ATE506695T1 - Chemisch-mechanisches polierstück mit wellenförmigen rillen - Google Patents

Chemisch-mechanisches polierstück mit wellenförmigen rillen

Info

Publication number
ATE506695T1
ATE506695T1 AT01965710T AT01965710T ATE506695T1 AT E506695 T1 ATE506695 T1 AT E506695T1 AT 01965710 T AT01965710 T AT 01965710T AT 01965710 T AT01965710 T AT 01965710T AT E506695 T1 ATE506695 T1 AT E506695T1
Authority
AT
Austria
Prior art keywords
mechanical polishing
shaped grooves
chemical
wavy
polishing piece
Prior art date
Application number
AT01965710T
Other languages
English (en)
Inventor
In-Ha Park
Jae-Seok Kim
In-Ju Hwang
Tae-Kyoung Kwon
Original Assignee
Skc Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skc Co Ltd filed Critical Skc Co Ltd
Application granted granted Critical
Publication of ATE506695T1 publication Critical patent/ATE506695T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S451/00—Abrading
    • Y10S451/921—Pad for lens shaping tool
AT01965710T 2001-08-16 2001-08-29 Chemisch-mechanisches polierstück mit wellenförmigen rillen ATE506695T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020010049354A KR20030015567A (ko) 2001-08-16 2001-08-16 웨이브 형태의 그루브가 형성된 화학적 기계적 연마패드
PCT/KR2001/001464 WO2003017347A1 (en) 2001-08-16 2001-08-29 Chemical mechanical polishing pad having wave-shaped grooves

Publications (1)

Publication Number Publication Date
ATE506695T1 true ATE506695T1 (de) 2011-05-15

Family

ID=19713250

Family Applications (1)

Application Number Title Priority Date Filing Date
AT01965710T ATE506695T1 (de) 2001-08-16 2001-08-29 Chemisch-mechanisches polierstück mit wellenförmigen rillen

Country Status (9)

Country Link
US (1) US6729950B2 (de)
EP (1) EP1433197B1 (de)
JP (1) JP2005500689A (de)
KR (1) KR20030015567A (de)
CN (1) CN1284210C (de)
AT (1) ATE506695T1 (de)
DE (1) DE60144494D1 (de)
TW (1) TW504429B (de)
WO (1) WO2003017347A1 (de)

