铸锭炉的气体冷却装置及方法
CN102732959A (zh) * 2011-04-11 2012-10-17 上海普罗新能源有限公司 多晶硅铸锭炉和多晶硅铸锭方法
KR101270071B1 (ko) * 2011-06-30 2013-06-04 (주)세미머티리얼즈 실리콘 연속 주조 장치 및 방법
US20130239621A1 (en) * 2011-09-14 2013-09-19 MEMC Singapore, Pte. Ltd. (UEN200614797D) Directional Solidification Furnace With Laterally Movable Insulation System
WO2013040219A1 (en) 2011-09-14 2013-03-21 Memc Singapore Pte, Ltd. Directional solidification furnace having movable heat exchangers
NL2007809C2 (en) 2011-11-17 2013-05-21 Draka Comteq Bv An apparatus for performing a plasma chemical vapour deposition process.
TWI490379B (zh) * 2012-04-30 2015-07-01 Eversol Corp 無定向晶種長晶方法及裝置
WO2015047828A1 (en) 2013-09-30 2015-04-02 Gt Crystal Systems, Llc A technique for controlling temperature uniformity in crystal growth apparatus
CN105586636A (zh) * 2016-02-18 2016-05-18 安徽旭能光伏电力有限公司 一种定向凝固生长太阳能电池用的多晶硅锭制造工艺
JP7186534B2 (ja) 2018-07-25 2022-12-09 昭和電工株式会社 結晶成長装置
CN109112621A (zh) * 2018-10-30 2019-01-01 浙江羿阳太阳能科技有限公司 一种节能铸锭装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63166711A (ja) * 1986-12-26 1988-07-09 Osaka Titanium Seizo Kk 多結晶シリコン鋳塊の製造法
JP3520957B2 (ja) * 1997-06-23 2004-04-19 シャープ株式会社 多結晶半導体インゴットの製造方法および装置
DE19855061B4 (de) * 1998-11-28 2012-05-16 Ald Vacuum Technologies Ag Schmelzofen zum Schmelzen von Silizium

Also Published As

Publication number Publication date
CN101089233A (zh) 2007-12-19
KR100861412B1 (ko) 2008-10-07
KR20070118945A (ko) 2007-12-18
CN101089233B (zh) 2011-12-28

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