ATE503299T1 - Temperaturunempfindliche vorspannschaltung für hochleistungsverstärker - Google Patents

Temperaturunempfindliche vorspannschaltung für hochleistungsverstärker

Info

Publication number
ATE503299T1
ATE503299T1 AT04776283T AT04776283T ATE503299T1 AT E503299 T1 ATE503299 T1 AT E503299T1 AT 04776283 T AT04776283 T AT 04776283T AT 04776283 T AT04776283 T AT 04776283T AT E503299 T1 ATE503299 T1 AT E503299T1
Authority
AT
Austria
Prior art keywords
bipolar transistor
bias circuit
power amplifier
high power
node
Prior art date
Application number
AT04776283T
Other languages
English (en)
Inventor
Youngoo Yang
Kevin Choi
Nai-Chuo Cheng
Original Assignee
Skyworks Solutions Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skyworks Solutions Inc filed Critical Skyworks Solutions Inc
Application granted granted Critical
Publication of ATE503299T1 publication Critical patent/ATE503299T1/de

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/18—Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Control Of Voltage And Current In General (AREA)
AT04776283T 2003-08-08 2004-06-04 Temperaturunempfindliche vorspannschaltung für hochleistungsverstärker ATE503299T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/637,146 US6946911B2 (en) 2003-08-08 2003-08-08 Temperature-insensitive bias circuit for high-power amplifiers
PCT/US2004/017664 WO2005017956A2 (en) 2003-08-08 2004-06-04 Temperature-insensitive bias circuit for high-power amplifiers

Publications (1)

Publication Number Publication Date
ATE503299T1 true ATE503299T1 (de) 2011-04-15

Family

ID=34116539

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04776283T ATE503299T1 (de) 2003-08-08 2004-06-04 Temperaturunempfindliche vorspannschaltung für hochleistungsverstärker

Country Status (8)

Country Link
US (1) US6946911B2 (de)
EP (1) EP1652295B1 (de)
JP (1) JP2007502051A (de)
KR (1) KR100661704B1 (de)
CN (1) CN100481716C (de)
AT (1) ATE503299T1 (de)
DE (1) DE602004031948D1 (de)
WO (1) WO2005017956A2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6992524B2 (en) * 2003-09-08 2006-01-31 Skyworks Solutions, Inc. Quiescent current control circuit for high-power amplifiers
JP2008017453A (ja) * 2006-06-07 2008-01-24 Matsushita Electric Ind Co Ltd 高周波増幅回路及びそれを用いた移動体通信端末
US7639080B2 (en) * 2006-06-07 2009-12-29 Panasonic Corporation Radio frequency amplifier circuit and mobile communication terminal using the same
US7554407B2 (en) * 2007-03-07 2009-06-30 Fairchild Semiconductor Corporation Multi-mode power amplifier with low gain variation over temperature
JP4901703B2 (ja) * 2007-11-28 2012-03-21 株式会社東芝 温度補償回路
US7612613B2 (en) * 2008-02-05 2009-11-03 Freescale Semiconductor, Inc. Self regulating biasing circuit
JP5107272B2 (ja) 2009-01-15 2012-12-26 株式会社東芝 温度補償回路
US8669808B2 (en) * 2009-09-14 2014-03-11 Mediatek Inc. Bias circuit and phase-locked loop circuit using the same
JP5672150B2 (ja) * 2011-05-26 2015-02-18 富士通株式会社 増幅装置、送信機、及び増幅装置制御方法
KR20160055492A (ko) * 2014-11-10 2016-05-18 삼성전기주식회사 바이어스 회로 및 이를 갖는 전력 증폭기
JP2018142833A (ja) * 2017-02-27 2018-09-13 株式会社村田製作所 電力増幅回路
CN108134585B (zh) * 2017-12-12 2024-05-14 无锡中普微电子有限公司 射频功率放大电路及其超带宽输出匹配电路
KR102029553B1 (ko) * 2017-12-22 2019-10-07 삼성전기주식회사 선형성 향상을 위한 바이어스 회로 및 파워 증폭 회로
TWI647906B (zh) * 2018-06-22 2019-01-11 國家中山科學研究院 High voltage pulse wave bias circuit
TWI875525B (zh) 2018-08-01 2025-03-01 美商天工方案公司 功率放大器系統、用於調整一功率放大器級之一增益之方法及行動裝置
KR102127808B1 (ko) * 2018-08-09 2020-06-29 삼성전기주식회사 응답속도가 개선된 파워 증폭 장치
US10903797B2 (en) * 2019-02-20 2021-01-26 Rafael Microelectronics, Inc. Bias circuit based on BiFET technology for supplying a bias current to an RF power amplifier
US20250219599A1 (en) * 2023-12-29 2025-07-03 Skyworks Solutions, Inc. Gain performance circuit

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5416365A (en) * 1992-08-31 1995-05-16 National Semiconductor Corporation Local feedback stabilized emitter follower cascade
JPH10200339A (ja) * 1997-01-10 1998-07-31 Nec Corp 電界効果トランジスタ用バイアス回路
JP3922773B2 (ja) * 1997-11-27 2007-05-30 三菱電機株式会社 電力増幅器
JP3471648B2 (ja) * 1999-02-26 2003-12-02 富士通カンタムデバイス株式会社 パワーアンプ回路及びそのバイアス回路
US6452454B1 (en) * 2000-11-13 2002-09-17 Conexant Systems, Inc. Temperature compensation module
US6437647B1 (en) * 2001-01-30 2002-08-20 Conexant Systems, Inc. Current mirror compensation system for power amplifiers
US6556082B1 (en) * 2001-10-12 2003-04-29 Eic Corporation Temperature compensated current mirror

Also Published As

Publication number Publication date
KR20060028817A (ko) 2006-04-03
US20050030105A1 (en) 2005-02-10
KR100661704B1 (ko) 2006-12-26
CN1830137A (zh) 2006-09-06
US6946911B2 (en) 2005-09-20
DE602004031948D1 (de) 2011-05-05
JP2007502051A (ja) 2007-02-01
EP1652295B1 (de) 2011-03-23
EP1652295A2 (de) 2006-05-03
CN100481716C (zh) 2009-04-22
WO2005017956A3 (en) 2005-06-16
EP1652295A4 (de) 2009-04-01
WO2005017956B1 (en) 2005-08-11
WO2005017956A2 (en) 2005-02-24

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