Families Citing this family (60)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7059948B2 (en) * 2000-12-22 2006-06-13 Applied Materials Articles for polishing semiconductor substrates
US7066800B2 (en) * 2000-02-17 2006-06-27 Applied Materials Inc. Conductive polishing article for electrochemical mechanical polishing
US6979248B2 (en) * 2002-05-07 2005-12-27 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US20040020789A1 (en) * 2000-02-17 2004-02-05 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7029365B2 (en) * 2000-02-17 2006-04-18 Applied Materials Inc. Pad assembly for electrochemical mechanical processing
US6962524B2 (en) * 2000-02-17 2005-11-08 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7303462B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Edge bead removal by an electro polishing process
US20050092621A1 (en) * 2000-02-17 2005-05-05 Yongqi Hu Composite pad assembly for electrochemical mechanical processing (ECMP)
US6991528B2 (en) * 2000-02-17 2006-01-31 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7374644B2 (en) * 2000-02-17 2008-05-20 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7670468B2 (en) * 2000-02-17 2010-03-02 Applied Materials, Inc. Contact assembly and method for electrochemical mechanical processing
US20080156657A1 (en) * 2000-02-17 2008-07-03 Butterfield Paul D Conductive polishing article for electrochemical mechanical polishing
US7303662B2 (en) * 2000-02-17 2007-12-04 Applied Materials, Inc. Contacts for electrochemical processing
US7077721B2 (en) * 2000-02-17 2006-07-18 Applied Materials, Inc. Pad assembly for electrochemical mechanical processing
US7125477B2 (en) * 2000-02-17 2006-10-24 Applied Materials, Inc. Contacts for electrochemical processing
US7678245B2 (en) * 2000-02-17 2010-03-16 Applied Materials, Inc. Method and apparatus for electrochemical mechanical processing
US8485862B2 (en) * 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
US7137879B2 (en) * 2001-04-24 2006-11-21 Applied Materials, Inc. Conductive polishing article for electrochemical mechanical polishing
US7344432B2 (en) * 2001-04-24 2008-03-18 Applied Materials, Inc. Conductive pad with ion exchange membrane for electrochemical mechanical polishing
US20030072639A1 (en) * 2001-10-17 2003-04-17 Applied Materials, Inc. Substrate support
JP3843933B2 (ja) * 2002-02-07 2006-11-08 ソニー株式会社 研磨パッド、研磨装置および研磨方法
US20050194681A1 (en) * 2002-05-07 2005-09-08 Yongqi Hu Conductive pad with high abrasion
TWI250572B (en) * 2002-06-03 2006-03-01 Jsr Corp Polishing pad and multi-layer polishing pad
US6942549B2 (en) * 2003-10-29 2005-09-13 International Business Machines Corporation Two-sided chemical mechanical polishing pad for semiconductor processing
US7018274B2 (en) * 2003-11-13 2006-03-28 Rohm And Haas Electronic Materials Cmp Holdings, Inc Polishing pad having slurry utilization enhancing grooves
US7125318B2 (en) * 2003-11-13 2006-10-24 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad having a groove arrangement for reducing slurry consumption
JP2005177897A (ja) * 2003-12-17 2005-07-07 Nec Electronics Corp 研磨方法および研磨装置と半導体装置製造方法
US20050178666A1 (en) * 2004-01-13 2005-08-18 Applied Materials, Inc. Methods for fabrication of a polishing article
US6955587B2 (en) * 2004-01-30 2005-10-18 Rohm And Haas Electronic Materials Cmp Holdings, Inc Grooved polishing pad and method
US20060030156A1 (en) * 2004-08-05 2006-02-09 Applied Materials, Inc. Abrasive conductive polishing article for electrochemical mechanical polishing
US7252582B2 (en) * 2004-08-25 2007-08-07 Jh Rhodes Company, Inc. Optimized grooving structure for a CMP polishing pad
US7084064B2 (en) * 2004-09-14 2006-08-01 Applied Materials, Inc. Full sequence metal and barrier layer electrochemical mechanical processing
WO2006039436A2 (en) * 2004-10-01 2006-04-13 Applied Materials, Inc. Pad design for electrochemical mechanical polishing
US7520968B2 (en) * 2004-10-05 2009-04-21 Applied Materials, Inc. Conductive pad design modification for better wafer-pad contact
US7131895B2 (en) * 2005-01-13 2006-11-07 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having a radially alternating groove segment configuration
TWI385050B (zh) * 2005-02-18 2013-02-11 Nexplanar Corp 用於ｃｍｐ之特製拋光墊及其製造方法及其用途
US20060219663A1 (en) * 2005-03-31 2006-10-05 Applied Materials, Inc. Metal CMP process on one or more polishing stations using slurries with oxidizers
US7427340B2 (en) * 2005-04-08 2008-09-23 Applied Materials, Inc. Conductive pad
JP2007030157A (ja) * 2005-06-20 2007-02-08 Elpida Memory Inc 研磨装置及び研磨方法
KR100752181B1 (ko) * 2005-10-05 2007-08-24 동부일렉트로닉스 주식회사 화학적 기계적 연마장치
KR20070070094A (ko) * 2005-12-28 2007-07-03 제이에스알 가부시끼가이샤 화학 기계 연마 패드 및 화학 기계 연마 방법
US20080220702A1 (en) * 2006-07-03 2008-09-11 Sang Fang Chemical Industry Co., Ltd. Polishing pad having surface texture
US20080003935A1 (en) * 2006-07-03 2008-01-03 Chung-Chih Feng Polishing pad having surface texture
US7267610B1 (en) * 2006-08-30 2007-09-11 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having unevenly spaced grooves
US8002611B2 (en) * 2006-12-27 2011-08-23 Texas Instruments Incorporated Chemical mechanical polishing pad having improved groove pattern
US20080293343A1 (en) * 2007-05-22 2008-11-27 Yuchun Wang Pad with shallow cells for electrochemical mechanical processing
US9180570B2 (en) * 2008-03-14 2015-11-10 Nexplanar Corporation Grooved CMP pad
KR101004256B1 (ko) 2008-03-20 2011-01-03 엠.씨.케이 (주) 연마패드 및 그 제조방법
TWI449597B (zh) * 2008-07-09 2014-08-21 Iv Technologies Co Ltd 研磨墊及其製造方法
TWI535527B (zh) * 2009-07-20 2016-06-01 智勝科技股份有限公司 研磨方法、研磨墊與研磨系統
KR101044281B1 (ko) * 2009-07-30 2011-06-28 서강대학교산학협력단 기공이 형성된 ｃｍｐ 연마패드와 그의 제조방법
WO2012036444A2 (ko) * 2010-09-15 2012-03-22 주식회사 엘지화학 Cmp용 연마 패드
EP2546105B1 (de) 2011-07-14 2014-05-21 LG Electronics Inc. Haltevorrichtung für tragbare elektronische Vorrichtung
KR101295921B1 (ko) * 2011-11-07 2013-08-13 주식회사 엘지실트론 연마패드의 표면처리방법 및 이를 이용한 웨이퍼의 연마방법
CN103372812A (zh) * 2013-07-12 2013-10-30 中国科学院上海光学精密机械研究所 大型环抛机抛光胶盘的开槽装置
US9849562B2 (en) 2015-12-28 2017-12-26 Shine-File Llc And manufacture of an abrasive polishing tool
CN105619202A (zh) * 2016-02-26 2016-06-01 上海华力微电子有限公司 一种化学机械研磨装置及其化学机械研磨方法
TWI595968B (zh) * 2016-08-11 2017-08-21 宋建宏 研磨墊及其製造方法
CN110842764A (zh) * 2019-11-18 2020-02-28 张俊杰 一种用于超硬陶瓷球体部件研制的研磨盘装置
CN113153380B (zh) * 2021-05-18 2022-04-26 中铁第四勘察设计院集团有限公司 一种用于提高盾构隧道中管片接缝防水性能的方法

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60109859U (ja) * 1983-12-28 1985-07-25 株式会社　デイスコ 半導体ウエ−ハ表面研削装置
US5177908A (en) * 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5329734A (en) * 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
JPH0752033A (ja) * 1993-08-06 1995-02-28 Sumitomo Metal Ind Ltd 研磨装置
US5650039A (en) * 1994-03-02 1997-07-22 Applied Materials, Inc. Chemical mechanical polishing apparatus with improved slurry distribution
JP3042593B2 (ja) * 1995-10-25 2000-05-15 日本電気株式会社 研磨パッド
JP2865061B2 (ja) * 1996-06-27 1999-03-08 日本電気株式会社 研磨パッドおよび研磨装置ならびに半導体装置の製造方法
US5645469A (en) * 1996-09-06 1997-07-08 Advanced Micro Devices, Inc. Polishing pad with radially extending tapered channels
US5921855A (en) * 1997-05-15 1999-07-13 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing system
US6273806B1 (en) * 1997-05-15 2001-08-14 Applied Materials, Inc. Polishing pad having a grooved pattern for use in a chemical mechanical polishing apparatus
JPH11285962A (ja) * 1998-04-06 1999-10-19 Sony Corp 研磨パッド、研磨装置および研磨方法
JP3920465B2 (ja) * 1998-08-04 2007-05-30 信越半導体株式会社 研磨方法および研磨装置
GB2345255B (en) * 1998-12-29 2000-12-27 United Microelectronics Corp Chemical-Mechanical Polishing Pad
US6220942B1 (en) * 1999-04-02 2001-04-24 Applied Materials, Inc. CMP platen with patterned surface
US6238271B1 (en) * 1999-04-30 2001-05-29 Speed Fam-Ipec Corp. Methods and apparatus for improved polishing of workpieces
US6261168B1 (en) * 1999-05-21 2001-07-17 Lam Research Corporation Chemical mechanical planarization or polishing pad with sections having varied groove patterns
KR20010002470A (ko) * 1999-06-15 2001-01-15 고석태 화학적 기계적 폴리싱 장치용 폴리싱 패드의 그루브 패턴
JP2001071256A (ja) * 1999-08-31 2001-03-21 Shinozaki Seisakusho:Kk 研磨パッドの溝形成方法及び装置並びに研磨パッド
KR100348525B1 (ko) * 1999-10-09 2002-08-14 동성에이앤티 주식회사 다양한 표면 그루브패턴을 갖는 연마패드
JP2001179611A (ja) * 1999-12-24 2001-07-03 Nec Corp 化学的機械研磨装置
US6241596B1 (en) * 2000-01-14 2001-06-05 Applied Materials, Inc. Method and apparatus for chemical mechanical polishing using a patterned pad
US6443815B1 (en) * 2000-09-22 2002-09-03 Lam Research Corporation Apparatus and methods for controlling pad conditioning head tilt for chemical mechanical polishing
JP2004537175A (ja) * 2001-08-02 2004-12-09 エスケーシー カンパニー，リミテッド レーザーを使用した化学的機械的研磨パッドの製造方法

Also Published As

Publication number Publication date
WO2003017347A1 (en) 2003-02-27
KR20030015567A (ko) 2003-02-25
CN1543670A (zh) 2004-11-03
JP2005500689A (ja) 2005-01-06
EP1433197A1 (de) 2004-06-30
EP1433197B1 (de) 2011-04-20
CN1284210C (zh) 2006-11-08
US6729950B2 (en) 2004-05-04
EP1433197A4 (de) 2008-04-09
DE60144494D1 (de) 2011-06-01
TW504429B (en) 2002-10-01
US20030034131A1 (en) 2003-02-20

Similar Documents

Publication Publication Date Title
ATE506695T1 (de) Chemisch-mechanisches polierstück mit wellenförmigen rillen
USD518648S1 (en) Surface pattern for embossed films
MY137517A (en) Polishing pad comprising hydrophobic region and endpoint detection port
ATE322959T1 (de) Polierartikel zum elektrochemisch-mechanischen polieren von substraten
TW200500167A (en) Polishing pad with optimized grooves and method of forming same
WO2002053322A3 (en) System and method for polishing and planarization of semiconductor wafers using reduced surface area polishing pads
DE60232469D1 (de) Leitender Polierkörper zum elektrochemisch-mechanischen Polieren
IL155856A0 (en) Abrasive article having a window system for polishing wafers, and methods
DE60115710D1 (de) Artikel mit flixiertem schleifmittel zum verändern einer halbleiterscheibe
MY131030A (en) Polishing pad with oriented pore structure
SG152899A1 (en) Chemical mechanical planarization or polishing pad with sections having varied groove patterns
GB2376908A (en) A workpiece carrier with adjustable pressure zones and barriers
ATE409212T1 (de) An feststoff gebundener radikalbildender aktivator und verwendung zur verbesserung von formulierungen für das chemisch-mechanische polieren
WO2003083918A1 (fr) Tampon a polir et procede de fabrication de substrat a semi-conducteurs utilisant ce tampon a polir
ATE317314T1 (de) Schleifscheibe mit schleifsegmenten
DE60144538D1 (de) Chemisches mechanisches polierstück mit mikrolöchern
MY135136A (en) Undulated pad conditioner and method of using same
TW373258B (en) Polishing of planarized semiconductors
EP1580802A4 (de) Schlammzusammensetzung für chemisch-mechanisches polieren, verfahren zur oberflächenplanarisierung eines halbleiterbauelements damit sowie kontrollverfahren zur auswahl des verhältnisses der schlammzusammensetzung
MY119974A (en) Method for polishing a memory or rigid disk with an amino acid-containing composition
TW200531784A (en) Chemical mechanical polishing pad
MY137105A (en) Chemical mechanical polishing pad having wave-shaped grooves
DE50106751D1 (de) Schleiflamelle und Schleifteller mit einer Mehrzahl von solchen
MY137114A (en) Chemical mechanical polishing pad having holes and/or grooves
KR100327306B1 (ko) 다양한 표면 그루브패턴을 갖는 연마패드

Legal Events

Date Code Title Description
RER Ceased as to paragraph 5 lit. 3 law introducing patent treaties